TWI368660B - - Google Patents
Info
- Publication number
- TWI368660B TWI368660B TW096136710A TW96136710A TWI368660B TW I368660 B TWI368660 B TW I368660B TW 096136710 A TW096136710 A TW 096136710A TW 96136710 A TW96136710 A TW 96136710A TW I368660 B TWI368660 B TW I368660B
- Authority
- TW
- Taiwan
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/05—Alloys based on copper with manganese as the next major constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53233—Copper alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006271449 | 2006-10-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200821401A TW200821401A (en) | 2008-05-16 |
TWI368660B true TWI368660B (zh) | 2012-07-21 |
Family
ID=39268397
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096136710A TW200821401A (en) | 2006-10-03 | 2007-10-01 | Cu-Mn alloy sputtering target and semiconductor wiring |
Country Status (7)
Country | Link |
---|---|
US (1) | US20100013096A1 (zh) |
EP (1) | EP2014787B1 (zh) |
JP (2) | JP4955008B2 (zh) |
KR (1) | KR101070185B1 (zh) |
CN (1) | CN101473059B (zh) |
TW (1) | TW200821401A (zh) |
WO (1) | WO2008041535A1 (zh) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4223511B2 (ja) * | 2003-03-17 | 2009-02-12 | 日鉱金属株式会社 | 銅合金スパッタリングターゲット及びその製造方法並びに半導体素子配線 |
USD942005S1 (en) | 2007-03-14 | 2022-01-25 | Bayer Healthcare Llc | Orange syringe plunger cover |
USD847985S1 (en) | 2007-03-14 | 2019-05-07 | Bayer Healthcare Llc | Syringe plunger cover |
JP5263665B2 (ja) * | 2007-09-25 | 2013-08-14 | 日立金属株式会社 | 配線膜用Cu合金膜および配線膜形成用スパッタリングターゲット材 |
JP5420328B2 (ja) | 2008-08-01 | 2014-02-19 | 三菱マテリアル株式会社 | フラットパネルディスプレイ用配線膜形成用スパッタリングターゲット |
US20110123389A1 (en) | 2008-09-30 | 2011-05-26 | Jx Nippon Mining & Metals Corporation | High Purity Copper and Method of Producing High Purity Copper Based on Electrolysis |
WO2010038642A1 (ja) * | 2008-09-30 | 2010-04-08 | 日鉱金属株式会社 | 高純度銅又は高純度銅合金スパッタリングターゲット、同スパッタリングターゲットの製造方法及び高純度銅又は高純度銅合金スパッタ膜 |
JP2010248619A (ja) * | 2009-03-26 | 2010-11-04 | Hitachi Metals Ltd | 酸素含有Cu合金膜の製造方法 |
US20110281136A1 (en) * | 2010-05-14 | 2011-11-17 | Jenq-Gong Duh | Copper-manganese bonding structure for electronic packages |
JP5723171B2 (ja) * | 2011-02-04 | 2015-05-27 | 株式会社神戸製鋼所 | Al基合金スパッタリングターゲット |
KR101934977B1 (ko) | 2011-08-02 | 2019-03-19 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR101323151B1 (ko) * | 2011-09-09 | 2013-10-30 | 가부시키가이샤 에스에이치 카퍼프로덕츠 | 구리-망간합금 스퍼터링 타겟재, 그것을 사용한 박막 트랜지스터 배선 및 박막 트랜지스터 |
KR20160030588A (ko) | 2011-09-14 | 2016-03-18 | 제이엑스 킨조쿠 가부시키가이샤 | 고순도 구리망간 합금 스퍼터링 타깃 |
KR20130121199A (ko) * | 2011-09-14 | 2013-11-05 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | 고순도 구리망간 합금 스퍼터링 타깃 |
US8492897B2 (en) | 2011-09-14 | 2013-07-23 | International Business Machines Corporation | Microstructure modification in copper interconnect structures |
EP2733235B1 (en) * | 2011-09-30 | 2017-05-03 | JX Nippon Mining & Metals Corporation | Sputtering target and manufacturing method therefor |
TWI633624B (zh) * | 2011-12-01 | 2018-08-21 | 應用材料股份有限公司 | 用於銅阻障層應用之摻雜的氮化鉭 |
SG2014013916A (en) * | 2012-01-23 | 2014-07-30 | Jx Nippon Mining & Metals Corp | High-purity copper-manganese alloy sputtering target |
JP5952653B2 (ja) * | 2012-06-26 | 2016-07-13 | 株式会社コベルコ科研 | ターゲット接合体 |
JP2014043643A (ja) * | 2012-08-03 | 2014-03-13 | Kobelco Kaken:Kk | Cu合金薄膜形成用スパッタリングターゲットおよびその製造方法 |
CN103849795A (zh) * | 2012-11-29 | 2014-06-11 | 日月光半导体制造股份有限公司 | 用于半导体装置的铜合金导线 |
JP5724998B2 (ja) * | 2012-12-10 | 2015-05-27 | 三菱マテリアル株式会社 | 保護膜形成用スパッタリングターゲットおよび積層配線膜 |
JP6091911B2 (ja) * | 2013-01-29 | 2017-03-08 | 株式会社Shカッパープロダクツ | Cu−Mn合金スパッタリングターゲット材、Cu−Mn合金スパッタリングターゲット材の製造方法、および半導体素子 |
JP5893797B2 (ja) * | 2013-03-07 | 2016-03-23 | Jx金属株式会社 | 銅合金スパッタリングターゲット |
WO2015099119A1 (ja) * | 2013-12-27 | 2015-07-02 | Jx日鉱日石金属株式会社 | 高純度銅又は銅合金スパッタリングターゲット及びその製造方法 |
AU2015231396B2 (en) | 2014-03-19 | 2018-12-06 | Bayer Healthcare Llc | System for syringe engagement to an injector |
JP5783293B1 (ja) * | 2014-04-22 | 2015-09-24 | 三菱マテリアル株式会社 | 円筒型スパッタリングターゲット用素材 |
US9297775B2 (en) | 2014-05-23 | 2016-03-29 | Intermolecular, Inc. | Combinatorial screening of metallic diffusion barriers |
JP5972317B2 (ja) * | 2014-07-15 | 2016-08-17 | 株式会社マテリアル・コンセプト | 電子部品およびその製造方法 |
JP6435981B2 (ja) * | 2015-04-28 | 2018-12-12 | 三菱マテリアル株式会社 | 銅合金スパッタリングターゲット |
JP6720087B2 (ja) | 2015-05-21 | 2020-07-08 | Jx金属株式会社 | 銅合金スパッタリングターゲット及びその製造方法 |
CN106480348B (zh) * | 2015-08-24 | 2018-03-20 | 湖南稀土院有限责任公司 | 一种灰控制棒用吸收体材料及其制备方法 |
WO2017040152A1 (en) | 2015-08-28 | 2017-03-09 | Bayer Healthcare Llc | System and method for syringe fluid fill verification and image recognition of power injector system features |
CN106435261B (zh) * | 2016-11-28 | 2018-01-12 | 河北宏靶科技有限公司 | 一种有超细晶组织的长寿命铜锰基合金靶材及其加工方法 |
US10760156B2 (en) * | 2017-10-13 | 2020-09-01 | Honeywell International Inc. | Copper manganese sputtering target |
US11035036B2 (en) * | 2018-02-01 | 2021-06-15 | Honeywell International Inc. | Method of forming copper alloy sputtering targets with refined shape and microstructure |
US11426818B2 (en) | 2018-08-10 | 2022-08-30 | The Research Foundation for the State University | Additive manufacturing processes and additively manufactured products |
CN110106458B (zh) * | 2019-04-30 | 2020-06-19 | 中国科学院合肥物质科学研究院 | 一种锻造态锰铜减振合金的热处理方法 |
US11725270B2 (en) * | 2020-01-30 | 2023-08-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | PVD target design and semiconductor devices formed using the same |
US11270911B2 (en) | 2020-05-06 | 2022-03-08 | Applied Materials Inc. | Doping of metal barrier layers |
KR102386696B1 (ko) * | 2020-11-17 | 2022-04-15 | 주식회사 케이에스엠테크놀로지 | 액상 금속 도가니를 이용한 고융점 금속 산화물의 환원 시스템 및 방법 |
JP2023550382A (ja) * | 2020-11-17 | 2023-12-01 | ケーエスエム テクノロジー カンパニー リミテッド | フッ化物系電解質を用いた高融点金属酸化物の還元方法およびシステム |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0250432A (ja) | 1988-08-12 | 1990-02-20 | Toshiba Corp | 半導体装置 |
JPH02119140A (ja) | 1988-10-28 | 1990-05-07 | Seiko Epson Corp | 集積回路装置 |
JP2862727B2 (ja) | 1992-05-12 | 1999-03-03 | 同和鉱業株式会社 | 金属薄膜形成用スパッタリング・ターゲット並びにその製造方法 |
JPH06140398A (ja) | 1992-10-27 | 1994-05-20 | Kawasaki Steel Corp | 集積回路装置 |
JPH10195609A (ja) | 1996-12-27 | 1998-07-28 | Dowa Mining Co Ltd | 結晶方位の制御されたfcc金属及びその製造方法 |
JPH10195611A (ja) * | 1996-12-27 | 1998-07-28 | Dowa Mining Co Ltd | 結晶方位の制御されたfcc金属及びその製造方法 |
JPH10195610A (ja) | 1996-12-27 | 1998-07-28 | Dowa Mining Co Ltd | 結晶方位の制御されたfcc金属及びその製造方法 |
JP3403918B2 (ja) | 1997-06-02 | 2003-05-06 | 株式会社ジャパンエナジー | 高純度銅スパッタリングタ−ゲットおよび薄膜 |
JPH11186273A (ja) | 1997-12-19 | 1999-07-09 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
JP2000034562A (ja) | 1998-07-14 | 2000-02-02 | Japan Energy Corp | スパッタリングターゲット及び薄膜形成装置部品 |
JP2000239836A (ja) | 1999-02-23 | 2000-09-05 | Japan Energy Corp | 高純度銅または銅合金スパッタリングターゲットおよびその製造方法 |
US6478902B2 (en) * | 1999-07-08 | 2002-11-12 | Praxair S.T. Technology, Inc. | Fabrication and bonding of copper sputter targets |
JP2001049426A (ja) * | 1999-07-08 | 2001-02-20 | Praxair St Technol Inc | 銅スパッタ・ターゲットの製造方法および銅スパッタ・ターゲットと裏当て板の組立体 |
JP3997375B2 (ja) | 1999-07-30 | 2007-10-24 | 日立電線株式会社 | スパッタ用銅ターゲット材およびその製造方法 |
JP3971171B2 (ja) | 2000-12-05 | 2007-09-05 | プラクスエアー エス ティー テクノロジー インコーポレーテッド | 銅スパッターターゲットの加工方法 |
US6607982B1 (en) * | 2001-03-23 | 2003-08-19 | Novellus Systems, Inc. | High magnesium content copper magnesium alloys as diffusion barriers |
JP2002294437A (ja) | 2001-04-02 | 2002-10-09 | Mitsubishi Materials Corp | 銅合金スパッタリングターゲット |
JP3973857B2 (ja) * | 2001-04-16 | 2007-09-12 | 日鉱金属株式会社 | マンガン合金スパッタリングターゲットの製造方法 |
WO2003064722A1 (fr) | 2002-01-30 | 2003-08-07 | Nikko Materials Company, Limited | Cible de pulverisation d'alliage de cuivre et procede de fabrication de cette cible |
US6896748B2 (en) | 2002-07-18 | 2005-05-24 | Praxair S.T. Technology, Inc. | Ultrafine-grain-copper-base sputter targets |
JP4794802B2 (ja) * | 2002-11-21 | 2011-10-19 | Jx日鉱日石金属株式会社 | 銅合金スパッタリングターゲット及び半導体素子配線 |
US20040186810A1 (en) * | 2003-02-14 | 2004-09-23 | Michaluk Christopher A. | Method of supplying sputtering targets to fabricators and other users |
JP4223511B2 (ja) * | 2003-03-17 | 2009-02-12 | 日鉱金属株式会社 | 銅合金スパッタリングターゲット及びその製造方法並びに半導体素子配線 |
US20040256226A1 (en) * | 2003-06-20 | 2004-12-23 | Wickersham Charles E. | Method and design for sputter target attachment to a backing plate |
CN1839213A (zh) * | 2003-08-21 | 2006-09-27 | 霍尼韦尔国际公司 | 在三元混合物中包含铜的pvd靶和形成含铜pvd靶的方法 |
WO2005045090A1 (ja) * | 2003-11-06 | 2005-05-19 | Nikko Materials Co., Ltd. | タンタルスパッタリングターゲット |
JP4470036B2 (ja) * | 2003-11-21 | 2010-06-02 | 東ソー株式会社 | スパッタリングターゲット及びその製造方法並びにそれを用いて作製した薄膜 |
US9472383B2 (en) * | 2003-12-25 | 2016-10-18 | Jx Nippon Mining & Metals Corporation | Copper or copper alloy target/copper alloy backing plate assembly |
JP4391248B2 (ja) * | 2004-01-19 | 2009-12-24 | 日鉱金属株式会社 | 高純度形状記憶合金ターゲット及び同合金薄膜 |
WO2005073434A1 (ja) * | 2004-01-29 | 2005-08-11 | Nippon Mining & Metals Co., Ltd. | 超高純度銅及びその製造方法 |
JP4478038B2 (ja) * | 2004-02-27 | 2010-06-09 | 株式会社半導体理工学研究センター | 半導体装置及びその製造方法 |
WO2006016473A1 (ja) * | 2004-08-10 | 2006-02-16 | Nippon Mining & Metals Co., Ltd. | フレキシブル銅基板用バリア膜及びバリア膜形成用スパッタリングターゲット |
JP4065959B2 (ja) * | 2004-08-31 | 2008-03-26 | 国立大学法人東北大学 | 液晶表示装置、スパッタリングターゲット材および銅合金 |
JP5068925B2 (ja) * | 2004-09-03 | 2012-11-07 | Jx日鉱日石金属株式会社 | スパッタリングターゲット |
JP4559801B2 (ja) | 2004-09-06 | 2010-10-13 | 東京エレクトロン株式会社 | ウエハチャック |
JP4650811B2 (ja) * | 2005-03-28 | 2011-03-16 | Jx日鉱日石金属株式会社 | 深鍋状銅製スパッタリングターゲット |
JP4756458B2 (ja) * | 2005-08-19 | 2011-08-24 | 三菱マテリアル株式会社 | パーティクル発生の少ないMn含有銅合金スパッタリングターゲット |
US8188599B2 (en) * | 2006-02-28 | 2012-05-29 | Advanced Interconnect Materials, Llc | Semiconductor device, its manufacturing method, and sputtering target material for use in the method |
-
2007
- 2007-09-25 JP JP2008537466A patent/JP4955008B2/ja active Active
- 2007-09-25 KR KR1020087029476A patent/KR101070185B1/ko active IP Right Grant
- 2007-09-25 WO PCT/JP2007/068501 patent/WO2008041535A1/ja active Application Filing
- 2007-09-25 CN CN2007800225817A patent/CN101473059B/zh active Active
- 2007-09-25 EP EP07828318.1A patent/EP2014787B1/en active Active
- 2007-09-25 US US12/300,173 patent/US20100013096A1/en not_active Abandoned
- 2007-10-01 TW TW096136710A patent/TW200821401A/zh unknown
-
2012
- 2012-01-11 JP JP2012003251A patent/JP5420685B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
WO2008041535A1 (en) | 2008-04-10 |
JP2012149346A (ja) | 2012-08-09 |
JP5420685B2 (ja) | 2014-02-19 |
JPWO2008041535A1 (ja) | 2010-02-04 |
CN101473059A (zh) | 2009-07-01 |
EP2014787A4 (en) | 2009-05-06 |
KR101070185B1 (ko) | 2011-10-05 |
KR20090031508A (ko) | 2009-03-26 |
EP2014787A1 (en) | 2009-01-14 |
EP2014787B1 (en) | 2017-09-06 |
CN101473059B (zh) | 2013-03-20 |
US20100013096A1 (en) | 2010-01-21 |
TW200821401A (en) | 2008-05-16 |
JP4955008B2 (ja) | 2012-06-20 |
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