KR20060123549A - 중합체의 제조 방법, 중합체, 절연막 형성용 조성물,절연막의 제조 방법, 및 절연막 - Google Patents
중합체의 제조 방법, 중합체, 절연막 형성용 조성물,절연막의 제조 방법, 및 절연막 Download PDFInfo
- Publication number
- KR20060123549A KR20060123549A KR1020067016328A KR20067016328A KR20060123549A KR 20060123549 A KR20060123549 A KR 20060123549A KR 1020067016328 A KR1020067016328 A KR 1020067016328A KR 20067016328 A KR20067016328 A KR 20067016328A KR 20060123549 A KR20060123549 A KR 20060123549A
- Authority
- KR
- South Korea
- Prior art keywords
- group
- polymer
- acid
- polycarbosilane
- propoxysilane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
-
- H10P14/6922—
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/20—Manufacture of shaped structures of ion-exchange resins
- C08J5/22—Films, membranes or diaphragms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/14—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
-
- H10P14/6342—
-
- H10P14/6686—
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Silicon Polymers (AREA)
- Formation Of Insulating Films (AREA)
- Paints Or Removers (AREA)
- Organic Insulating Materials (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2004-00009205 | 2004-01-16 | ||
| JP2004009205 | 2004-01-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20060123549A true KR20060123549A (ko) | 2006-12-01 |
Family
ID=34792263
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020067016328A Ceased KR20060123549A (ko) | 2004-01-16 | 2005-01-14 | 중합체의 제조 방법, 중합체, 절연막 형성용 조성물,절연막의 제조 방법, 및 절연막 |
| KR1020067016327A Expired - Fee Related KR101129875B1 (ko) | 2004-01-16 | 2005-01-14 | 중합체의 제조 방법, 중합체, 절연막 형성용 조성물,절연막의 제조 방법 및 절연막 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020067016327A Expired - Fee Related KR101129875B1 (ko) | 2004-01-16 | 2005-01-14 | 중합체의 제조 방법, 중합체, 절연막 형성용 조성물,절연막의 제조 방법 및 절연막 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20070015892A1 (enExample) |
| EP (2) | EP1705206A4 (enExample) |
| JP (2) | JP5013045B2 (enExample) |
| KR (2) | KR20060123549A (enExample) |
| TW (2) | TW200536621A (enExample) |
| WO (2) | WO2005068539A1 (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005068541A1 (ja) * | 2004-01-16 | 2005-07-28 | Jsr Corporation | 有機シリカ系膜の形成方法、有機シリカ系膜、配線構造体、半導体装置、および膜形成用組成物 |
| WO2005068539A1 (ja) * | 2004-01-16 | 2005-07-28 | Jsr Corporation | ポリマーの製造方法、ポリマー、絶縁膜形成用組成物、絶縁膜の製造方法、および絶縁膜 |
| KR20070010011A (ko) * | 2004-02-26 | 2007-01-19 | 제이에스알 가부시끼가이샤 | 중합체 및 그의 제조 방법, 절연막 형성용 조성물, 및절연막 및 그의 형성 방법 |
| JP5110238B2 (ja) * | 2004-05-11 | 2012-12-26 | Jsr株式会社 | 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法 |
| JP5110239B2 (ja) * | 2004-05-11 | 2012-12-26 | Jsr株式会社 | 有機シリカ系膜の形成方法、膜形成用組成物 |
| US20080038527A1 (en) * | 2004-05-11 | 2008-02-14 | Jsr Corporation | Method for Forming Organic Silica Film, Organic Silica Film, Wiring Structure, Semiconductor Device, and Composition for Film Formation |
| US7790630B2 (en) * | 2005-04-12 | 2010-09-07 | Intel Corporation | Silicon-doped carbon dielectrics |
| JP2007045966A (ja) * | 2005-08-11 | 2007-02-22 | Fujifilm Corp | 絶縁膜形成用組成物、絶縁膜、およびその製造方法 |
| EP1947135A4 (en) * | 2005-11-11 | 2012-12-26 | Jsr Corp | POLYCARBOSILAN, METHOD OF MANUFACTURING THEREOF, SILICON DIOXIDE COMPOSITION FOR COATING APPLICATION AND SILICON DIOXIDE FILM |
| US7714092B2 (en) * | 2006-01-13 | 2010-05-11 | Starfire Systems, Inc. | Composition, preparation of polycarbosilanes and their uses |
| JP5120547B2 (ja) | 2006-02-02 | 2013-01-16 | Jsr株式会社 | 有機シリカ系膜およびその形成方法、半導体装置の絶縁膜形成用組成物およびその製造方法、ならびに配線構造体および半導体装置 |
| JP5007511B2 (ja) * | 2006-02-14 | 2012-08-22 | 富士通株式会社 | 露光光遮蔽膜形成用材料、多層配線及びその製造方法、並びに半導体装置 |
| JP5423937B2 (ja) * | 2006-03-23 | 2014-02-19 | Jsr株式会社 | 絶縁膜形成用組成物の製造方法、ポリマーの製造方法 |
| WO2007119554A1 (ja) * | 2006-03-29 | 2007-10-25 | Jsr Corporation | ポリマーの製造方法、ポリマー、ポリマー膜形成用組成物、ポリマー膜の形成方法およびポリマー膜 |
| JP4877486B2 (ja) * | 2006-05-31 | 2012-02-15 | Jsr株式会社 | 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法 |
| WO2008096656A1 (ja) * | 2007-02-07 | 2008-08-14 | Jsr Corporation | ケイ素含有ポリマーおよびその合成方法、膜形成用組成物、ならびにシリカ系膜およびその形成方法 |
| EP2123658A4 (en) * | 2007-02-14 | 2012-02-08 | Jsr Corp | MATERIAL FOR FORMING A SILICULAR FILM, AND SILICULAR INSULATING FILM AND METHOD FOR THEIR EDUCATION |
| WO2008114309A1 (ja) * | 2007-03-16 | 2008-09-25 | Fujitsu Limited | シリコン系絶縁膜のエッチング後処理剤、半導体装置の製造方法および半導体装置 |
| US8026035B2 (en) * | 2007-03-30 | 2011-09-27 | Cheil Industries, Inc. | Etch-resistant disilane and saturated hydrocarbon bridged silicon-containing polymers, method of making the same, and method of using the same |
| US20100261925A1 (en) * | 2007-07-10 | 2010-10-14 | Jsr Corporation | Method for producing silicon compound |
| JP5348373B2 (ja) * | 2008-05-29 | 2013-11-20 | Jsr株式会社 | ポリカルボシランの製造方法 |
| JP5365785B2 (ja) | 2008-05-30 | 2013-12-11 | Jsr株式会社 | 有機ケイ素化合物の製造方法 |
| JP5376118B2 (ja) * | 2008-10-29 | 2013-12-25 | Jsr株式会社 | 絶縁膜形成用組成物の製造方法、ならびに絶縁膜の形成方法 |
| JP4379637B1 (ja) | 2009-03-30 | 2009-12-09 | Jsr株式会社 | 有機ケイ素化合物の製造方法 |
| TWI785070B (zh) * | 2017-07-31 | 2022-12-01 | 美商陶氏有機矽公司 | 聚矽氧樹脂、相關方法、以及由其形成的膜 |
| KR102444014B1 (ko) * | 2019-02-05 | 2022-09-15 | 가부시키가이샤 도쿠야마 | 실리콘 에칭액 및 상기 에칭액을 이용한 실리콘 디바이스의 제조방법 |
| CN112094414B (zh) * | 2020-09-24 | 2022-01-07 | 宁波曙翔新材料股份有限公司 | 一种新型液态碳化硅陶瓷先驱体的制备方法 |
Family Cites Families (36)
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|---|---|---|---|---|
| US4220600A (en) * | 1977-10-26 | 1980-09-02 | The Foundation: The Research Institute For Special Inorganic Materials | Polycarbosilane, process for its production, and its use as material for producing silicon carbide fibers |
| JPS5461299A (en) * | 1977-10-26 | 1979-05-17 | Tokushiyu Muki Zairiyou Kenkiy | Polycarbosilane partially containing siloxane linkage and method of making same |
| JPS5872923A (ja) * | 1981-10-28 | 1983-05-02 | Hitachi Ltd | 液晶表示素子 |
| JPS6169836A (ja) * | 1984-09-12 | 1986-04-10 | Chisso Corp | けい素含有ステツプラダ−ポリマ−及びその製造方法 |
| DE3841348A1 (de) * | 1988-12-08 | 1990-06-13 | Kali Chemie Ag | Verfahren zur herstellung von polycarbosilanen und neue polycarbosilane |
| US5202405A (en) * | 1990-08-27 | 1993-04-13 | E. I. Du Pont De Nemours And Company | Silicon carbide precursors |
| JP2712817B2 (ja) * | 1990-11-15 | 1998-02-16 | 信越化学工業株式会社 | ポリオルガノシロキサン樹脂の製造方法 |
| JPH05105761A (ja) * | 1991-09-30 | 1993-04-27 | Kanegafuchi Chem Ind Co Ltd | ケイ素系ハイブリツド材料 |
| JPH05105739A (ja) | 1991-10-16 | 1993-04-27 | Nippon Steel Chem Co Ltd | 半導体封止用樹脂組成物 |
| JP3296440B2 (ja) * | 1991-10-17 | 2002-07-02 | 鐘淵化学工業株式会社 | ケイ素系ハイブリッド材料 |
| JP3320440B2 (ja) | 1992-03-17 | 2002-09-03 | 触媒化成工業株式会社 | 被膜形成用塗布液およびその製造方法 |
| JP3073313B2 (ja) | 1992-05-12 | 2000-08-07 | 触媒化成工業株式会社 | 半導体装置およびその製造方法 |
| US5623030A (en) * | 1994-12-01 | 1997-04-22 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Curable composition and process for producing molded articles using the same |
| JPH08217879A (ja) * | 1995-02-15 | 1996-08-27 | Mitsubishi Rayon Co Ltd | 耐熱性樹脂およびその製造方法 |
| JP4473352B2 (ja) | 1998-05-26 | 2010-06-02 | 東京応化工業株式会社 | 低比誘電率シリカ系被膜、それを形成するための塗布液、その塗布液の調製方法 |
| JPH11340220A (ja) | 1998-05-26 | 1999-12-10 | Tokyo Ohka Kogyo Co Ltd | シリカ系被膜形成用塗布液及びその製造方法 |
| JP4305587B2 (ja) * | 1999-04-27 | 2009-07-29 | Jsr株式会社 | 半導体装置用の層間絶縁膜形成用材料 |
| JP2000319588A (ja) * | 1999-05-10 | 2000-11-21 | Sony Corp | 熱吸収膜用塗料、熱吸収膜およびカラー陰極線管 |
| JP4756526B2 (ja) * | 1999-10-25 | 2011-08-24 | 富士通株式会社 | 多孔質化低誘電率絶縁膜の形成方法及び該方法で形成された多孔質化低誘電率絶縁膜及び該多孔質化低誘電率絶縁膜を用いた半導体装置 |
| JP3941327B2 (ja) * | 2000-02-01 | 2007-07-04 | Jsr株式会社 | シリカ系膜の製造方法、シリカ系膜、絶縁膜および半導体装置 |
| JP3604007B2 (ja) * | 2000-03-29 | 2004-12-22 | 富士通株式会社 | 低誘電率被膜形成材料、及びそれを用いた被膜と半導体装置の製造方法 |
| JP4117436B2 (ja) * | 2000-04-10 | 2008-07-16 | Jsr株式会社 | 膜形成用組成物、膜の形成方法およびシリカ系膜 |
| JP4507377B2 (ja) * | 2000-09-25 | 2010-07-21 | Jsr株式会社 | ケイ素ポリマー、膜形成用組成物および絶縁膜形成用材料 |
| JP4545973B2 (ja) * | 2001-03-23 | 2010-09-15 | 富士通株式会社 | シリコン系組成物、低誘電率膜、半導体装置および低誘電率膜の製造方法 |
| KR100451044B1 (ko) * | 2001-06-07 | 2004-10-02 | 주식회사 엘지화학 | 유기실리케이트 중합체의 제조방법, 및 이를 이용한절연막의 제조방법 |
| JP2003115482A (ja) * | 2001-10-05 | 2003-04-18 | Asahi Kasei Corp | 絶縁膜形成用組成物 |
| US7371433B2 (en) * | 2002-04-12 | 2008-05-13 | Az Electronic Materials Usa Corp. | Composition of silicon-containing copolymer, solvent-soluble crosslinked silicon-containing copolymer, and cured articles obtained therefrom |
| US6844568B2 (en) * | 2002-04-25 | 2005-01-18 | Kyocera Corporation | Photoelectric conversion device and manufacturing process thereof |
| US6809041B2 (en) | 2002-07-01 | 2004-10-26 | Rensselaer Polytechnic Institute | Low dielectric constant films derived by sol-gel processing of a hyperbranched polycarbosilane |
| KR20050024721A (ko) * | 2003-09-01 | 2005-03-11 | 삼성전자주식회사 | 신규 실록산계 수지 및 이를 이용한 반도체 층간 절연막 |
| US7462678B2 (en) * | 2003-09-25 | 2008-12-09 | Jsr Corporation | Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film |
| JP4737361B2 (ja) * | 2003-12-19 | 2011-07-27 | Jsr株式会社 | 絶縁膜およびその形成方法 |
| WO2005068539A1 (ja) * | 2004-01-16 | 2005-07-28 | Jsr Corporation | ポリマーの製造方法、ポリマー、絶縁膜形成用組成物、絶縁膜の製造方法、および絶縁膜 |
| WO2005068541A1 (ja) * | 2004-01-16 | 2005-07-28 | Jsr Corporation | 有機シリカ系膜の形成方法、有機シリカ系膜、配線構造体、半導体装置、および膜形成用組成物 |
| EP1615260A3 (en) * | 2004-07-09 | 2009-09-16 | JSR Corporation | Organic silicon-oxide-based film, composition and method for forming the same, and semiconductor device |
| JP4355939B2 (ja) * | 2004-07-23 | 2009-11-04 | Jsr株式会社 | 半導体装置の絶縁膜形成用組成物およびシリカ系膜の形成方法 |
-
2005
- 2005-01-14 WO PCT/JP2005/000373 patent/WO2005068539A1/ja not_active Ceased
- 2005-01-14 JP JP2005517076A patent/JP5013045B2/ja not_active Expired - Lifetime
- 2005-01-14 TW TW094101151A patent/TW200536621A/zh not_active IP Right Cessation
- 2005-01-14 EP EP05703611A patent/EP1705206A4/en not_active Withdrawn
- 2005-01-14 EP EP05703612A patent/EP1705207B1/en not_active Expired - Lifetime
- 2005-01-14 KR KR1020067016328A patent/KR20060123549A/ko not_active Ceased
- 2005-01-14 KR KR1020067016327A patent/KR101129875B1/ko not_active Expired - Fee Related
- 2005-01-14 WO PCT/JP2005/000372 patent/WO2005068538A1/ja not_active Ceased
- 2005-01-14 TW TW094101152A patent/TWI265172B/zh not_active IP Right Cessation
- 2005-01-14 JP JP2005517075A patent/JP5110243B2/ja not_active Expired - Lifetime
-
2006
- 2006-07-12 US US11/484,604 patent/US20070015892A1/en not_active Abandoned
- 2006-07-13 US US11/485,508 patent/US7528207B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| TW200538490A (en) | 2005-12-01 |
| EP1705207A1 (en) | 2006-09-27 |
| US20070021580A1 (en) | 2007-01-25 |
| EP1705206A1 (en) | 2006-09-27 |
| TWI265172B (en) | 2006-11-01 |
| US7528207B2 (en) | 2009-05-05 |
| US20070015892A1 (en) | 2007-01-18 |
| WO2005068538A1 (ja) | 2005-07-28 |
| WO2005068539A1 (ja) | 2005-07-28 |
| KR101129875B1 (ko) | 2012-03-28 |
| JP5110243B2 (ja) | 2012-12-26 |
| JP5013045B2 (ja) | 2012-08-29 |
| EP1705206A4 (en) | 2009-06-24 |
| EP1705207B1 (en) | 2012-10-24 |
| TWI292349B (enExample) | 2008-01-11 |
| EP1705207A4 (en) | 2009-06-24 |
| JPWO2005068538A1 (ja) | 2007-12-27 |
| JPWO2005068539A1 (ja) | 2007-12-27 |
| KR20060123548A (ko) | 2006-12-01 |
| TW200536621A (en) | 2005-11-16 |
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