CN102097340A - 用cob灌胶封装制作smd的方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
Abstract
本发明属芯片封装技术领域,尤其涉及一种用COB灌胶封装制作SMD的方法,它包括如下步骤:(1)芯片固晶,将芯片粘接在PCB上的指定位置;(2)金线绑定,将芯片与相应的PCB上的金属焊盘用金线键合进行电气连接;(3)注胶边框粘接,在功能区边沿用边框围住,以准备下一步的注胶操作;(4)注胶并固化,向边框区域内注入液态的EMC,注胶完毕后加热使EMC固化;(5)分离,将各个制品进行分离。本发明兼容性好,EMC封装无需特定模具,EMC注入工序作业简单,无需太高尺寸精度,封装后,制品表面平整度高。
Description
技术领域
本发明属芯片封装技术领域,尤其涉及一种用COB灌胶封装制作SMD的方法。
背景技术
用COB技术封装的裸芯片是芯片主体和I/O端子在晶体上方,在焊接时将此裸芯片用导电/导热胶粘接在PCB上,凝固后,用 Bonder 机将金属丝(Al或Au)在超声、热压的作用下,分别连接在芯片的I/O端子焊区和PCB相对应的焊盘上,测试合格后,再封上树脂胶。
现有技术COB灌装SMD产品,在具体工艺上大致存在两种情况:(1)采用自由形状点胶方式,这种方式是直接把液态的EMC点滴到PCB上芯片和金线的位置,依靠重力及EMC的表面张力来形成一个水滴状的EMC。采用这种方式,势必造成SMD成品的EMC表面呈现不规则形状;(2)封装后留有边框的方式,这种方式是每个制品都有一个边框,在边框中填注EMC,这种方式,因为边框最终是跟制品一体的,所以粘接边框是对机械精度要求很高而且因为注入EMC的数量较小,其表面有明显的凸面或凹面。
发明内容
本发明旨在克服现有技术的不足之处而提供一种兼容性好,EMC封装无需特定模具,EMC注入工序作业简单,无需太高尺寸精度,封装后,制品表面平整度高的用COB灌胶封装制作SMD的方法。
为达到上述目的,本发明是这样实现的。
一种用COB灌胶封装制作SMD的方法,它包括如下步骤:(1)芯片固晶,将芯片粘接在PCB上的指定位置;(2)金线绑定,将芯片与相应的PCB上的金属焊盘用金线键合进行电气连接;(3)注胶边框粘接,在功能区边沿用边框围住,以准备下一步的注胶操作;(4)注胶并固化,向边框区域内注入液态的EMC,注胶完毕后加热使EMC固化;(5)分离,将各个制品进行分离。
作为一种优选方案,本发明在步骤(3)中,注胶前使用填充物把PCB上的过孔塞住以防止胶液向背面渗漏。
作为另一种优选方案,本发明在步骤(5)中,使用划片机完成制品分离。
本发明兼容性好,EMC封装无需特定模具,EMC注入工序作业简单,无需太高尺寸精度,封装后,制品表面平整度高。
本发明因为边框的存在,能够形成一个十分规则的平面。另外,由于本发明的边框最终是要除掉的,所以对其粘接的机型精度要求较低,而其因为是多个制品区域作为一个整体来注胶的,一次注胶的量相对较大,最终胶液的表面能够较容易的控制其平整度。
附图说明
下面结合附图和具体实施方式对本发明作进一步说明。
图1为本发明的制成品整体结构示意图。
图2为本发明图1的仰视图。
图3为本发明分割作业工序示意图。
图中:1为EMC层;2为芯片;3为PCB层;4为焊盘;5为金线。
具体实施方式
参见图1~3,用COB灌胶封装制作SMD的方法,它包括如下步骤:(1)芯片固晶,将芯片粘接在PCB上的指定位置;(2)金线绑定,将芯片与相应的PCB上的金属焊盘用金线键合进行电气连接;(3)注胶边框粘接,在功能区边沿用边框围住,以准备下一步的注胶操作;注胶前使用填充物把PCB上的过孔塞住以防止胶液向背面渗漏;(4)注胶并固化,向边框区域内注入液态的EMC,注胶完毕后加热使EMC固化;(5)分离,使用划片机完成制品分离。
如图1所示,用COB灌胶封装方法制作SMD的成品,它包括EMC层1、芯片2、PCB层3及固接于PCB层3上的焊盘4;所述芯片2与PCB层3固定粘接;所述芯片2经金线5与焊盘4键合连接;所述EMC层1与PCB层固定封接;所述EMC层1的表面呈平面。
可以理解地是,以上关于本发明的具体描述,仅用于说明本发明而并非受限于本发明实施例所描述的技术方案,本领域的普通技术人员应当理解,仍然可以对本发明进行修改或等同替换,以达到相同的技术效果;只要满足使用需要,都在本发明的保护范围之内。
Claims (3)
1.一种用COB灌胶封装制作SMD的方法,其特征在于,包括如下步骤:
(1)芯片固晶,将芯片粘接在PCB上的指定位置;
(2)金线绑定,将芯片与相应的PCB上的金属焊盘用金线键合进行电气连接;
(3)注胶边框粘接,在功能区边沿用边框围住,以准备下一步的注胶操作;
(4)注胶并固化,向边框区域内注入液态的EMC,注胶完毕后加热使EMC固化;
(5)分离,将各个制品进行分离。
2.根据权利要求1所述的用COB灌胶封装制作SMD的方法,其特征在于:在步骤(3)中,注胶前使用填充物把PCB上的过孔塞住以防止胶液向背面渗漏。
3.根据权利要求2所述的用COB灌胶封装制作SMD的方法,其特征在于:在步骤(5)中,使用划片机完成制品分离。
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Cited By (5)
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CN103258934A (zh) * | 2012-04-09 | 2013-08-21 | 东莞市久祥电子有限公司 | 晶片型led线路板运用刷油墨防止封装过程溢胶的方法 |
CN105611750A (zh) * | 2015-12-21 | 2016-05-25 | 台州市日昌晶灯饰有限公司 | 彩灯控制电路板的制作工艺 |
CN108090267A (zh) * | 2017-12-11 | 2018-05-29 | 广州全界通讯科技有限公司 | 一种pcb版图结构 |
CN109659241A (zh) * | 2018-12-11 | 2019-04-19 | 沈阳中光电子有限公司 | 一种在引线框架上连接两种类型芯片的方法 |
CN114326192A (zh) * | 2021-12-29 | 2022-04-12 | 深圳市晶惠迪电子有限公司 | 一种宽视角fstn cog液晶显示屏的制作方法 |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103258934A (zh) * | 2012-04-09 | 2013-08-21 | 东莞市久祥电子有限公司 | 晶片型led线路板运用刷油墨防止封装过程溢胶的方法 |
CN103258934B (zh) * | 2012-04-09 | 2017-03-22 | 东莞市久祥电子有限公司 | 晶片型led线路板运用刷油墨防止封装过程溢胶的方法 |
CN105611750A (zh) * | 2015-12-21 | 2016-05-25 | 台州市日昌晶灯饰有限公司 | 彩灯控制电路板的制作工艺 |
CN108090267A (zh) * | 2017-12-11 | 2018-05-29 | 广州全界通讯科技有限公司 | 一种pcb版图结构 |
CN108090267B (zh) * | 2017-12-11 | 2022-02-11 | 广州全界通讯科技有限公司 | 一种pcb版图结构 |
CN109659241A (zh) * | 2018-12-11 | 2019-04-19 | 沈阳中光电子有限公司 | 一种在引线框架上连接两种类型芯片的方法 |
CN109659241B (zh) * | 2018-12-11 | 2021-05-11 | 沈阳中光电子有限公司 | 一种在引线框架上连接两种类型芯片的方法 |
CN114326192A (zh) * | 2021-12-29 | 2022-04-12 | 深圳市晶惠迪电子有限公司 | 一种宽视角fstn cog液晶显示屏的制作方法 |
CN114326192B (zh) * | 2021-12-29 | 2023-06-30 | 深圳市晶惠迪电子有限公司 | 一种宽视角fstn cog液晶显示屏的制作方法 |
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Application publication date: 20110615 |