TWD181481S - 反應管 - Google Patents
反應管Info
- Publication number
- TWD181481S TWD181481S TW105304215F TW105304215F TWD181481S TW D181481 S TWD181481 S TW D181481S TW 105304215 F TW105304215 F TW 105304215F TW 105304215 F TW105304215 F TW 105304215F TW D181481 S TWD181481 S TW D181481S
- Authority
- TW
- Taiwan
- Prior art keywords
- main body
- gas
- slits
- protruding portion
- wall surface
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 2
- 238000005192 partition Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
Abstract
【物品用途】;本設計的物品是在將複數片基板排列成多層來進行處理的基板處理裝置中所使用的反應管。;【設計說明】;在以圓筒狀為基礎的主體的外周面上,在圖式中分別與正面側及背面側相對的位置上形成有將氣體進行供氣/排氣的突出部。在該突出部的內側隔間成複數的空間,在與該隔間空間相對的主體壁面上形成有供氣/排氣用的狹縫,從背面側的突出部被供給氣體的話,就從主體壁面的狹縫將氣體供給到主體內部,並從相反側的主體壁面的狹縫將氣體朝正面側的突出部排出。;立體圖1、立體圖2及G-G、H-H放大立體圖中,未呈現於其他六面圖的細線,皆為用來表示立體表面的形狀。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPD2015-19682F JP1546512S (zh) | 2015-09-04 | 2015-09-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
TWD181481S true TWD181481S (zh) | 2017-02-21 |
Family
ID=55522530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105304215F TWD181481S (zh) | 2015-09-04 | 2016-03-02 | 反應管 |
Country Status (3)
Country | Link |
---|---|
US (1) | USD791090S1 (zh) |
JP (1) | JP1546512S (zh) |
TW (1) | TWD181481S (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017138087A1 (ja) | 2016-02-09 | 2017-08-17 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
JP1605460S (zh) * | 2017-08-09 | 2021-05-31 | ||
JP1605461S (zh) * | 2017-08-10 | 2021-05-31 | ||
JP1605462S (zh) * | 2017-08-10 | 2021-05-31 | ||
JP1605982S (zh) * | 2017-12-27 | 2021-05-31 | ||
JP1644260S (zh) * | 2019-03-20 | 2019-10-28 | ||
USD931241S1 (en) * | 2019-08-28 | 2021-09-21 | Applied Materials, Inc. | Lower shield for a substrate processing chamber |
USD931823S1 (en) * | 2020-01-29 | 2021-09-28 | Kokusai Electric Corporation | Reaction tube |
JP1713189S (zh) * | 2021-09-15 | 2022-04-21 | ||
JP1713188S (zh) * | 2021-09-15 | 2022-04-21 | ||
JP1731789S (zh) * | 2022-03-01 | 2022-12-09 | ||
JP1731877S (zh) * | 2022-03-01 | 2022-12-09 | ||
JP1731878S (zh) * | 2022-03-01 | 2022-12-09 | ||
JP1731674S (zh) * | 2022-05-30 | 2022-12-08 | ||
JP1731675S (zh) * | 2022-05-30 | 2022-12-08 | ||
JP1731673S (zh) * | 2022-05-30 | 2022-12-08 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR890008922A (ko) * | 1987-11-21 | 1989-07-13 | 후세 노보루 | 열처리 장치 |
USD406113S (en) * | 1997-01-31 | 1999-02-23 | Tokyo Electron Limited | Processing tube for use in a semiconductor wafer heat processing apparatus |
USD424024S (en) * | 1997-01-31 | 2000-05-02 | Tokyo Electron Limited | Quartz process tube |
USD417438S (en) * | 1997-01-31 | 1999-12-07 | Tokyo Electron Limited | Quartz outer tube |
USD423463S (en) * | 1997-01-31 | 2000-04-25 | Tokyo Electron Limited | Quartz process tube |
USD405429S (en) * | 1997-01-31 | 1999-02-09 | Tokyo Electron Limited | Processing tube for use in a semiconductor wafer heat processing apparatus |
USD405062S (en) * | 1997-08-20 | 1999-02-02 | Tokyo Electron Ltd. | Processing tube for use in a semiconductor wafer heat processing apparatus |
USD405431S (en) * | 1997-08-20 | 1999-02-09 | Tokyo Electron Ltd. | Tube for use in a semiconductor wafer heat processing apparatus |
US5948300A (en) * | 1997-09-12 | 1999-09-07 | Kokusai Bti Corporation | Process tube with in-situ gas preheating |
JP2000243747A (ja) * | 1999-02-18 | 2000-09-08 | Kokusai Electric Co Ltd | 基板処理装置 |
JP3985899B2 (ja) * | 2002-03-28 | 2007-10-03 | 株式会社日立国際電気 | 基板処理装置 |
JP5157100B2 (ja) * | 2006-08-04 | 2013-03-06 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
USD600659S1 (en) * | 2006-09-12 | 2009-09-22 | Tokyo Electron Limited | Process tube for manufacturing semiconductor wafers |
TWD125600S1 (zh) * | 2006-10-12 | 2008-10-21 | 東京威力科創股份有限公司 | 半導體製造用加工處理管 |
USD619630S1 (en) * | 2007-05-08 | 2010-07-13 | Tokyo Electron Limited | Process tube for manufacturing semiconductor wafers |
JP5096182B2 (ja) * | 2008-01-31 | 2012-12-12 | 東京エレクトロン株式会社 | 熱処理炉 |
TWD143034S1 (zh) * | 2008-03-28 | 2011-10-01 | 東京威力科創股份有限公司 | 半導體製造用處理管 |
JP4930438B2 (ja) * | 2008-04-03 | 2012-05-16 | 東京エレクトロン株式会社 | 反応管及び熱処理装置 |
TWD133943S1 (zh) * | 2008-05-09 | 2010-03-21 | 日立國際電氣股份有限公司 | 反應管 |
USD610559S1 (en) * | 2008-05-30 | 2010-02-23 | Hitachi Kokusai Electric, Inc. | Reaction tube |
USD725053S1 (en) * | 2011-11-18 | 2015-03-24 | Tokyo Electron Limited | Outer tube for process tube for manufacturing semiconductor wafers |
TWD167986S (zh) * | 2013-06-28 | 2015-05-21 | 日立國際電氣股份有限公司 | 反應管之部分 |
TWD167987S (zh) * | 2013-06-28 | 2015-05-21 | 日立國際電氣股份有限公司 | 反應管之部分 |
TWD167985S (zh) * | 2013-06-28 | 2015-05-21 | 日立國際電氣股份有限公司 | 反應管之部分 |
USD739832S1 (en) * | 2013-06-28 | 2015-09-29 | Hitachi Kokusai Electric Inc. | Reaction tube |
TWD168774S (zh) * | 2013-06-28 | 2015-07-01 | 日立國際電氣股份有限公司 | 反應管之部分 |
JP1535455S (zh) * | 2015-02-25 | 2015-10-19 | ||
JP1546345S (zh) * | 2015-09-04 | 2016-03-22 |
-
2015
- 2015-09-04 JP JPD2015-19682F patent/JP1546512S/ja active Active
-
2016
- 2016-02-25 US US29/555,822 patent/USD791090S1/en active Active
- 2016-03-02 TW TW105304215F patent/TWD181481S/zh unknown
Also Published As
Publication number | Publication date |
---|---|
JP1546512S (zh) | 2016-03-22 |
USD791090S1 (en) | 2017-07-04 |
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