TWI253754B - Semiconductor apparatus and manufacturing method thereof - Google Patents
Semiconductor apparatus and manufacturing method thereof Download PDFInfo
- Publication number
- TWI253754B TWI253754B TW093125779A TW93125779A TWI253754B TW I253754 B TWI253754 B TW I253754B TW 093125779 A TW093125779 A TW 093125779A TW 93125779 A TW93125779 A TW 93125779A TW I253754 B TWI253754 B TW I253754B
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- Taiwan
- Prior art keywords
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- semiconductor
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- semiconductor layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 246
- 238000004519 manufacturing process Methods 0.000 title claims description 86
- 230000000694 effects Effects 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims description 97
- 238000000034 method Methods 0.000 claims description 67
- 229910052732 germanium Inorganic materials 0.000 claims description 55
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 55
- 238000005468 ion implantation Methods 0.000 claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 239000004575 stone Substances 0.000 claims description 32
- 230000015572 biosynthetic process Effects 0.000 claims description 29
- 230000008569 process Effects 0.000 claims description 23
- 239000013039 cover film Substances 0.000 claims description 16
- 238000009413 insulation Methods 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 13
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical group [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims description 11
- 229910052805 deuterium Inorganic materials 0.000 claims description 11
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 10
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 8
- 229910052744 lithium Inorganic materials 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 7
- 230000001629 suppression Effects 0.000 claims description 7
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- 230000009467 reduction Effects 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
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- 239000010410 layer Substances 0.000 description 659
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- 229910052707 ruthenium Inorganic materials 0.000 description 17
- 238000009792 diffusion process Methods 0.000 description 15
- 238000001459 lithography Methods 0.000 description 15
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 9
- 239000010936 titanium Substances 0.000 description 8
- 238000010276 construction Methods 0.000 description 7
- 239000007943 implant Substances 0.000 description 7
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 7
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 7
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 229910052797 bismuth Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- -1 germanium (Ge) Chemical class 0.000 description 4
- 238000006138 lithiation reaction Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 229960002050 hydrofluoric acid Drugs 0.000 description 3
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 3
- 241000251468 Actinopterygii Species 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
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- 238000005520 cutting process Methods 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- DJQYKWDYUQPOOE-OGRLCSSISA-N (2s,3s)-2-[4-[(1s)-1-amino-3-methylbutyl]triazol-1-yl]-1-[4-[4-[4-[(2s,3s)-2-[4-[(1s)-1-amino-3-methylbutyl]triazol-1-yl]-3-methylpentanoyl]piperazin-1-yl]-6-[2-[2-(2-prop-2-ynoxyethoxy)ethoxy]ethylamino]-1,3,5-triazin-2-yl]piperazin-1-yl]-3-methylpentan- Chemical compound Cl.N1([C@@H]([C@@H](C)CC)C(=O)N2CCN(CC2)C=2N=C(NCCOCCOCCOCC#C)N=C(N=2)N2CCN(CC2)C(=O)[C@H]([C@@H](C)CC)N2N=NC(=C2)[C@@H](N)CC(C)C)C=C([C@@H](N)CC(C)C)N=N1 DJQYKWDYUQPOOE-OGRLCSSISA-N 0.000 description 1
- 241001061264 Astragalus Species 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 206010062717 Increased upper airway secretion Diseases 0.000 description 1
- 241001629511 Litchi Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 241000282320 Panthera leo Species 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001347 Stellite Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 235000006533 astragalus Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001622 bismuth compounds Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- AHICWQREWHDHHF-UHFFFAOYSA-N chromium;cobalt;iron;manganese;methane;molybdenum;nickel;silicon;tungsten Chemical compound C.[Si].[Cr].[Mn].[Fe].[Co].[Ni].[Mo].[W] AHICWQREWHDHHF-UHFFFAOYSA-N 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000001804 emulsifying effect Effects 0.000 description 1
- 210000003414 extremity Anatomy 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 150000002291 germanium compounds Chemical class 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 150000002642 lithium compounds Chemical class 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052609 olivine Inorganic materials 0.000 description 1
- 239000010450 olivine Substances 0.000 description 1
- 208000026435 phlegm Diseases 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000003642 reactive oxygen metabolite Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical group [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- BLFQGGGGFNSJKA-XHXSRVRCSA-N sertraline hydrochloride Chemical compound Cl.C1([C@@H]2CC[C@@H](C3=CC=CC=C32)NC)=CC=C(Cl)C(Cl)=C1 BLFQGGGGFNSJKA-XHXSRVRCSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 210000004233 talus Anatomy 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/62—Fin field-effect transistors [FinFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
- H10D30/0241—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] doping of vertical sidewalls, e.g. using tilted or multi-angled implants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
- H10D30/0245—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
Landscapes
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003317259A JP2005086024A (ja) | 2003-09-09 | 2003-09-09 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200522359A TW200522359A (en) | 2005-07-01 |
| TWI253754B true TWI253754B (en) | 2006-04-21 |
Family
ID=34225273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093125779A TWI253754B (en) | 2003-09-09 | 2004-08-27 | Semiconductor apparatus and manufacturing method thereof |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US7129550B2 (enExample) |
| JP (1) | JP2005086024A (enExample) |
| TW (1) | TWI253754B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7855411B2 (en) | 2007-05-25 | 2010-12-21 | Macronix International Co., Ltd. | Memory cell |
Families Citing this family (164)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10361695B3 (de) * | 2003-12-30 | 2005-02-03 | Infineon Technologies Ag | Transistorstruktur mit gekrümmtem Kanal, Speicherzelle und Speicherzellenfeld für DRAMs sowie Verfahren zur Herstellung eines DRAMs |
| KR20050108916A (ko) * | 2004-05-14 | 2005-11-17 | 삼성전자주식회사 | 다마신 공정을 이용한 핀 전계 효과 트랜지스터의 형성 방법 |
| JP2006013303A (ja) * | 2004-06-29 | 2006-01-12 | Toshiba Corp | 半導体装置及びその製造方法 |
| KR100614800B1 (ko) * | 2004-12-10 | 2006-08-22 | 삼성전자주식회사 | 복수개의 돌출된 채널을 갖는 트랜지스터의 제조 방법 |
| JP2006196646A (ja) * | 2005-01-13 | 2006-07-27 | Renesas Technology Corp | 半導体装置及びその製造方法 |
| JP2006261188A (ja) * | 2005-03-15 | 2006-09-28 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置 |
| KR100594327B1 (ko) * | 2005-03-24 | 2006-06-30 | 삼성전자주식회사 | 라운드 형태의 단면을 가지는 나노와이어를 구비한 반도체소자 및 그 제조 방법 |
| KR100691006B1 (ko) | 2005-04-29 | 2007-03-09 | 주식회사 하이닉스반도체 | 메모리 소자의 셀 트랜지스터 구조 및 그 제조방법 |
| US7348642B2 (en) * | 2005-08-03 | 2008-03-25 | International Business Machines Corporation | Fin-type field effect transistor |
| KR100696197B1 (ko) * | 2005-09-27 | 2007-03-20 | 한국전자통신연구원 | 실리콘 기판을 이용한 다중 게이트 모스 트랜지스터 및 그제조 방법 |
| US7309626B2 (en) * | 2005-11-15 | 2007-12-18 | International Business Machines Corporation | Quasi self-aligned source/drain FinFET process |
| US20080014689A1 (en) * | 2006-07-07 | 2008-01-17 | Texas Instruments Incorporated | Method for making planar nanowire surround gate mosfet |
| JP4552908B2 (ja) | 2006-07-26 | 2010-09-29 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
| EP1916717A3 (en) * | 2006-08-23 | 2010-12-22 | Imec | Method for doping a fin-based semiconductor device |
| EP1892765A1 (en) * | 2006-08-23 | 2008-02-27 | INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) | Method for doping a fin-based semiconductor device |
| JP4282699B2 (ja) * | 2006-09-01 | 2009-06-24 | 株式会社東芝 | 半導体装置 |
| KR100801063B1 (ko) * | 2006-10-02 | 2008-02-04 | 삼성전자주식회사 | 게이트 올 어라운드형 반도체 장치 및 그 제조 방법 |
| JP2008098553A (ja) * | 2006-10-16 | 2008-04-24 | Elpida Memory Inc | 半導体装置及びその製造方法 |
| JP2008117838A (ja) * | 2006-11-01 | 2008-05-22 | Elpida Memory Inc | 半導体装置及びその製造方法 |
| US7646046B2 (en) * | 2006-11-14 | 2010-01-12 | Infineon Technologies Ag | Field effect transistor with a fin structure |
| US7880202B2 (en) * | 2006-11-27 | 2011-02-01 | Infineon Technologies Ag | Modulated-Vt transistor |
| JP4473889B2 (ja) * | 2007-04-26 | 2010-06-02 | 株式会社東芝 | 半導体装置 |
| KR100855834B1 (ko) * | 2007-05-25 | 2008-09-01 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조 방법 |
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| JP2005086024A (ja) | 2005-03-31 |
| US20060166456A1 (en) | 2006-07-27 |
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| TW200522359A (en) | 2005-07-01 |
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