TWI239541B - Temperature-compensated ferroelectric capacitor device, and its fabrication - Google Patents

Temperature-compensated ferroelectric capacitor device, and its fabrication Download PDF

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Publication number
TWI239541B
TWI239541B TW092126675A TW92126675A TWI239541B TW I239541 B TWI239541 B TW I239541B TW 092126675 A TW092126675 A TW 092126675A TW 92126675 A TW92126675 A TW 92126675A TW I239541 B TWI239541 B TW I239541B
Authority
TW
Taiwan
Prior art keywords
ferroelectric
temperature
capacitor
layer
negative temperature
Prior art date
Application number
TW092126675A
Other languages
English (en)
Chinese (zh)
Other versions
TW200414243A (en
Inventor
Thomas K Dougherty
John J Drab
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of TW200414243A publication Critical patent/TW200414243A/zh
Application granted granted Critical
Publication of TWI239541B publication Critical patent/TWI239541B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors

Landscapes

  • Semiconductor Memories (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW092126675A 2002-09-26 2003-09-25 Temperature-compensated ferroelectric capacitor device, and its fabrication TWI239541B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/256,446 US20040061990A1 (en) 2002-09-26 2002-09-26 Temperature-compensated ferroelectric capacitor device, and its fabrication

Publications (2)

Publication Number Publication Date
TW200414243A TW200414243A (en) 2004-08-01
TWI239541B true TWI239541B (en) 2005-09-11

Family

ID=32029278

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092126675A TWI239541B (en) 2002-09-26 2003-09-25 Temperature-compensated ferroelectric capacitor device, and its fabrication

Country Status (5)

Country Link
US (2) US20040061990A1 (https=)
JP (1) JP4638232B2 (https=)
KR (1) KR100807518B1 (https=)
TW (1) TWI239541B (https=)
WO (1) WO2004030100A1 (https=)

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US20070132065A1 (en) * 2005-12-08 2007-06-14 Su Jae Lee Paraelectric thin film structure for high frequency tunable device and high frequency tunable device with the same
US8368368B2 (en) * 2007-12-06 2013-02-05 Intersil Americas Inc. System and method for improving inductor current sensing accuracy of a DC/DC voltage regulator
JP5766011B2 (ja) * 2011-05-06 2015-08-19 京セラ株式会社 静電容量素子
JP6632522B2 (ja) 2013-09-25 2020-01-22 スリーエム イノベイティブ プロパティズ カンパニー 静電容量温度感知のための組成物、装置、及び方法
US10122357B2 (en) * 2016-11-14 2018-11-06 Ford Global Technologies, Llc Sensorless temperature compensation for power switching devices
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CN113314346A (zh) * 2021-06-07 2021-08-27 通号(北京)轨道工业集团有限公司轨道交通技术研究院 一种变容电容器
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Also Published As

Publication number Publication date
TW200414243A (en) 2004-08-01
JP4638232B2 (ja) 2011-02-23
WO2004030100A1 (en) 2004-04-08
KR100807518B1 (ko) 2008-02-26
US8053251B2 (en) 2011-11-08
KR20050070009A (ko) 2005-07-05
JP2006500785A (ja) 2006-01-05
US20040061990A1 (en) 2004-04-01
US20060189003A1 (en) 2006-08-24

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