TWD175119S - 反應管 - Google Patents

反應管

Info

Publication number
TWD175119S
TWD175119S TW104304617F TW104304617F TWD175119S TW D175119 S TWD175119 S TW D175119S TW 104304617 F TW104304617 F TW 104304617F TW 104304617 F TW104304617 F TW 104304617F TW D175119 S TWD175119 S TW D175119S
Authority
TW
Taiwan
Prior art keywords
gas
supplied
main body
body wall
slits
Prior art date
Application number
TW104304617F
Other languages
English (en)
Inventor
Hidenari Yoshida
Tomoshi Taniyama
Original Assignee
日立國際電氣股份有限公司
Hitachi Int Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立國際電氣股份有限公司, Hitachi Int Electric Inc filed Critical 日立國際電氣股份有限公司
Publication of TWD175119S publication Critical patent/TWD175119S/zh

Links

Abstract

【物品用途】;本物品是在將複數片基板以複數片排列成多層來進行處理的基板處理裝置中所使用的反應管。;【設計說明】;在以圓筒狀為基礎的主體的外周面，在圖式中正面側與背面側分別相對的位置形成有將氣體進行供/排氣的突出部。在該突出部的內側區劃有複數的空間，在與該區劃空間相對的主體壁面形成有供/排氣用的狹縫，當從背面側的突出部供給氣體時，則從主體壁面的狹縫將氣體供給到主體內部，從相反側的主體壁面的狹縫將氣體朝正面側的突出部排出。;圖式中各立體圖中所表示的細線，用來表示立體表面的特定形狀。
TW104304617F 2015-02-25 2015-08-24 反應管 TWD175119S (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JPD2015-3957F JP1535455S (zh) 2015-02-25 2015-02-25

Publications (1)

Publication Number Publication Date
TWD175119S true TWD175119S (zh) 2016-04-21

Family

ID=54293783

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104304617F TWD175119S (zh) 2015-02-25 2015-08-24 反應管

Country Status (3)

Country Link
US (1) USD772824S1 (zh)
JP (1) JP1535455S (zh)
TW (1) TWD175119S (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP1548462S (zh) * 2015-09-04 2016-04-25
JP1546512S (zh) * 2015-09-04 2016-03-22
WO2017138087A1 (ja) * 2016-02-09 2017-08-17 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
JP1605460S (zh) * 2017-08-09 2021-05-31
JP1605461S (zh) * 2017-08-10 2021-05-31
JP1605462S (zh) * 2017-08-10 2021-05-31
JP1605982S (zh) * 2017-12-27 2021-05-31
JP1644260S (zh) * 2019-03-20 2019-10-28
USD931823S1 (en) * 2020-01-29 2021-09-28 Kokusai Electric Corporation Reaction tube
JP1678273S (ja) * 2020-03-10 2021-02-01 反応管
JP1713188S (zh) * 2021-09-15 2022-04-21
JP1731789S (zh) * 2022-03-01 2022-12-09
JP1731877S (zh) * 2022-03-01 2022-12-09
JP1731878S (zh) * 2022-03-01 2022-12-09
JP1731673S (zh) * 2022-05-30 2022-12-08
JP1731675S (zh) * 2022-05-30 2022-12-08
JP1731674S (zh) * 2022-05-30 2022-12-08

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD405429S (en) * 1997-01-31 1999-02-09 Tokyo Electron Limited Processing tube for use in a semiconductor wafer heat processing apparatus
USD424024S (en) * 1997-01-31 2000-05-02 Tokyo Electron Limited Quartz process tube
USD417438S (en) * 1997-01-31 1999-12-07 Tokyo Electron Limited Quartz outer tube
USD406113S (en) * 1997-01-31 1999-02-23 Tokyo Electron Limited Processing tube for use in a semiconductor wafer heat processing apparatus
USD423463S (en) * 1997-01-31 2000-04-25 Tokyo Electron Limited Quartz process tube
USD405062S (en) * 1997-08-20 1999-02-02 Tokyo Electron Ltd. Processing tube for use in a semiconductor wafer heat processing apparatus
USD405431S (en) * 1997-08-20 1999-02-09 Tokyo Electron Ltd. Tube for use in a semiconductor wafer heat processing apparatus
US5948300A (en) * 1997-09-12 1999-09-07 Kokusai Bti Corporation Process tube with in-situ gas preheating
JP3985899B2 (ja) * 2002-03-28 2007-10-03 株式会社日立国際電気 基板処理装置
USD521464S1 (en) * 2003-11-04 2006-05-23 Tokyo Electron Limited Process tube for semiconductor device manufacturing apparatus
JP5157100B2 (ja) * 2006-08-04 2013-03-06 東京エレクトロン株式会社 成膜装置及び成膜方法
USD600659S1 (en) * 2006-09-12 2009-09-22 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
USD586768S1 (en) * 2006-10-12 2009-02-17 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
JP5096182B2 (ja) * 2008-01-31 2012-12-12 東京エレクトロン株式会社 熱処理炉
USD611013S1 (en) * 2008-03-28 2010-03-02 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
JP4930438B2 (ja) * 2008-04-03 2012-05-16 東京エレクトロン株式会社 反応管及び熱処理装置
USD618638S1 (en) * 2008-05-09 2010-06-29 Hitachi Kokusai Electric, Inc. Reaction tube
USD610559S1 (en) * 2008-05-30 2010-02-23 Hitachi Kokusai Electric, Inc. Reaction tube
TWD167987S (zh) * 2013-06-28 2015-05-21 日立國際電氣股份有限公司 反應管之部分
USD739832S1 (en) * 2013-06-28 2015-09-29 Hitachi Kokusai Electric Inc. Reaction tube
TWD168774S (zh) * 2013-06-28 2015-07-01 日立國際電氣股份有限公司 反應管之部分
TWD167986S (zh) * 2013-06-28 2015-05-21 日立國際電氣股份有限公司 反應管之部分
TWD167985S (zh) * 2013-06-28 2015-05-21 日立國際電氣股份有限公司 反應管之部分

Also Published As

Publication number Publication date
USD772824S1 (en) 2016-11-29
JP1535455S (zh) 2015-10-19

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