TWI265172B - and method for forming the same Composition for forming insulating film, method for producing the same, silica-based insulating film - Google Patents

and method for forming the same Composition for forming insulating film, method for producing the same, silica-based insulating film

Info

Publication number
TWI265172B
TWI265172B TW094101152A TW94101152A TWI265172B TW I265172 B TWI265172 B TW I265172B TW 094101152 A TW094101152 A TW 094101152A TW 94101152 A TW94101152 A TW 94101152A TW I265172 B TWI265172 B TW I265172B
Authority
TW
Taiwan
Prior art keywords
forming
insulating film
silica
producing
group
Prior art date
Application number
TW094101152A
Other languages
English (en)
Chinese (zh)
Other versions
TW200538490A (en
Inventor
Hisashi Nakagawa
Masahiro Akiyama
Takahiko Kurosawa
Atsushi Shiota
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW200538490A publication Critical patent/TW200538490A/zh
Application granted granted Critical
Publication of TWI265172B publication Critical patent/TWI265172B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/20—Manufacture of shaped structures of ion-exchange resins
    • C08J5/22—Films, membranes or diaphragms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/14—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Medicinal Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Manufacturing & Machinery (AREA)
  • Silicon Polymers (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Organic Insulating Materials (AREA)
TW094101152A 2004-01-16 2005-01-14 and method for forming the same Composition for forming insulating film, method for producing the same, silica-based insulating film TWI265172B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004009205 2004-01-16

Publications (2)

Publication Number Publication Date
TW200538490A TW200538490A (en) 2005-12-01
TWI265172B true TWI265172B (en) 2006-11-01

Family

ID=34792263

Family Applications (2)

Application Number Title Priority Date Filing Date
TW094101152A TWI265172B (en) 2004-01-16 2005-01-14 and method for forming the same Composition for forming insulating film, method for producing the same, silica-based insulating film
TW094101151A TW200536621A (en) 2004-01-16 2005-01-14 Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW094101151A TW200536621A (en) 2004-01-16 2005-01-14 Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film

Country Status (6)

Country Link
US (2) US20070015892A1 (enExample)
EP (2) EP1705207B1 (enExample)
JP (2) JP5013045B2 (enExample)
KR (2) KR20060123549A (enExample)
TW (2) TWI265172B (enExample)
WO (2) WO2005068538A1 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005068540A1 (ja) * 2004-01-16 2005-07-28 Jsr Corporation 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法
EP1705207B1 (en) * 2004-01-16 2012-10-24 JSR Corporation Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film
WO2005082976A1 (ja) * 2004-02-26 2005-09-09 Jsr Corporation ポリマーおよびその製造方法、絶縁膜形成用組成物、ならびに絶縁膜およびその形成方法
KR101140535B1 (ko) * 2004-05-11 2012-05-02 제이에스알 가부시끼가이샤 유기 실리카계 막의 형성 방법, 유기 실리카계 막, 배선구조체, 반도체 장치 및 막 형성용 조성물
JP5110239B2 (ja) * 2004-05-11 2012-12-26 Ｊｓｒ株式会社 有機シリカ系膜の形成方法、膜形成用組成物
JP5110238B2 (ja) * 2004-05-11 2012-12-26 Ｊｓｒ株式会社 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法
US7790630B2 (en) * 2005-04-12 2010-09-07 Intel Corporation Silicon-doped carbon dielectrics
JP2007045966A (ja) * 2005-08-11 2007-02-22 Fujifilm Corp 絶縁膜形成用組成物、絶縁膜、およびその製造方法
US8017700B2 (en) * 2005-11-11 2011-09-13 Jsr Corporation Polycarbosilane, method for producing same, silica composition for coating application, and silica film
US7714092B2 (en) * 2006-01-13 2010-05-11 Starfire Systems, Inc. Composition, preparation of polycarbosilanes and their uses
EP1981074B1 (en) 2006-02-02 2011-06-22 JSR Corporation Organic silica film and method for forming same, composition for forming insulating film of semiconductor device and method for producing same, wiring structure and semiconductor device
JP5007511B2 (ja) * 2006-02-14 2012-08-22 富士通株式会社 露光光遮蔽膜形成用材料、多層配線及びその製造方法、並びに半導体装置
JP5423937B2 (ja) * 2006-03-23 2014-02-19 Ｊｓｒ株式会社 絶縁膜形成用組成物の製造方法、ポリマーの製造方法
WO2007119554A1 (ja) * 2006-03-29 2007-10-25 Jsr Corporation ポリマーの製造方法、ポリマー、ポリマー膜形成用組成物、ポリマー膜の形成方法およびポリマー膜
JP4877486B2 (ja) * 2006-05-31 2012-02-15 Ｊｓｒ株式会社 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法
WO2008096656A1 (ja) * 2007-02-07 2008-08-14 Jsr Corporation ケイ素含有ポリマーおよびその合成方法、膜形成用組成物、ならびにシリカ系膜およびその形成方法
CN101611043B (zh) * 2007-02-14 2013-03-13 Jsr株式会社 含硅膜形成用材料、以及含硅绝缘膜及其形成方法
WO2008114309A1 (ja) * 2007-03-16 2008-09-25 Fujitsu Limited シリコン系絶縁膜のエッチング後処理剤、半導体装置の製造方法および半導体装置
US8026035B2 (en) * 2007-03-30 2011-09-27 Cheil Industries, Inc. Etch-resistant disilane and saturated hydrocarbon bridged silicon-containing polymers, method of making the same, and method of using the same
WO2009008424A1 (ja) * 2007-07-10 2009-01-15 Jsr Corporation ケイ素化合物の製造方法
JP5348373B2 (ja) * 2008-05-29 2013-11-20 Ｊｓｒ株式会社 ポリカルボシランの製造方法
JP5365785B2 (ja) * 2008-05-30 2013-12-11 Ｊｓｒ株式会社 有機ケイ素化合物の製造方法
JP5376118B2 (ja) * 2008-10-29 2013-12-25 Ｊｓｒ株式会社 絶縁膜形成用組成物の製造方法、ならびに絶縁膜の形成方法
JP4379637B1 (ja) 2009-03-30 2009-12-09 Ｊｓｒ株式会社 有機ケイ素化合物の製造方法
TWI785070B (zh) * 2017-07-31 2022-12-01 美商陶氏有機矽公司 聚矽氧樹脂、相關方法、以及由其形成的膜
KR102444014B1 (ko) * 2019-02-05 2022-09-15 가부시키가이샤 도쿠야마 실리콘 에칭액 및 상기 에칭액을 이용한 실리콘 디바이스의 제조방법
CN112094414B (zh) * 2020-09-24 2022-01-07 宁波曙翔新材料股份有限公司 一种新型液态碳化硅陶瓷先驱体的制备方法

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5461299A (en) * 1977-10-26 1979-05-17 Tokushiyu Muki Zairiyou Kenkiy Polycarbosilane partially containing siloxane linkage and method of making same
GB2009196B (en) * 1977-10-26 1982-04-15 Res Inst For Special Inorganic Polycarbosilane process for its prudiction and its use as material for producing silicon carbide
JPS5872923A (ja) * 1981-10-28 1983-05-02 Hitachi Ltd 液晶表示素子
JPS6169836A (ja) * 1984-09-12 1986-04-10 Chisso Corp けい素含有ステツプラダ−ポリマ−及びその製造方法
DE3841348A1 (de) * 1988-12-08 1990-06-13 Kali Chemie Ag Verfahren zur herstellung von polycarbosilanen und neue polycarbosilane
US5202405A (en) * 1990-08-27 1993-04-13 E. I. Du Pont De Nemours And Company Silicon carbide precursors
JP2712817B2 (ja) * 1990-11-15 1998-02-16 信越化学工業株式会社 ポリオルガノシロキサン樹脂の製造方法
JPH05105761A (ja) * 1991-09-30 1993-04-27 Kanegafuchi Chem Ind Co Ltd ケイ素系ハイブリツド材料
JPH05105739A (ja) 1991-10-16 1993-04-27 Nippon Steel Chem Co Ltd 半導体封止用樹脂組成物
JP3296440B2 (ja) * 1991-10-17 2002-07-02 鐘淵化学工業株式会社 ケイ素系ハイブリッド材料
JP3320440B2 (ja) 1992-03-17 2002-09-03 触媒化成工業株式会社 被膜形成用塗布液およびその製造方法
JP3073313B2 (ja) 1992-05-12 2000-08-07 触媒化成工業株式会社 半導体装置およびその製造方法
US5623030A (en) * 1994-12-01 1997-04-22 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Curable composition and process for producing molded articles using the same
JPH08217879A (ja) * 1995-02-15 1996-08-27 Mitsubishi Rayon Co Ltd 耐熱性樹脂およびその製造方法
JP4473352B2 (ja) 1998-05-26 2010-06-02 東京応化工業株式会社 低比誘電率シリカ系被膜、それを形成するための塗布液、その塗布液の調製方法
JPH11340220A (ja) 1998-05-26 1999-12-10 Tokyo Ohka Kogyo Co Ltd シリカ系被膜形成用塗布液及びその製造方法
JP4305587B2 (ja) * 1999-04-27 2009-07-29 Ｊｓｒ株式会社 半導体装置用の層間絶縁膜形成用材料
JP2000319588A (ja) * 1999-05-10 2000-11-21 Sony Corp 熱吸収膜用塗料、熱吸収膜およびカラー陰極線管
JP4756526B2 (ja) * 1999-10-25 2011-08-24 富士通株式会社 多孔質化低誘電率絶縁膜の形成方法及び該方法で形成された多孔質化低誘電率絶縁膜及び該多孔質化低誘電率絶縁膜を用いた半導体装置
JP3941327B2 (ja) * 2000-02-01 2007-07-04 Ｊｓｒ株式会社 シリカ系膜の製造方法、シリカ系膜、絶縁膜および半導体装置
JP3604007B2 (ja) * 2000-03-29 2004-12-22 富士通株式会社 低誘電率被膜形成材料、及びそれを用いた被膜と半導体装置の製造方法
JP4117436B2 (ja) * 2000-04-10 2008-07-16 Ｊｓｒ株式会社 膜形成用組成物、膜の形成方法およびシリカ系膜
JP4507377B2 (ja) * 2000-09-25 2010-07-21 Ｊｓｒ株式会社 ケイ素ポリマー、膜形成用組成物および絶縁膜形成用材料
JP4545973B2 (ja) * 2001-03-23 2010-09-15 富士通株式会社 シリコン系組成物、低誘電率膜、半導体装置および低誘電率膜の製造方法
KR100451044B1 (ko) * 2001-06-07 2004-10-02 주식회사 엘지화학 유기실리케이트 중합체의 제조방법, 및 이를 이용한절연막의 제조방법
JP2003115482A (ja) 2001-10-05 2003-04-18 Asahi Kasei Corp 絶縁膜形成用組成物
EP1500685A4 (en) * 2002-04-12 2007-02-21 Az Electronic Materials Usa COMPOSITION OF SILICONE-CONTAINING COPOLYMER, SOLUBLE-SOLUBLE SILICONE-CONTAINING COPOLYMER SOLVED IN SOLVENT AND HARDENED OBJECTS OBTAINED THEREFROM
US6844568B2 (en) * 2002-04-25 2005-01-18 Kyocera Corporation Photoelectric conversion device and manufacturing process thereof
US6809041B2 (en) 2002-07-01 2004-10-26 Rensselaer Polytechnic Institute Low dielectric constant films derived by sol-gel processing of a hyperbranched polycarbosilane
KR20050024721A (ko) * 2003-09-01 2005-03-11 삼성전자주식회사 신규 실록산계 수지 및 이를 이용한 반도체 층간 절연막
US7462678B2 (en) * 2003-09-25 2008-12-09 Jsr Corporation Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film
JP4737361B2 (ja) * 2003-12-19 2011-07-27 Ｊｓｒ株式会社 絶縁膜およびその形成方法
EP1705207B1 (en) 2004-01-16 2012-10-24 JSR Corporation Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film
WO2005068540A1 (ja) * 2004-01-16 2005-07-28 Jsr Corporation 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法
EP1615260A3 (en) * 2004-07-09 2009-09-16 JSR Corporation Organic silicon-oxide-based film, composition and method for forming the same, and semiconductor device
JP4355939B2 (ja) * 2004-07-23 2009-11-04 Ｊｓｒ株式会社 半導体装置の絶縁膜形成用組成物およびシリカ系膜の形成方法

Also Published As

Publication number Publication date
WO2005068538A1 (ja) 2005-07-28
KR101129875B1 (ko) 2012-03-28
EP1705207B1 (en) 2012-10-24
JP5110243B2 (ja) 2012-12-26
KR20060123549A (ko) 2006-12-01
WO2005068539A1 (ja) 2005-07-28
KR20060123548A (ko) 2006-12-01
US7528207B2 (en) 2009-05-05
EP1705207A4 (en) 2009-06-24
US20070015892A1 (en) 2007-01-18
TW200536621A (en) 2005-11-16
TWI292349B (enExample) 2008-01-11
EP1705207A1 (en) 2006-09-27
EP1705206A1 (en) 2006-09-27
US20070021580A1 (en) 2007-01-25
JPWO2005068539A1 (ja) 2007-12-27
TW200538490A (en) 2005-12-01
EP1705206A4 (en) 2009-06-24
JP5013045B2 (ja) 2012-08-29
JPWO2005068538A1 (ja) 2007-12-27

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