TWI313892B - Low 1c screw dislocation 3 inch silicon carbide wafer - Google Patents

Low 1c screw dislocation 3 inch silicon carbide wafer Download PDF

Info

Publication number
TWI313892B
TWI313892B TW094134555A TW94134555A TWI313892B TW I313892 B TWI313892 B TW I313892B TW 094134555 A TW094134555 A TW 094134555A TW 94134555 A TW94134555 A TW 94134555A TW I313892 B TWI313892 B TW I313892B
Authority
TW
Taiwan
Prior art keywords
wafer
single crystal
wafers
high quality
corundum
Prior art date
Application number
TW094134555A
Other languages
English (en)
Chinese (zh)
Other versions
TW200629390A (en
Inventor
Adrian Powell
Mark Brady
Robert T Leonard
Stephan G Mueller
Valeri F Tsvetkov
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=35925857&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI313892(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Cree Inc filed Critical Cree Inc
Publication of TW200629390A publication Critical patent/TW200629390A/zh
Application granted granted Critical
Publication of TWI313892B publication Critical patent/TWI313892B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW094134555A 2004-10-04 2005-10-03 Low 1c screw dislocation 3 inch silicon carbide wafer TWI313892B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/957,806 US7314520B2 (en) 2004-10-04 2004-10-04 Low 1c screw dislocation 3 inch silicon carbide wafer

Publications (2)

Publication Number Publication Date
TW200629390A TW200629390A (en) 2006-08-16
TWI313892B true TWI313892B (en) 2009-08-21

Family

ID=35925857

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094134555A TWI313892B (en) 2004-10-04 2005-10-03 Low 1c screw dislocation 3 inch silicon carbide wafer

Country Status (7)

Country Link
US (3) US7314520B2 (OSRAM)
EP (2) EP2584071B1 (OSRAM)
JP (3) JP2008515748A (OSRAM)
KR (1) KR20070054719A (OSRAM)
CN (1) CN101061262B (OSRAM)
TW (1) TWI313892B (OSRAM)
WO (1) WO2006041659A2 (OSRAM)

Families Citing this family (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6814801B2 (en) 2002-06-24 2004-11-09 Cree, Inc. Method for producing semi-insulating resistivity in high purity silicon carbide crystals
US7601441B2 (en) 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
US7563321B2 (en) * 2004-12-08 2009-07-21 Cree, Inc. Process for producing high quality large size silicon carbide crystals
US8980445B2 (en) * 2006-07-06 2015-03-17 Cree, Inc. One hundred millimeter SiC crystal grown on off-axis seed
WO2008033994A1 (en) 2006-09-14 2008-03-20 Cree, Inc. Micropipe-free silicon carbide and related method of manufacture
JP2010087397A (ja) * 2008-10-02 2010-04-15 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
JP2010184833A (ja) 2009-02-12 2010-08-26 Denso Corp 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ
WO2010131569A1 (ja) 2009-05-11 2010-11-18 住友電気工業株式会社 半導体基板の製造方法
JPWO2011052321A1 (ja) 2009-10-30 2013-03-14 住友電気工業株式会社 炭化珪素基板の製造方法および炭化珪素基板
CA2759852A1 (en) 2009-10-30 2011-05-05 Sumitomo Electric Industries, Ltd. Method for manufacturing silicon carbide substrate and silicon carbide substrate
JPWO2011058831A1 (ja) 2009-11-13 2013-03-28 住友電気工業株式会社 半導体基板の製造方法
KR20120084254A (ko) * 2009-11-24 2012-07-27 스미토모덴키고교가부시키가이샤 반도체 기판의 제조 방법
CN102334176A (zh) 2009-12-16 2012-01-25 住友电气工业株式会社 碳化硅衬底
JP2011146570A (ja) * 2010-01-15 2011-07-28 Sumitomo Electric Ind Ltd 炭化珪素基板
EP2532773A4 (en) 2010-02-05 2013-12-11 Sumitomo Electric Industries PROCESS FOR PRODUCING SILICON CARBIDE SUBSTRATE
KR20120042753A (ko) 2010-03-02 2012-05-03 스미토모덴키고교가부시키가이샤 탄화 규소 기판의 제조 방법
JP2011210864A (ja) * 2010-03-29 2011-10-20 Sumitomo Electric Ind Ltd 半導体基板
JP2011243619A (ja) * 2010-05-14 2011-12-01 Sumitomo Electric Ind Ltd 炭化珪素基板の製造方法、半導体装置の製造方法、炭化珪素基板および半導体装置
US8445386B2 (en) * 2010-05-27 2013-05-21 Cree, Inc. Smoothing method for semiconductor material and wafers produced by same
JP5447206B2 (ja) 2010-06-15 2014-03-19 住友電気工業株式会社 炭化珪素単結晶の製造方法および炭化珪素基板
JP2012004494A (ja) 2010-06-21 2012-01-05 Sumitomo Electric Ind Ltd 炭化珪素基板の製造方法および製造装置
US8609513B2 (en) 2010-09-16 2013-12-17 Sumitomo Electric Industries, Ltd. Method for manufacturing semiconductor device
JP2012089612A (ja) 2010-10-18 2012-05-10 Sumitomo Electric Ind Ltd 炭化珪素基板を有する複合基板
JP2012089613A (ja) 2010-10-18 2012-05-10 Sumitomo Electric Ind Ltd 炭化珪素基板を有する複合基板の製造方法
JP2012089639A (ja) 2010-10-19 2012-05-10 Sumitomo Electric Ind Ltd 単結晶炭化珪素基板を有する複合基板
KR20120101055A (ko) 2010-12-27 2012-09-12 스미토모덴키고교가부시키가이샤 탄화규소 기판, 반도체 장치, 탄화규소 기판의 제조 방법 및 반도체 장치의 제조 방법
JP6025306B2 (ja) * 2011-05-16 2016-11-16 株式会社豊田中央研究所 ＳｉＣ単結晶、ＳｉＣウェハ及び半導体デバイス
US10094041B2 (en) 2011-07-04 2018-10-09 Toyota Jidosha Kabushiki Kaisha SiC single crystal and method of producing same
EP2752508A4 (en) * 2011-08-29 2015-02-25 Nippon Steel & Sumitomo Metal Corp SILICON CARBIDE CRYSTAL WAFERS AND MANUFACTURING METHOD THEREFOR
JP5696630B2 (ja) 2011-09-21 2015-04-08 住友電気工業株式会社 炭化珪素基板およびその製造方法
JP5750363B2 (ja) * 2011-12-02 2015-07-22 株式会社豊田中央研究所 ＳｉＣ単結晶、ＳｉＣウェハ及び半導体デバイス
JP5810893B2 (ja) * 2011-12-22 2015-11-11 住友電気工業株式会社 半導体基板
JP5810894B2 (ja) * 2011-12-22 2015-11-11 住友電気工業株式会社 半導体基板
US8912550B2 (en) 2011-12-22 2014-12-16 Sumitomo Electric Industries, Ltd. Dislocations in SiC semiconductor substrate
JP5810892B2 (ja) * 2011-12-22 2015-11-11 住友電気工業株式会社 半導体基板
CN104246023B (zh) 2012-04-20 2019-02-01 贰陆股份公司 大直径高品质的SiC单晶、方法和设备
JP5668724B2 (ja) * 2012-06-05 2015-02-12 トヨタ自動車株式会社 ＳｉＣ単結晶のインゴット、ＳｉＣ単結晶、及び製造方法
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
WO2014077368A1 (ja) * 2012-11-15 2014-05-22 新日鐵住金株式会社 炭化珪素単結晶基板およびその製法
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
JP5857986B2 (ja) 2013-02-20 2016-02-10 株式会社デンソー 炭化珪素単結晶および炭化珪素単結晶の製造方法
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US9919972B2 (en) 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices
US9657409B2 (en) 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
US10322936B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
JP6183010B2 (ja) * 2013-07-03 2017-08-23 住友電気工業株式会社 炭化珪素単結晶基板およびその製造方法
US10801126B2 (en) * 2013-09-06 2020-10-13 Gtat Corporation Method for producing bulk silicon carbide
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
CN107109694B (zh) 2015-01-21 2020-10-16 住友电气工业株式会社 晶体生长装置、碳化硅单晶的制造方法、碳化硅单晶基板和碳化硅外延基板
JP6592961B2 (ja) * 2015-05-19 2019-10-23 セイコーエプソン株式会社 炭化ケイ素基板および炭化ケイ素基板の製造方法
JP6597065B2 (ja) 2015-08-31 2019-10-30 株式会社デンソー 炭化珪素単結晶、炭化珪素単結晶ウェハ、炭化珪素単結晶エピタキシャルウェハ、電子デバイス
JP5967280B2 (ja) * 2015-09-15 2016-08-10 住友電気工業株式会社 半導体基板
JP5967281B2 (ja) * 2015-09-15 2016-08-10 住友電気工業株式会社 半導体基板
JP6008030B2 (ja) * 2015-09-15 2016-10-19 住友電気工業株式会社 半導体基板
US20170275779A1 (en) * 2015-10-07 2017-09-28 Sumitomo Electric Industries, Ltd. Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
JP6132059B2 (ja) * 2016-07-01 2017-05-24 住友電気工業株式会社 半導体基板
JP6132058B2 (ja) * 2016-07-01 2017-05-24 住友電気工業株式会社 半導体基板
US10714572B2 (en) * 2016-10-04 2020-07-14 Sumitomo Electric Industries, Ltd. Silicon carbide epitaxial substrate and method for manufacturing a silicon carbide semiconductor device
JP6768491B2 (ja) * 2016-12-26 2020-10-14 昭和電工株式会社 ＳｉＣウェハ及びＳｉＣウェハの製造方法
CN115594508A (zh) 2017-03-29 2023-01-13 帕里杜斯有限公司（Us） 碳化硅空间形体及形成球状体的方法
JP7393900B2 (ja) * 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
KR102276450B1 (ko) 2019-10-29 2021-07-12 에스케이씨 주식회사 탄화규소 잉곳의 제조방법, 탄화규소 웨이퍼의 제조방법 및 이의 성장 시스템
CN110919465A (zh) * 2019-11-08 2020-03-27 中国科学院上海硅酸盐研究所 无损伤、高平面度单晶碳化硅平面光学元件及其制备方法
WO2021133626A1 (en) 2019-12-27 2021-07-01 Cree, Inc. Large diameter silicon carbide wafers
US20230407519A1 (en) * 2020-11-19 2023-12-21 Zadient Technologies SAS Improved Furnace Apparatus for Crystal Production
US12125701B2 (en) 2020-12-15 2024-10-22 Wolfspeed, Inc. Large dimension silicon carbide single crystalline materials with reduced crystallographic stress
EP4060099A1 (de) 2021-03-19 2022-09-21 SiCrystal GmbH Herstellungsverfahren für einen sic-volumeneinkristall homogener schraubenversetzungsverteilung und sic-substrat
US12024794B2 (en) 2021-06-17 2024-07-02 Wolfspeed, Inc. Reduced optical absorption for silicon carbide crystalline materials
CN113652750B (zh) * 2021-08-18 2022-07-12 山东天岳先进科技股份有限公司 具有环形形貌的碳化硅晶体及其制备方法和制得的衬底

Family Cites Families (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4387503A (en) * 1981-08-13 1983-06-14 Mostek Corporation Method for programming circuit elements in integrated circuits
JPS58142629A (ja) * 1982-02-17 1983-08-24 Toshiba Corp 対角型マトリクス回路網
US4543594A (en) * 1982-09-07 1985-09-24 Intel Corporation Fusible link employing capacitor structure
JPS59105354A (ja) * 1982-12-09 1984-06-18 Toshiba Corp 半導体装置
US4779126A (en) * 1983-11-25 1988-10-18 International Rectifier Corporation Optically triggered lateral thyristor with auxiliary region
US4894791A (en) * 1986-02-10 1990-01-16 Dallas Semiconductor Corporation Delay circuit for a monolithic integrated circuit and method for adjusting delay of same
US4799126A (en) * 1987-04-16 1989-01-17 Navistar International Transportation Corp. Overload protection for D.C. circuits
GB2206010A (en) * 1987-06-08 1988-12-21 Philips Electronic Associated Differential amplifier and current sensing circuit including such an amplifier
US4777471A (en) * 1987-06-22 1988-10-11 Precision Microdevices Inc. Apparatus for multiple link trimming in precision integrated circuits
US4860185A (en) * 1987-08-21 1989-08-22 Electronic Research Group, Inc. Integrated uninterruptible power supply for personal computers
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US5021861A (en) * 1990-05-23 1991-06-04 North Carolina State University Integrated circuit power device with automatic removal of defective devices and method of fabricating same
US5958132A (en) * 1991-04-18 1999-09-28 Nippon Steel Corporation SiC single crystal and method for growth thereof
JP2804860B2 (ja) * 1991-04-18 1998-09-30 新日本製鐵株式会社 ＳｉＣ単結晶およびその成長方法
US5539217A (en) * 1993-08-09 1996-07-23 Cree Research, Inc. Silicon carbide thyristor
US6077619A (en) * 1994-10-31 2000-06-20 Sullivan; Thomas M. Polycrystalline silicon carbide ceramic wafer and substrate
US5766343A (en) * 1995-01-17 1998-06-16 The United States Of America As Represented By The Secretary Of The Navy Lower bandgap, lower resistivity, silicon carbide heteroepitaxial material, and method of making same
US5883403A (en) * 1995-10-03 1999-03-16 Hitachi, Ltd. Power semiconductor device
US5663580A (en) * 1996-03-15 1997-09-02 Abb Research Ltd. Optically triggered semiconductor device
US5944890A (en) 1996-03-29 1999-08-31 Denso Corporation Method of producing single crystals and a seed crystal used in the method
US6562130B2 (en) 1997-01-22 2003-05-13 The Fox Group, Inc. Low defect axially grown single crystal silicon carbide
US5873937A (en) 1997-05-05 1999-02-23 Northrop Grumman Corporation Method of growing 4H silicon carbide crystal
JP3003027B2 (ja) * 1997-06-25 2000-01-24 日本ピラー工業株式会社 単結晶ＳｉＣおよびその製造方法
US5915194A (en) * 1997-07-03 1999-06-22 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon
US6165874A (en) * 1997-07-03 2000-12-26 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon
TW440989B (en) 1997-09-05 2001-06-16 Nippon Pillar Packing Semiconductor wafer holder with CVD silicon carbide film coating
JP3043675B2 (ja) * 1997-09-10 2000-05-22 日本ピラー工業株式会社 単結晶ＳｉＣ及びその製造方法
JPH11135512A (ja) * 1997-10-31 1999-05-21 Mitsubishi Electric Corp 電力用半導体装置及びその製造方法
EP0967304B1 (en) * 1998-05-29 2004-04-07 Denso Corporation Method for manufacturing single crystal of silicon carbide
JP2917149B1 (ja) 1998-07-13 1999-07-12 日本ピラー工業株式会社 単結晶ＳｉＣおよびその製造方法
US6218680B1 (en) * 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
US6734461B1 (en) * 1999-09-07 2004-05-11 Sixon Inc. SiC wafer, SiC semiconductor device, and production method of SiC wafer
US6824611B1 (en) * 1999-10-08 2004-11-30 Cree, Inc. Method and apparatus for growing silicon carbide crystals
US6428621B1 (en) * 2000-02-15 2002-08-06 The Fox Group, Inc. Method for growing low defect density silicon carbide
AU2001249175A1 (en) 2000-03-13 2001-09-24 Ii-Vi Incorporated Axial gradient transport apparatus and process for producing large size, single crystals of silicon carbide
EP1439246B1 (en) 2000-04-07 2008-06-25 Hoya Corporation Process for producing silicon carbide single crystal
US6754104B2 (en) * 2000-06-22 2004-06-22 Progressant Technologies, Inc. Insulated-gate field-effect transistor integrated with negative differential resistance (NDR) FET
JP3761418B2 (ja) * 2001-05-10 2006-03-29 Ｈｏｙａ株式会社 化合物結晶およびその製造法
TW583354B (en) * 2001-05-25 2004-04-11 Mitsui Shipbuilding Eng Method for producing amorphous SiC wafer
US20020189536A1 (en) 2001-06-15 2002-12-19 Bridgestone Corporation Silicon carbide single crystal and production thereof
US6488771B1 (en) * 2001-09-25 2002-12-03 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for growing low-defect single crystal heteroepitaxial films
DE10247017B4 (de) 2001-10-12 2009-06-10 Denso Corp., Kariya-shi SiC-Einkristall, Verfahren zur Herstellung eines SiC-Einkristalls, SiC-Wafer mit einem Epitaxiefilm und Verfahren zur Herstellung eines SiC-Wafers, der einen Epitaxiefilm aufweist
JP3776374B2 (ja) * 2002-04-30 2006-05-17 株式会社豊田中央研究所 ＳｉＣ単結晶の製造方法，並びにエピタキシャル膜付きＳｉＣウエハの製造方法
US6657276B1 (en) * 2001-12-10 2003-12-02 Advanced Micro Devices, Inc. Shallow trench isolation (STI) region with high-K liner and method of formation
JP3895978B2 (ja) * 2001-12-12 2007-03-22 新日本製鐵株式会社 炭化珪素単結晶育成用種結晶、炭化珪素単結晶インゴット、及びこれらの製造方法
JP2003183097A (ja) * 2001-12-17 2003-07-03 Nippon Steel Corp 炭化珪素単結晶インゴット及びその製造方法
JP3881562B2 (ja) 2002-02-22 2007-02-14 三井造船株式会社 ＳｉＣモニタウェハ製造方法
DE60335252D1 (de) * 2002-04-04 2011-01-20 Nippon Steel Corp Impfkristall aus siliciumcarbid-einkristall und verfahren zur herstellung eines stabs damit
JP2004031470A (ja) 2002-06-24 2004-01-29 Matsushita Electric Ind Co Ltd 単結晶ＳｉＣを用いた半導体デバイスと、それを用いた電力変換装置
US6814801B2 (en) * 2002-06-24 2004-11-09 Cree, Inc. Method for producing semi-insulating resistivity in high purity silicon carbide crystals
US7601441B2 (en) * 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
US7220313B2 (en) * 2003-07-28 2007-05-22 Cree, Inc. Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient
US7147715B2 (en) * 2003-07-28 2006-12-12 Cree, Inc. Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen
US6783592B2 (en) * 2002-10-10 2004-08-31 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Lateral movement of screw dislocations during homoepitaxial growth and devices yielded therefrom free of the detrimental effects of screw dislocations
FR2852974A1 (fr) * 2003-03-31 2004-10-01 Soitec Silicon On Insulator Procede de fabrication de cristaux monocristallins
JP3764462B2 (ja) * 2003-04-10 2006-04-05 株式会社豊田中央研究所 炭化ケイ素単結晶の製造方法
US7033912B2 (en) 2004-01-22 2006-04-25 Cree, Inc. Silicon carbide on diamond substrates and related devices and methods
US7192482B2 (en) * 2004-08-10 2007-03-20 Cree, Inc. Seed and seedholder combinations for high quality growth of large silicon carbide single crystals
US7300519B2 (en) * 2004-11-17 2007-11-27 Cree, Inc. Reduction of subsurface damage in the production of bulk SiC crystals
WO2008033994A1 (en) * 2006-09-14 2008-03-20 Cree, Inc. Micropipe-free silicon carbide and related method of manufacture
US7449065B1 (en) * 2006-12-02 2008-11-11 Ohio Aerospace Institute Method for the growth of large low-defect single crystals
EP2498293B1 (en) * 2009-11-06 2018-08-01 NGK Insulators, Ltd. Epitaxial substrate for semiconductor element and method for producing epitaxial substrate for semiconductor element
CN104246023B (zh) * 2012-04-20 2019-02-01 贰陆股份公司 大直径高品质的SiC单晶、方法和设备

Also Published As

Publication number Publication date
US20060073707A1 (en) 2006-04-06
EP1797225B2 (en) 2017-10-18
EP2584071A1 (en) 2013-04-24
JP5572295B2 (ja) 2014-08-13
EP1797225B1 (en) 2013-03-06
US20080169476A1 (en) 2008-07-17
US7314520B2 (en) 2008-01-01
JP2012214379A (ja) 2012-11-08
EP2584071B1 (en) 2014-10-22
US20130161651A1 (en) 2013-06-27
JP2008515748A (ja) 2008-05-15
EP1797225A2 (en) 2007-06-20
TW200629390A (en) 2006-08-16
JP2009035477A (ja) 2009-02-19
WO2006041659A3 (en) 2006-06-08
JP5410572B2 (ja) 2014-02-05
US8785946B2 (en) 2014-07-22
US8384090B2 (en) 2013-02-26
KR20070054719A (ko) 2007-05-29
CN101061262A (zh) 2007-10-24
CN101061262B (zh) 2013-06-12
WO2006041659A2 (en) 2006-04-20

Similar Documents

Publication Publication Date Title
TWI313892B (en) Low 1c screw dislocation 3 inch silicon carbide wafer
TWI294925B (en) Low micropipe 100 mm silicon carbide wafer
TWI333004B (en) One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
TWI343423B (en) Low basal plane dislocation bulk grown sic wafers
TWI314958B (en) Process for producing high quality large size silicon carbide crystals
TW200307064A (en) Method for preparing SiC crystal with reduced micro-pipes extended from substrate, SiC crystal, SiC monocrystalline film, SiC semiconductor component, SiC monocrystalline substrate and electronic device, and method for producing large SiC crystal
TW200534360A (en) Reduction of carrot defects in silicon carbide epitaxy
CN107002282A (zh) 外延碳化硅单晶晶片的制造方法以及外延碳化硅单晶晶片
JPWO2020059810A1 (ja) デバイス作製用ウエハの製造方法
EP4567165A1 (en) Method for manufacturing 3c-sic laminated substrate, 3c-sic laminated substrate, and 3c-sic independent substrate
JP2000044393A (ja) 炭化珪素単結晶の製造方法
JP2010278208A (ja) 炭化シリコン膜の製造方法

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent