TWI307923B - Spin etcher with thickness measuring system - Google Patents

Spin etcher with thickness measuring system Download PDF

Info

Publication number
TWI307923B
TWI307923B TW092105949A TW92105949A TWI307923B TW I307923 B TWI307923 B TW I307923B TW 092105949 A TW092105949 A TW 092105949A TW 92105949 A TW92105949 A TW 92105949A TW I307923 B TWI307923 B TW I307923B
Authority
TW
Taiwan
Prior art keywords
substrate
optical
light
thickness
device block
Prior art date
Application number
TW092105949A
Other languages
English (en)
Chinese (zh)
Other versions
TW200306623A (en
Inventor
Chung-Sik Kim
Jeong-Yong Bae
Original Assignee
Semes Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semes Co Ltd filed Critical Semes Co Ltd
Publication of TW200306623A publication Critical patent/TW200306623A/zh
Application granted granted Critical
Publication of TWI307923B publication Critical patent/TWI307923B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
TW092105949A 2002-04-12 2003-03-18 Spin etcher with thickness measuring system TWI307923B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2002-0019925A KR100452918B1 (ko) 2002-04-12 2002-04-12 두께측정시스템이 구비된 회전식각장치

Publications (2)

Publication Number Publication Date
TW200306623A TW200306623A (en) 2003-11-16
TWI307923B true TWI307923B (en) 2009-03-21

Family

ID=29244722

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092105949A TWI307923B (en) 2002-04-12 2003-03-18 Spin etcher with thickness measuring system

Country Status (5)

Country Link
US (1) US7154611B2 (ja)
JP (1) JP3790519B2 (ja)
KR (1) KR100452918B1 (ja)
CN (1) CN1293618C (ja)
TW (1) TWI307923B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI452644B (zh) * 2011-05-17 2014-09-11 Univ Nat Yunlin Sci & Tech 蝕刻深度量測方法及其裝置

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100587391B1 (ko) * 2004-12-21 2006-06-08 동부일렉트로닉스 주식회사 고전압 소자의 게이트 절연막 식각방법
JP4835175B2 (ja) 2006-01-31 2011-12-14 株式会社Ｓｕｍｃｏ ウェーハの枚葉式エッチング方法
CN1869284B (zh) * 2006-04-06 2010-08-04 株洲南车时代电气股份有限公司 一种旋转喷腐方法的化学挖槽工艺方法及装置
KR100766193B1 (ko) * 2006-04-19 2007-10-10 광주과학기술원 전기화학적 에칭법을 이용한 마이크로 탐침 제조방법 및 그장치
KR100917612B1 (ko) * 2007-10-17 2009-09-17 삼성전기주식회사 기판의 가공 방법
JP5179206B2 (ja) * 2008-01-25 2013-04-10 株式会社ディスコ 板状物の切削加工方法
US7972969B2 (en) 2008-03-06 2011-07-05 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for thinning a substrate
JP6091193B2 (ja) * 2011-12-27 2017-03-08 芝浦メカトロニクス株式会社 基板の処理装置及び処理方法
CN103187341B (zh) * 2011-12-27 2015-11-18 芝浦机械电子株式会社 基板的处理装置及处理方法
KR101323152B1 (ko) * 2012-02-08 2013-11-04 신동수 유리 기판의 식각 공정시 두께 모니터링 시스템
JP6289930B2 (ja) * 2014-02-18 2018-03-07 株式会社ディスコ ウェットエッチング装置
EP3095709B1 (en) * 2015-05-20 2018-01-10 Goodrich Lighting Systems GmbH Exterior aircraft lighting device
JP6561894B2 (ja) * 2016-04-01 2019-08-21 株式会社デンソー エッチング装置
TWI821761B (zh) * 2016-05-06 2023-11-11 美商應用材料股份有限公司 用於蝕刻系統的晶圓輪廓
CN106338236A (zh) * 2016-09-28 2017-01-18 天津华海清科机电科技有限公司 膜厚度测量装置及具有其的用于制造晶片的系统
DE102017212887A1 (de) 2017-07-26 2019-01-31 Gebr. Schmid Gmbh Verfahren, Vorrichtung und Anlage zur Leiterplattenherstellung
US11421977B2 (en) * 2018-10-19 2022-08-23 Applied Materials, Inc. Eliminating internal reflections in an interferometric endpoint detection system
JP6804694B1 (ja) * 2019-02-08 2020-12-23 株式会社日立ハイテク エッチング処理装置、エッチング処理方法および検出器
TWI704093B (zh) * 2019-05-09 2020-09-11 辛耘企業股份有限公司 處理液容置裝置
JP7273660B2 (ja) * 2019-08-30 2023-05-15 キオクシア株式会社 半導体製造装置、および半導体装置の製造方法
JP7460411B2 (ja) 2020-03-24 2024-04-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法
JP7409956B2 (ja) 2020-04-28 2024-01-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、及び基板処理方法
KR20230101837A (ko) 2020-11-05 2023-07-06 도쿄엘렉트론가부시키가이샤 기판 처리 장치, 기판 처리 방법 및 컴퓨터 판독 가능한 기록 매체
US11619594B2 (en) * 2021-04-28 2023-04-04 Applied Materials, Inc. Multiple reflectometry for measuring etch parameters
TW202410234A (zh) * 2022-07-12 2024-03-01 日商東京威力科創股份有限公司 基板處理裝置及膜厚推定方法
WO2024097654A1 (en) * 2022-10-31 2024-05-10 Verity Instruments, Inc. Improved optical access for spectroscopic monitoring of semiconductor processes

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678358A (en) 1979-11-29 1981-06-27 Fujitsu Ltd Manufacture of stator for electrical machine
JPS57192954A (en) * 1981-05-23 1982-11-27 Dainippon Screen Mfg Co Ltd Surface processing method
JP2612089B2 (ja) 1990-08-10 1997-05-21 富士通株式会社 被エッチング膜の膜厚検出方法、膜厚検出装置及びエッチング装置
JPH06223418A (ja) * 1993-01-28 1994-08-12 Victor Co Of Japan Ltd 回転塗布方法及びその装置
JP3039761B2 (ja) 1994-04-28 2000-05-08 キヤノン株式会社 画像入力装置および画像入力方法
FI97655C (fi) 1995-04-05 1997-01-27 Nokia Telecommunications Oy Offset-kompensoitu lineaarinen RF-ilmaisin
EP0756318A1 (en) * 1995-07-24 1997-01-29 International Business Machines Corporation Method for real-time in-situ monitoring of a trench formation process
US5827985A (en) * 1995-12-19 1998-10-27 Endress + Hauser Gmbh + Co. Sensor apparatus for process measurement
JPH1027775A (ja) * 1996-07-10 1998-01-27 Daido Steel Co Ltd 化合物半導体エピタキシャルウェハのエッチング終点検出方法
TW346649B (en) 1996-09-24 1998-12-01 Tokyo Electron Co Ltd Method for wet etching a film
JPH10209112A (ja) * 1997-01-27 1998-08-07 Tera Tec:Kk エッチング方法および装置
JPH10270414A (ja) * 1997-03-25 1998-10-09 Tera Tec:Kk エッチング方法および装置
JPH10268236A (ja) 1997-03-25 1998-10-09 Katsuyuki Kageyama 電磁波防止用眼鏡フレーム
JPH10312064A (ja) * 1997-05-14 1998-11-24 Canon Inc 薄膜のパターニング方法、ブラックマトリクス及び液晶素子の製造方法
US6406641B1 (en) * 1997-06-17 2002-06-18 Luxtron Corporation Liquid etch endpoint detection and process metrology
JPH1114312A (ja) * 1997-06-24 1999-01-22 Toshiba Corp 成膜装置及びエッチング装置
US5956142A (en) * 1997-09-25 1999-09-21 Siemens Aktiengesellschaft Method of end point detection using a sinusoidal interference signal for a wet etch process
JP3422799B2 (ja) * 1998-05-01 2003-06-30 東京エレクトロン株式会社 膜厚測定装置、基板処理方法並びに基板処理装置
US5942939A (en) 1998-06-01 1999-08-24 Motorola, Inc. Amplifier and method of canceling distortion by combining hyperbolic tangent and hyperbolic sine transfer functions
IL125964A (en) * 1998-08-27 2003-10-31 Tevet Process Control Technolo Method and apparatus for measuring the thickness of a transparent film, particularly of a photoresist film on a semiconductor substrate
US6334807B1 (en) * 1999-04-30 2002-01-01 International Business Machines Corporation Chemical mechanical polishing in-situ end point system
US6160621A (en) * 1999-09-30 2000-12-12 Lam Research Corporation Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source
JP4347484B2 (ja) * 2000-01-21 2009-10-21 浜松ホトニクス株式会社 厚み計測装置、及びそれを用いたウエットエッチング装置、ウエットエッチング方法
JP4347517B2 (ja) * 2000-12-06 2009-10-21 浜松ホトニクス株式会社 厚み計測装置、及びそれを用いたウエットエッチング装置、ウエットエッチング方法
JP2001294362A (ja) 2000-04-12 2001-10-23 Fuji Xerox Co Ltd 画像形成装置
JP3748527B2 (ja) * 2001-09-26 2006-02-22 大日本スクリーン製造株式会社 エッチング装置およびエッチング方法
US6678055B2 (en) * 2001-11-26 2004-01-13 Tevet Process Control Technologies Ltd. Method and apparatus for measuring stress in semiconductor wafers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI452644B (zh) * 2011-05-17 2014-09-11 Univ Nat Yunlin Sci & Tech 蝕刻深度量測方法及其裝置

Also Published As

Publication number Publication date
JP2003332299A (ja) 2003-11-21
TW200306623A (en) 2003-11-16
KR100452918B1 (ko) 2004-10-14
CN1293618C (zh) 2007-01-03
US20040004724A1 (en) 2004-01-08
CN1452018A (zh) 2003-10-29
JP3790519B2 (ja) 2006-06-28
US7154611B2 (en) 2006-12-26
KR20030081607A (ko) 2003-10-22

Similar Documents

Publication Publication Date Title
TWI307923B (en) Spin etcher with thickness measuring system
US7976896B2 (en) Method of processing a substrate and apparatus processing the same
US5499733A (en) Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
US5891352A (en) Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
US20040182422A1 (en) System and method for integrating in-situ metrology within a wafer process
RU99118579A (ru) Покрытия, способы и устройство для уменьшения отражения от оптических подложек
US20160043007A1 (en) Substrate backside texturing
JP2003203897A (ja) ノズル、基板処理装置、基板処理方法、及び基板処理プログラム
KR100568873B1 (ko) 웨이퍼의 에지 비드 스트립용 노즐장치
JP2020104191A (ja) 光学式膜厚測定システムの洗浄方法
JP2023101596A (ja) 光学式表面監視装置の洗浄方法
EP2218522A1 (en) Method and device for local treatment of substrates
US7993820B2 (en) Pattern manufacturing equipments, organic thin-film transistors and manufacturing methods for organic thin-film transistor
JP2010256452A (ja) マイクロメカニカル構造体の作製方法
JP2003282416A (ja) 半導体装置の製造方法
TW201432818A (zh) 用於進行金屬剝離之方法
KR20170120869A (ko) 마이크로 회로 패터닝 방법
AU2003225324B2 (en) Method and device for local treatment of substrates
KR20100026388A (ko) 웨이퍼 세정 장치 및 방법
JPH1036981A (ja) スピンエッチング方法及びスピンエッチング装置
KR100868624B1 (ko) 파티클 검출 장치
KR20090011757A (ko) 분사노즐 및 이를 갖는 공정액 도포장치
AU2004271224B2 (en) Adjustment of masks by re-flow
KR100468529B1 (ko) 에천트 도포장비 및 이를 이용한 습식식각 방법
KR100563485B1 (ko) 에지 비드 제거 장치 및 방법

Legal Events

Date Code Title Description
MK4A Expiration of patent term of an invention patent