AU2001249175A1 - Axial gradient transport apparatus and process for producing large size, single crystals of silicon carbide - Google Patents

Axial gradient transport apparatus and process for producing large size, single crystals of silicon carbide

Info

Publication number
AU2001249175A1
AU2001249175A1 AU2001249175A AU4917501A AU2001249175A1 AU 2001249175 A1 AU2001249175 A1 AU 2001249175A1 AU 2001249175 A AU2001249175 A AU 2001249175A AU 4917501 A AU4917501 A AU 4917501A AU 2001249175 A1 AU2001249175 A1 AU 2001249175A1
Authority
AU
Australia
Prior art keywords
silicon carbide
reaction chamber
single crystals
large size
transport apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001249175A
Inventor
William J. Everson
David W. Snyder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coherent Corp
Original Assignee
II VI Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by II VI Inc filed Critical II VI Inc
Publication of AU2001249175A1 publication Critical patent/AU2001249175A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Abstract

Disclosed is an apparatus and a method for growing single crystals of materials such as silicon carbide through axial gradient transport. A source of the material (10) is placed at one end of a reaction chamber (2) opposite a seed crystal (13). Separate heating elements (16 and 60; 20 and 62) are positioned at opposite ends of the reaction chamber. The reaction chamber (2) is placed in a growth chamber (26). By appropriately controlling the vacuum in the growth chamber (26) and the temperature of the heating elements (16, 20), including the temperature differential therebetween, a uniaxial temperature gradient is generated in the reaction chamber (2). In this manner, planar isotherms are generated and a high quality crystal can be grown through a physical vapor transport process.
AU2001249175A 2000-03-13 2001-03-13 Axial gradient transport apparatus and process for producing large size, single crystals of silicon carbide Abandoned AU2001249175A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US18879300P 2000-03-13 2000-03-13
US60188793 2000-03-13
PCT/US2001/007966 WO2001068954A2 (en) 2000-03-13 2001-03-13 Axial gradient transport apparatus and process

Publications (1)

Publication Number Publication Date
AU2001249175A1 true AU2001249175A1 (en) 2001-09-24

Family

ID=22694546

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001249175A Abandoned AU2001249175A1 (en) 2000-03-13 2001-03-13 Axial gradient transport apparatus and process for producing large size, single crystals of silicon carbide

Country Status (7)

Country Link
US (1) US6800136B2 (en)
EP (1) EP1268882B1 (en)
JP (1) JP5179690B2 (en)
AT (1) ATE509147T1 (en)
AU (1) AU2001249175A1 (en)
TW (1) TW548352B (en)
WO (1) WO2001068954A2 (en)

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Publication number Priority date Publication date Assignee Title
US7601441B2 (en) * 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
US7314520B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
US7918937B2 (en) 2005-08-17 2011-04-05 El-Seed Corp. Method of producing silicon carbide epitaxial layer
JP2007112661A (en) * 2005-10-20 2007-05-10 Bridgestone Corp Method and apparatus for manufacturing silicon carbide single crystal
US20070128762A1 (en) * 2005-12-02 2007-06-07 Lucent Technologies Inc. Growing crystaline structures on demand
WO2009003100A1 (en) * 2007-06-27 2008-12-31 Ii-Vi Incorporated Fabrication of sic substrates with low warp and bow
CN104120489B (en) * 2008-12-08 2017-04-26 Ii-Vi有限公司 SiC single-crystal crystal ingot in high crystalline quality, and method for forming thereof
DE102010029756B4 (en) 2010-06-07 2023-09-21 Sicrystal Gmbh Manufacturing process for a bulk SiC single crystal with a large facet and a single crystal SiC substrate with a homogeneous resistance distribution
CN104246023B (en) 2012-04-20 2019-02-01 贰陆股份公司 The SiC single crystal of major diameter high-quality, method and apparatus
US20170321345A1 (en) * 2016-05-06 2017-11-09 Ii-Vi Incorporated Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture Thereof
RU173041U1 (en) * 2017-02-20 2017-08-08 федеральное государственное автономное образовательное учреждение высшего образования "Северо-Кавказский федеральный университет" Device for producing perfect single crystals of silicon carbide with additional control circuits for induction heating
CN109234799B (en) * 2018-11-02 2019-07-09 山东天岳先进材料科技有限公司 A method of improving PVT method silicon carbide monocrystal growth quality
KR102236396B1 (en) * 2020-05-29 2021-04-02 에스케이씨 주식회사 Manufacturing method for silicon carbide ingot and system for manufacturing silicon carbide ingot
EP4130349A4 (en) * 2020-05-06 2023-10-18 Meishan Boya Advanced Materials Co., Ltd. Crystal preparation apparatus and growth method
CN111254486A (en) * 2020-05-06 2020-06-09 眉山博雅新材料有限公司 Crystal preparation device

Family Cites Families (18)

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US4147572A (en) 1976-10-18 1979-04-03 Vodakov Jury A Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US5433167A (en) 1992-02-04 1995-07-18 Sharp Kabushiki Kaisha Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal
JPH061699A (en) * 1992-06-19 1994-01-11 Nisshin Steel Co Ltd Device for producing silicon carbide single crystal
US5441011A (en) 1993-03-16 1995-08-15 Nippon Steel Corporation Sublimation growth of single crystal SiC
JPH0710697A (en) * 1993-06-28 1995-01-13 Nisshin Steel Co Ltd Device for producing silicon carbide single crystal
US5611955A (en) 1993-10-18 1997-03-18 Northrop Grumman Corp. High resistivity silicon carbide substrates for high power microwave devices
JP3902225B2 (en) * 1994-12-01 2007-04-04 エスアイクリスタル アクチエンゲゼルシャフト Method and apparatus for producing silicon carbide single crystal by sublimation breeding
US5683507A (en) 1995-09-05 1997-11-04 Northrop Grumman Corporation Apparatus for growing large silicon carbide single crystals
US5746827A (en) 1995-12-27 1998-05-05 Northrop Grumman Corporation Method of producing large diameter silicon carbide crystals
JP3491429B2 (en) * 1996-02-14 2004-01-26 株式会社デンソー Method for producing silicon carbide single crystal
JP3553744B2 (en) * 1996-09-27 2004-08-11 日本碍子株式会社 Manufacturing method of laminated member
JP3237069B2 (en) * 1996-09-30 2001-12-10 三菱マテリアル株式会社 Method for producing SiC single crystal
GB9624715D0 (en) * 1996-11-28 1997-01-15 Philips Electronics Nv Electronic device manufacture
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WO2000039372A1 (en) * 1998-12-25 2000-07-06 Showa Denko K. K. Method for growing single crystal of silicon carbide

Also Published As

Publication number Publication date
US20030037724A1 (en) 2003-02-27
JP5179690B2 (en) 2013-04-10
JP2003527295A (en) 2003-09-16
WO2001068954A2 (en) 2001-09-20
WO2001068954A3 (en) 2002-04-18
EP1268882B1 (en) 2011-05-11
ATE509147T1 (en) 2011-05-15
TW548352B (en) 2003-08-21
EP1268882A2 (en) 2003-01-02
EP1268882A4 (en) 2008-01-23
US6800136B2 (en) 2004-10-05

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