TWI370500B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
TWI370500B
TWI370500B TW097107998A TW97107998A TWI370500B TW I370500 B TWI370500 B TW I370500B TW 097107998 A TW097107998 A TW 097107998A TW 97107998 A TW97107998 A TW 97107998A TW I370500 B TWI370500 B TW I370500B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
TW097107998A
Other languages
English (en)
Other versions
TW200845252A (en
Inventor
Shigehiro Morikawa
Yuichi Inaba
Yuji Goto
Original Assignee
Sanyo Electric Co
Sanyo Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co, Sanyo Semiconductor Co Ltd filed Critical Sanyo Electric Co
Publication of TW200845252A publication Critical patent/TW200845252A/zh
Application granted granted Critical
Publication of TWI370500B publication Critical patent/TWI370500B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
    • H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
    • H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
    • H01L2224/02165—Reinforcing structures
    • H01L2224/02166—Collar structures
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    • H01L2224/05089—Disposition of the additional element
    • H01L2224/05093—Disposition of the additional element of a plurality of vias
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    • H01L2224/05095—Disposition of the additional element of a plurality of vias at the periphery of the internal layers
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/01004—Beryllium [Be]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
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    • H01L2924/19043—Component type being a resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW097107998A 2007-04-02 2008-03-07 Semiconductor device TWI370500B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007096327A JP2008258258A (ja) 2007-04-02 2007-04-02 半導体装置

Publications (2)

Publication Number Publication Date
TW200845252A TW200845252A (en) 2008-11-16
TWI370500B true TWI370500B (en) 2012-08-11

Family

ID=39792847

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097107998A TWI370500B (en) 2007-04-02 2008-03-07 Semiconductor device

Country Status (6)

Country Link
US (1) US7741724B2 (zh)
JP (1) JP2008258258A (zh)
KR (1) KR20080090304A (zh)
CN (1) CN101281893B (zh)
RU (1) RU2447540C2 (zh)
TW (1) TWI370500B (zh)

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US8587126B2 (en) 2010-12-02 2013-11-19 Tessera, Inc. Stacked microelectronic assembly with TSVs formed in stages with plural active chips
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JP5922331B2 (ja) * 2011-02-02 2016-05-24 ラピスセミコンダクタ株式会社 半導体装置の配線構造及びその製造方法
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI793971B (zh) * 2021-08-18 2023-02-21 旺宏電子股份有限公司 半導體裝置及接合襯墊配置
US11887949B2 (en) 2021-08-18 2024-01-30 Macronix International Co., Ltd. Bond pad layout including floating conductive sections

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JP2008258258A (ja) 2008-10-23
KR20080090304A (ko) 2008-10-08
US20080237877A1 (en) 2008-10-02
RU2447540C2 (ru) 2012-04-10
CN101281893B (zh) 2010-06-16
RU2008112657A (ru) 2009-10-10
TW200845252A (en) 2008-11-16
CN101281893A (zh) 2008-10-08
US7741724B2 (en) 2010-06-22

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