TWI349361B - A semiconductor device having a capacitor with a stepped cylindrical structure and method of manufacturing the same - Google Patents
A semiconductor device having a capacitor with a stepped cylindrical structure and method of manufacturing the sameInfo
- Publication number
- TWI349361B TWI349361B TW093135943A TW93135943A TWI349361B TW I349361 B TWI349361 B TW I349361B TW 093135943 A TW093135943 A TW 093135943A TW 93135943 A TW93135943 A TW 93135943A TW I349361 B TWI349361 B TW I349361B
- Authority
- TW
- Taiwan
- Prior art keywords
- capacitor
- manufacturing
- semiconductor device
- same
- cylindrical structure
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
- H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020030084844A KR100553839B1 (ko) | 2003-11-27 | 2003-11-27 | 캐패시터와 그 제조 방법, 이를 포함하는 반도체 장치 및그 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200524140A TW200524140A (en) | 2005-07-16 |
| TWI349361B true TWI349361B (en) | 2011-09-21 |
Family
ID=34617295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093135943A TWI349361B (en) | 2003-11-27 | 2004-11-23 | A semiconductor device having a capacitor with a stepped cylindrical structure and method of manufacturing the same |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US7227215B2 (zh) |
| JP (1) | JP4879476B2 (zh) |
| KR (1) | KR100553839B1 (zh) |
| CN (1) | CN1638131B (zh) |
| DE (1) | DE102004056350B4 (zh) |
| IT (1) | ITMI20042280A1 (zh) |
| TW (1) | TWI349361B (zh) |
Families Citing this family (41)
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|---|---|---|---|---|
| KR100541682B1 (ko) * | 2004-03-10 | 2006-01-10 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 형성방법 |
| JP4308691B2 (ja) * | 2004-03-19 | 2009-08-05 | 富士通マイクロエレクトロニクス株式会社 | 半導体基板および半導体基板の製造方法 |
| JP2006228893A (ja) * | 2005-02-16 | 2006-08-31 | Renesas Technology Corp | 半導体装置及びその製造方法 |
| JP5382988B2 (ja) * | 2005-09-28 | 2014-01-08 | 三星電子株式会社 | 金属配線構造を形成する方法 |
| KR100698073B1 (ko) * | 2005-10-27 | 2007-03-23 | 동부일렉트로닉스 주식회사 | 반도체 소자의 패턴이동 측정방법 |
| KR100673015B1 (ko) * | 2005-11-14 | 2007-01-24 | 삼성전자주식회사 | 캐패시터를 갖는 반도체 소자 및 그 형성 방법 |
| JP2007180493A (ja) | 2005-11-30 | 2007-07-12 | Elpida Memory Inc | 半導体装置の製造方法 |
| EP2018660B1 (en) * | 2006-05-02 | 2020-03-25 | Murata Integrated Passive Solutions | Electric device comprising an electrode with enhanced stability |
| JP5260861B2 (ja) * | 2006-11-29 | 2013-08-14 | 東京エレクトロン株式会社 | キャパシタ電極の製造方法と製造システムおよび記録媒体 |
| JP5105866B2 (ja) * | 2006-12-28 | 2012-12-26 | 東京エレクトロン株式会社 | キャパシタ電極の製造方法、エッチング方法およびエッチングシステム、ならびに記憶媒体 |
| KR100849066B1 (ko) * | 2007-02-06 | 2008-07-30 | 주식회사 하이닉스반도체 | 실린더형 엠아이엠 캐패시터 형성방법 |
| KR100955932B1 (ko) * | 2007-05-16 | 2010-05-03 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 형성방법 |
| KR20100101750A (ko) * | 2009-03-10 | 2010-09-20 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
| KR101609251B1 (ko) * | 2009-08-13 | 2016-04-05 | 삼성전자주식회사 | 반도체 미세 구조물의 제조 방법 |
| JP2011108927A (ja) * | 2009-11-19 | 2011-06-02 | Elpida Memory Inc | 半導体装置の製造方法 |
| CN102097359B (zh) * | 2009-12-10 | 2013-03-27 | 中芯国际集成电路制造(上海)有限公司 | 接触孔的刻蚀方法 |
| KR101145334B1 (ko) * | 2010-05-31 | 2012-05-14 | 에스케이하이닉스 주식회사 | 반도체 장치 제조방법 |
| KR20110135136A (ko) * | 2010-06-10 | 2011-12-16 | 주식회사 하이닉스반도체 | 반도체 장치의 극미세 패턴 형성을 위한 방법 |
| KR20110136473A (ko) * | 2010-06-15 | 2011-12-21 | 삼성전자주식회사 | 반도체 장치 및 반도체 장치의 제조 방법 |
| KR101128902B1 (ko) * | 2010-07-07 | 2012-03-27 | 주식회사 하이닉스반도체 | 반도체 장치 및 그 제조 방법 |
| KR20120028509A (ko) * | 2010-09-15 | 2012-03-23 | 삼성전자주식회사 | 커패시터 형성 방법 및 이를 이용한 반도체 장치 제조 방법 |
| US20130310767A1 (en) | 2010-11-16 | 2013-11-21 | C2C Developement, LLC | Seal tip catheter devices or methods |
| KR101873331B1 (ko) * | 2012-03-02 | 2018-07-02 | 삼성전자주식회사 | 반도체 기억 소자 및 반도체 기억 소자의 형성 방법 |
| KR101917816B1 (ko) * | 2012-05-08 | 2019-01-29 | 에스케이하이닉스 주식회사 | 캐패시터 및 그 제조 방법 |
| US8785997B2 (en) | 2012-05-16 | 2014-07-22 | Infineon Technologies Ag | Semiconductor device including a silicate glass structure and method of manufacturing a semiconductor device |
| KR101934093B1 (ko) | 2012-08-29 | 2019-01-02 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| US20150348963A1 (en) * | 2014-05-30 | 2015-12-03 | Inotera Memories, Inc. | Cylinder-shaped storage node with single-layer supporting structure |
| KR102499035B1 (ko) * | 2016-07-25 | 2023-02-13 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
| CN106856163A (zh) * | 2016-11-22 | 2017-06-16 | 上海华力微电子有限公司 | 一种高深宽比图形结构的形成方法 |
| CN107634047A (zh) * | 2017-09-14 | 2018-01-26 | 睿力集成电路有限公司 | 电容器阵列结构及其制造方法 |
| JP7195113B2 (ja) * | 2018-11-07 | 2022-12-23 | 東京エレクトロン株式会社 | 処理方法及び基板処理装置 |
| US11011523B2 (en) * | 2019-01-28 | 2021-05-18 | Micron Technology, Inc. | Column formation using sacrificial material |
| EP3770953B1 (en) * | 2019-07-23 | 2023-04-12 | Imec VZW | Method for forming a multi-level interconnect structure in a semiconductor device |
| CN112820828B (zh) * | 2019-11-15 | 2023-08-04 | 夏泰鑫半导体(青岛)有限公司 | 半导体装置及其制造方法 |
| CN112908967B (zh) * | 2019-11-19 | 2022-05-17 | 长鑫存储技术有限公司 | 半导体存储器、电容器阵列结构及其制造方法 |
| KR20210085699A (ko) * | 2019-12-31 | 2021-07-08 | 삼성전자주식회사 | 단차부를 가진 스토리지 노드 전극을 포함하는 반도체 소자 및 이의 제조 방법 |
| CN113823630B (zh) | 2020-06-19 | 2024-02-13 | 长鑫存储技术有限公司 | 半导体器件、电容装置及电容装置的制造方法 |
| CN114864280A (zh) * | 2021-02-04 | 2022-08-05 | 中国科学院微电子研究所 | 电容器电极、电容器及其制备方法 |
| CN113463273B (zh) * | 2021-07-30 | 2022-11-22 | 广东巨圣新材料科技有限公司 | 一种聚乳酸可降解型熔喷非织造材料的制备方法 |
| CN113582185B (zh) * | 2021-08-09 | 2022-08-23 | 长沙新立硅材料科技有限公司 | 一种利用硅泥废料制备太阳能级硅原材料的方法 |
| CN113964088B (zh) * | 2021-09-29 | 2024-05-17 | 长鑫存储技术有限公司 | 半导体结构的形成方法及半导体结构 |
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| US5610741A (en) | 1994-06-24 | 1997-03-11 | Sharp Kabushiki Kaisha | Reflection type liquid crystal display device with bumps on the reflector |
| JPH09121033A (ja) * | 1995-10-24 | 1997-05-06 | Sony Corp | キャパシタの製造方法 |
| JPH10173148A (ja) * | 1996-12-13 | 1998-06-26 | Hitachi Ltd | 半導体記憶装置 |
| JPH1126724A (ja) * | 1997-07-08 | 1999-01-29 | Sony Corp | キャパシタの形成方法 |
| JP3697044B2 (ja) * | 1997-12-19 | 2005-09-21 | 株式会社ルネサステクノロジ | 半導体集積回路装置およびその製造方法 |
| JP3230663B2 (ja) * | 1998-03-27 | 2001-11-19 | 日本電気株式会社 | 円筒型スタック電極の製造方法 |
| TW372365B (en) * | 1998-04-20 | 1999-10-21 | United Microelectronics Corp | Manufacturing method for capacitors of dynamic random access memory |
| TW428317B (en) * | 1998-08-20 | 2001-04-01 | United Microelectronics Corp | Method of manufacturing cylindrical shaped capacitor |
| US6162670A (en) * | 1998-11-20 | 2000-12-19 | United Microelectronics Corp. | Method of fabricating a data-storage capacitor for a dynamic random-access memory device |
| JP2000332217A (ja) * | 1999-05-19 | 2000-11-30 | Fujitsu Ltd | 半導体装置およびその製造方法 |
| JP2001345434A (ja) * | 2000-03-27 | 2001-12-14 | Toshiba Corp | 半導体装置 |
| KR100403611B1 (ko) * | 2000-06-07 | 2003-11-01 | 삼성전자주식회사 | 금속-절연체-금속 구조의 커패시터 및 그 제조방법 |
| KR100388682B1 (ko) * | 2001-03-03 | 2003-06-25 | 삼성전자주식회사 | 반도체 메모리 장치의 스토리지 전극층 및 그 형성방법 |
| KR100389926B1 (ko) | 2001-03-28 | 2003-07-04 | 삼성전자주식회사 | 커패시터의 스토리지 전극을 포함하는 반도체 장치 제조방법 |
| KR100449030B1 (ko) | 2002-01-24 | 2004-09-16 | 삼성전자주식회사 | 스택형 캐패시터 및 그의 제조방법 |
| US6548853B1 (en) * | 2002-02-13 | 2003-04-15 | Samsung Electronics Co., Ltd. | Cylindrical capacitors having a stepped sidewall and methods for fabricating the same |
| KR100919674B1 (ko) | 2002-12-27 | 2009-10-06 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
-
2003
- 2003-11-27 KR KR1020030084844A patent/KR100553839B1/ko not_active IP Right Cessation
-
2004
- 2004-11-22 DE DE102004056350A patent/DE102004056350B4/de not_active Expired - Fee Related
- 2004-11-23 US US10/996,969 patent/US7227215B2/en not_active Expired - Fee Related
- 2004-11-23 TW TW093135943A patent/TWI349361B/zh not_active IP Right Cessation
- 2004-11-24 JP JP2004339573A patent/JP4879476B2/ja not_active Expired - Fee Related
- 2004-11-25 IT IT002280A patent/ITMI20042280A1/it unknown
- 2004-11-29 CN CN2004100973943A patent/CN1638131B/zh not_active Expired - Fee Related
-
2006
- 2006-08-11 US US11/464,134 patent/US7575971B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TW200524140A (en) | 2005-07-16 |
| ITMI20042280A1 (it) | 2005-02-25 |
| JP4879476B2 (ja) | 2012-02-22 |
| CN1638131A (zh) | 2005-07-13 |
| US20060286745A1 (en) | 2006-12-21 |
| US20050116318A1 (en) | 2005-06-02 |
| KR20050051114A (ko) | 2005-06-01 |
| DE102004056350A1 (de) | 2005-07-07 |
| US7575971B2 (en) | 2009-08-18 |
| JP2005159363A (ja) | 2005-06-16 |
| US7227215B2 (en) | 2007-06-05 |
| CN1638131B (zh) | 2010-12-22 |
| KR100553839B1 (ko) | 2006-02-24 |
| DE102004056350B4 (de) | 2010-07-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |