TWD181481S - 反應管 - Google Patents

反應管

Info

Publication number
TWD181481S
TWD181481S TW105304215F TW105304215F TWD181481S TW D181481 S TWD181481 S TW D181481S TW 105304215 F TW105304215 F TW 105304215F TW 105304215 F TW105304215 F TW 105304215F TW D181481 S TWD181481 S TW D181481S
Authority
TW
Taiwan
Prior art keywords
main body
gas
slits
protruding portion
wall surface
Prior art date
Application number
TW105304215F
Other languages
English (en)
Chinese (zh)
Inventor
Hidenari Yoshida
Tomoshi Taniyama
Original Assignee
日立國際電氣股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立國際電氣股份有限公司 filed Critical 日立國際電氣股份有限公司
Publication of TWD181481S publication Critical patent/TWD181481S/zh

Links

TW105304215F 2015-09-04 2016-03-02 反應管 TWD181481S (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JPD2015-19682F JP1546512S (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2015-09-04 2015-09-04

Publications (1)

Publication Number Publication Date
TWD181481S true TWD181481S (zh) 2017-02-21

Family

ID=55522530

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105304215F TWD181481S (zh) 2015-09-04 2016-03-02 反應管

Country Status (3)

Country Link
US (1) USD791090S1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP1546512S (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TWD181481S (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017138087A1 (ja) 2016-02-09 2017-08-17 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
JP1605460S (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 2017-08-09 2021-05-31
JP1605461S (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 2017-08-10 2021-05-31
JP1605462S (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 2017-08-10 2021-05-31
JP1605982S (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 2017-12-27 2021-05-31
JP1644260S (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 2019-03-20 2019-10-28
USD931241S1 (en) * 2019-08-28 2021-09-21 Applied Materials, Inc. Lower shield for a substrate processing chamber
USD931823S1 (en) * 2020-01-29 2021-09-28 Kokusai Electric Corporation Reaction tube
JP1713189S (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 2021-09-15 2022-04-21
JP1713188S (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 2021-09-15 2022-04-21
JP1731877S (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 2022-03-01 2022-12-09
JP1731878S (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 2022-03-01 2022-12-09
JP1731789S (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 2022-03-01 2022-12-09
JP1731671S (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 2022-03-15 2022-12-08
JP1731672S (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 2022-03-15 2022-12-08
JP1731674S (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 2022-05-30 2022-12-08
JP1731675S (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 2022-05-30 2022-12-08
JP1731673S (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 2022-05-30 2022-12-08

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KR890008922A (ko) * 1987-11-21 1989-07-13 후세 노보루 열처리 장치
USD406113S (en) * 1997-01-31 1999-02-23 Tokyo Electron Limited Processing tube for use in a semiconductor wafer heat processing apparatus
USD405429S (en) * 1997-01-31 1999-02-09 Tokyo Electron Limited Processing tube for use in a semiconductor wafer heat processing apparatus
USD423463S (en) * 1997-01-31 2000-04-25 Tokyo Electron Limited Quartz process tube
USD424024S (en) * 1997-01-31 2000-05-02 Tokyo Electron Limited Quartz process tube
USD417438S (en) * 1997-01-31 1999-12-07 Tokyo Electron Limited Quartz outer tube
USD405062S (en) * 1997-08-20 1999-02-02 Tokyo Electron Ltd. Processing tube for use in a semiconductor wafer heat processing apparatus
USD405431S (en) * 1997-08-20 1999-02-09 Tokyo Electron Ltd. Tube for use in a semiconductor wafer heat processing apparatus
US5948300A (en) * 1997-09-12 1999-09-07 Kokusai Bti Corporation Process tube with in-situ gas preheating
JP2000243747A (ja) * 1999-02-18 2000-09-08 Kokusai Electric Co Ltd 基板処理装置
JP3985899B2 (ja) * 2002-03-28 2007-10-03 株式会社日立国際電気 基板処理装置
JP5157100B2 (ja) * 2006-08-04 2013-03-06 東京エレクトロン株式会社 成膜装置及び成膜方法
TWD124997S1 (zh) * 2006-09-12 2008-09-21 東京威力科創股份有限公司 半導體製程用管件
TWD125600S1 (zh) * 2006-10-12 2008-10-21 東京威力科創股份有限公司 半導體製造用加工處理管
TWD125601S (zh) * 2007-05-08 2008-10-21 東京威力科創股份有限公司 半導體製造用加工處理管
JP5096182B2 (ja) * 2008-01-31 2012-12-12 東京エレクトロン株式会社 熱処理炉
TWD143034S1 (zh) * 2008-03-28 2011-10-01 東京威力科創股份有限公司 半導體製造用處理管
JP4930438B2 (ja) * 2008-04-03 2012-05-16 東京エレクトロン株式会社 反応管及び熱処理装置
TWD133943S1 (zh) * 2008-05-09 2010-03-21 日立國際電氣股份有限公司 反應管
USD610559S1 (en) * 2008-05-30 2010-02-23 Hitachi Kokusai Electric, Inc. Reaction tube
USD725053S1 (en) * 2011-11-18 2015-03-24 Tokyo Electron Limited Outer tube for process tube for manufacturing semiconductor wafers
USD739832S1 (en) * 2013-06-28 2015-09-29 Hitachi Kokusai Electric Inc. Reaction tube
TWD167985S (zh) * 2013-06-28 2015-05-21 日立國際電氣股份有限公司 反應管之部分
TWD167987S (zh) * 2013-06-28 2015-05-21 日立國際電氣股份有限公司 反應管之部分
TWD168774S (zh) * 2013-06-28 2015-07-01 日立國際電氣股份有限公司 反應管之部分
TWD167986S (zh) * 2013-06-28 2015-05-21 日立國際電氣股份有限公司 反應管之部分
JP1535455S (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 2015-02-25 2015-10-19
JP1546345S (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 2015-09-04 2016-03-22

Also Published As

Publication number Publication date
USD791090S1 (en) 2017-07-04
JP1546512S (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2016-03-22

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