TWI283457B - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device Download PDF

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Publication number
TWI283457B
TWI283457B TW92104240A TW92104240A TWI283457B TW I283457 B TWI283457 B TW I283457B TW 92104240 A TW92104240 A TW 92104240A TW 92104240 A TW92104240 A TW 92104240A TW I283457 B TWI283457 B TW I283457B
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TW
Taiwan
Prior art keywords
semiconductor
tape
semiconductor device
mother substrate
manufacturing
Prior art date
Application number
TW92104240A
Other languages
English (en)
Other versions
TW200308055A (en
Inventor
Masaru Kawakami
Original Assignee
Elpida Memory Inc
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Publication date
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Publication of TW200308055A publication Critical patent/TW200308055A/zh
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Publication of TWI283457B publication Critical patent/TWI283457B/zh

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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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    • H01L2924/19043—Component type being a resistor

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1283457 玖、發明說明： 技術領域 本發明係關於一種半導體裝置之製造方法，尤其是關於 一種有效技術適用於使用製品形成部以縱橫方式整齊排列 配置形成於主面上的基板（配線母基板），並在各製品^成部 上搭載厚度薄至100 m以下之半導體元件（半導體晶片）， 利用導電性之金屬線來連接半導體元件之各電極配線母 基板之配線，再以絕緣性樹脂層被覆配線母基板之主面 側，以在配線母基板背面之配線上形成凸塊電極（突起電 極），其次將配線母基板在樹脂層彼此與製品形成部之邊= 予以切斷而製造薄型半導體裝置的技術中者。 先前技術 作為半導體裝置（半導體積體電路裝置）之製造技術之一， 較為人所周知者有使用製品形成部以縱橫方式整齊排列配 置形成於主面上的配線母基板，並在各製品形成部上搭載 半導體元件，利用導電性之金屬線來連接半導體元件之各 電極與配線母基板之配線’再以絕緣性樹脂層被覆配線母 基板之主面側，之後將配線母基板在樹脂層彼此與製品形 成部之邊界予以切斷而製造半導體裝置的技術。 y 又，在日本專利特開平10_27836號公報中，有揭示一種 雖非為使用配線母基板之半導體裝置之製造方法，但是在 進行功叱元件之動作檢查後的基板表面上貼附保護膠帶， 之後刮削基板背面，且在基板背面貼附切割膠帶，切斷基 板並分離成每一複數個功能元件以形成晶片零件，將晶片 !283457 :件自切割膠帶拾取並介以指定糊材搭載於指定封裝構件 ’使糊材硬化後，再去除保護膠帶的技術。在該技術 ，係訝厚度620 /zm之基板進行背面磨光以形成4〇〇“m。 又i在自切割膠帶拾取晶片零件的情況，係利用丨支頂起針 將叩片零件頂起，同時利用平頭吸具（c〇u叫來保持晶片零
件。 V 發明内容 (發明所欲解決之問題） 本申請人係從半導體裝置之薄型化方面，來檢討組入厚 度100/zm以下之半導體元件後的厚度為〇·5 mm以下之半導 缸裝置該軸況，係採用使用將製品形成部以縱橫方式整 齊排列形成於主面上的配線母基板，且在製造之最終階段 對配線母基板作縱橫切斷以將各製品形成部當作半導體裝 置的方法。 圖15係顯示早於本發明而先行檢討之半導體裝置的模式 剖視圖；圖16係顯示同圖15之半導體裝置之製造方法的流 程圖。 如圖15所示，半導體裝置6〇係包含有由配線基板構造所 構成的基板61，·固定於該基板61之主面（圖中上面）上的半導 體元件62 ;連接半導體元件62表面之未圖示的電極與形成 於基板61之主面上之未圖示的配線之導電性金屬線〇，•被 覆半導體元件62或金屬線63等且由設於基板61之主面上的 絕緣性樹脂所構成的密封體64 ;以及設於基板6丨之背面的 凸塊電極（突起電極）65。凸塊電極65係形成於設在基板61背 1283457 面之未圖不的配線上。基板61之周面及密封體料之周面由 於係構成以切割刀所切斷的自，所以基板61及密封體料之 各周面係每一各周面分別位於同一面上。 孩種的半導體裝置6G’例如係按照圖16所示之流程圖來 ，造。亦即’在準備形成半導體元件的半導體元件部以縱 橫方式整齊排列形成於主面上的半導體母基板（晶圓）之後， 於晶圓之主面全區上貼附保護膠帶(S301)。其次，研磨(背 面磨光：BG)晶圓之背面俾使厚度75()"m之晶圓成為_ mm之厚度（S302)。 其次，自晶圓剝離保護膠帶（謂3),且在晶圓之背面貼附 :刀割膠帶_4)。之後，以切劉刀將晶圓作縱橫切斷… d · S305)。在利用切割刀進行的切斷中，係在半導體元件 邵之邊界進行切斷，且切斷係設為切割膠帶之中途深度。 ^ 被刀離的各半導體元件係呈由切割膠帶支持的狀 態。 其次，在準備構成半導體裝置之製品形成部以縱橫方式 }齊排列形成於主面上的配線母基板之後，每次拾取一個 刀°'〗膠τ上之半導體元件並將之運送固定在上述各製品形 $部之半導體元件固定部上（晶片接合：S306)，接著利用導 電性金屬線㈣接半導體元件之電極與配線母基板之配線 (打線接合：S307>。 二入在配線母基板之主面上形成絕緣性樹脂層俾於被 覆半導體元件及金屬線（樹脂層形成：S308)。 八’入，在配線母基板之背面形成凸塊電極（突起電 1283457 極）(S309)。凸塊電極係形成於配線母基板背面之配線（電 極）上。 其次，在絕緣性樹脂層之主面上貼附支持體，同時利用 切割刀沿著製品形成物之邊界’纟自配線母基板開始並經 過絕緣性樹脂層而切斷至上述支持體之中途深度為止以將 各製品形成部個片化（S31〇)。依該切斷所得的個片化，即可 製造複數個如圖15所示的半導體裝置，6〇。 但是，在該種的半導體裝置之製造方法中，其對晶圓之 背面進行背面磨光（研磨）使晶圓之厚度成為1〇〇以瓜以下且 與習知之40”m相較可大幅減薄。該種的極薄晶圓容易破 裂’進而容易發生缺陷，且難以處理。 、又，在晶片接合步驟中，雖係將頂起針自切割膠帶之下 万頂起以使半導體元件浮起，同時在使之下降的吸具之下 面真空吸附保持半導體元件並進行半導體元件之拾取，但 是在該吸具所進行的半導體元件之處理中，由於 :(半導體晶片)薄至10〇™下，所以·容易發生破裂；缺 ^。又’由於吸具之保持面係直接接觸半導體元件以 容易傷及半導體元件之表面。 圓)=:之目的係在於其不易發生極薄之半導體母基板(晶 回)的破灰、缺陷’且提高半導體裝置之製造良率者。 /發明之另一目的係在於提供一種抑止半導體元件之製 &及+導體元件之搭載等半導體元件之處理時的' 件<破裂、缺陷發生並製造廉價的半導體裝置之方法。疋 本發明之前面說明及其他之目的與新類的特徵，從本說 Ϊ283457 明書之記載及附圖中將 (解決問題之手段） 若簡單說明本案所揭 如以下所述。 可更加明白。 示之發明中作為其代表 的概要，則 (1)在本發明 < 半導體裝置 導麵签Λ 4㈠曰 ^ k万法中，係分別準備半 導植母基板（晶圓）及製品形 i ® l· ^ ^ ^ 4 ^縱檢万式整齊排列形成於 M^ ^ 具耐熱性且透明之黏著膠帶所 構成的保護膠帶來被覆晶圓之 . 圓士北^、 3圓足王面，同時研磨（背面磨光）晶 圓之Η面以將晶圓之屋户形士、 持之切… 於00_以下’在框體所支 … / A以月面而貼附晶圓，利用切割刀將晶圓 〈王面側並包含保護膠帶切斷至切割膠帶之中途深度為止 以形成切割膠帶所支持的複數個半導體元件（半導體晶片）， 且以真空吸附型之吸具每次拾取-個切割膠帶上之半導體 -件並運送固定在半導體母基板之各製品形成部的半導 體元件固定部上，再去除貼附在各半導體元件之主面上的 保護膠帶，並利用導電性金屬線來連接半導體元件之電極 與配線母基板之配線，且在配線母基板之主面上形成絕緣 性樹脂層俾於被覆半導體元件及金屬線等，在絕緣性樹脂 層之主面上貼附支持體並依支持體來支持配線母基板，再 利用切割刀沿著製品形成部之邊界而自配線母基板並經過 絕緣性樹脂層而切斷至上述支持體之中途深度為止以將各 製品形成部個片化（半導體元件化），藉由自支持體剥離製品 形成部以製造半導體裝置。在形成上述絕緣性樹脂之後， 於上述配線母基板背面之配線表面上形成突起電極（凸塊電 1283457 植）°選擇絕緣性樹脂層之厚度以將半導體裝置之厚度製造 於〇·5 mm以下。 若依據上述（1)之手段，則（a)晶圓之主面可由保護膠帶所 被覆。因而，在處理晶圓時晶圓之主面就不易被污染、或 損傷。又’保護膠帶不僅可保護晶圓之主面亦可成為強度 構件。結果，在處理晶圓時就不易發生破裂、缺陷。此在 依背面磨光而變得更薄的晶圓中就更有效果。 (b)由於晶圓主面係由保護膠帶所保護，所以依切割刀進 仃切斷時，不僅可防止表面污染，而且經切斷之邊緣或半 導體元件部之表面不易損傷。結果，不易發生半導體元件 又破裂、缺陷，且可提高半導體元件之品質及製造良率。 (0由於在切割後，半導體元件亦可利用保護膠帶來保護 主面，所以可防止表面污染或受傷。又，由於保護膠帶可 成為強度構件，所以即使在拾取時因頂起針之頂起、或因 吸具爻真空吸附保持、搬運及晶片固定方面，半導體元件 亦不易損傷。 (d)由於在形成絕緣性樹脂層後，係將配線母基板與樹脂 層-起切斷所以可同時製造多量的半導體$置，且可減低 半導體裝置之製造成本。 _ 匕⑷由於半導體元件係形成⑽心以下，所以藉由減薄樹 脂層，即可將所製造的半導體裝置之厚度薄型化狀5咖 以下。 實施方式 外 乂下，係參照圖式詳細說明本發明之實施形態。另 1283457 在說月發明之實施形態用的全圖+，具有同一功能者將附 1己相同^件符號，並省略其重覆說明。 (實施形態1) 蝴圖1至圖I4係關於本發明之一實施形態（實施形態υ之半導 體裝置之製造方法的示意圖。圖丨係本實施形態丨之半導體 裝置的模式剖視圖，圖2至圖丨*係關於本實施形態1之半導 體裝置之製造方法的示意圖。 圖1係依本實施形態丨之半導體裝置之製造方法所製造的 半導體裝置1之模式剖視圖。 如圖1所示，本實施形態丨之半導體裝置丨，係包含有由配 線基板構造所構成的基板2;固定於該基板2之主面（圖中上 面）上的半導體元件3 ;連接半導體元件3表面之未圖示的電 極與形成於基板2之主面上之未圖示的配線之導電性金屬線 4;被覆半導體裝置1及金屬線4等且由設於基板2之主面上 的絕緣性樹脂所構成的密封體5 ;以及設於基板2之背面的 凸塊電極（突起電極）6。凸塊電極6係形成於設在基板2背面 之未圖示的配線上。基板2之周面及密封體5之周面由於成 為以切割刀所切斷的面，所以基板2及密封體5之各周面係 母一各周面分別位於同'一面上。 基板2係成為ΙΟΟαπι左右的厚度，半導體元件3係成為1〇〇 左右的厚度，密封體5之厚度係成為200 /z m左右的厚 度’始自凸塊電極6之基板2背面的突出長度係成*1〇〇#m 左右，半導體裝置1係成為〇·5 mm以下的薄型。 如圖2之流程圖所示，該種的半導體裝置1，係在準備晶 12 1283457 圓之後，經過貼附保護膠帶（S101)、背面磨光（s〗〇2)、貼附 切割膠帶（SW3)、切劉（S1〇4)、晶片接合⑻〇5)、剝離保護 膠帶（去除·· S106)、打線接合（S107)、形成樹脂層（si〇8)、 形成凸塊電極（S109)、個片切斷（S110)之各步驟而製造成為 最終製品者。 其次，沿著上述各步驟說明半導體裝置之製造方法。最 初，準備半導體母基板（晶圓）3a及配線母基板“。 _圖3所不，上述晶圓3a，雖未圖示，但是其係呈圓形， 同時其_邵分被切斷成直線狀而成方向識別用的面（OF?)。 又，沿著該OFF以縱橫方式整齊㈣形成有 該半導體元件部係成為矩形之半導體元件的部分，且形成 有指定的電路又，在該半導體元件部之主面（圖中為 上面）上，雖未圖示但有露出電極。晶圓2a,係例如成為75〇 的厚度，且形成8叶的直徑。圖3所示的虛線係依背面研 磨（背面磨光）所進行的最終研磨位置。 2万面’上返配線母基板2a，係如圖7及圖8所示以俯 =，包含有周緣之框體部u、及框體部u内側之一群 却八4成㈣。製品形成部12係製造ι個半導體裝置⑽ U齊：：圖8所示’係在配線母基板2a之主面上以縱橫方 但是在其主面及成為主：中’雖有省略， .,. 成為面又相反面的背面上設有配線，同 時表裡艾配線係w畜云 .、、 只穿配線母基板2a之導體來電連 接。其王面係固定有半導 塊電極I、 等把兀件的面，而背面係形成有凸 ^外㈣極端子的面。配線母基板2a，係由破璃 -13- 1283457 環氧樹脂基板等的樹脂配線基板所構成。 其次，如_3所示，在上述晶圓从主面全區上貼附保護 膠帶15(S101 :參照圖3)。保護膠㈣，係呈透明俾於在切··‘ 割時可看到晶圓3a之主面的切割線等。χ，保護膠帶15係、·· · 對半導體裝置《各製程中的熱具有十分抗熱的耐熱性膠帶 (耐熱溫度200°C左右）。又，保護膠帶15之一面係成為可黏 接的黏著膠帶。再者，保護膠帶15，係成為丨⑻^㈤左右的 、 厚度，且具有強度構件之作用。保護膠帶15，例如由聚醯 亞胺樹脂膠帶所構成。 — 另外，保護膠帶15，亦可使用耐熱性之紫外線照射硬化 』膠▼。孩情況，係在晶圓3a之主面貼附紫外線照射硬化 型膠帶’當要去除時對紫外線照射硬化型膠帶照射紫外線 以使黏接部分硬化並使黏接性劣化。之後，使該紫外線照 射硬化型膠帶去除（剝離）。 由於晶圓3a之主面係由保護膠帶15所被覆，所以在處理 晶圓時晶圓3a之主面不易受到污染、或受傷。又保護㈣ # 15不僅保護晶圓3a之主面且亦成為強度構件。結果，在處 理晶圓時不易發生破裂、缺陷。 八’入，研磨（¾面磨光：BG)晶圓之背面俾使厚度a爪 ； 之晶圓成為⑽麵之厚度（議）β即使在該背面磨光中強·‘ 度不夠的晶圓3a亦可藉由保護膠帶15來補強。該補強係在 依寿面磨光而變得更薄的晶圓中更有效果。 其次’如圖4所示’將晶圓3a介以其背面而貼附在常用的 切割膠帶16上（S103)。切割膠帶16係將其外周部分張設在支 -14- 1283457 持框17上。之後’如圖5所示，以切割刀i8將晶圓3啡縱俨 切斷（切割：S104)。利用切割刀18所進行的切斷，係在界 h中以縱橫方式整齊排列形成的半導體元件部之邊界^ 切斷。亦即，切割係以格子狀進行。該情況，係在朝第二 方向依序切斷之後’朝與該第一方向正交的第二方 進行切斷以結束格子狀之切斷。 在該切割中，切斷係設為切割膠帶16之中途深度。因 而’依切斷而分離的各半導體元件3係呈貼附在切割膠㈣ 上所支持的狀態。 在該切割中’雖然保護膠帶15亦被切斷，但是由於 係以保持貼附之狀態進行，所以半導體元件3之主面保 護膠帶㈣護。X ’依切割刀18進行切斷時，不僅可防 止晶圓3a及依切斷而形成之半導體元件3的表面受冷染，且 已切斷之邊緣或半導體元件3之表面不易受到損傷，不易發 生丰導體7°件3〈破裂、缺陷，而可提高半導體S件之品質 及製造良率。 負 在該切割之後，由切劃膠帶16支持的半導體元件3亦可利 用保護膠帶15來保護其表面（主面）。 其次，以每次拾取一個切割膠帶16上之半導體元件 送固定在配線母基板^各製品形成部12的半 足邵上u片接合：綱。圖8及圖7係顯示在配 固 之主面上固定（搭幻具有保護膠帶15之半導體 = 的俯視圖及剖視圖。 ^ ^ 又，圖6⑷〜⑷係顯示拾取切刻膠帶“上之半導體元件3 -15 - 1283457 之狀態的模式圖。亦即，如圖6(a)所示，自切割膠㈣之上 方使真空吸附型之吸具2GT降至指定的半導體元件3之正上 方，並使四角錐凹陷面所播占 丨曰甸所構成的保持面接近半導體元 3(參照圖6(b))。 其次’使位於上述吸具20之正下方的複數個頂起針。上 升，並使之貫穿切割膠帶16以將半導體元件3往上推。使其 與之連動’並使吸具2〇進行真空吸引動作以使吸具之四 角錐凹陷面真空吸附保持半導體元件3(參照圖㈣。之 後，吸具20係將半導體元件3搬運至指定部位（參昭圖 6⑷）。 、吸具20’係依序將半導體元件3搬運至上述配線母基板^ 之各製品形成部12的半導體元件固定部上，並以事先供至 半導體元件固定部與半導體元件3之間的接合材料予以、固 定。 、於該固定時，由於半導體元件3之主面的周緣係由吸具2〇 之四角錐凹陷面之各傾斜的面所支持’所以半導體元件罐 常有靠近吸具20之中心的作用β因而，半導體元件3之固定 位置可對應於配線母基板2心及具2G之停止位置而正確決 定。又，由於吸具20係以四角雖凹陷面來捕捉半導體元件 3,所以使吸具2G與配㈣基板2a之主面作平行振動即可固 足半導體元件3。導體元件3之^係利用銀糊等之糊 材、金與錫之合金層或是金與以合金層等所進行的固 定。 另外，由於頂起針2丨很細，相形成Μ切曲或損傷 -16- 1283457 之方式分別沿著導件22而上下動的構造。 又，圖8中半導體元件3周圍之實線及虛線係後述的切斷 線’而圍住半導體元件3之該等線所圍之四角形區域係製品 形成部12。亦可沿著上述實線及虛線而事先設置v溝槽等， 以在將配線母基板2a個片化成每一製品形成部12時，可簡 單進行切斷。 其’入’去除（剥離）固定於配線母基板2 a之主面上的半導體 元件3表面之保護膠帶15(31〇6)。圖9係例示去除保護膠帶15 的手段。 如圖9(a)所示，第一保護膠帶去除手段，係將從膠帶捲出 捲筒30解開出並捲繞在膠帶捲繞捲筒31上的黏著膠帶32, 按壓在保護膠帶15上，該保護膠帶15係貼附在固定於配線 母基板2a之主面的半導體元件3之主面上，使黏著膠帶32黏 接保護膠帶15，之後，藉由使黏著膠帶32自半導體元件3相 對地離開即可從半導體元件3拆除保護膠帶丨5。 具體而T ’使移動輥33如箭號所示地以加壓狀態接觸自 膠帶捲出捲筒30解開出的黏著膠帶32之背面，並使該移動 輥33如箭號（細線及粗線所示的箭號）所示地邊旋轉移動而邊 將黏著膠帶32按壓在半導體元件3上之保護膠帶丨5上以使保 護膠帶15黏接在黏著膠帶32上，藉以自半導體元件3之主面 剥離保護膠帶1 5。 將膠帶捲出捲筒30與膠帶捲繞捲筒31配置成配線母基板 2a之長度以上，藉由自解開出之黏著膠帶32之上方邊使細 長的移動輥33，從配線母基板2a之左端朝向右端旋轉而邊 •17- 1283457 移動，即可使被覆各半導體元件3之主面的保護膠 黏會膠帶32之背面，且藉由使配線母基板2a下降指定古. 即可剝離貼附在半導體元件3上的保護膠帶15。θ疋阿度 在該剝離手段中’事錢黏著膠帶32之黏接力大於 體元件靖保護膠帶15的黏接力，並使保護膠帶⑸付著在黏 著膠帶32上以將保護膠帶15自半導體元件3剝離。
如圖9⑻所示，第二保護膠帶去除手段，係在準備具有與 配線母基板2a之各製品形成部12上的半導體元件3_應的 真空吸引噴嘴35之真空吸引治具36之後，將真空吸引噴嘴 35之前端對各半導體元件3上之保護膠帶15重覆如箭號⑽ 示地真空吸引並利用真空吸引噴嘴35保持保護膠帶15。之 後’使真空吸引治具36自配線母基板2a如箭號38所示地離 開以將保護膠帶15自半導體元件3之主面剝離（去除）。
在該剝離手段中，事先使真空吸引噴嘴35的真空吸引力 大於半導體元件3對保護膠帶15之黏接力，使真空吸引噴嘴 35吸引保護膠帶15以將保護膠帶15自半導體元件3剝離。 如圖9(c)所示，第三保護膠帶去除手段，係在固定於配線 母基板2a上之全部的半導體元件3之主面側的保護膠帶15 上，黏接1片黏著膠帶40,之後藉由使黏著膠帶4〇遠離配線 母基板2 a(半導體元件3)以將保護膠帶15自半導體元件3剥離 去除。亦即，事先使黏著膠帶40之黏接力大於半導體元件3 對保護膠帶15之黏接力’使保護膠帶丨5附著在黏著膠帶4〇 上以將保護膠帶15自半導體元件3剝離。 在使用紫外線照射硬化型膠帶以作為保護膠帶的情況， -18- 1283457 當將保護膠帶自半導體元件剝離時，使紫外線照射在保護 膠帶上使黏接力變弱之後進行保護膠帶之剝離。該剝離， 當然可使用上述三個剝離手段。 其次，利用導線性金屬線4來連接半導體元件3之未圖示 的電極與配線母基板2a之未圖示的配線（打線接合：si〇7)。 圖11及圖10係以金屬線4連接配線母基板以之配線與半導體 元件3之電極的模式俯視圖與模式剖視圖。 其次，在配線母基板2a之主面上形成絕緣性樹脂層“俾 於被覆半導m元件3及金屬線4(樹脂層形成：§ 1〇8)。圖η及 圖12係顯示在配線母基板2a之主面上形成絕緣性樹脂層兄 之狀態的配線母基板2a之模式剖視圖及模式俯視圖。 絕緣性樹脂層5a，係由轉移鑄模法之單面模所形成。絕 緣性樹脂層5a，係例如由環氧樹脂所形成。此時，選擇絕 緣性樹脂層5a之厚度以將半導體裝置丨之厚度形成在〇 5mm 以下。 其次，在配線母基板2a之背面形成凸塊電極（突起電 極）6(參照圖14 : S109)。凸塊電極6係形成於配線母基板2a 背面之未圖示的配線（電極）上。 其次，如圖14所示在配線母基板2a之主面上貼附支持框 44上所貼附的支持體（黏著膠帶）45，同時利用切割刀46沿著 製品形成邵之邊界，且自配線母基板2a並經過絕緣性樹脂 層5a而切斷至支持體45之中途深度為止並將各製品形成部 個片化以形成半導體裝置1 (S11 〇)。被分離的半導體裝置1係 呈貼附在支持體45上的狀態。因此，藉由將各半導體裝置1 1283457 自支持體45拆除（剝離）即可製造複數個如圖丨所示的 裝置1。 守把 由半導體裝置1之四角形狀所構成的基板2之各周面、及 對應該各周面的密封體5之各周面，由㈣利用切割刀來切 斷配線母基板2a及絕緣性樹脂層53所以係分別成為位於同 一平面的平坦面。 若依據本實施形態！則有如下效果。 (1) 晶圓3a之主面係由保護膠帶15所被覆。因而，在處理 :日圓時晶圓3a之主面就不易被污染、或損傷。χ，保護膠 π 15不僅可保護晶圓3a之主面亦可成為強度構件。結果， 在處理晶圓時就不易發生破裂、缺陷。此在依背面磨光而 •夂知更薄的晶圓3 a中就更有效果。 (2) 由於晶圓主面係由保護膠帶15所保護，所以依切割刀 8進行切斷時，不僅可防止表面污染，而且經切斷之邊緣 或半導體元件部之表面不易損傷。結果，不易發生半導體 兀件3之破裂、缺陷，且可提高半導體元件3之品質及製造 良率。 (3) 由於在切割步驟中，上述晶圓3a係形成與切割膠帶16 由保護膠帶15隔著的構造，且在該狀態下進行切割者，所 以不易因切割而發生半導體元件3之破裂缺陷（小碎片），同 寺半導組元件3不易翹曲。亦即，由於主面係由保護膠帶μ 所保護，且拾取貼附在切割膠帶16上的半導體元件3並固定 在配線母基板2a上，所以不易發生半導體元件3之破裂缺 陷，而可提高製造良車。 -20- 1283457 (4) 由於係利用透明的保護膠帶15來被覆晶圓从主面， 所以容易目視切割晶圓3a時的切割線，且可提高切割之作 業效率及切割良率。 · (5) 由於㈣後，半導體元件3亦可利用保護膠帶15來保護.· 主面，所以可防止表面污染或受傷。又，由則呆護膠帶15 可成為強度構件’所以即使在拾取時因頂起針以頂起、 或因吸具20之真空吸附保持、搬運及晶片固定方面，半導 體元件3亦不易損傷。 ⑹由於在形成絕緣性樹脂層5禮，係將配線母基板㈣ · 樹脂層-起切斷所以可同時製造多量的半導體裝置卜且可 減低半導體裝置1之製造成本。 ⑺由於半導體7^3係形成1〇()心以下，所以藉由減薄 樹脂層’即可將所製造的半導體裝们之厚度薄型化至05 mm以下。 、上雖係根據實施形態具體說明依本發明人所開發完成 的發明，但是本發明並非被限定於上述實施形態，只要$ 4 離八要曰之範圍内當然可作各種的變更。在實施形態 中’雖係就製品形成部上搭載單一半導體元件的例子加以 說明γ但是亦可適用於搭載複數個半導體元件的構成。 ： 若為要，亦可搭載晶片電容器或晶片電阻器等的被動 ： 零件。 另外雖係形成在基板背面設置凸塊電極的構造，但是 外部電極端子亦可為此外的構成。 (發明效果） -21 · 1283457
的效果，則可如下所述。 示之發明中作為其代表者所得 、缺陷所以可提高半導體裝 ⑴由於可防止薄晶圓之破裂、缺陷所以 置之製造良率。
減低半導體裝置之製造成本。 圖式簡單說明 <製造及半導體元件之搭載等 元件之破裂、缺陷發生所以可
實施形態（實施形態1)的半導體裝 置之製造方法所製造的半導體裝置之剖視圖。 圖2係顯示本實施形態1之半導體裝置之製造方法的流程 圖3係顯示在本實施形態1之半導體裝置之製造方法中， 於主面貼附保護膠帶之狀態的晶圓模式圖。 圖4係顯示在本實施形態丨之半導體裝置之製造方法中， 將經背面磨光之晶圓貼附於切割膠帶上之狀態的晶圓模式 _ 圖5係顯示在本實施形態1之半導體裝置之製造方法中， 將晶圓以切割刀進行切割之狀態的晶圓模式圖。 圖6(a)〜6(d)係顯示在本實施形態1之半導體裝置之製造方 去中’自切割膠帶拾取半導體元件並對配線母基板進行晶 片接合之狀態的模式圖。 圖7係顯示在本實施形態1之半導體裝置之製造方法中， 於配線母基板上整齊排列配置搭載半導體元件之狀態的模 -22- 1283457 式剖視圖。 裝置之製造方法中， 導體元件之狀態的模 圖8係顯示在本實施形態1之半導體 於配線母基板上整齊排列配置搭載半 式俯·視圖。
體裝置之製造方 予以去除之方法 的模式圖。 圖10係顯示在本實施形態1之半導體裝置之 利用金屬、在連接配線母基板之配線與半導體 之製造方法中， 體元件之電極之 狀態的模式剖視圖。 圖11係顯示在本實施形態1之半導體裝置之製造方法中， 利用金屬線連接配線母基板之配線與铸體元件之電極之 狀態的模式俯視圖。 圖12係顯不在本實施形態1之半導體裝置之製造方法中，
於配線母基板主面上形成絕緣性樹脂層之狀態的配線母基 板之模式剖視圖。 I 圖13係顯不在本實施形態1之半導體裝置之製造方法中， 於配線母基板主面上形成絕緣性樹脂層之狀態的配線母基 板之模式俯視圖。 t 圖14係顯示在本實施形態1之半導體裝置之製造方法中，： 切斷配線母基板與絕緣性樹脂層之狀態的模式剖視圖。 圖15係顯示早於本發明而先行檢討之半導體裝置的模式 剖視圖。 圖16係顯示早於本發明而先行檢討之半導體裝置之製造 -23- 1283457 法的流程圖。 式代表符號說明 1 半導體裝置 2 基板 2a 配線母基板 3 半導體元件 3a 半導體母基板（晶圓 4 金屬線 5 密封體 5a 絕緣性樹脂層 6 凸塊電極（突起電極） 11 框體部 12 製品形成部 15 保護膠帶 16 切割膠帶 17 支持框體 18 切割刀 20 吸具 21 頂起針
22 導件 30 膠帶捲出捲筒 31 膠帶捲繞捲筒 32 黏著膠帶 33 移動輥 -24- 1283457
35 真空吸引喷嘴 36 真空吸引治具 37、 38 箭號 40 黏著膠帶 45 支持體 46 切割刀 60 半導體裝置 61 基板 62 半導體元件 63 金屬線 64 密封體 65 凸塊電極（突起電極）
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Claims (1)

1283癌减! 04240號專利申請案 中文申請專利範圍替換本(95年2月）拾、申請專利範園： q修正 補充 m I Φ 9 本 案 修 後 是 否 變 更 康 實 質 内 容 Ο 一種半導體裝置之製造方法，特微^认^3 來製造半導體裝置，該步驟包含^徵在於利用以下步驟 分別準備半導體元件以縱 上的半導體母基板及製品 卩幻艰成於王面 & /成邵以縱橫方式整齊排列形 成於王面上的配線母基板； 在上述半導體母基板之主面全區上貼附保護膠帶； 將上述半導體母基板之背面去除指定厚度； 將上述半導體母基板介 /考面而貼附在切割膠帶上； 以保護膠帶覆蓋上述半導髀 | 卞子母基板疋主面，利用切割 刀沿著上述半導體元件乏彳喜w 仵《邊界，且自上述半導體母基板 之主面開始切斷至上述切割膠帶之中途深度為止以形成 複數個半導體元件； 、每次拾取-個上述切割膠帶上的上述半導體元件並將 之固定在上述各製品形成部上； 去除貼附在上述各半導體元件之主面上的上述保護膠 帶；
在上述各製品形成部上利用導電性之金屬線來連接上 述半導體元件之電極與上述配線母基板之配線； 以被覆上述半導體元件及上述金屬線的方式在上述配 線母基板之主面上形成絕緣性樹脂層； 在形成上述絕緣性樹脂層之後，在上述配線母基板背 面之配線上形成突起電極； 將上述半導體母基板介以上述絕緣性樹脂層之主面而 83779-950224.doc 1283457 貼附支持體； 利用切割刀沿著上述製品形成部之邊界，且自上述配 線母基板開始並經過上述絕緣性樹脂層而切斷至上述支 持to <中途深度為止以形成複數個半導體裝置；以及 從上述支持體分離各半導體裝置。 2。如申請專利範圍第丨項之半導體裝置之製造方法，其中 上述保護膠帶係一耐熱性且透明的黏著膠帶。 3·如申請專利範圍第i項之半導體裝置之製造方法，其中 上述保遵膠帶係一耐熱性之紫外線照射硬化型膠帶，其 係貼附在上述半導體母基板上，於去除前照射紫外線以 使黏著邵分硬化並使黏著性劣化者。 4.如申請專利g圍第1項之半導體裝置之製造方法，其中 將上述半導體母基板之背面去除指定厚度以形成厚度 1 〇 〇从m前後以下之厚度的半導體母基板。 5·如申清專利範圍第i項之半導體裝置之製造方法，其中 上述切割膠帶上之上述半導體元件的拾取，係利用從上 述切割膠帶之下方朝向上述半導體元件頂起的複數個頂 起針所進行的上述半導體元件之頂起、及對上述被頂起 的半導體元件進行真空吸附保持的真空吸附型吸 者。 6·如申請專利範圍第5項之半導體裝置之製造方法，其中 上述吸具係在吸附面上具有四角錐凹陷面的角錐吸且， 利用上述四角錐凹陷面來保持上述半導體元件，且：用 孩四角錐凹陷面來決定上述半導體元件之固定位置。 83779-950224.doc -2 - 1283457 7.如申請專利範圍第i項之半導體裝置之製造方法，其中 在貼附於上述各半導體元件之主面的上述保護膠帶上黏 接黏著膠帶之後，藉由使上述黏著膠帶遠離上述半導體 元件以將上述保護膠帶自上述半導體元件去除^ S 8’如申請專利範圍第7項之半導體裝置之製造方法，其中 在將自膠帶捲出捲軸解開出並捲繞在膠帶捲繞捲轴1的 黏著膠帶按壓在上述保護膠帶上以使黏著膠帶黏接上述 保護膠帶之後，使上述黏著膠帶自上述半導體元件相對 地離開以從上述半導體元件拆除上述保護膠帶。 9.如申請專利範圍第8項之半導體裝置之製造方法，其中 使自上述膠帶捲出捲#解開出的1述黏著膠帶之背面接 $移動輥，並邊使該移動輥旋轉移動而邊將上述黏著膠 帶按壓在上述半導體元件上以使上述保護膠帶黏接在上 述黏著膠帶上。 10·如申請專利範圍第7項之半導體裝置之製造方法，其中 在準備具有與上述配線母基板之各製品形成部上的上述 半導體7L件相對應的真空吸引噴嘴之真空吸引治具之 後，將上述真空吸引噴嘴之前端重覆真空吸引於上述各 半導fa元件上之上述保護膠帶上並利用上述真空吸引噴 嘴保持上述保護膠帶之後，使上述真空吸引治具自上述 配線母基板離開以去除上述保護膠帶。 Π·如申請專利範圍第i項之半導體裝置之製造方法，其中 選擇上述絕緣性樹脂層之厚度以製造厚度在〇 5111111以下 的半導體裝置。 83779-950224.doc 1283457 12.如申請專利範圍第1項之半導體裝置之製造方法，其中 在上述各製品形成部上固定複數個半導體元件。 83779-950224.doc 4-
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