JP2005086024A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP2005086024A
JP2005086024A JP2003317259A JP2003317259A JP2005086024A JP 2005086024 A JP2005086024 A JP 2005086024A JP 2003317259 A JP2003317259 A JP 2003317259A JP 2003317259 A JP2003317259 A JP 2003317259A JP 2005086024 A JP2005086024 A JP 2005086024A
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Prior art keywords
layer
semiconductor
source
insulating layer
semiconductor layer
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Pending
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JP2003317259A
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English (en)
Japanese (ja)
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JP2005086024A5 (enExample
Inventor
Minoru Fujiwara
実 藤原
Akira Sotozono
明 外園
Kazunari Ishimaru
一成 石丸
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Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2003317259A priority Critical patent/JP2005086024A/ja
Priority to US10/775,017 priority patent/US7129550B2/en
Priority to TW093125779A priority patent/TWI253754B/zh
Publication of JP2005086024A publication Critical patent/JP2005086024A/ja
Priority to US11/388,523 priority patent/US20060166456A1/en
Publication of JP2005086024A5 publication Critical patent/JP2005086024A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0241—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] doping of vertical sidewalls, e.g. using tilted or multi-angled implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0245—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface

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  • Thin Film Transistor (AREA)
JP2003317259A 2003-09-09 2003-09-09 半導体装置及びその製造方法 Pending JP2005086024A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003317259A JP2005086024A (ja) 2003-09-09 2003-09-09 半導体装置及びその製造方法
US10/775,017 US7129550B2 (en) 2003-09-09 2004-02-09 Fin-shaped semiconductor device
TW093125779A TWI253754B (en) 2003-09-09 2004-08-27 Semiconductor apparatus and manufacturing method thereof
US11/388,523 US20060166456A1 (en) 2003-09-09 2006-03-25 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003317259A JP2005086024A (ja) 2003-09-09 2003-09-09 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2005086024A true JP2005086024A (ja) 2005-03-31
JP2005086024A5 JP2005086024A5 (enExample) 2006-06-15

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Family Applications (1)

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JP2003317259A Pending JP2005086024A (ja) 2003-09-09 2003-09-09 半導体装置及びその製造方法

Country Status (3)

Country Link
US (2) US7129550B2 (enExample)
JP (1) JP2005086024A (enExample)
TW (1) TWI253754B (enExample)

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KR100691006B1 (ko) 2005-04-29 2007-03-09 주식회사 하이닉스반도체 메모리 소자의 셀 트랜지스터 구조 및 그 제조방법
JP2008034427A (ja) * 2006-07-26 2008-02-14 Elpida Memory Inc 半導体装置及びその製造方法
JP2008053725A (ja) * 2006-08-23 2008-03-06 Interuniv Micro Electronica Centrum Vzw フィンベース半導体デバイスのドーピング方法
JP2008117838A (ja) * 2006-11-01 2008-05-22 Elpida Memory Inc 半導体装置及びその製造方法
KR100871712B1 (ko) 2007-07-10 2008-12-08 삼성전자주식회사 전계효과 트랜지스터 및 그의 제조 방법
JP2009503893A (ja) * 2005-08-03 2009-01-29 インターナショナル・ビジネス・マシーンズ・コーポレーション フィン型電界効果トランジスタ
JP2009021456A (ja) * 2007-07-13 2009-01-29 Renesas Technology Corp フィン型トランジスタおよびその形成方法
JP2010079038A (ja) * 2008-09-26 2010-04-08 Seiko Epson Corp 電気光学装置及び電子機器並びにトランジスタ
US7723797B2 (en) 2007-08-31 2010-05-25 Samsung Electronics Co., Ltd.. Fin field effect transistor and method of manufacturing the same
US7781274B2 (en) 2008-03-27 2010-08-24 Kabushiki Kaisha Toshiba Multi-gate field effect transistor and method for manufacturing the same
JP2010530623A (ja) * 2007-06-20 2010-09-09 インターナショナル・ビジネス・マシーンズ・コーポレーション 自己整合したソース／ドレイン領域を有するフィン型電界効果トランジスタ・デバイスおよびその形成方法
US7915693B2 (en) 2007-07-27 2011-03-29 Kabushiki Kaisha Toshiba Semiconductor device with fin and silicide structure
KR20110049709A (ko) * 2009-11-03 2011-05-12 인터내셔널 비지네스 머신즈 코포레이션 배향된 주입에 의한 ｆｉｎＦＥＴ 스페이서 형성
US8269271B2 (en) 2009-04-23 2012-09-18 Renesas Electronics Corporation Hybrid planarFET and FinFET provided on a chip
US8362574B2 (en) 2010-06-04 2013-01-29 Kabushiki Kaisha Toshiba Faceted EPI shape and half-wrap around silicide in S/D merged FinFET
CN104637818A (zh) * 2013-11-14 2015-05-20 国际商业机器公司 用于制造鳍片场效应晶体管器件的方法和鳍片场效应晶体管器件
JP2015517737A (ja) * 2012-05-15 2015-06-22 インターナショナル・ビジネス・マシーンズ・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｂｕｓｉｎｅｓｓ Ｍａｃｈｉｎｅｓ Ｃｏｒｐｏｒａｔｉｏｎ 半導体デバイスの電気的短絡を防止するための方法
US9269813B2 (en) 2013-01-02 2016-02-23 Samsung Electronics Co., Ltd. Field effect transistor
KR20220001469A (ko) * 2020-06-29 2022-01-05 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 퇴적 윈도우 확장
JP2023544048A (ja) * 2020-10-04 2023-10-19 アプライド マテリアルズ インコーポレイテッド ゲルマニウムの選択的堆積

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DE10361695B3 (de) * 2003-12-30 2005-02-03 Infineon Technologies Ag Transistorstruktur mit gekrümmtem Kanal, Speicherzelle und Speicherzellenfeld für DRAMs sowie Verfahren zur Herstellung eines DRAMs
KR20050108916A (ko) * 2004-05-14 2005-11-17 삼성전자주식회사 다마신 공정을 이용한 핀 전계 효과 트랜지스터의 형성 방법
JP2006013303A (ja) * 2004-06-29 2006-01-12 Toshiba Corp 半導体装置及びその製造方法
KR100614800B1 (ko) * 2004-12-10 2006-08-22 삼성전자주식회사 복수개의 돌출된 채널을 갖는 트랜지스터의 제조 방법
JP2006196646A (ja) * 2005-01-13 2006-07-27 Renesas Technology Corp 半導体装置及びその製造方法
JP2006261188A (ja) * 2005-03-15 2006-09-28 Seiko Epson Corp 半導体装置の製造方法及び半導体装置
KR100594327B1 (ko) * 2005-03-24 2006-06-30 삼성전자주식회사 라운드 형태의 단면을 가지는 나노와이어를 구비한 반도체소자 및 그 제조 방법
KR100696197B1 (ko) * 2005-09-27 2007-03-20 한국전자통신연구원 실리콘 기판을 이용한 다중 게이트 모스 트랜지스터 및 그제조 방법
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JP4282699B2 (ja) * 2006-09-01 2009-06-24 株式会社東芝 半導体装置
KR100801063B1 (ko) * 2006-10-02 2008-02-04 삼성전자주식회사 게이트 올 어라운드형 반도체 장치 및 그 제조 방법
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