TWI266383B - Copper electrodeposition in microelectronics - Google Patents

Copper electrodeposition in microelectronics

Info

Publication number
TWI266383B
TWI266383B TW093138976A TW93138976A TWI266383B TW I266383 B TWI266383 B TW I266383B TW 093138976 A TW093138976 A TW 093138976A TW 93138976 A TW93138976 A TW 93138976A TW I266383 B TWI266383 B TW I266383B
Authority
TW
Taiwan
Prior art keywords
microelectronics
copper electrodeposition
electroplating
leveling
ions
Prior art date
Application number
TW093138976A
Other languages
English (en)
Chinese (zh)
Other versions
TW200525695A (en
Inventor
Vincent Paneccasio
Xuan Lin
Paul Figura
Richard W Hurtubise
Original Assignee
Enthone
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enthone filed Critical Enthone
Publication of TW200525695A publication Critical patent/TW200525695A/zh
Application granted granted Critical
Publication of TWI266383B publication Critical patent/TWI266383B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Electrolytic Production Of Metals (AREA)
TW093138976A 2003-12-22 2004-12-15 Copper electrodeposition in microelectronics TWI266383B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US53177103P 2003-12-22 2003-12-22
US10/963,369 US8002962B2 (en) 2002-03-05 2004-10-12 Copper electrodeposition in microelectronics

Publications (2)

Publication Number Publication Date
TW200525695A TW200525695A (en) 2005-08-01
TWI266383B true TWI266383B (en) 2006-11-11

Family

ID=34752972

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093138976A TWI266383B (en) 2003-12-22 2004-12-15 Copper electrodeposition in microelectronics

Country Status (7)

Country Link
US (4) US8002962B2 (enExample)
EP (1) EP1697561B1 (enExample)
JP (1) JP4539925B2 (enExample)
KR (1) KR101157284B1 (enExample)
PT (1) PT1697561T (enExample)
TW (1) TWI266383B (enExample)
WO (1) WO2005066391A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI853334B (zh) * 2022-01-21 2024-08-21 南韓商東友精細化工有限公司 用於鍍銅的組合物和使用該組合物製造含銅導體的方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI853334B (zh) * 2022-01-21 2024-08-21 南韓商東友精細化工有限公司 用於鍍銅的組合物和使用該組合物製造含銅導體的方法

Also Published As

Publication number Publication date
US8608933B2 (en) 2013-12-17
US8002962B2 (en) 2011-08-23
US9493884B2 (en) 2016-11-15
KR20060127067A (ko) 2006-12-11
EP1697561A4 (en) 2008-05-21
PT1697561T (pt) 2018-10-19
US20050045488A1 (en) 2005-03-03
US20170029972A1 (en) 2017-02-02
EP1697561A1 (en) 2006-09-06
JP4539925B2 (ja) 2010-09-08
EP1697561B1 (en) 2018-07-18
JP2007517140A (ja) 2007-06-28
TW200525695A (en) 2005-08-01
US20120043218A1 (en) 2012-02-23
KR101157284B1 (ko) 2012-07-06
US20140102909A1 (en) 2014-04-17
WO2005066391A1 (en) 2005-07-21

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