TWI247799B - Process solutions containing surfactants - Google Patents

Process solutions containing surfactants Download PDF

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Publication number
TWI247799B
TWI247799B TW092121575A TW92121575A TWI247799B TW I247799 B TWI247799 B TW I247799B TW 092121575 A TW092121575 A TW 092121575A TW 92121575 A TW92121575 A TW 92121575A TW I247799 B TWI247799 B TW I247799B
Authority
TW
Taiwan
Prior art keywords
process solution
substrate
surfactant
carbon atoms
straight
Prior art date
Application number
TW092121575A
Other languages
English (en)
Chinese (zh)
Other versions
TW200408700A (en
Inventor
Peng Zhang
Danielle Megan King
Eugene Joseph Karwacki Jr
Leslie Cox Barber
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/218,087 external-priority patent/US20040029395A1/en
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of TW200408700A publication Critical patent/TW200408700A/zh
Application granted granted Critical
Publication of TWI247799B publication Critical patent/TWI247799B/zh

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • G03F7/322Aqueous alkaline compositions
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0048Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/168Finishing the coated layer, e.g. drying, baking, soaking
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/38Treatment before imagewise removal, e.g. prebaking
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/425Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/3021Imagewise removal using liquid means from a wafer supported on a rotating chuck
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00Cleaning and liquid contact with solids
    • Y10S134/902Semiconductor wafer

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
TW092121575A 2002-08-12 2003-08-06 Process solutions containing surfactants TWI247799B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/218,087 US20040029395A1 (en) 2002-08-12 2002-08-12 Process solutions containing acetylenic diol surfactants
US10/339,709 US20040029396A1 (en) 2002-08-12 2003-01-09 Process solutions containing surfactants
US10/616,662 US7129199B2 (en) 2002-08-12 2003-07-10 Process solutions containing surfactants

Publications (2)

Publication Number Publication Date
TW200408700A TW200408700A (en) 2004-06-01
TWI247799B true TWI247799B (en) 2006-01-21

Family

ID=30773450

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092121575A TWI247799B (en) 2002-08-12 2003-08-06 Process solutions containing surfactants

Country Status (5)

Country Link
US (4) US7129199B2 (OSRAM)
EP (1) EP1389746A3 (OSRAM)
JP (2) JP4272013B2 (OSRAM)
KR (1) KR20040030253A (OSRAM)
TW (1) TWI247799B (OSRAM)

Families Citing this family (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040029395A1 (en) * 2002-08-12 2004-02-12 Peng Zhang Process solutions containing acetylenic diol surfactants
US7208049B2 (en) * 2003-10-20 2007-04-24 Air Products And Chemicals, Inc. Process solutions containing surfactants used as post-chemical mechanical planarization treatment
US7521405B2 (en) * 2002-08-12 2009-04-21 Air Products And Chemicals, Inc. Process solutions containing surfactants
US7129199B2 (en) 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
US7348300B2 (en) * 1999-05-04 2008-03-25 Air Products And Chemicals, Inc. Acetylenic diol ethylene oxide/propylene oxide adducts and processes for their manufacture
US7459005B2 (en) * 2002-11-22 2008-12-02 Akzo Nobel N.V. Chemical composition and method
JP4045180B2 (ja) * 2002-12-03 2008-02-13 Azエレクトロニックマテリアルズ株式会社 リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法
JP4426526B2 (ja) 2003-07-17 2010-03-03 ハネウエル・インターナシヨナル・インコーポレーテツド 最新式のマイクロエレクトロニクス用途およびデバイス用の平坦化膜およびそれらの製造方法
US7446051B2 (en) * 2003-09-09 2008-11-04 Csg Solar Ag Method of etching silicon
WO2005024959A1 (en) * 2003-09-09 2005-03-17 Csg Solar, Ag Adjustment of masks by re-flow
EP1665346A4 (en) * 2003-09-09 2006-11-15 Csg Solar Ag IMPROVED METHOD FOR FORMING OPENINGS IN AN ORGANIC RESIN MATERIAL
US7919445B2 (en) * 2004-03-30 2011-04-05 Basf Aktiengesellschaft Aqueous solution for removing post-etch residue
DE102004017440A1 (de) 2004-04-08 2005-11-03 Enthone Inc., West Haven Verfahren zur Behandlung von laserstrukturierten Kunststoffoberflächen
EP1598704B1 (en) 2004-05-17 2009-12-02 FUJIFILM Corporation Pattern forming method
JP4759311B2 (ja) * 2004-05-17 2011-08-31 富士フイルム株式会社 パターン形成方法
CN1973247A (zh) * 2004-05-27 2007-05-30 纳幕尔杜邦公司 光聚合物保护层的显影剂
US7312152B2 (en) * 2004-06-28 2007-12-25 Intel Corporation Lactate-containing corrosion inhibitor
US7611825B2 (en) * 2004-09-15 2009-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Photolithography method to prevent photoresist pattern collapse
US7232759B2 (en) * 2004-10-04 2007-06-19 Applied Materials, Inc. Ammonium hydroxide treatments for semiconductor substrates
US20060255315A1 (en) * 2004-11-19 2006-11-16 Yellowaga Deborah L Selective removal chemistries for semiconductor applications, methods of production and uses thereof
EP1824945A4 (en) * 2004-11-19 2008-08-06 Honeywell Int Inc CHEMICALS FOR SELECTIVE REMOVAL FOR SEMICONDUCTOR APPLICATIONS, METHODS OF MANUFACTURE AND IDOINE USES
US7732123B2 (en) 2004-11-23 2010-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion photolithography with megasonic rinse
US20060115774A1 (en) * 2004-11-30 2006-06-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method for reducing wafer charging during drying
KR100663354B1 (ko) * 2005-01-25 2007-01-02 삼성전자주식회사 포토레지스트 스트리퍼 조성물을 이용한 포토레지스트 제거공정을 갖는 반도체소자 제조방법들
JP4237184B2 (ja) * 2005-03-31 2009-03-11 エルピーダメモリ株式会社 半導体装置の製造方法
US20070087951A1 (en) * 2005-10-19 2007-04-19 Hynix Semiconductor Inc. Thinner composition for inhibiting photoresist from drying
JP2007219009A (ja) * 2006-02-14 2007-08-30 Az Electronic Materials Kk レジスト基板用処理液とそれを用いたレジスト基板の処理方法
JP4531726B2 (ja) * 2006-06-22 2010-08-25 Azエレクトロニックマテリアルズ株式会社 微細化されたレジストパターンの形成方法
JP4866165B2 (ja) * 2006-07-10 2012-02-01 大日本スクリーン製造株式会社 基板の現像処理方法および基板の現像処理装置
JP2008102343A (ja) 2006-10-19 2008-05-01 Az Electronic Materials Kk 現像済みレジスト基板処理液とそれを用いたレジスト基板の処理方法
JP5000260B2 (ja) * 2006-10-19 2012-08-15 AzエレクトロニックマテリアルズIp株式会社 微細化されたパターンの形成方法およびそれに用いるレジスト基板処理液
JP4554665B2 (ja) 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
US8637229B2 (en) * 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8530148B2 (en) * 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8034547B2 (en) * 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
KR100990106B1 (ko) 2007-04-13 2010-10-29 후지필름 가부시키가이샤 패턴형성방법, 이 패턴형성방법에 사용되는 레지스트 조성물, 현상액 및 린스액
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
US7985534B2 (en) * 2007-05-15 2011-07-26 Fujifilm Corporation Pattern forming method
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
JP4617337B2 (ja) * 2007-06-12 2011-01-26 富士フイルム株式会社 パターン形成方法
KR101452229B1 (ko) * 2007-06-12 2014-10-22 후지필름 가부시키가이샤 네가티브 톤 현상용 레지스트 조성물 및 이것을 사용한 패턴형성방법
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
JP4590431B2 (ja) * 2007-06-12 2010-12-01 富士フイルム株式会社 パターン形成方法
US20090253268A1 (en) * 2008-04-03 2009-10-08 Honeywell International, Inc. Post-contact opening etchants for post-contact etch cleans and methods for fabricating the same
CN201219685Y (zh) * 2008-04-16 2009-04-15 韩广民 组装结构产品及庭院椅
JP5306755B2 (ja) * 2008-09-16 2013-10-02 AzエレクトロニックマテリアルズIp株式会社 基板処理液およびそれを用いたレジスト基板処理方法
JP5476388B2 (ja) 2008-10-09 2014-04-23 アバントール パフォーマンス マテリアルズ, インコーポレイテッド 酸化銅エッチ残渣除去および、銅電着の防止のための水性の酸性洗浄用組成物
JP2010128464A (ja) 2008-12-01 2010-06-10 Az Electronic Materials Kk レジストパターン形成方法
US8216384B2 (en) * 2009-01-15 2012-07-10 Intermolecular, Inc. Combinatorial approach to the development of cleaning formulations for wet removal of high dose implant photoresist
WO2010088194A2 (en) 2009-01-28 2010-08-05 Advanced Technology Materials, Inc. Lithographic tool in situ clean formulations
US8614053B2 (en) 2009-03-27 2013-12-24 Eastman Chemical Company Processess and compositions for removing substances from substrates
US8444768B2 (en) 2009-03-27 2013-05-21 Eastman Chemical Company Compositions and methods for removing organic substances
US8309502B2 (en) 2009-03-27 2012-11-13 Eastman Chemical Company Compositions and methods for removing organic substances
JP5448536B2 (ja) 2009-04-08 2014-03-19 東京エレクトロン株式会社 レジスト塗布現像装置およびレジスト塗布現像方法、並びにレジスト膜処理装置およびレジスト膜処理方法
JP5193121B2 (ja) * 2009-04-17 2013-05-08 東京エレクトロン株式会社 レジスト塗布現像方法
JP5159738B2 (ja) * 2009-09-24 2013-03-13 株式会社東芝 半導体基板の洗浄方法および半導体基板の洗浄装置
US20110253171A1 (en) * 2010-04-15 2011-10-20 John Moore Chemical Composition and Methods for Removing Epoxy-Based Photoimageable Coatings Utilized In Microelectronic Fabrication
JP5591623B2 (ja) * 2010-08-13 2014-09-17 AzエレクトロニックマテリアルズIp株式会社 リソグラフィー用リンス液およびそれを用いたパターン形成方法
KR101266620B1 (ko) 2010-08-20 2013-05-22 다이닛뽕스크린 세이조오 가부시키가이샤 기판처리방법 및 기판처리장치
JP5771035B2 (ja) * 2011-03-29 2015-08-26 株式会社Screenホールディングス 基板処理方法および基板処理装置
JP5657318B2 (ja) * 2010-09-27 2015-01-21 富士フイルム株式会社 半導体基板用洗浄剤、これを利用した洗浄方法及び半導体素子の製造方法
JP5659873B2 (ja) 2010-12-16 2015-01-28 富士通株式会社 レジストパターン改善化材料、レジストパターンの形成方法、及び半導体装置の製造方法
WO2012101545A1 (en) * 2011-01-25 2012-08-02 Basf Se Use of surfactants having at least three short-chain perfluorinated groups for manufacturing integrated circuits having patterns with line-space dimensions below 50nm
JP5708071B2 (ja) 2011-03-11 2015-04-30 富士通株式会社 レジストパターン改善化材料、レジストパターンの形成方法、及び半導体装置の製造方法
KR101925272B1 (ko) * 2011-03-21 2019-02-27 바스프 에스이 질소-무함유 수성 세정 조성물, 이의 제조 및 용도
JP5705607B2 (ja) 2011-03-23 2015-04-22 メルクパフォーマンスマテリアルズIp合同会社 リソグラフィー用リンス液およびそれを用いたパターン形成方法
US20130040246A1 (en) * 2011-08-09 2013-02-14 Tokyo Electron Limited Multiple chemical treatment process for reducing pattern defect
US8987181B2 (en) * 2011-11-08 2015-03-24 Dynaloy, Llc Photoresist and post etch residue cleaning solution
US9097977B2 (en) 2012-05-15 2015-08-04 Tokyo Electron Limited Process sequence for reducing pattern roughness and deformity
KR102107367B1 (ko) 2012-07-10 2020-05-07 바스프 에스이 제미니 첨가제를 포함하는 항 패턴 붕괴 처리용 조성물
KR101993360B1 (ko) 2012-08-08 2019-06-26 삼성전자주식회사 포토 리소그래피용 린스액
JP6106990B2 (ja) * 2012-08-27 2017-04-05 富士通株式会社 リソグラフィ用リンス剤、レジストパターンの形成方法、及び半導体装置の製造方法
JP6012377B2 (ja) * 2012-09-28 2016-10-25 東京応化工業株式会社 レジストパターン形成方法
US9029268B2 (en) 2012-11-21 2015-05-12 Dynaloy, Llc Process for etching metals
US9660745B2 (en) * 2012-12-12 2017-05-23 At&T Intellectual Property I, L.P. Geocast-based file transfer
CN104871289B (zh) 2012-12-14 2017-10-10 巴斯夫欧洲公司 包含表面活性剂和疏水化剂的组合物在处理线间距尺寸为50nm或更低的图案化材料时避免图案崩塌的用途
US10170297B2 (en) * 2013-08-22 2019-01-01 Versum Materials Us, Llc Compositions and methods using same for flowable oxide deposition
KR20150051478A (ko) 2013-11-04 2015-05-13 삼성디스플레이 주식회사 포토레지스트 조성물 및 이를 이용한 박막 트랜지스터 표시판의 제조 방법
US10073351B2 (en) 2014-12-23 2018-09-11 Versum Materials Us, Llc Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation
US9873833B2 (en) 2014-12-29 2018-01-23 Versum Materials Us, Llc Etchant solutions and method of use thereof
US9482957B1 (en) * 2015-06-15 2016-11-01 I-Shan Ke Solvent for reducing resist consumption and method using solvent for reducing resist consumption
US9652841B2 (en) * 2015-07-06 2017-05-16 International Business Machines Corporation System and method for characterizing NANO/MICRO bubbles for particle recovery
CN106559086B (zh) * 2015-09-30 2019-02-15 努比亚技术有限公司 移动终端和无线通信方法
KR102507301B1 (ko) 2015-12-23 2023-03-07 삼성전자주식회사 포토리소그래피용 린스액 및 이를 이용한 집적회로 소자의 제조 방법
WO2017169834A1 (ja) 2016-03-31 2017-10-05 富士フイルム株式会社 半導体製造用処理液、及び、パターン形成方法
US11156920B2 (en) * 2016-11-25 2021-10-26 Merck Patent Gmbh Lithography composition, a method for forming resist patterns and a method for making semiconductor devices
TWI742246B (zh) * 2017-02-20 2021-10-11 日商富士軟片股份有限公司 藥液、藥液收容體及圖案形成方法
JP2019121795A (ja) * 2017-12-27 2019-07-22 花王株式会社 シリコンウェーハの製造方法
KR20190138743A (ko) * 2018-06-06 2019-12-16 도오꾜오까고오교 가부시끼가이샤 기판의 처리 방법 및 린스액
CN112292637A (zh) * 2018-06-22 2021-01-29 默克专利有限公司 光致抗蚀剂组合物、用于制造光致抗蚀剂涂层、经蚀刻的光致抗蚀剂涂层和经蚀刻的含硅层的方法以及制造使用其的器件的方法
JPWO2024203080A1 (OSRAM) * 2023-03-31 2024-10-03

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US55660A (en) * 1866-06-19 Improvement in gang-plows
US115022A (en) * 1871-05-23 Improvement in pulley-blocks
US4711917A (en) * 1985-02-07 1987-12-08 Ppg Industries, Inc. Cationic coating compositions for electrodeposition over rough steel
JPS6232453A (ja) * 1985-08-06 1987-02-12 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト用現像液
AU6629286A (en) 1985-11-27 1987-07-01 Macdermid, Inc. Thermally stabilized photoresist images
US4824763A (en) * 1987-07-30 1989-04-25 Ekc Technology, Inc. Triamine positive photoresist stripping composition and prebaking process
JPS6488547A (en) 1987-09-30 1989-04-03 Toshiba Corp Production of semiconductor device
JPH0188547U (OSRAM) 1987-12-03 1989-06-12
JP2670711B2 (ja) * 1990-05-29 1997-10-29 富士写真フイルム株式会社 ネガ型感光性樹脂組成物用現像液
US5279771A (en) * 1990-11-05 1994-01-18 Ekc Technology, Inc. Stripping compositions comprising hydroxylamine and alkanolamine
US6110881A (en) * 1990-11-05 2000-08-29 Ekc Technology, Inc. Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials
US5127571A (en) * 1991-10-31 1992-07-07 International Business Machines Corporation Water soluble soldering preflux and method of application
JPH07142349A (ja) 1993-11-16 1995-06-02 Mitsubishi Electric Corp 現像工程におけるフォトレジストパターンの倒れを防止する方法
CA2136373A1 (en) * 1993-11-29 1995-05-30 Steven W. Medina Ethoxylated acetylenic glycols having low dynamic surface tension
US5474877A (en) 1994-02-24 1995-12-12 Nec Corporation Method for developing a resist pattern
US5466389A (en) * 1994-04-20 1995-11-14 J. T. Baker Inc. PH adjusted nonionic surfactant-containing alkaline cleaner composition for cleaning microelectronics substrates
JPH088163A (ja) 1994-06-21 1996-01-12 Sony Corp パターン形成方法
JP3121743B2 (ja) 1994-08-10 2001-01-09 日立造船株式会社 プラズマ式溶融方法
JPH098163A (ja) 1995-06-22 1997-01-10 Nippon Avionics Co Ltd 半導体気密封止パッケージ
JP2911792B2 (ja) * 1995-09-29 1999-06-23 東京応化工業株式会社 レジスト用剥離液組成物
US5948464A (en) * 1996-06-19 1999-09-07 Imra America, Inc. Process of manufacturing porous separator for electrochemical power supply
US6030932A (en) 1996-09-06 2000-02-29 Olin Microelectronic Chemicals Cleaning composition and method for removing residues
JPH10171128A (ja) 1996-12-10 1998-06-26 Tokuyama Corp 濃厚テトラメチルアンモニウムハイドロキサイド水溶液
US5977041A (en) * 1997-09-23 1999-11-02 Olin Microelectronic Chemicals Aqueous rinsing composition
US6261466B1 (en) * 1997-12-11 2001-07-17 Shipley Company, L.L.C. Composition for circuit board manufacture
KR100610387B1 (ko) 1998-05-18 2006-08-09 말린크로트 베이커, 인코포레이티드 초소형 전자 기판 세정용 실리케이트 함유 알칼리성 조성물
JP3606738B2 (ja) * 1998-06-05 2005-01-05 東京応化工業株式会社 アッシング後の処理液およびこれを用いた処理方法
US6368421B1 (en) 1998-07-10 2002-04-09 Clariant Finance (Bvi) Limited Composition for stripping photoresist and organic materials from substrate surfaces
US6152148A (en) * 1998-09-03 2000-11-28 Honeywell, Inc. Method for cleaning semiconductor wafers containing dielectric films
US7129199B2 (en) 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
US20040029395A1 (en) 2002-08-12 2004-02-12 Peng Zhang Process solutions containing acetylenic diol surfactants
US6864395B2 (en) 1999-05-04 2005-03-08 Air Products And Chemicals, Inc. Acetylenic diol ethylene oxide/propylene oxide adducts and processes for their manufacture
US7348300B2 (en) * 1999-05-04 2008-03-25 Air Products And Chemicals, Inc. Acetylenic diol ethylene oxide/propylene oxide adducts and processes for their manufacture
US6313182B1 (en) * 1999-05-04 2001-11-06 Air Products And Chemicals, Inc. Acetylenic diol ethylene oxide/propylene oxide adducts and processes for their manufacture
US6455234B1 (en) * 1999-05-04 2002-09-24 Air Products And Chemicals, Inc. Acetylenic diol ethylene oxide/propylene oxide adducts and their use in photoresist developers
US7521405B2 (en) * 2002-08-12 2009-04-21 Air Products And Chemicals, Inc. Process solutions containing surfactants
JP2001033988A (ja) 1999-07-15 2001-02-09 Tokyo Ohka Kogyo Co Ltd ホトリソグラフィー用リンス液およびこれを用いた基板の処理方法
US6251745B1 (en) * 1999-08-18 2001-06-26 Taiwan Semiconductor Manufacturing Company Two-dimensional scaling method for determining the overlay error and overlay process window for integrated circuits
US6369146B1 (en) * 1999-10-26 2002-04-09 Air Products And Chemicals, Inc. Malic acid diester surfactants
JP2001215690A (ja) 2000-01-04 2001-08-10 Air Prod And Chem Inc アセチレン列ジオールエチレンオキシド/プロピレンオキシド付加物および現像剤におけるその使用
US6268115B1 (en) * 2000-01-06 2001-07-31 Air Products And Chemicals, Inc. Use of alkylated polyamines in photoresist developers
TW558736B (en) 2000-02-26 2003-10-21 Shipley Co Llc Method of reducing defects
US6310019B1 (en) * 2000-07-05 2001-10-30 Wako Pure Chemical Industries, Ltd. Cleaning agent for a semi-conductor substrate
WO2002023598A2 (en) 2000-09-15 2002-03-21 Infineon Technologies North America Corp. A method to reduce post-development defects without sacrificing throughput
US6599370B2 (en) * 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
US6451510B1 (en) 2001-02-21 2002-09-17 International Business Machines Corporation Developer/rinse formulation to prevent image collapse in resist
US6413914B1 (en) 2001-03-29 2002-07-02 Air Products And Chemicals, Inc. Low foam N,N′-dialkylmalamide wetting agents
JP2003010774A (ja) 2001-06-27 2003-01-14 Nippon Paint Co Ltd 金属材の塗装方法
MY131912A (en) * 2001-07-09 2007-09-28 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
US6656977B2 (en) * 2001-07-20 2003-12-02 Air Products And Chemical, Inc. Alkyl glycidyl ether-capped polyamine foam control agents
US6762208B2 (en) * 2001-10-01 2004-07-13 Air Products And Chemicals, Inc. Alkane diol foam controlling agents
US6641986B1 (en) 2002-08-12 2003-11-04 Air Products And Chemicals, Inc. Acetylenic diol surfactant solutions and methods of using same
JP4045180B2 (ja) 2002-12-03 2008-02-13 Azエレクトロニックマテリアルズ株式会社 リソグラフィー用リンス液およびそれを用いたレジストパターン形成方法
JP4085262B2 (ja) * 2003-01-09 2008-05-14 三菱瓦斯化学株式会社 レジスト剥離剤
US6951710B2 (en) * 2003-05-23 2005-10-04 Air Products And Chemicals, Inc. Compositions suitable for removing photoresist, photoresist byproducts and etching residue, and use thereof
DE602004009595T2 (de) * 2003-08-19 2008-07-24 Mallinckrodt Baker, Inc. Ablös- und reinigungszusammensetzungen für die mikroelektronik
TWI417683B (zh) * 2006-02-15 2013-12-01 Avantor Performance Mat Inc 用於微電子基板之穩定化,非水性清潔組合物
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
JP2010535422A (ja) * 2007-08-02 2010-11-18 アドバンスド テクノロジー マテリアルズ,インコーポレイテッド マイクロ電子デバイスから残渣を除去するための非フッ化物含有組成物
CN101855334B (zh) * 2007-11-13 2013-03-27 沙琛公司 高负电动势多面体倍半硅氧烷组合物及无损坏半导体湿式清洁方法
US20100105595A1 (en) * 2008-10-29 2010-04-29 Wai Mun Lee Composition comprising chelating agents containing amidoxime compounds
US8765653B2 (en) * 2009-07-07 2014-07-01 Air Products And Chemicals, Inc. Formulations and method for post-CMP cleaning

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US20070010409A1 (en) 2007-01-11
US20040053800A1 (en) 2004-03-18
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