TWI317180B - Optoelectronic component, device with several optoelectronic components and method to produce an optoelectronic component - Google Patents
Optoelectronic component, device with several optoelectronic components and method to produce an optoelectronic component Download PDFInfo
- Publication number
- TWI317180B TWI317180B TW095140720A TW95140720A TWI317180B TW I317180 B TWI317180 B TW I317180B TW 095140720 A TW095140720 A TW 095140720A TW 95140720 A TW95140720 A TW 95140720A TW I317180 B TWI317180 B TW I317180B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- region
- semiconductor functional
- semiconductor
- functional region
- Prior art date
Links
- 230000005693 optoelectronics Effects 0.000 title claims abstract description 107
- 238000000034 method Methods 0.000 title abstract description 109
- 239000004065 semiconductor Substances 0.000 claims abstract description 669
- 239000000463 material Substances 0.000 claims abstract description 265
- 239000004020 conductor Substances 0.000 claims abstract description 171
- 239000011810 insulating material Substances 0.000 claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 claims abstract description 26
- 239000002131 composite material Substances 0.000 claims description 117
- 230000005855 radiation Effects 0.000 claims description 115
- 125000006850 spacer group Chemical group 0.000 claims description 62
- 229910052751 metal Inorganic materials 0.000 claims description 41
- 239000002184 metal Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 38
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 23
- 239000010931 gold Substances 0.000 claims description 21
- 229910052737 gold Inorganic materials 0.000 claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- 229910052697 platinum Inorganic materials 0.000 claims description 16
- 229910052719 titanium Inorganic materials 0.000 claims description 16
- 239000010936 titanium Substances 0.000 claims description 16
- 229910045601 alloy Inorganic materials 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 239000011135 tin Substances 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 229910052718 tin Inorganic materials 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 230000004907 flux Effects 0.000 claims description 4
- 238000000407 epitaxy Methods 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 811
- 230000000087 stabilizing effect Effects 0.000 description 103
- 235000012431 wafers Nutrition 0.000 description 83
- 238000005538 encapsulation Methods 0.000 description 57
- 230000008569 process Effects 0.000 description 39
- 229910000679 solder Inorganic materials 0.000 description 36
- 230000001737 promoting effect Effects 0.000 description 27
- 238000002955 isolation Methods 0.000 description 26
- 238000003892 spreading Methods 0.000 description 24
- 230000007480 spreading Effects 0.000 description 24
- 230000003287 optical effect Effects 0.000 description 20
- 230000002829 reductive effect Effects 0.000 description 20
- 238000005530 etching Methods 0.000 description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 13
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 13
- 238000001312 dry etching Methods 0.000 description 13
- 239000011521 glass Substances 0.000 description 13
- 238000001704 evaporation Methods 0.000 description 12
- 230000006641 stabilisation Effects 0.000 description 12
- 238000011105 stabilization Methods 0.000 description 12
- 230000008020 evaporation Effects 0.000 description 11
- 238000005755 formation reaction Methods 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- 229920005989 resin Polymers 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 230000003595 spectral effect Effects 0.000 description 10
- 239000002245 particle Substances 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 9
- 238000004528 spin coating Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000005476 soldering Methods 0.000 description 8
- 239000011888 foil Substances 0.000 description 7
- 239000012774 insulation material Substances 0.000 description 7
- 238000001459 lithography Methods 0.000 description 7
- 230000036961 partial effect Effects 0.000 description 7
- 239000011241 protective layer Substances 0.000 description 7
- 239000011358 absorbing material Substances 0.000 description 6
- 238000007373 indentation Methods 0.000 description 6
- 239000004922 lacquer Substances 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 230000003667 anti-reflective effect Effects 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 230000002745 absorbent Effects 0.000 description 4
- 239000002250 absorbent Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 239000006117 anti-reflective coating Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 239000010944 silver (metal) Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 101150063042 NR0B1 gene Proteins 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- -1 alkaline earth metal sulphate Chemical class 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 210000000080 chela (arthropods) Anatomy 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 210000003298 dental enamel Anatomy 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 239000010437 gem Substances 0.000 description 2
- 229910001751 gemstone Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000012860 organic pigment Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- CFJRGWXELQQLSA-UHFFFAOYSA-N azanylidyneniobium Chemical compound [Nb]#N CFJRGWXELQQLSA-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000010902 straw Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910021653 sulphate ion Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium(II) oxide Chemical compound [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/241—Electrodes for devices having potential barriers comprising ring electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
- Photovoltaic Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102004008853 | 2004-02-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200729557A TW200729557A (en) | 2007-08-01 |
| TWI317180B true TWI317180B (en) | 2009-11-11 |
Family
ID=34832991
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095140720A TWI317180B (en) | 2004-02-20 | 2005-02-18 | Optoelectronic component, device with several optoelectronic components and method to produce an optoelectronic component |
| TW094104974A TWI347022B (en) | 2004-02-20 | 2005-02-18 | Optoelectronic component, device with several optoelectronic components and method to produce an optoelectronic component |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094104974A TWI347022B (en) | 2004-02-20 | 2005-02-18 | Optoelectronic component, device with several optoelectronic components and method to produce an optoelectronic component |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8835937B2 (enExample) |
| EP (1) | EP1716597B1 (enExample) |
| JP (2) | JP5305594B2 (enExample) |
| KR (2) | KR101228428B1 (enExample) |
| CN (2) | CN1922733A (enExample) |
| DE (1) | DE102005007601B4 (enExample) |
| TW (2) | TWI317180B (enExample) |
| WO (1) | WO2005081319A1 (enExample) |
Families Citing this family (131)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008021973A2 (en) * | 2006-08-10 | 2008-02-21 | Icemos Technology Corporation | Method of manufacturing a photodiode array with through-wafer vias |
| US7439548B2 (en) * | 2006-08-11 | 2008-10-21 | Bridgelux, Inc | Surface mountable chip |
| DE102006046038A1 (de) * | 2006-09-28 | 2008-04-03 | Osram Opto Semiconductors Gmbh | LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers |
| KR100818466B1 (ko) | 2007-02-13 | 2008-04-02 | 삼성전기주식회사 | 반도체 발광소자 |
| KR100856230B1 (ko) * | 2007-03-21 | 2008-09-03 | 삼성전기주식회사 | 발광장치, 발광장치의 제조방법 및 모놀리식 발광다이오드어레이 |
| DE102007019775B4 (de) | 2007-04-26 | 2024-11-28 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement |
| DE102007022947B4 (de) | 2007-04-26 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
| DE102007019776A1 (de) * | 2007-04-26 | 2008-10-30 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente |
| DE102007046337A1 (de) * | 2007-09-27 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip, optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
| KR100891761B1 (ko) | 2007-10-19 | 2009-04-07 | 삼성전기주식회사 | 반도체 발광소자, 그의 제조방법 및 이를 이용한 반도체발광소자 패키지 |
| DE102008013030A1 (de) * | 2007-12-14 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende Vorrichtung |
| DE102008015941A1 (de) * | 2007-12-21 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Beleuchtungseinrichtung |
| DE102008006988A1 (de) * | 2008-01-31 | 2009-08-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
| DE102008026841A1 (de) | 2008-02-22 | 2009-08-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
| DE102008010512A1 (de) | 2008-02-22 | 2009-08-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil und Verfahren zur Herstellung eines optoelektronischen Bauteils |
| KR101571577B1 (ko) | 2008-02-29 | 2015-11-24 | 오스람 옵토 세미컨덕터스 게엠베하 | 모놀리식 광전자 반도체 본체 및 그 제조 방법 |
| DE102008016525A1 (de) * | 2008-03-31 | 2009-11-26 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
| DE102008011848A1 (de) | 2008-02-29 | 2009-09-03 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
| DE102008013028A1 (de) | 2008-03-07 | 2009-09-10 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil, Gerät zur Aufzeichnung von Bildinformation und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
| DE102008016487A1 (de) | 2008-03-31 | 2009-10-01 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
| DE102008021620A1 (de) | 2008-04-30 | 2009-11-05 | Osram Opto Semiconductors Gmbh | Strahlung emittierender Dünnfilm-Halbleiterchip und Verfahren zur Herstellung eines Strahlung emittierenden Dünnfilm-Halbleiterchips |
| DE102008025491A1 (de) | 2008-05-28 | 2009-12-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Leiterplatte |
| DE102008030584A1 (de) * | 2008-06-27 | 2009-12-31 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement |
| DE102008034708A1 (de) * | 2008-07-25 | 2010-02-04 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
| DE102008038748B4 (de) | 2008-08-12 | 2022-08-04 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Oberflächenmontierbares, optoelektronisches Halbleiterbauteil |
| DE102008047579B4 (de) | 2008-09-17 | 2020-02-06 | Osram Opto Semiconductors Gmbh | Leuchtmittel |
| DE102008048650A1 (de) | 2008-09-24 | 2010-04-01 | Osram Opto Semiconductors Gmbh | Strahlung emittierende Vorrichtung |
| DE102008049535A1 (de) * | 2008-09-29 | 2010-04-08 | Osram Opto Semiconductors Gmbh | LED-Modul und Herstellungsverfahren |
| DE102008051048A1 (de) * | 2008-10-09 | 2010-04-15 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper |
| US8008683B2 (en) | 2008-10-22 | 2011-08-30 | Samsung Led Co., Ltd. | Semiconductor light emitting device |
| DE102008061152B4 (de) | 2008-12-09 | 2017-03-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
| DE102008062932A1 (de) | 2008-12-23 | 2010-06-24 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
| DE102009004724A1 (de) | 2009-01-15 | 2010-07-22 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauteils und optoelektronisches Bauteil |
| DE102009019161A1 (de) * | 2009-04-28 | 2010-11-04 | Osram Opto Semiconductors Gmbh | Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode |
| JP5284472B2 (ja) | 2009-07-22 | 2013-09-11 | パナソニック株式会社 | 発光ダイオード |
| DE102009034370A1 (de) | 2009-07-23 | 2011-01-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil und Verfahren zur Herstellung eines optischen Elements für ein optoelektronisches Bauteil |
| DE102009036621B4 (de) * | 2009-08-07 | 2023-12-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauteil |
| WO2011046388A2 (ko) * | 2009-10-15 | 2011-04-21 | 엘지이노텍주식회사 | 태양광 발전장치 및 이의 제조방법 |
| DE102009059887A1 (de) | 2009-12-21 | 2011-06-22 | OSRAM Opto Semiconductors GmbH, 93055 | Optoelektronischer Halbleiterchip |
| KR101654340B1 (ko) * | 2009-12-28 | 2016-09-06 | 서울바이오시스 주식회사 | 발광 다이오드 |
| KR101106151B1 (ko) * | 2009-12-31 | 2012-01-20 | 서울옵토디바이스주식회사 | 발광 소자 및 그것을 제조하는 방법 |
| JP5101645B2 (ja) | 2010-02-24 | 2012-12-19 | 株式会社東芝 | 半導体発光装置 |
| TWI470832B (zh) | 2010-03-08 | 2015-01-21 | Lg Innotek Co Ltd | 發光裝置 |
| JP2011199221A (ja) * | 2010-03-24 | 2011-10-06 | Hitachi Cable Ltd | 発光ダイオード |
| DE202010000518U1 (de) | 2010-03-31 | 2011-08-09 | Turck Holding Gmbh | Lampe mit einer in einem hermetisch verschlossenen Gehäuse angeordneten LED |
| DE112011101156T5 (de) * | 2010-04-01 | 2013-01-24 | Panasonic Corporation | Leuchtdiodenelement und Leuchtdiodenvorrichtung |
| JP4657374B1 (ja) * | 2010-06-16 | 2011-03-23 | 有限会社ナプラ | 発光ダイオード、発光装置、照明装置及びディスプレイ |
| DE102010024079B4 (de) | 2010-06-17 | 2025-08-28 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
| DE102010031237A1 (de) | 2010-07-12 | 2012-01-12 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
| KR101784417B1 (ko) * | 2010-07-12 | 2017-11-07 | 삼성전자주식회사 | 발광 디바이스 및 그 제조방법 |
| KR101688379B1 (ko) * | 2010-07-12 | 2016-12-22 | 삼성전자주식회사 | 발광 디바이스 및 그 제조방법 |
| DE102010038405A1 (de) | 2010-07-26 | 2012-01-26 | Osram Opto Semiconductors Gmbh | Elektronisches Bauelement und Verfahren zur Herstellung eines elektronischen Bauelements |
| DE102010032497A1 (de) | 2010-07-28 | 2012-02-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips |
| DE102010039382A1 (de) | 2010-08-17 | 2012-02-23 | Osram Opto Semiconductors Gmbh | Elektronisches Bauelement und Verfahren zur Herstellung eines elektronischen Bauelements |
| KR101114191B1 (ko) * | 2010-09-17 | 2012-03-13 | 엘지이노텍 주식회사 | 발광소자 |
| US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
| DE102010043378A1 (de) | 2010-11-04 | 2012-05-10 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
| DE102010053809A1 (de) | 2010-12-08 | 2012-06-14 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement, Verfahren zu dessen Herstellung und Verwendung eines derartigen Bauelements |
| DE102010063760B4 (de) | 2010-12-21 | 2022-12-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement |
| DE102010056056A1 (de) * | 2010-12-23 | 2012-06-28 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines elektrischen Anschlussträgers |
| KR101762173B1 (ko) | 2011-01-13 | 2017-08-04 | 삼성전자 주식회사 | 웨이퍼 레벨 발광 소자 패키지 및 그의 제조 방법 |
| DE102011003969B4 (de) | 2011-02-11 | 2023-03-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Bauelements |
| DE102011011378B4 (de) | 2011-02-16 | 2025-10-30 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterchip und Verfahren zur Herstellung von Halbleiterchips |
| WO2012123840A1 (en) * | 2011-03-14 | 2012-09-20 | Koninklijke Philips Electronics N.V. | Led having vertical contacts redistributed for flip chip mounting |
| US9246052B2 (en) | 2011-07-15 | 2016-01-26 | Institute Of Semiconductors, Chinese Academy Of Sciences | Packaging structure of light emitting diode and method of manufacturing the same |
| DE102011079403A1 (de) | 2011-07-19 | 2013-01-24 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
| KR101276053B1 (ko) * | 2011-07-22 | 2013-06-17 | 삼성전자주식회사 | 반도체 발광소자 및 발광장치 |
| DE102011080458A1 (de) | 2011-08-04 | 2013-02-07 | Osram Opto Semiconductors Gmbh | Optoelektronische anordnung und verfahren zur herstellung einer optoelektronischen anordnung |
| DE102011054891B4 (de) * | 2011-10-28 | 2017-10-19 | Osram Opto Semiconductors Gmbh | Verfahren zum Durchtrennen eines Halbleiterbauelementverbunds |
| DE102011087543A1 (de) | 2011-12-01 | 2013-06-06 | Osram Opto Semiconductors Gmbh | Optoelektronische anordnung |
| EP2600168A1 (de) * | 2011-12-01 | 2013-06-05 | Leica Geosystems AG | Entfernungsmesser |
| DE102011087614A1 (de) | 2011-12-02 | 2013-06-06 | Osram Opto Semiconductors Gmbh | Optoelektronische Anordnung |
| JP5700561B2 (ja) * | 2011-12-12 | 2015-04-15 | 日本電信電話株式会社 | 受光素子 |
| DE102012200416B4 (de) | 2012-01-12 | 2018-03-01 | Osram Opto Semiconductors Gmbh | Optoelektronisches modul und verfahren zur herstellung eines optoelektronischen moduls |
| DE102012200973A1 (de) | 2012-01-24 | 2013-07-25 | Osram Opto Semiconductors Gmbh | Leuchte und verfahren zur herstellung einer leuchte |
| US9368702B2 (en) | 2012-02-10 | 2016-06-14 | Koninklijke Philips N.V. | Molded lens forming a chip scale LED package and method of manufacturing the same |
| KR101911865B1 (ko) | 2012-03-07 | 2018-10-25 | 엘지이노텍 주식회사 | 발광소자 |
| JP2013232503A (ja) * | 2012-04-27 | 2013-11-14 | Toshiba Corp | 半導体発光装置 |
| DE102012025896B4 (de) | 2012-06-01 | 2024-10-10 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Modul |
| DE102012209325B4 (de) | 2012-06-01 | 2021-09-30 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Modul |
| DE102012105176B4 (de) * | 2012-06-14 | 2021-08-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
| TWI572068B (zh) * | 2012-12-07 | 2017-02-21 | 晶元光電股份有限公司 | 發光元件 |
| WO2014049154A2 (de) | 2012-09-27 | 2014-04-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement mit schutzschaltung |
| DE102012217652B4 (de) * | 2012-09-27 | 2021-01-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauteil |
| DE102012217932B4 (de) | 2012-10-01 | 2019-11-14 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit Schutzschaltung |
| DE102012109905B4 (de) * | 2012-10-17 | 2021-11-11 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterbauteilen |
| KR20140076204A (ko) * | 2012-12-12 | 2014-06-20 | 서울바이오시스 주식회사 | 발광다이오드 및 그 제조방법 |
| US10439107B2 (en) * | 2013-02-05 | 2019-10-08 | Cree, Inc. | Chip with integrated phosphor |
| US9318674B2 (en) | 2013-02-05 | 2016-04-19 | Cree, Inc. | Submount-free light emitting diode (LED) components and methods of fabricating same |
| DE102013103079A1 (de) * | 2013-03-26 | 2014-10-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
| US20160155901A1 (en) * | 2013-07-18 | 2016-06-02 | Koninklijke Philips N.V. | Highly reflective flip chip led die |
| EP3022779B1 (en) * | 2013-07-19 | 2020-03-18 | Lumileds Holding B.V. | Pc led with optical element and without substrate carrier |
| DE102013110041B4 (de) | 2013-09-12 | 2023-09-07 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip und optoelektronisches Bauelement |
| FR3011383B1 (fr) | 2013-09-30 | 2017-05-26 | Commissariat Energie Atomique | Procede de fabrication de dispositifs optoelectroniques a diodes electroluminescentes |
| US11398579B2 (en) | 2013-09-30 | 2022-07-26 | Commissariat à l'énergie atomique et aux énergies alternatives | Method for producing optoelectronic devices comprising light-emitting diodes |
| EP2860769A1 (en) * | 2013-10-11 | 2015-04-15 | Azzurro Semiconductors AG | Layer structure for surface-emitting thin-film p-side-up light-emitting diode |
| CN103594583A (zh) * | 2013-11-07 | 2014-02-19 | 溧阳市江大技术转移中心有限公司 | 一种倒装发光二极管 |
| DE102014101492A1 (de) | 2014-02-06 | 2015-08-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
| DE102014102183A1 (de) * | 2014-02-20 | 2015-08-20 | Osram Opto Semiconductors Gmbh | Herstellung optoelektronischer Bauelemente |
| KR102181398B1 (ko) * | 2014-06-11 | 2020-11-23 | 엘지이노텍 주식회사 | 발광소자 및 조명시스템 |
| DE102014118349B4 (de) | 2014-12-10 | 2023-07-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterbauelement und Verfahren zur Herstellung einer Mehrzahl von Halbleiterbauelementen |
| US10217914B2 (en) * | 2015-05-27 | 2019-02-26 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device |
| KR102460072B1 (ko) * | 2015-09-10 | 2022-10-31 | 삼성전자주식회사 | 반도체 발광 소자 |
| DE102015117198B4 (de) * | 2015-10-08 | 2025-10-16 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Bauelement und Verfahren zur Herstellung eines Bauelements |
| CN205944139U (zh) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
| SE539668C2 (en) * | 2016-06-01 | 2017-10-24 | Fingerprint Cards Ab | Fingerprint sensing device and method for manufacturing a fingerprint sensing device |
| DE102016111058A1 (de) | 2016-06-16 | 2017-12-21 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Laserdiodenbarrens und Laserdiodenbarren |
| DE102016111442A1 (de) | 2016-06-22 | 2017-12-28 | Osram Opto Semiconductors Gmbh | Halbleiterlichtquelle |
| FR3054725B1 (fr) * | 2016-07-26 | 2019-05-17 | Institut Polytechnique De Grenoble | Dispositif optoelectronique et son procede de fabrication |
| DE102016114204B4 (de) * | 2016-08-01 | 2018-12-20 | Ketek Gmbh | Strahlungsdetektor und Verfahren zur Herstellung einer Mehrzahl von Strahlungsdetektoren |
| DE102017107198A1 (de) * | 2017-04-04 | 2018-10-04 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Halbleiterchip und optoelektronischer Halbleiterchip |
| US10572747B2 (en) * | 2017-05-31 | 2020-02-25 | Innolux Corporation | Display apparatus |
| CN120224862A (zh) * | 2017-05-31 | 2025-06-27 | 群创光电股份有限公司 | 显示设备及其形成方法 |
| DE102017112223A1 (de) | 2017-06-02 | 2018-12-06 | Osram Opto Semiconductors Gmbh | Halbleiterlaser-Bauteil und Verfahren zur Herstellung eines Halbleiterlaser-Bauteils |
| CN109004037A (zh) * | 2017-06-07 | 2018-12-14 | 中国科学院物理研究所 | 光电子器件及其制造方法 |
| KR102499308B1 (ko) | 2017-08-11 | 2023-02-14 | 서울바이오시스 주식회사 | 발광 다이오드 |
| WO2019031745A2 (ko) * | 2017-08-11 | 2019-02-14 | 서울바이오시스주식회사 | 발광 다이오드 |
| DE102017119344A1 (de) * | 2017-08-24 | 2019-02-28 | Osram Opto Semiconductors Gmbh | Träger und Bauteil mit Pufferschicht sowie Verfahren zur Herstellung eines Bauteils |
| DE102017119778A1 (de) * | 2017-08-29 | 2019-02-28 | Osram Opto Semiconductors Gmbh | Laserbauelement, Verwendung eines Laserbauelements, Vorrichtung mit Laserbauelement und Verfahren zur Herstellung von Laserbauelementen |
| CN107946382A (zh) * | 2017-11-16 | 2018-04-20 | 南京日托光伏科技股份有限公司 | Mwt与hit结合的太阳能电池及其制备方法 |
| DE102018106685A1 (de) * | 2018-03-21 | 2019-09-26 | Osram Opto Semiconductors Gmbh | Halbleiterlaser und projektor |
| US20210343902A1 (en) * | 2018-09-27 | 2021-11-04 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component having a sapphire support and method for the production thereof |
| DE102018132824B4 (de) * | 2018-12-19 | 2024-10-10 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung einer optoelektronischen leuchtvorrichtung |
| JP6766900B2 (ja) * | 2019-01-15 | 2020-10-14 | 日亜化学工業株式会社 | 発光装置 |
| IT201900006740A1 (it) * | 2019-05-10 | 2020-11-10 | Applied Materials Inc | Procedimenti di strutturazione di substrati |
| WO2020246217A1 (ja) | 2019-06-06 | 2020-12-10 | ヌヴォトンテクノロジージャパン株式会社 | 半導体発光素子及び半導体発光装置 |
| GB2592253A (en) * | 2020-02-21 | 2021-08-25 | Rockley Photonics Ltd | Transfer die for micro-transfer printing |
| KR102530795B1 (ko) * | 2021-02-04 | 2023-05-10 | 웨이브로드 주식회사 | 엘이디 패키지를 제조하는 방법 |
| CN114171540B (zh) * | 2021-12-08 | 2024-11-22 | 镭昱光电科技(苏州)有限公司 | 微显示led芯片结构及其制作方法 |
| WO2023169673A1 (en) * | 2022-03-09 | 2023-09-14 | Ams-Osram International Gmbh | Optoelectronic package and method for manufactuiring an optoelectronic package |
| CN118472152B (zh) * | 2024-07-12 | 2024-09-17 | 诺视科技(浙江)有限公司 | 集成反射穹顶的微显示器件及其制备方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03177080A (ja) * | 1989-12-05 | 1991-08-01 | Nkk Corp | 発光ダイオードアレー |
| EP1313153A3 (en) * | 1992-07-23 | 2005-05-04 | Toyoda Gosei Co., Ltd. | Light-emitting device of gallium nitride compound semiconductor |
| JP2657743B2 (ja) * | 1992-10-29 | 1997-09-24 | 豊田合成株式会社 | 窒素−３族元素化合物半導体発光素子 |
| DE19638667C2 (de) * | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
| TW365071B (en) * | 1996-09-09 | 1999-07-21 | Toshiba Corp | Semiconductor light emitting diode and method for manufacturing the same |
| US6274890B1 (en) * | 1997-01-15 | 2001-08-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and its manufacturing method |
| US6281524B1 (en) | 1997-02-21 | 2001-08-28 | Kabushiki Kaisha Toshiba | Semiconductor light-emitting device |
| JPH10294491A (ja) * | 1997-04-22 | 1998-11-04 | Toshiba Corp | 半導体発光素子およびその製造方法ならびに発光装置 |
| US6633120B2 (en) * | 1998-11-19 | 2003-10-14 | Unisplay S.A. | LED lamps |
| AU2401001A (en) * | 1999-12-24 | 2001-07-09 | International Reagents Corporation | Means of stabilizing compositions and reagents |
| DE10017336C2 (de) | 2000-04-07 | 2002-05-16 | Vishay Semiconductor Gmbh | verfahren zur Herstellung von strahlungsemittierenden Halbleiter-Wafern |
| JP4050444B2 (ja) | 2000-05-30 | 2008-02-20 | 信越半導体株式会社 | 発光素子及びその製造方法 |
| JP3328647B2 (ja) * | 2000-08-22 | 2002-09-30 | サンユレック株式会社 | 光電子部品の製造方法 |
| US6611002B2 (en) | 2001-02-23 | 2003-08-26 | Nitronex Corporation | Gallium nitride material devices and methods including backside vias |
| CN1156030C (zh) * | 2001-02-27 | 2004-06-30 | 连威磊晶科技股份有限公司 | 具有高透光率的发光二极管元件 |
| WO2002089221A1 (en) * | 2001-04-23 | 2002-11-07 | Matsushita Electric Works, Ltd. | Light emitting device comprising led chip |
| JPWO2003044872A1 (ja) * | 2001-11-19 | 2005-03-24 | 三洋電機株式会社 | 化合物半導体発光素子 |
| US7714345B2 (en) * | 2003-04-30 | 2010-05-11 | Cree, Inc. | Light-emitting devices having coplanar electrical contacts adjacent to a substrate surface opposite an active region and methods of forming the same |
| TWI220578B (en) | 2003-09-16 | 2004-08-21 | Opto Tech Corp | Light-emitting device capable of increasing light-emitting active region |
-
2005
- 2005-02-18 TW TW095140720A patent/TWI317180B/zh not_active IP Right Cessation
- 2005-02-18 DE DE102005007601.7A patent/DE102005007601B4/de not_active Expired - Lifetime
- 2005-02-18 KR KR1020067019264A patent/KR101228428B1/ko not_active Expired - Lifetime
- 2005-02-18 WO PCT/DE2005/000281 patent/WO2005081319A1/de not_active Ceased
- 2005-02-18 JP JP2006553430A patent/JP5305594B2/ja not_active Expired - Lifetime
- 2005-02-18 EP EP05706767.0A patent/EP1716597B1/de not_active Expired - Lifetime
- 2005-02-18 CN CNA2005800053737A patent/CN1922733A/zh active Pending
- 2005-02-18 TW TW094104974A patent/TWI347022B/zh not_active IP Right Cessation
- 2005-02-18 US US10/588,167 patent/US8835937B2/en active Active
- 2005-02-18 KR KR1020127015400A patent/KR101332771B1/ko not_active Expired - Lifetime
- 2005-02-18 CN CN2009101719228A patent/CN101685823B/zh not_active Expired - Lifetime
-
2010
- 2010-12-03 JP JP2010270229A patent/JP5355536B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| TW200729557A (en) | 2007-08-01 |
| CN1922733A (zh) | 2007-02-28 |
| DE102005007601B4 (de) | 2023-03-23 |
| TWI347022B (en) | 2011-08-11 |
| CN101685823B (zh) | 2012-04-18 |
| JP2007523483A (ja) | 2007-08-16 |
| EP1716597A1 (de) | 2006-11-02 |
| KR20120085318A (ko) | 2012-07-31 |
| WO2005081319A1 (de) | 2005-09-01 |
| TW200536151A (en) | 2005-11-01 |
| US20090065800A1 (en) | 2009-03-12 |
| CN101685823A (zh) | 2010-03-31 |
| JP5305594B2 (ja) | 2013-10-02 |
| KR101332771B1 (ko) | 2013-11-25 |
| DE102005007601A1 (de) | 2005-09-08 |
| KR20070004737A (ko) | 2007-01-09 |
| EP1716597B1 (de) | 2018-04-04 |
| JP5355536B2 (ja) | 2013-11-27 |
| JP2011049600A (ja) | 2011-03-10 |
| KR101228428B1 (ko) | 2013-01-31 |
| US8835937B2 (en) | 2014-09-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI317180B (en) | Optoelectronic component, device with several optoelectronic components and method to produce an optoelectronic component | |
| TWI385823B (zh) | 光電組件及製造複數個光電組件之方法 | |
| KR101457247B1 (ko) | 광전 소자 | |
| CN102460744B (zh) | 具有反射结构的半导体发光二极管及其制造方法 | |
| TWI379439B (en) | Method of manufacturing a plurality of optoelectronic components and optoelectronic component | |
| US8026527B2 (en) | LED structure | |
| US9548433B2 (en) | Light-emitting diode chip | |
| US10270019B2 (en) | Optoelectronic semiconductor chip, optoelectronic semiconductor component and method for producing an optoelectronic semiconductor chip | |
| TW201029232A (en) | Radiation-emitting semiconductor chip | |
| US9627583B2 (en) | Light-emitting device and method for manufacturing the same | |
| TW201214792A (en) | Optoelectronic semiconductor device | |
| TW201027795A (en) | Semiconductor light emitting device including a window layer and a light-directing structure | |
| JP2012504875A (ja) | オプトエレクトロニクス半導体素子の製造方法及びオプトエレクトロニクス半導体素子 | |
| CN113169259A (zh) | 发光二极管及其制作方法 | |
| US9502612B2 (en) | Light emitting diode package with enhanced heat conduction | |
| KR102461968B1 (ko) | 발광 소자 | |
| KR20150069228A (ko) | 파장변환층을 갖는 발광 다이오드 및 그것을 제조하는 방법 | |
| EP2930749B1 (en) | Light-emitting device and method of producing the same | |
| TW200908395A (en) | Optoelectronic semiconductor chip | |
| US20150303179A1 (en) | Light Emitting Diode Assembly With Integrated Circuit Element | |
| WO2014064541A2 (en) | Light emitting diode package with enhanced heat conduction | |
| TW201238090A (en) | Housing and method of manufacturing a housing for an optoelectronic component | |
| JP2006080316A (ja) | 固体素子デバイス |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |