TWI381529B - 顯示裝置及其製造方法 - Google Patents

顯示裝置及其製造方法 Download PDF

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Publication number
TWI381529B
TWI381529B TW097118918A TW97118918A TWI381529B TW I381529 B TWI381529 B TW I381529B TW 097118918 A TW097118918 A TW 097118918A TW 97118918 A TW97118918 A TW 97118918A TW I381529 B TWI381529 B TW I381529B
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TW
Taiwan
Prior art keywords
layer
active layer
film
insulating
electrode
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TW097118918A
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English (en)
Chinese (zh)
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TW200915575A (en
Inventor
境武志
宮澤敏夫
海東拓生
三宅秀和
Original Assignee
日立顯示器股份有限公司
松下液晶顯示器股份有限公司
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Publication of TW200915575A publication Critical patent/TW200915575A/zh
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Publication of TWI381529B publication Critical patent/TWI381529B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
TW097118918A 2007-06-05 2008-05-22 顯示裝置及其製造方法 TWI381529B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007149249A JP5303119B2 (ja) 2007-06-05 2007-06-05 半導体装置

Publications (2)

Publication Number Publication Date
TW200915575A TW200915575A (en) 2009-04-01
TWI381529B true TWI381529B (zh) 2013-01-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW097118918A TWI381529B (zh) 2007-06-05 2008-05-22 顯示裝置及其製造方法

Country Status (6)

Country Link
US (1) US8049255B2 (enExample)
EP (1) EP2001046A3 (enExample)
JP (1) JP5303119B2 (enExample)
KR (1) KR100973361B1 (enExample)
CN (1) CN101320181B (enExample)
TW (1) TWI381529B (enExample)

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JP5363009B2 (ja) * 2008-02-29 2013-12-11 株式会社ジャパンディスプレイ 表示装置およびその製造方法
KR101751560B1 (ko) 2009-11-13 2017-06-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101895080B1 (ko) 2009-11-28 2018-10-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
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KR20110090408A (ko) * 2010-02-03 2011-08-10 삼성전자주식회사 박막 형성 방법, 표시판용 금속 배선 및 이를 포함하는 박막 트랜지스터 표시판 및 그 제조 방법
TWI500161B (zh) * 2011-06-02 2015-09-11 友達光電股份有限公司 混合式薄膜電晶體及其製造方法以及顯示面板
CN102709327B (zh) * 2012-05-16 2015-06-10 京东方科技集团股份有限公司 氧化物薄膜晶体管及其制作方法、阵列基板和显示装置
JP5991668B2 (ja) * 2012-08-23 2016-09-14 株式会社ジャパンディスプレイ 表示装置及びその製造方法
KR102038633B1 (ko) 2012-11-13 2019-10-30 삼성전자주식회사 디스플레이 장치의 구동 소자 및 그 제조 방법
JP6227396B2 (ja) * 2013-12-20 2017-11-08 株式会社ジャパンディスプレイ 薄膜トランジスタ及びそれを用いた表示装置
CN103715096A (zh) * 2013-12-27 2014-04-09 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板及其制作方法
JP6218923B2 (ja) * 2014-03-11 2017-10-25 シャープ株式会社 半導体装置およびその製造方法
US10386684B2 (en) * 2014-12-26 2019-08-20 Sharp Kabushiki Kaisha Semiconductor device, display apparatus, and method of manufacturing semiconductor device
JP6334057B2 (ja) * 2015-03-27 2018-05-30 堺ディスプレイプロダクト株式会社 薄膜トランジスタ及び表示パネル
CN105633076A (zh) * 2016-01-04 2016-06-01 京东方科技集团股份有限公司 一种显示基板及其制作方法和显示装置
CN105932066A (zh) 2016-06-07 2016-09-07 深圳市华星光电技术有限公司 金属氧化物薄膜晶体管及其制备方法
CN105895706A (zh) 2016-07-01 2016-08-24 深圳市华星光电技术有限公司 薄膜晶体管及显示装置
CN107364248B (zh) * 2017-06-29 2019-04-09 华南理工大学 一种喷墨打印薄膜与基板界面观测与调控的方法
CN107564966B (zh) * 2017-08-07 2020-05-05 武汉华星光电半导体显示技术有限公司 薄膜晶体管及薄膜晶体管的制造方法、液晶显示面板
CN107369718A (zh) 2017-08-07 2017-11-21 武汉华星光电半导体显示技术有限公司 薄膜晶体管及其制造方法、液晶显示面板
CN108039352B (zh) * 2017-12-18 2020-06-05 武汉华星光电半导体显示技术有限公司 阵列基板及其制造方法
CN110581177A (zh) * 2019-08-13 2019-12-17 武汉华星光电半导体显示技术有限公司 阵列基板及其制备方法

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Also Published As

Publication number Publication date
US8049255B2 (en) 2011-11-01
CN101320181A (zh) 2008-12-10
EP2001046A2 (en) 2008-12-10
TW200915575A (en) 2009-04-01
JP2008305843A (ja) 2008-12-18
EP2001046A3 (en) 2011-01-05
CN101320181B (zh) 2012-10-31
KR20080107281A (ko) 2008-12-10
KR100973361B1 (ko) 2010-07-30
JP5303119B2 (ja) 2013-10-02
US20080303030A1 (en) 2008-12-11

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