WO2008142770A1 - 電気銅めっき浴 - Google Patents

電気銅めっき浴 Download PDF

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Publication number
WO2008142770A1
WO2008142770A1 PCT/JP2007/060364 JP2007060364W WO2008142770A1 WO 2008142770 A1 WO2008142770 A1 WO 2008142770A1 JP 2007060364 W JP2007060364 W JP 2007060364W WO 2008142770 A1 WO2008142770 A1 WO 2008142770A1
Authority
WO
WIPO (PCT)
Prior art keywords
copper electroplating
electroplating bath
leveller
water
holes
Prior art date
Application number
PCT/JP2007/060364
Other languages
English (en)
French (fr)
Inventor
Toshihisa Isono
Shinji Tachibana
Tomohiro Kawase
Naoyuki Omura
Original Assignee
C. Uyemura & Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by C. Uyemura & Co., Ltd. filed Critical C. Uyemura & Co., Ltd.
Priority to CN2007800530449A priority Critical patent/CN101796221B/zh
Priority to US12/599,436 priority patent/US8679317B2/en
Priority to TW096117961A priority patent/TWI441955B/zh
Priority to EP07743798A priority patent/EP2161355A4/en
Priority to KR1020097025134A priority patent/KR101417986B1/ko
Priority to PCT/JP2007/060364 priority patent/WO2008142770A1/ja
Publication of WO2008142770A1 publication Critical patent/WO2008142770A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
    • H05K3/424—Plated through-holes or plated via connections characterised by electroplating method by direct electroplating

Abstract

　基板上に形成された未貫通穴を銅で充填するために用いる電気銅めっき浴であって、水溶性銅塩、硫酸、塩化物イオン及び添加剤としてブライトナー、キャリアー及びレベラーを含有し、上記レベラーが、溶液中でカチオン化する４級窒素、３級窒素又はそれら両方を含有する水溶性ポリマーを１種以上含む電気銅めっき浴。 　基板上に形成された未貫通穴を銅めっきにより充填するための電気銅めっき浴の銅めっき充填性を、レベラーである水溶性ポリマーの４級窒素と３級窒素との比率を変更するだけで、未貫通穴のサイズに合わせて簡便に調整でき、様々なサイズの未貫通穴に合わせて電気銅めっきすることができる。
PCT/JP2007/060364 2007-05-21 2007-05-21 電気銅めっき浴 WO2008142770A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CN2007800530449A CN101796221B (zh) 2007-05-21 2007-05-21 铜电镀浴
US12/599,436 US8679317B2 (en) 2007-05-21 2007-05-21 Copper electroplating bath
TW096117961A TWI441955B (zh) 2007-05-21 2007-05-21 Electroplating copper bath
EP07743798A EP2161355A4 (en) 2007-05-21 2007-05-21 ELECTROLYTIC COPPER BATH
KR1020097025134A KR101417986B1 (ko) 2007-05-21 2007-05-21 전기 구리 도금욕
PCT/JP2007/060364 WO2008142770A1 (ja) 2007-05-21 2007-05-21 電気銅めっき浴

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/060364 WO2008142770A1 (ja) 2007-05-21 2007-05-21 電気銅めっき浴

Publications (1)

Publication Number Publication Date
WO2008142770A1 true WO2008142770A1 (ja) 2008-11-27

Family

ID=40031497

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/060364 WO2008142770A1 (ja) 2007-05-21 2007-05-21 電気銅めっき浴

Country Status (6)

Country Link
US (1) US8679317B2 (ja)
EP (1) EP2161355A4 (ja)
KR (1) KR101417986B1 (ja)
CN (1) CN101796221B (ja)
TW (1) TWI441955B (ja)
WO (1) WO2008142770A1 (ja)

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Publication number Priority date Publication date Assignee Title
US7888784B2 (en) * 2008-09-30 2011-02-15 Intel Corporation Substrate package with through holes for high speed I/O flex cable
JP5637671B2 (ja) * 2009-09-16 2014-12-10 上村工業株式会社 電気銅めっき浴及びその電気銅めっき浴を用いた電気めっき方法
JP6031319B2 (ja) * 2012-10-04 2016-11-24 ローム・アンド・ハース電子材料株式会社 電解銅めっき液及び電解銅めっき方法
KR20140092626A (ko) * 2013-01-16 2014-07-24 삼성전자주식회사 구리 전해 도금액, 구리 도금 장치 및 이를 이용한 구리 범프 형성 방법
CN103060860B (zh) * 2013-01-22 2016-01-20 中南大学 一种印制线路板酸性镀铜电镀液及其制备和应用方法
CN104470260B (zh) * 2013-09-13 2018-03-06 珠海方正科技高密电子有限公司 盲孔电镀填孔方法和电路板
CN103572336B (zh) * 2013-11-20 2016-06-22 东莞市富默克化工有限公司 一种pcb盲孔电镀铜溶液及其制备方法和电镀方法
CN103732011B (zh) * 2013-12-24 2016-06-08 广州兴森快捷电路科技有限公司 印制线路板盲孔的制作方法
JP6509635B2 (ja) * 2015-05-29 2019-05-08 東芝メモリ株式会社 半導体装置、及び、半導体装置の製造方法
US10100420B2 (en) 2015-12-29 2018-10-16 Hong Kong Applied Science and Technology Research Institute Company Limtied Plating leveler for electrodeposition of copper pillar
KR20180086073A (ko) * 2017-01-20 2018-07-30 삼성전기주식회사 기판 도금용 조성물 및 이를 이용한 도금 방법
CN109920798B (zh) * 2019-02-01 2021-04-09 云谷（固安）科技有限公司 阵列基板及其制作方法和显示面板
TWI816388B (zh) * 2021-05-17 2023-09-21 美商麥克達米德恩索龍股份有限公司 在印刷電路板或其它基板上填充穿孔的單步電解法

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JPS57114685A (en) * 1981-01-07 1982-07-16 Kuraray Co Ltd Brightener for plating bath
JP2001073182A (ja) * 1999-07-15 2001-03-21 Boc Group Inc:The 改良された酸性銅電気メッキ用溶液
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JP2005029818A (ja) * 2003-07-09 2005-02-03 Ebara Corp めっき方法
JP2006057177A (ja) * 2004-07-23 2006-03-02 C Uyemura & Co Ltd 電気銅めっき浴及び電気銅めっき方法
JP2007138265A (ja) * 2005-11-21 2007-06-07 C Uyemura & Co Ltd 電気銅めっき浴

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57114685A (en) * 1981-01-07 1982-07-16 Kuraray Co Ltd Brightener for plating bath
JP2001073182A (ja) * 1999-07-15 2001-03-21 Boc Group Inc:The 改良された酸性銅電気メッキ用溶液
JP2004068088A (ja) * 2002-08-07 2004-03-04 C Uyemura & Co Ltd 硫酸銅めっき浴及び電気銅めっき方法
JP2005029818A (ja) * 2003-07-09 2005-02-03 Ebara Corp めっき方法
JP2006057177A (ja) * 2004-07-23 2006-03-02 C Uyemura & Co Ltd 電気銅めっき浴及び電気銅めっき方法
JP2007138265A (ja) * 2005-11-21 2007-06-07 C Uyemura & Co Ltd 電気銅めっき浴

Also Published As

Publication number Publication date
KR20100017562A (ko) 2010-02-16
KR101417986B1 (ko) 2014-07-09
TW200846506A (en) 2008-12-01
TWI441955B (zh) 2014-06-21
EP2161355A1 (en) 2010-03-10
EP2161355A4 (en) 2012-01-25
US8679317B2 (en) 2014-03-25
CN101796221A (zh) 2010-08-04
CN101796221B (zh) 2012-07-04
US20100219081A1 (en) 2010-09-02

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