TWD181481S - 反應管 - Google Patents

反應管

Info

Publication number
TWD181481S
TWD181481S TW105304215F TW105304215F TWD181481S TW D181481 S TWD181481 S TW D181481S TW 105304215 F TW105304215 F TW 105304215F TW 105304215 F TW105304215 F TW 105304215F TW D181481 S TWD181481 S TW D181481S
Authority
TW
Taiwan
Prior art keywords
main body
gas
slits
protruding portion
wall surface
Prior art date
Application number
TW105304215F
Other languages
English (en)
Inventor
Hidenari Yoshida
Tomoshi Taniyama
Original Assignee
日立國際電氣股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立國際電氣股份有限公司 filed Critical 日立國際電氣股份有限公司
Publication of TWD181481S publication Critical patent/TWD181481S/zh

Links

Abstract

【物品用途】;本設計的物品是在將複數片基板排列成多層來進行處理的基板處理裝置中所使用的反應管。;【設計說明】;在以圓筒狀為基礎的主體的外周面上,在圖式中分別與正面側及背面側相對的位置上形成有將氣體進行供氣/排氣的突出部。在該突出部的內側隔間成複數的空間,在與該隔間空間相對的主體壁面上形成有供氣/排氣用的狹縫,從背面側的突出部被供給氣體的話,就從主體壁面的狹縫將氣體供給到主體內部,並從相反側的主體壁面的狹縫將氣體朝正面側的突出部排出。;立體圖1、立體圖2及G-G、H-H放大立體圖中,未呈現於其他六面圖的細線,皆為用來表示立體表面的形狀。
TW105304215F 2015-09-04 2016-03-02 反應管 TWD181481S (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JPD2015-19682F JP1546512S (zh) 2015-09-04 2015-09-04

Publications (1)

Publication Number Publication Date
TWD181481S true TWD181481S (zh) 2017-02-21

Family

ID=55522530

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105304215F TWD181481S (zh) 2015-09-04 2016-03-02 反應管

Country Status (3)

Country Link
US (1) USD791090S1 (zh)
JP (1) JP1546512S (zh)
TW (1) TWD181481S (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017138087A1 (ja) 2016-02-09 2017-08-17 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
JP1605460S (zh) * 2017-08-09 2021-05-31
JP1605461S (zh) * 2017-08-10 2021-05-31
JP1605462S (zh) * 2017-08-10 2021-05-31
JP1605982S (zh) * 2017-12-27 2021-05-31
JP1644260S (zh) * 2019-03-20 2019-10-28
USD931241S1 (en) * 2019-08-28 2021-09-21 Applied Materials, Inc. Lower shield for a substrate processing chamber
USD931823S1 (en) * 2020-01-29 2021-09-28 Kokusai Electric Corporation Reaction tube
JP1713189S (zh) * 2021-09-15 2022-04-21
JP1713188S (zh) * 2021-09-15 2022-04-21
JP1731789S (zh) * 2022-03-01 2022-12-09
JP1731877S (zh) * 2022-03-01 2022-12-09
JP1731878S (zh) * 2022-03-01 2022-12-09
JP1731674S (zh) * 2022-05-30 2022-12-08
JP1731675S (zh) * 2022-05-30 2022-12-08
JP1731673S (zh) * 2022-05-30 2022-12-08

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR890008922A (ko) * 1987-11-21 1989-07-13 후세 노보루 열처리 장치
USD406113S (en) * 1997-01-31 1999-02-23 Tokyo Electron Limited Processing tube for use in a semiconductor wafer heat processing apparatus
USD424024S (en) * 1997-01-31 2000-05-02 Tokyo Electron Limited Quartz process tube
USD417438S (en) * 1997-01-31 1999-12-07 Tokyo Electron Limited Quartz outer tube
USD423463S (en) * 1997-01-31 2000-04-25 Tokyo Electron Limited Quartz process tube
USD405429S (en) * 1997-01-31 1999-02-09 Tokyo Electron Limited Processing tube for use in a semiconductor wafer heat processing apparatus
USD405062S (en) * 1997-08-20 1999-02-02 Tokyo Electron Ltd. Processing tube for use in a semiconductor wafer heat processing apparatus
USD405431S (en) * 1997-08-20 1999-02-09 Tokyo Electron Ltd. Tube for use in a semiconductor wafer heat processing apparatus
US5948300A (en) * 1997-09-12 1999-09-07 Kokusai Bti Corporation Process tube with in-situ gas preheating
JP2000243747A (ja) * 1999-02-18 2000-09-08 Kokusai Electric Co Ltd 基板処理装置
JP3985899B2 (ja) * 2002-03-28 2007-10-03 株式会社日立国際電気 基板処理装置
JP5157100B2 (ja) * 2006-08-04 2013-03-06 東京エレクトロン株式会社 成膜装置及び成膜方法
USD600659S1 (en) * 2006-09-12 2009-09-22 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
TWD125600S1 (zh) * 2006-10-12 2008-10-21 東京威力科創股份有限公司 半導體製造用加工處理管
USD619630S1 (en) * 2007-05-08 2010-07-13 Tokyo Electron Limited Process tube for manufacturing semiconductor wafers
JP5096182B2 (ja) * 2008-01-31 2012-12-12 東京エレクトロン株式会社 熱処理炉
TWD143034S1 (zh) * 2008-03-28 2011-10-01 東京威力科創股份有限公司 半導體製造用處理管
JP4930438B2 (ja) * 2008-04-03 2012-05-16 東京エレクトロン株式会社 反応管及び熱処理装置
TWD133943S1 (zh) * 2008-05-09 2010-03-21 日立國際電氣股份有限公司 反應管
USD610559S1 (en) * 2008-05-30 2010-02-23 Hitachi Kokusai Electric, Inc. Reaction tube
USD725053S1 (en) * 2011-11-18 2015-03-24 Tokyo Electron Limited Outer tube for process tube for manufacturing semiconductor wafers
TWD167986S (zh) * 2013-06-28 2015-05-21 日立國際電氣股份有限公司 反應管之部分
TWD167987S (zh) * 2013-06-28 2015-05-21 日立國際電氣股份有限公司 反應管之部分
TWD167985S (zh) * 2013-06-28 2015-05-21 日立國際電氣股份有限公司 反應管之部分
USD739832S1 (en) * 2013-06-28 2015-09-29 Hitachi Kokusai Electric Inc. Reaction tube
TWD168774S (zh) * 2013-06-28 2015-07-01 日立國際電氣股份有限公司 反應管之部分
JP1535455S (zh) * 2015-02-25 2015-10-19
JP1546345S (zh) * 2015-09-04 2016-03-22

Also Published As

Publication number Publication date
JP1546512S (zh) 2016-03-22
USD791090S1 (en) 2017-07-04

Similar Documents

Publication Publication Date Title
TWD181481S (zh) 反應管
TWD180125S (zh) 反應管之部分
TWD175119S (zh) 反應管
TWD175855S (zh) 電漿處理裝置用下腔室
TWD181303S (zh) 晶圓載具
TWD175852S (zh) 電漿處理裝置用上腔室
TWD181306S (zh) 晶圓載具
TWD149063S (zh) 半導體製造裝置用擋板
TWD176076S (zh) 基板處理裝置用氣體供給噴嘴
TWD180288S (zh) 電漿處理裝置用上腔室
JP2017157678A5 (zh)
JP2015183224A5 (zh)
TWD134865S1 (zh) 隔膜閥
TWD197465S (zh) 半導體製造裝置用密封材
TWD200073S (zh) 反應管
TWD198069S (zh) 基板處理裝置用氣體供給噴嘴
TWD203444S (zh) 基板處理裝置用氣體導入管
TWD176440S (zh) 排氣處理裝置用內筒
MY172257A (en) Non-contact transfer hand
TWD191628S (zh) Air supply nozzle for substrate processing apparatus
TWD198926S (zh) 基板處理裝置用氣體供給噴嘴
TWD197467S (zh) 基板處理裝置用氣體導入管
TWD166710S (zh) 反應管
JP1705341S (ja) 空気清浄機
TWD219557S (zh) 基板處理設備用反應器壁