CN1094254C - 半导体芯片注胶方法 - Google Patents

半导体芯片注胶方法 Download PDF

Info

Publication number
CN1094254C
CN1094254C CN981034063A CN98103406A CN1094254C CN 1094254 C CN1094254 C CN 1094254C CN 981034063 A CN981034063 A CN 981034063A CN 98103406 A CN98103406 A CN 98103406A CN 1094254 C CN1094254 C CN 1094254C
Authority
CN
China
Prior art keywords
welding
colloid
injecting glue
resistant colloid
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN981034063A
Other languages
English (en)
Other versions
CN1219762A (zh
Inventor
谢文乐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HUATAI ELECTRONICS CO Ltd
Original Assignee
HUATAI ELECTRONICS CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HUATAI ELECTRONICS CO Ltd filed Critical HUATAI ELECTRONICS CO Ltd
Publication of CN1219762A publication Critical patent/CN1219762A/zh
Application granted granted Critical
Publication of CN1094254C publication Critical patent/CN1094254C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67138—Apparatus for wiring semiconductor or solid state device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

一种半导体芯片注胶方法，它包括以下步骤：a.将芯片粘着在PCB上并进行打线；b.在芯片边角粘贴防焊胶体；c.沿着防焊胶体注改后卸载防焊胶体；d.进行盖印、植球、去框；半导体芯片的PCB板上贴设防焊胶体；防焊胶体在封胶后卸载；本发明的防焊胶体具有防焊耐高压耐高温，浮贴在PCB板上，经由芯片边角注胶后，可取下浮贴的防焊胶体；本发明的防焊胶体可代替注入口，容易卸除，因此简化了生产，降低了成本，可耐高温作业，避免或减少发生短路或断路的故障。

Description

半导体芯片注胶方法
技术领域
本发明涉及一种可耐高温作业的半导体芯片注胶方法。
背景技术
目前，半导体的芯片在注胶时，在外框顶部采用镀金铜箔，切割时需要去除镀金铜箔的注入口，生产成本较高，制作复杂，并且在高温作业时半导体芯片电路容易发生短路，造成故障。
发明内容
本发明的目的在于提供一种半导体芯片注胶方法，其生产成本较低，制造容易，可耐高温作业半导体注胶。
本发明的目的是这样实现的：一种半导体芯片注胶方法，它包括以下步：
a.将芯片粘着在PCB上并进行打线；
b.在芯片边角粘贴防焊胶体；
c.沿着防焊胶体注胶后卸载防焊胶体；
d.进行盖印、植球、去框。
一种半导体芯片注胶方法，它包括以下步骤：
a.在PCB上粘贴防焊胶体；
b.将芯片粘着在防焊胶体中央并进行打线；
c.沿着芯片边角注胶后卸载防焊胶体；
d.进行盖印、植球、去框。
半导体芯片的PCB板上贴设防焊胶体。
防焊胶体在封胶后卸载。
本发明的两种方法使用的防焊胶体具有防焊耐高压耐高温，浮贴在PCB板上，经由芯片边角注胶后，可取下浮贴的防焊胶体。本发明的防焊胶体可代替注入口，容易卸除，因此简化了生产，降低了成本，可耐高温作业，避免或减少发生短路或断路的故障。
附图说明
下面结合附图和具体实施方案对本发明做进一步的详细说明。
图1为本发明的一种实施例示意图；
图2为本发明的另一种实施例示意图。
具体实施方式
参见图1、2，为本发明的注胶作业采用注胶方法1及方法2的粘着防焊胶带示意图。
本发明方法1有4个步骤。
1、将芯片粘着在PCB上并进行打线；
2、在芯片边角粘贴防焊胶体；
3、沿着防焊胶体注胶后卸载防焊胶体；
4、进行盖印、植球、去框。
本发明方法2有4个步骤。
1、在PCB上粘贴防焊胶体；
2、将芯片粘着在防焊胶体中央并进行打线；
3、沿着芯片边角注胶后卸载防焊胶体；
4、进行盖印、植球、去框。
采用方法1的半导体注胶作业粘着防焊胶体为防焊胶带。防焊胶带形状为半导体芯片的注入口形成漏斗形状，方便注入，经由封装完后可以取卸。
芯片粘着后打线，在芯片11的边角接线浮贴防焊胶带13，胶注入口12与胶道相连接，沿着防焊胶带注入固定胶，且施与芯片封胶后，去除防焊胶带，在盖印、植球、去框边胶带胶膜。
采用方法2的半导体注胶作业粘着防焊胶体为防焊胶片。防焊胶片形状为“回”字形，中间去除部分，方便半导体芯片放入，塑胶由“回”字形的外围注入。
“回”字形防焊胶片先设定好中间芯片的面积大小，粘着防焊胶片21后，粘着芯片、打线，由与胶道相接的注入进口22注入液体胶，施与芯片封胶，再去除防焊胶膜后，封胶平面上盖印，标示编号规格代号，再予植球，去除框边胶带胶膜。

Claims (2)

1、一种半导体芯片注胶方法，其特征在于：它包括以下步骤：a.将芯片粘着在PCB上并进行打线；b.在芯片边角粘贴防焊胶体：c.沿着防焊胶体注胶后卸载防焊胶体；d.进行盖印、植球、去框。
2、一种半导体芯片注胶方法，其特征在于：它包括以下步骤：a.在PCB上粘贴防焊胶体；b.将芯片粘着在防焊胶体中央并进行打线；c.沿着芯片边角注胶后卸载防焊胶体；d.进行盖印、植球、去框。
CN981034063A 1997-12-09 1998-07-22 半导体芯片注胶方法 Expired - Fee Related CN1094254C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/987,483 1997-12-09
US08/987,483 US6033934A (en) 1997-12-09 1997-12-09 Semiconductor chip fabrication method and apparatus therefor

Publications (2)

Publication Number Publication Date
CN1219762A CN1219762A (zh) 1999-06-16
CN1094254C true CN1094254C (zh) 2002-11-13

Family

ID=25533301

Family Applications (1)

Application Number Title Priority Date Filing Date
CN981034063A Expired - Fee Related CN1094254C (zh) 1997-12-09 1998-07-22 半导体芯片注胶方法

Country Status (2)

Country Link
US (1) US6033934A (zh)
CN (1) CN1094254C (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102097340A (zh) * 2010-12-14 2011-06-15 沈阳中光电子有限公司 用cob灌胶封装制作smd的方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6372539B1 (en) * 2000-03-20 2002-04-16 National Semiconductor Corporation Leadless packaging process using a conductive substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5026669A (en) * 1986-10-13 1991-06-25 Mitsubishi Denki Kabushiki Kaisha Method of eliminating burrs on a lead frame with a thin metal coating
US5661086A (en) * 1995-03-28 1997-08-26 Mitsui High-Tec, Inc. Process for manufacturing a plurality of strip lead frame semiconductor devices

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3151346B2 (ja) * 1993-12-10 2001-04-03 株式会社日立製作所 半導体集積回路装置およびその製造方法ならびにその製造に用いるモールド金型
NL1003315C2 (nl) * 1996-06-11 1997-12-17 Europ Semiconductor Assembly E Werkwijze voor het inkapselen van een geïntegreerde halfgeleiderschake- ling.
JP3870301B2 (ja) * 1996-06-11 2007-01-17 ヤマハ株式会社 半導体装置の組立法、半導体装置及び半導体装置の連続組立システム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5026669A (en) * 1986-10-13 1991-06-25 Mitsubishi Denki Kabushiki Kaisha Method of eliminating burrs on a lead frame with a thin metal coating
US5661086A (en) * 1995-03-28 1997-08-26 Mitsui High-Tec, Inc. Process for manufacturing a plurality of strip lead frame semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102097340A (zh) * 2010-12-14 2011-06-15 沈阳中光电子有限公司 用cob灌胶封装制作smd的方法

Also Published As

Publication number Publication date
CN1219762A (zh) 1999-06-16
US6033934A (en) 2000-03-07

Similar Documents

Publication Publication Date Title
CN1191550C (zh) 信息记录标签
DE60008093D1 (de) Verfahren zur herstellung von eingebetteten elektronischen bauteilen
KR100434002B1 (ko) 액정 장치의 제조 방법
CN1094254C (zh) 半导体芯片注胶方法
KR100868616B1 (ko) 반도체(플립 칩) 실장 부품과 그 제조 방법
JP2001215891A (ja) フラットディスプレイパネルの製造方法
CN109346588B (zh) 深紫外led封装工艺以及水杀菌模块的制作工艺
JP2544523B2 (ja) 電子部品の取り外し方法
JPH02209739A (ja) 半導体装置の製造方法
JP4257807B2 (ja) 電子部品の製造方法
JP2009252778A (ja) 半導体パッケージの製造方法
JPH05313178A (ja) パネルの実装方法および実装構造
CN108831839B (zh) 一种去除半导体塑封制程中所产生毛边的方法
CN1185696C (zh) 存储器封装工艺方法
CN102344109A (zh) 封装结构及其制造方法
JP3096192B2 (ja) Ｉｃの実装構造および液晶ディスプレイ駆動用ｉｃの実装方法
US6782612B2 (en) Manufacturing process of IC module
EP0398642A1 (en) Liquid crystal display and manufacturing method
JP3041980B2 (ja) 液晶パネル及び液晶パネルの製造方法
CN115985785A (zh) 一种芯片封装的制造方法
JPS62280887A (ja) リ−ド群の接続方法
JPH07175077A (ja) 液晶表示素子の構造及びその製造方法
JP2891236B2 (ja) テープキャリアパッケージ
JPH09246715A (ja) 電子部品実装方法
JPS63316827A (ja) 液晶表示素子の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee