TWI248654B - Semiconductor package and method for manufacturing the same - Google Patents

Semiconductor package and method for manufacturing the same Download PDF

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Publication number
TWI248654B
TWI248654B TW093114195A TW93114195A TWI248654B TW I248654 B TWI248654 B TW I248654B TW 093114195 A TW093114195 A TW 093114195A TW 93114195 A TW93114195 A TW 93114195A TW I248654 B TWI248654 B TW I248654B
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Taiwan
Prior art keywords
insulating film
semiconductor package
package structure
wiring
semiconductor
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Application number
TW093114195A
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English (en)
Other versions
TW200509269A (en
Inventor
Takeshi Wakabayashi
Shinji Wakisaka
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Casio Computer Co Ltd
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Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Publication of TW200509269A publication Critical patent/TW200509269A/zh
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Publication of TWI248654B publication Critical patent/TWI248654B/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/20—Mixing gases with liquids
    • B01F23/23—Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids
    • B01F23/231—Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids by bubbling
    • B01F23/23105—Arrangement or manipulation of the gas bubbling devices
    • B01F23/2312—Diffusers
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    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B01F23/23—Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids
    • B01F23/237—Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids characterised by the physical or chemical properties of gases or vapours introduced in the liquid media
    • B01F23/2376—Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids characterised by the physical or chemical properties of gases or vapours introduced in the liquid media characterised by the gas being introduced
    • B01F23/23761—Aerating, i.e. introducing oxygen containing gas in liquids
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    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
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Description

1248654 九、發明說明： 【發明所屬之技術領域】 本發明是關於半導體封裝結構及其製造方法 【先前技術】
在習知的半導體封裝結構有被稱爲CSP(Chip Size Package:晶片尺寸封裝）。此CSP係在形成有複數個外部連 接用的連接墊之半導體基板的頂面配設有絕緣膜，在對應 絕緣膜的各連接墊的部分設有開口部，由經由開口部露出 的連接墊的頂面到絕緣膜的頂面的預定的位置配設有配線（ 例如參照專利文獻1)。此情形在包含經由開口部露出的連 接墊的頂面的絕緣膜的頂面全體形成底層金屬層，藉由以 底層金屬層當作電鍍電流路徑的銅的電解電鍍，在底層金 屬層的頂面的預定位置形成配線，以配線作爲罩幕（mask) 蝕刻除去底層金屬層的不要的部分，僅在配線下使底層金 屬層殘存。 專利文獻1 :日本特開2000- 1 95 890號公報（第8圖〜第1〇 圖） φ 【發明內容】 但是，在上述習知的半導體封裝結構由於是在對應絕 緣膜的各連接墊的部分形成開口部，藉由濺鍍（sputter)法或 無電解電鍍法形成當作電鍍電流路徑的底層金屬層，藉由 電解電鍍形成配線的方法，故爲絕緣膜與底層金屬層的附 著強度弱，特別是在開口部的側壁中斷線等容易發生的構 造，進而連接墊與配線的電性連接的可靠度低。 1248654 因此，本發明係以提供可提高外部連接用的電極與配 線的電性連接的可靠度之半導體封裝結構及其製造方法爲目 的。 如果依照本發明，提供一種半導體封裝結構，其特徵 包含： 至少一個半導體構成體（2)，具有配設於半導體基板（4) 上的複數個外部連接用電極（12);
絕緣膜（15)，覆蓋前述半導體構成體（2);以及 配線（16) ’具有突起電極（17)，形成於前述絕緣膜（15) 上，其中 前述配線（16)的突起電極（17)係深入對應前述外部連接 用電極（1 2 )的前述絕緣膜（1 5 )的部分，連接於前述外部連接 用電極（1 2 )。 而且，如果依照本發明，提供一種半導體封裝結構的 製造方法，其特徵包含：
以絕緣膜（1 5 )覆蓋具有複數個外部連接用電極（丨2)的半 導體構成體（2)的頂面之製程； 在前述絕緣膜（1 5 )上配置具有對應前述各外部連接用 電極（1 2 )的突起電極（1 7 )的金屬板（1 6 a)之製程； 使前述金屬板（1 6 a)的各突起電極（丨7 )深入前述絕緣膜 (1 5 )’連接於前述各外部連接用電極（1 2 )之製程；以及 形成前述金屬板（16a)的圖案，形成配線（16)之製程。 如果依照本發明，因在由金屬板構成的配線配設突起 電極，在使此突起電極深入形成於外部連接用電極上的絕 -6_ 1248654 緣膜的狀態下連接於外部連接用電極，故突起電極與絕緣 膜的附著強度提高，配線與外部連接用的電極的電性連接 的可靠度提高。 【實施方式】 第1圖是顯示作爲本發明的實施形態的半導體封裝結 構的剖面圖。此半導體封裝結構係具備由矽、玻璃、陶瓷、 樹脂、金屬等構成的平面矩形形狀的基底板1。 在基底板1的頂面中央部，比基底板1的尺寸稍爲小 某種程度的尺寸的平面矩形形狀的半導體構成體2的底面 係經由由晶粒接合（die bond)材構成的接著層3而被接著。 此情形半導體構成體2具有後述的配線、柱狀電極、密封 膜，一般係稱爲CSP，如後述，在矽晶圓上形成配線、柱 狀電極、密封膜後，因採用藉由切割（dicing)得到各個半導 體構成體 2 的方法，故也特別稱爲晶圓級（wafer level)CSP(W-CSP)。以下針對半導體構成體2的構成來說 明。 半導體構成體2具備矽基板（半導體基板）4。矽基板4 經由接著層3接著於基底板1。在矽基板4的頂面中央部配 設有積體電路（未圖示），在矽基板4的頂面中的積體電路 的週邊部，由鋁系金屬等構成的複數個連接墊5係分別連 接於構成積體電路的積體電路元件而配設。在除了連接墊5 的中央部的矽基板4的頂面配設有由氧化矽等的無機材料 構成的絕緣膜6，連接墊5的中央部係經由設於絕緣膜6的 開口部7露出。 1248654 在絕緣膜6的頂面配設有由環氧系樹脂或聚醯亞胺 (polyimide)系樹脂等的有機樹脂材料構成的保護膜（絕緣膜 )8。此情形在對應絕緣膜6的開口部7的部分中的保護膜8 設有開口部9。由經由兩開口部7、9露出的連接墊5的頂 面到保護膜8的頂面配設有延伸到矽基板4的中央側的底 層金屬層10。在底層金屬層10的頂面全體配設有由銅構成 的配線1 1。
在配線1 1的連接墊部頂面配設有由銅構成的柱狀電極 (外部連接用電極）1 2。在包含配線1 1的保護膜8的頂面， 由環氧系樹脂或聚醯亞胺系樹脂等的熱硬化性樹脂材料構 成的密封膜（絕緣膜）1 3係使其頂面與柱狀電極1 2的頂面面 一致而配設。如此，稱爲W-CSP的半導體構成體2包含矽 基板4、連接墊5、絕緣膜6，更包含保護膜8、配線1 1、 柱狀電極1 2、密封膜1 3而構成。
在半導體構成體2的周圍中的基底板1的頂面，由環 氧系樹脂或聚醯亞胺系樹脂等構成的矩形框狀的絕緣層14 係使其頂面大致與半導體構成體2的頂面一致而配設。在 半導體構成體2以及絕緣層1 4的頂面，絕緣膜1 5係使其 頂面被平坦而配設。絕緣膜1 5例如由加熱硬化使環氧系樹 脂含浸於玻璃纖維的預浸（prepreg)材之熱硬化性樹脂材料 構成。 在絕緣膜1 5的頂面配設有形成由銅系金屬材料構成的 金屬板的圖案而形成的上層配線1 6。此情形在上層配線i 6 的底面中，在對應柱狀電極1 2的頂面中央部的部分一體地 1248654 形成有截頭圓錐形狀的突起電極17 °突起電極17係在深入 絕緣膜1 5的狀態下壓接於柱狀電極1 2的頂面中央部。 在包含上層配線1 6的絕緣膜1 5的頂面配設有由抗銲 劑（solder resist)等構成的上層絕緣膜18。在對應上層配線 1 6的連接墊部的部分中的上層絕緣膜1 8設有開口部1 9。 在開口部19內以及其上方，錫球（solder ball)20係連接於 上層配線1 6的連接墊部而配設。複數個錫球2 0係在上層 絕緣膜1 8上配置成矩陣狀。 但是，基底板1的尺寸比半導體構成體2的尺寸稍大 某種程度乃因依照矽基板4上的連接墊5的數目的增加， 使錫球20的配置區域比半導體構成體2的尺寸稍大某種程 度，據此，使上層配線1 6的連接墊部（上層絕緣膜1 8的開 口部19內的部分）的尺寸以及間距（pitch)比柱狀電極12的 尺寸以及間距還大。 因此，配置成矩陣狀的上層配線1 6的連接墊部不僅配 置於對應半導體構成體2的區域，也配置於對應配設於半 導體構成體2的周側面的外側的絕緣層1 4的區域上。即配 置成矩陣狀的錫球20之中至少最外周的錫球20係配置於 比半導體構成體2還位於外側的周圍。 如此，在此半導體封裝結構中其特徵爲在矽基板4上 不僅具有連接墊5、絕緣膜6，也在形成保護膜8、配線1 1 、柱狀電極1 2、密封膜1 3等的半導體構成體2的周圍以及 這些構件的頂面配設絕緣層1 4以及絕緣膜1 5，在絕緣膜1 5 的頂面配設經由形成於該絕緣膜1 5的突起電極 1 7連接於 1248654 柱狀電極1 2之形成金屬板的圖案而成的上層配線1 6的構 成。 此情形藉由絕緣膜1 5的頂面爲平坦，如後述，使在以 後的製程形成的上層配線1 6或錫球20的頂面的高度位置 均等，可提高結合（bonding)時的可靠度。而且如後述，可 使形成金屬板的圖案而形成的上層配線1 6的厚度均勻，並 且可使上層配線16不發生層差。而且，半導體構成體2因 以保護膜8被覆積體電路上後，也包含形成於該保護膜8 上的上層配線1 6上，以密封膜1 3密封除了形成有柱狀電 極1 2的部分之保護膜8全面，故成爲對保管時以及搬運時 的內部損傷絕對的可靠度被確保的KGD(Known Good Die: 已知好的晶粒）。因此，如以下的說明，埋入此KGD的半 導體構成體2構成半導體封裝結構的情形，幾乎沒有像半導 體構成體2故障這種情形，可得到可靠度極高的半導體封 裝結構。 其次，針對此半導體封裝結構的製造方法的一例來說 明，首先針對半導體構成體2的製造方法的一例來說明。 此情形首先如第2圖所示，準備在晶圓狀態的矽基板（半導 體基板）4上配設有由鋁系金屬等構成的連接墊5、由氧化 矽等構成的絕緣膜6以及由環氧系樹脂或聚醯亞胺系樹脂 等構成的保護膜8，連接墊5的中央部係經由形成於絕緣膜 6以及保護膜8的開口部7、9而露出者。在上述中，在晶 圓狀態的砂基板4於形成有各半導體構成體的區域形成有 預定功能的積體電路，連接墊5係分別電性連接於形成於 -10- 1248654 所對應的區域的積體電路。 其次如第3圖所示，在包含經由兩開口部7、9露出的 連接墊5的頂面的保護膜8的頂面全體形成底層金屬層1 0 。此情形底層金屬層1 〇爲僅藉由無電解電鍍形成的銅層也 可以，而且爲僅藉由濺鍍（sputter)形成的銅層者也可以’再 者，在藉由濺鍍形成的鈦等的薄膜層上利用濺鑛形成銅層 也可以。
其次，在底層金屬層1 〇的頂面形成電鍍光阻膜2 1的 圖案（pattern)。此情形在對應配線1 1形成區域的部分中的 電鍍光阻膜2 1形成有開口部22。其次，藉由以底層金屬層 1 〇作爲電鍍電流路徑進行銅的電解電鍍，在電鍍光阻膜2 1 的開口部22內的底層金屬層10的頂面形成配線1 1。其次 ，剝離電鍍光阻膜2 1。
其次，如第4圖所示在包含配線Π的底層金屬層1 〇 的頂面形成電鍍光阻膜23的圖案。此情形在對應柱狀電極 1 2形成區域的部分中的電鍍光阻膜23形成有開口部24。 其次，藉由以底層金屬層1 〇作爲電鍍電流路徑進行銅的電 解電鍍，在電鍍光阻膜23的開口部24內的配線1 1的連接 墊部頂面形成柱狀電極1 2。 其次，剝離電鍍光阻膜23，其次，若以柱狀電極12 以及配線11作爲罩幕（mask)蝕刻除去底層金屬層10的不 要的部分，則如第5圖所示僅在配線1 1下殘存有底層金屬
其次如第6圖所示，藉由網版印刷（screen print)法、 -11- 1248654 旋塗（spin coating)法、晶粒塗佈（die coat)法等，在包含柱 狀電極1 2以及配線1 1的保護膜8的頂面全體，使由環氧 系樹脂或聚醯亞胺系樹脂等的熱硬化性樹脂其厚度比柱狀 電極1 2的高度還厚而形成，藉由加熱使其硬化以形成密封 膜1 3。因此在此狀態下，柱狀電極1 2的頂面被密封膜1 3 覆蓋。
其次，硏磨密封膜1 3以及柱狀電極12的頂面側，如 第7圖所示使柱狀電極1 2的頂面露出，且平坦化包含此露 出的柱狀電極12的頂面之密封膜13的頂面。其中，適宜 地硏磨柱狀電極1 2的頂面側乃因藉由電解電鍍形成的柱狀 電極1 2的高度有誤差，故消除此誤差使柱狀電極12的高 度均等。
其次如第8圖所示，在矽基板4的底面全體接著接著 層3。接著層3係由環氧系樹脂、聚醯亞胺系樹脂等的晶粒 接合材構成，藉由加熱以及加壓在半硬化狀態下固著於矽 基板4。其次，將固著於矽基板4的接著層3貼附於切割膠 帶（dicing tape)(未圖示），在經過第9圖所示的切割製程後 ，若由切割膠帶剝離，則如第1圖所示可得到複數個在矽 基板4的底面具有接著層3的半導體構成體2。 在如此得到的半導體構成體2中因在矽基板4的底面 具有接著層3，故無須在切割製程後於各半導體構成體2的 矽基板4的底面分別配設接著層這種極爲麻煩的作業。此 外，在切割製程後由切割膠帶剝離的作業若與在切割製程 後於各半導體構成體2的矽基板4的底面分別配設接著層 -12- 1248654 的作業比較，則極爲簡單。 其次，針對使用如此得到的半導體構成體2，製造第1 圖所示的半導體封裝結構的情形的一例來說明。首先’如第 1 0圖所示並非以可採取複數片如第1圖所示的基底板1的 大小來限定的意思，而是準備平面形狀爲矩形形狀的基底 板1。其次，在基底板1的頂面的預定的複數個位置分別接 著接著於半導體構成體2的矽基板4的底面之接著層3。此 處的接著係藉由加熱加壓使接著層3正式硬化。
其次如第1 1圖所示，藉由網版印刷法、旋塗法、晶粒 塗佈法等，在包含半導體構成體2的基底板1的頂面全體 ’使由環氧系樹脂或聚醯亞胺系樹脂等的熱硬化性樹脂材 料構成的絕緣層1 4其厚度比半導體構成體2的高度還厚而 形成’藉由加熱使其硬化。因此在此狀態下，半導體構成 體2的頂面被絕緣層i 4覆蓋。
其次，藉由至少適宜地硏磨絕緣層1 4的頂面側，如第 1 2圖所示使柱狀電極1 2的頂面露出，且平坦化包含此露出 的柱狀電極12的頂面之密封膜13的頂面（即半導體構成體 2的頂面）以及絕緣層1 4的頂面。 其次如第1 3圖所示，在半導體構成體2以及絕緣層i 4 的頂面載置薄片狀的絕緣材料1 5 a。此情形絕緣材料丨5 a爲 預浸材較佳，此預浸材例如爲使環氧系樹脂等的熱硬化性 樹脂材料含浸於由玻璃等的無機材料構成的纖維，令該熱 硬化性樹脂材料爲半硬化狀態。此外，絕緣材料i 5a爲了 得到平坦性最好爲薄片狀，但未必限於預浸材，爲僅由不 -13- 1248654 包含有纖維的熱硬化性樹脂構成者也可以。 其次’在絕緣材料1 5 a的頂面、底面於至少對應柱狀 電極1 2的位置對位具有頭圓錐形狀的突起電極1 7的金屬 板1 6 a而配置。即配置於絕緣材料1 5 &的頂面，俾位於突 起電極1 7的前端部所對應的柱狀電極1 2的頂面中央部上 。此情形係未圖示，以附有真空吸附機構的熱壓接板吸附 金屬板1 6 a的頂面，使該熱壓接板移動於X方向、γ方向 以及Z方向（依照需要爲0 )而定位的話佳。此外，針對具 有突起電極1 7的金屬板1 6 a的形成方法，在之後說明。 其次’若藉由附有真空吸附機構的熱壓接板加熱以及 加壓金屬板1 6 a，則截頭圓錐形狀的突起電極1 7會侵入絕 緣材料15a內，如第14圖所示在深入絕緣材料15a且金屬 板16a的底面由絕緣材料15a的頂面多少深入內面的狀態 下對接於柱狀電極1 2的頂面中央部。而且，此時隔著金屬 板1 6 a加熱絕緣材料1 5 a，使該絕緣材料1 5 a中的熱硬化性 樹脂材料正式硬化。據此，金屬板1 6 a的突起電極1 7由絕 緣材料 1 5 a的頂面側到底面側深入其厚度方向全體，且在 金屬板1 6 a的底面附著於絕緣材料1 5 a的頂面的狀態下使 絕緣材料1 5 a硬化，故金屬板1 6 a與絕緣材料1 5 a的附著 強度大，據此，金屬板1 6 a的各突起電極1 7與柱狀電極1 2 % «性連接的可靠度提高。 其次’若藉由微影（photolithography)法形成金屬板16a 的圖案，則如第i 5圖所示在絕緣膜1 5的頂面形成有上層 配線1 6，如上述在此狀態下，上層配線1 6係經由深入絕緣 -14- 1248654 膜1 5的突起電極1 7確實地電性連接於柱狀電極1 2的頂面 其次，如第1 6圖所示藉由網版印刷法或旋塗法等，在 包含上層配線1 6的絕緣膜1 5的頂面全體形成由抗銲劑構 成的上層絕緣膜1 8。此情形在對應上層配線1 6的連接墊部 的部分中的上層絕緣膜1 8形成有開口部1 9。其次，在開口 部1 9內及其上方使錫球20連接於上層配線1 6的連接墊部 而形成。
其次，如第1 7圖所示在互相接鄰的半導體構成體2間 若切斷上層絕緣膜1 8、絕緣膜1 5、絕緣層1 4以及基底板 1，則可得到複數個第1圖所示的半導體封裝結構。
如以上，在上述製造方法中因使形成於金屬板1 6 a的 突起電極1 7深入絕緣膜1 5，連接於半導體構成體2的柱狀 電極1 2，然後形成金屬板1 6 a的圖案’形成上層配線1 6， 故無須在絕緣膜1 5形成層間連接用的開口部.，而且，由於 不是電解電鍍，故無須形成底層金屬層’或除去其不要的 部分，因此，可降低製程數，提高生產性。 而且，藉由絕緣膜1 5的頂面爲平坦’使在以後的製程 形成的上層配線1 6或錫球2 0的頂面的高度位置均等’可 提高結合時的可靠度。而且，可使形成金屬板的圖案而形 成的上層配線1 6的厚度均勻，並且可使上層配線1 6不發 生層差。 再者，在基底板1上隔著接著層3配置複數個半導體 構成體2，對複數個半導體構成體2總括地進行絕緣層1 4 -15- 1248654 、絕緣膜1 5、上層配線1 6、上層絕緣膜1 8以及錫球20的 形成，然後進行分割以得到複數個半導體封裝結構，故可使 製程簡略化。而且，在第1 2圖所示的製程以後中，因可與 基底板1 一起傳送複數個半導體構成體2，故據此也可使製 程簡略化。
其次，針對具有突起電極1 7的金屬板1 6 a的形成方法 來說明。此情形首先如第1 8圖所示在厚度一樣的金屬板1 6b 的頂面全體形成頂面光阻膜3 1，並且在底面的預定位置（即 突起電極17形成區域）形成平面圓形狀的底面光阻膜32。 其次，如第19圖所示若進行半濕式蝕刻（half wet etching) ，則藉由蝕刻等向地（isotropicly)進行，在不存在底面光阻 膜32的區域形成有厚度變薄的金屬板16a，且在此厚度變 薄的金屬板16a的底面中於存在底面光阻膜32的區域形成 有截頭圓錐形狀的突起電極1 7。其次，若除去兩光阻膜3 1 、32，則如第20圖所示得到具有突起電極17的金屬板16a
其次，針對具有突起電極1 7的金屬板1 6a的尺寸的一 例來說明。若令當初的金屬板16b的厚度爲100// m左右， 令突起電極17的高度爲80//m左右，則具有突起電極17 的金屬板16a的厚度爲20//m左右。而且，令突起電極17 的根部的直徑爲5 0 // m左右，令頭部的直徑爲2 0 // m左右 對於如此的情形，第1 3圖所示的絕緣材料1 5 a係使用 使環氧系樹脂含浸於玻璃纖維之例如等級FR-4的預浸材， -16- 1248654 並且若令其厚度對應突起電極17的高度爲80//m左右，則 在加熱溫度95〜1 15 °C的範圍中，可使突起電極17良好地 ί朱入此絕緣材料1 5 a。 突起電極1 7的其他形成方法係在金屬板的一面印刷由 銀膏（silver paste)等構成的導電膏，使其硬化以形成突起電 極也可以。在依照任何一個方法的情形中金屬板的厚度（配 線部分的厚度）爲1 0〜50// m，突起電極17的高度（由金屬板 面突出的高度）爲20〜150//m左右較佳。而且，並非限定的 意思，突起電極令其根部的直徑爲50〜400 // m，頭部的直 徑爲10〜2 00 // m左右（但是比根部的直徑還小）較佳。 在以上中，絕緣材料1 5 a的厚度若與突起電極1 7的高 度相同，或比其稍小的話佳。而且，金屬板1 6 a不限於由 銅的單層構成者，例如由鎳等的基底板與銅等的突起電極 形成板構成的兩層疊層構造者也可以。 而且，在上述實施形態中雖然對輝半導體構成體2上 及其周圍的絕緣層1 4上的全面排列成矩陣狀而配設錫球20 ，惟僅在對應半導體構成體2的周圍的絕緣層1 4上的區域 上配設錫球20也可以。此情形配設錫球20於半導體構成 體2的四邊之中僅一〜三邊的側方，而不是半導體構成體2 的全周圍也可以。而且，對於這種情形無須令絕緣層1 4爲 矩形框狀，僅配置於配設錫球20的邊的側方也可以。 (變形例） 在上述實施形態中，例如如第1圖所示係針對在絕緣 膜1 5上各形成一層上層配線1 6以及上層絕緣膜1 8的情形 -17- 1248654 來說明，惟不限於此以各兩層以上也可以’例如如第2 1圖 所示的變形例，以各兩層也可以。
即在半導體構成體2以及絕緣層1 4的頂面配設有由預 浸材等構成的第一上層絕緣膜4 1。在第一上層絕緣膜4 1的 頂面，第一上層配線42係經由深入第一上層絕緣膜41的 突起電極43連接於柱狀電極12的頂面而配設。在包含第 一上層配線42的第一上層絕緣膜4 1的頂面配設有由預浸 材等構成的第二上層絕緣膜44。在第二上層絕緣膜44的頂 面，第二上層配線4 5係經由深入第二上層絕緣膜44的突 起電極4 6連接於第一上層配線42的連接墊部頂面而配設 在包含第二上層配線4 5的第二上層絕緣膜44的頂面 配設有由抗銲劑等構成的第三上層絕緣膜47。在對應第二 上層配線45的連接墊部的部分中的第三上層絕緣膜47設 有開口部4 8。在開口部4 8內及其上方，錫球4 9係連接於 第二上層配線45的連接墊部而配設。
(其他變形例） 而且，在第1 7圖所示的情形雖然是在互相接鄰的半導 體構成體2間切斷，但不限於此，以兩個或兩個以上的半 導體構成體2爲一組切斷，例如如第22圖所示的其他變形 例’以兩個半導體構成體2爲一組切斷，以得到多晶片模 組（multichip module)型的半導體封裝結構也可以。此情形 以兩個爲一組的半導體構成體2爲同種或異種的任一個均 可。 -18- 1248654 (其他的實施形態） 在上述各實施形態中半導體構成體2係外部連接用電 極除了連接墊5外，以具有配線1 1、柱狀電極1 2者，但本 發明可適用於半導體構成體2的外部連接用電極僅具有連 接墊5者，或具有連接墊5以及具有連接墊部的配線1 1者 〇 【發明的功效】 如以上的說明，如果依照本發明因在由金屬板構成的 配線配設突起電極，在使此突起電極深入形成於外部連接 用電極上的絕緣膜的狀態下連接於外部連接用電極，故突 起電極與絕緣膜的附著強度提高，配線與外部連接用的電 極的電性連接的可靠度提高。 【圖式簡單說明】 第1圖是作爲本發明的第一實施形態的半導體封裝結 構的擴大剖面圖。 第2圖是在第1圖所示的半導體封裝結構的製造方法 的一例中，當初準備的擴大剖面圖。 第3圖是接著第2圖的製程的擴大剖面圖。 第4圖是接著第3圖的製程的擴大剖面圖。 第5圖是接著第4圖的製程的擴大剖面圖。 第6圖是接著第5圖的製程的擴大剖面圖。 第7圖是接著第6圖的製程的擴大剖面圖。 第8圖是接著第7圖的製程的擴大剖面圖。 第9圖是接著第8圖的製程的擴大剖面圖。 -19- 1248654 第1 〇圖是接著第9圖的製程的擴大剖面圖。 第11圖是接著第1 〇圖的製程的擴大剖面圖。 第1 2圖是接著第1 i圖的製程的擴大剖面圖。 第13圖是接著第12圖的製程的擴大剖面圖。 第1 4圖是接著第1 3圖的製程的擴大剖面圖。 第1 5圖是接著第1 4圖的製程的擴大剖面圖。 第1 6圖是接著第1 5圖的製程的擴大剖面圖。
第1 7圖是接著第1 6圖的製程的剖面圖。 第1 8圖是當具有突起電極的銅板的形成時，當初的製 程的擴大剖面圖。 第1 9圖是接著第1 8圖的製程的擴大剖面圖。 第20圖是接著第1 9圖的製程的擴大剖面圖。 ~ 第2 1圖是作爲本發明的變形例的半導體封裝結構的擴 ^ 大剖面圖。 第22圖是作爲本發明·的其他變形例的半導體封裝結構 的擴大剖面圖。 【符號說明】 φ 1 :基底板 2 :半導體構成體 3:接著層 4:矽基板 5:連接墊 6:絕緣膜 7、9、1 9、2 2、2 4、4 8 :開口部 -20- 1548654 8:保護膜 1 0 :底層金屬層 、 1 1:再配線 1 2 :柱狀電極 1 3 :密封膜 1 4 :絕緣層 1 5 :絕緣膜 1 5 a :絕緣材料 1 6 :上層再配線 φ 16a、 16b:金屬板 17、43、46: 突起電極 1 8 :上層絕緣膜 · 2 0、4 9 :錫球 _ 2 I > 2 3:電鍍光阻膜 3 1 :頂面光阻膜 3 2 :底面光阻膜 4 1 :第一上層絕緣膜 €1 4 2 :第一上層配線 44:第二上層絕緣膜 45:第二上層配線 47:第三上層絕緣膜 -21-

Claims (1)

  1. 1248654 十、申請專利範圍： 第93 1 1 4 1 95「半導體封裝結構及其製造方法」專利案 (2005年9月23日修正） 1 . 一種半導體封裝結構，其特徵包含： 至少一個半導體構成體（2)，具有配設於半導體基板（4) 上的複數個外部連接用電極（1 2); 絕緣膜（1 5)，覆蓋該半導體構成體（2);以及 配線（16)，具有突起電極（17)，形成於該絕緣膜（15) 上，其中 該配線（1 6)的突起電極（1 7)係以深入對應該外部連接 用電極（12)的該絕緣膜（15)的部分而連接於該外部連接用 電極（1 2 )。 2 ·如申請專利範圍第1項之半導體封裝結構，其中具備複數 個該半導體構成體（2)。 3 ·如申請專利範圍第1項之半導體封裝結構，其中該半導體 構成體（2)包含： 連接墊（5); 連接於該連接墊（5)的柱狀的外部連接用電極（1 2); 以及 配設於該外部連接用電極（12)的周圍的密封膜（13)。 4 ·如申請專利範圍第3項之半導體封裝結構，其中該半導體 構成體（2)包含有用以連接該連接墊（5)與該外部連接用電 極（1 2 )的配線（1 1 )。 5 ·如申請專利範圍第1項之半導體封裝結構，其中該絕緣膜 1248654 (15)爲薄片。 6·如申請專利範圍第5項之半導體封裝結構，其中該絕緣膜 (1 5 )的頂面爲平坦。 7.如申請專利範圍第1項之半導體封裝結構，其中該突起電 極（1 7 )係由一體形成於該配線（1 6 )的突起電極（1 7)所構成
    8·如申請專利範圍第〗項所述之半導體封裝結構，其中該突 起電極（17)係由藉由固著於該配線（16)的金屬膏形成的突 起電極（17)所構成。 9.如申請專利範圍第1項之半導體封裝結構，其中該突起電 極（17)係截頭圓錐形狀。 10.如申請專利範圍第1項之半導體封裝結構，其中該配線（16) 具有連接墊部，且具有覆蓋除了該連接墊部的部分的上 層絕緣膜（1 8)。 1 1 .如申請專利範圍第1項之半導體封裝結構，其中在該絕緣 膜（15)以及該配線（16)上具有：
    一層以上的上層的絕緣膜（44);以及 上層的配線（45)，形成於該各上層的絕緣膜（44)上， 連接於下層的配線（42)的連接墊部。 1 2.如申請專利範圍第11項之半導體封裝結構，其中具有覆 蓋除了該最上層的配線（45)的連接墊部的部分的上層的絕 緣膜（47)。 】3 ·如申請專利範圍第Π項之半導體封裝結構，其中該上層 的配線（45)的至少一部分具有突起電極（46)，該突起電極 -2- 1248654 (46)係深入該下層的絕緣膜（44)且連接於該下層的配線 (42)的連接墊部。 1 4.如申請專利範圍第1 1項之半導體封裝結構，其中在該最 上層的配線（4 5)的連接墊部上配設有錫球（49)。 15.如申請專利範圍第1項之半導體封裝結構，其中在該半導 體構成體（2)的周側面配設有絕緣層（1 4)。 1 6 ·如申請專利範圍第1 5項之半導體封裝結構，其中在該半 導體構成體（2)以及該絕緣層（14)的底面配設有基底板（1) 〇 17.—種半導體封裝結構的製造方法，其特徵包含： 以絕緣膜（15)覆蓋具有複數個外部連接用電極（12)的 半導體構成體（2)的頂面之製程； 在該絕緣膜（1 5)上配置具有對應該各外部連接用電極 (12)的突起電極（17)的金屬板（16a)之製程； 使該金屬板（1 6 a)的各突起電極（1 7 )深入該絕緣膜（1 5 ) ，連接於該各外部連接用電極（12)之製程；以及 將該金屬板（16a)圖案化，形成配線（16)之製程。 i 8.如申請專利範圍第17項之半導體封裝結構的製造方法， 其中該半導體構成體（2)包含： 連接墊（5); 連接於該連接墊（5)的柱狀的外部連接用電極（12); 以及 配設於該外部連接用電極（12)的周圍的密封膜（13)。 】9.如申請專利範圍第18項之半導體封裝結構的製造方法， 1248654 其中該半導體構成體（2)包含用以連接該連接墊（5)與該外 部連接用電極（12)的配線（η)。 2 0 ·如申請專利範圍第1 7項之半導體封裝結構的製造方法， 其中該絕緣膜（1 5 )爲薄片。 2 1 ·如申請專利範圍第2 0項之半導體封裝結構的製造方法， 其中該絕緣膜（1 5)的頂面爲平坦。 22·如申請專利範圍第17項之半導體封裝結構的製造方法， 其中使該金屬板（1 6 a)的突起電極（1 7 )深入該絕緣膜（〗5 )的 製程係在該絕緣膜（1 5)爲半硬化的狀態下進行，然後藉由 加熱使該絕緣膜（15)正式硬化，並且使該金屬板（1 6a)附 著於該絕緣膜（15)上。 2 3 .如申請專利範圍第1 7項之半導體封裝結構的製造方法， 其中藉由半蝕刻該金屬板（1 6 a)的底面，一體地且形成該 突起電極（17)爲截頭圓錐形狀於該金屬板（16a)下。 2 4 ·如申請專利範圍第1 7項之半導體封裝結構的製造方法， 其中於該金屬板（1 6 a)下印刷金屬膏，形成該突起電極（〗7) 爲截頭圓錐形狀。 2 5 ·如申請專利範圍第1 7項之半導體封裝結構的製造方法， 其中在以該絕緣膜（15)覆蓋該半導體構成體（2)的頂面之 製程前係具有： 在基底板（1)上使分別配設於半導體基板（4)上的具有 複數個外部連接用電極（12)的複數個半導體構成體（2)相 互分離而配置的製程；以及 在該各半導體構成體（2)的周側面形成絕緣層（14)的 1248654 製程， 然後，以該絕緣膜（1 5 )覆蓋該半導體構成體（2)以及 該絕緣層（14)的頂面。 2 6 .如申請專利範圍第2 5項之半導體封裝結構的製造方法， 其中在將該金屬板（1 6 a)圖案化以形成該配線（〗6)的製程 後’切斷該半導體構成體（2 )間的該絕緣膜（1 5 )以及該絕 緣層（1 4 )，分離成至少包含有一個該半導體構成體（2)的 半導體封裝結構。 27.如申請專利範圍第26項之半導體封裝結構的製造方法， 其中該切斷係包含有複數個該半導體構成體（2)而切斷。 2 8 ·如申請專利範圍第2 6項之半導體封裝結構的製造方法， 其中在該切斷製程切斷該絕緣膜（15)以及該絕緣層（14)， 並且切斷該基底板（1 )，該半導體封裝結構係得到具備該 基底板（1 )者。 29·如申請專利範圍第17項之半導體封裝結構的製造方法， 其中在將該金屬板（16a)圖案化以形成配線（16)的製程之 後係具有在該絕緣膜（15)以及該配線（16)上形成一層以上 的上層的絕緣膜（44)，與形成於該上層的絕緣膜（44)上， 連接於下層的配線（42)的連接墊部的上層的配線（45)之製 程。 3 0.如申請專利範圍第29項之半導體封裝結構的製造方法， 其中具有形成覆蓋除了該最上層的配線（45)的連接墊部的 部分的上層的絕緣膜（4 7)之製程。 3 1 .如申請專利範圍第2 9項之半導體封裝結構的製造方法， 其中具有該上層的配線（45)的至少一部分具有突起電極 1248654 (46)，該突起電極（46)係深入該下層的絕緣膜（44)，連接 於該下層的配線（42)的連接墊部之製程。 32.如申請專利範圍第29項之半導體封裝結構的製造方法， 其中具有在該最上層的配線（45)的連接墊部上形成錫球 (4 9 )之製程。
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