TW543173B - Lead frame, semiconductor device using the same and method of producing the semiconductor device - Google Patents

Lead frame, semiconductor device using the same and method of producing the semiconductor device Download PDF

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Publication number
TW543173B
TW543173B TW091111605A TW91111605A TW543173B TW 543173 B TW543173 B TW 543173B TW 091111605 A TW091111605 A TW 091111605A TW 91111605 A TW91111605 A TW 91111605A TW 543173 B TW543173 B TW 543173B
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TW
Taiwan
Prior art keywords
lead frame
semiconductor device
pair
island
electrode
Prior art date
Application number
TW091111605A
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English (en)
Inventor
Takekazu Tanaka
Original Assignee
Nec Electronics Corp
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Filing date
Publication date
Application filed by Nec Electronics Corp filed Critical Nec Electronics Corp
Application granted granted Critical
Publication of TW543173B publication Critical patent/TW543173B/zh

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    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L23/495—Lead-frames or other flat leads
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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Description

543173 五、發明說明（1) 【發明背景】 1 · 發明領域 本餐明係關於一種引線框架、使用此弓丨線框架之半導 體裝置、及半導體裝置之製造方法。 2.相關技藝之說明 _ 使半導體裝置緻密安裝於電路板中之半導體裝置之微 小化需求與曰倶增。為了降低半導體裝置之尺寸，時常使 用QFN(Quad Flat Non-leaded Package ，四方平坦無引線 封裝）、S0N(Small 〇utline Non_leaded Package^、，，、小輪 廓無引線封裝）、以及其他所謂的無引線封裝。雖然益 線封裝如同習知的半導體裝置使用引線框架，但1使… 框架從半導體料之底面突出，藉以降低安裝面積使引線 诊從電路板上方看不見外界電極之無引線封裝令人& :二：而’當引線框架需要從半導體封裝之二 應该儘可能地抑制突出程度。 大出¥， 對於使用無引線封裝之半導體裝置而古，每 在製造中藉由樹脂片保護外部電極。具俨古之，乂通常 樹月旨密封承載有半導體晶片並遭受配線‘二的二，片於 m ^止樹脂漏出，藉以確保後續之電鍍。因而，樹浐^架時 半導體裝置或產品之構成元件。因$ pi曰片益非 曰加丰導體哀置之製造成本，使得降乂其 加啟切。 $低製&成本之需要更 再者，纟習知的半導體裝置中，弓丨線權架中構成電極
第4頁 543173 五、發明說明（2) 部之部分露出於封步 y τ Τ衣之側面上。因此杏*、皆 側之方式安裝至雷跋士士 田半導體裝皆 Λ Μ μ 4 >電路板守，必須保證足夠置以侧對 甶於例如相鄰丰寡鲈 幻見的空戸弓 半導_ # # 2 ί 置間之焊料所w起之銪^間以避免 牛導體衣置緻雄、安裝至電路板。 丑路。此阻礙 【發明概述】 本發明之一目的在於提供一 成本降低與緻密安裝、使用此引 半導體裝置之製造方法。 依據本發明，本發明之引線 一實質上平坦的底面；以及一島 該基部之頂面一體成形。 且，依 裝有一 配線連 電極。該島部 每一個係部分 更且，依 以使一引線框 上，其開始於 線框架 半導體 樹脂密 括該島 據本發明， 半導體晶片 接至形成於 與該複數個 地從該密封 據本發明， 架之表面部 一安裝步驟 中之一島部 晶片之表面 封該引線框 部、該半導 一種半 ;以及 該半導 電極部 樹脂之 一種半 分地露 ，用以 上。藉 上之複 架之頂 體晶片 種引線框架，徐 線框架之半著: 框架包括··一其 部與-電極部T 具有 W分地和 導體裝置包括·— 複數個電極部，it部* 表面上之複數個t由街封樹脂所密封同時 底面突出。 導體裝置之製造方法，用 出於該半導體裝置之底面 ，裝一半導體晶片至包括 著複數條接合配線連接形 數個電極與一電極部。藉 面之一部分與底面之一部 、该電極部、以及該接合 曝 第5頁 543173 五、發明說明（3) 配線。繼而，以平行該引線框架之該底面之方式研磨該密 封樹脂之位於該引線框架下方之整個表面。最後，使該引 線框架之該底面之一部分露出於該密封樹脂之底面上。 【較佳實施例之詳細說明】 本發明之前述與其他目的、特徵、以及優點將因下文 附有圖示之詳細說明而更加明顯。 為更佳地瞭解本發明，將說明習知的使用引線框架之 _ 半‘體I置及其製造方法。圖1係顯示習知的具有無引線 封裝組態之半導體裝置5。如圖所示，半導體裝置5包括構 成引線框架1之島部1 3與電極部1 2。島部1 3與電極部1 2皆 部份地露出至密封樹脂3之外，形成外部電極4。半導體晶 片2經由例如銀膠或Au-Si共熔合金所進行之接合而安裝於 島部13之頂面。藉由密封樹脂3使半導體晶芊 1密封在一起。 ，、Ή踝I木 金配線或類似的接合配線21連接著排列於半導 Λ頂面上之電極與形成電極部12之引線框架。「頂面曰」 :“密封樹脂3所密封之半導體裝置5 、 同樣地，下文將出現的「底面」係指半導：表一面 面，其中外部電極4於該表面處露出至'^ 义 半導體裝置5安裝至未圖示的電路 成者忒表面於 面。如前所述，外部電極“== =電路板之表 部12之底面上。島部13與電極部12因卩&面上與電極 茲將參照圖2A至2F說明圖i所大'f裝之外。 所不之丰導體裝置5之製造
第6頁 五、發明說明（4) 。首先，如圖2A所示，包括有島部13與 ^框架1藉著使預計將形成外部電極 ^ 頂面。如圖2Β所示，樹脂片6黏附至外二至島广3之 侍經由安置樹脂片使之成為黏附表 4之底面。此 框架1至樹月旨片6们寻㈣寸表面與朝’然後黏附引線 對，隨後經由接合使半導體晶片之底面彼此面 完成。繼而，如圖2C所示，在半至島部^之頂面而 極與電極邱】2之頂而Μ丄社人 隨曰日片2之頂面上之電 电枉412之頂面猎由接合配線2 ^ 如圖2D所示，在配線接合步驟 連接 之引線框架1與半導體晶片2由宓後，位於樹脂片6上 時’樹脂片6 P方止密封樹脂3漏：外::：3 :封在-起。此 而，如圖2E所示’樹脂片6從封繁。電極4之底面。繼 示，除了外部電極4向下突出之Γ剝離。最後，如圖2F所 ^。此後接著切割密封樹脂3:::二裝之底面气 +導體裝置5。 辦引線框架1，藉以完成 如前所述，在半導體裝置5 部電極4。具體言之，當承載1造中，樹脂片6保護外 由密封樹脂3所密封時，樹脂片6導體晶片2之引線框架1 保電鍍步驟。然而，樹脂片1曰主方止樹脂3漏出，藉以確 造成本。 Φ貝且増加半導體裝置5之製 3Β係 視圖 參照圖3Α與3Β， 分別顯示專用以 與側剖面圖。下 說明實施本發明 闡明實施例之單 文中所出現的「 之引線框架。圖3Α與 位引線框架1之頂面 頂面」與「底面」係 543173 五、發明說明（5) 分別指面對著其上將安裝引線框架與使用引線框架之半、曾 體裝置的電路板之表面以及對向於前述表面之表面。 ^ 如圖3 A與3 B所示’引線框架包括一對基部1 1與延伸於 一個基部1 1上方之一島部1 3。引線框架1係由金屬所形； 成。電極部12係形成於基部11上。具體言之，電極部^與 島部1 3應該最好形成於基部1 1之頂面上和基部丨丨一體成 型。
在圖3 A所示之引線框架1中，未圖示的半導體晶片將 安置於每一島部1 3上。因而，引線框架1通常係建構成同 ^製造二個半導體裝置。具體言之，基部U突出至引線框 架1之外部。因而，如圖3 B所示，電極部丨2與島部i 3之側 剖面通常為L形。 、雖然在圖3 A與3 B中每一島部1 3被顯示成從基部11突出 或：么吊路出其底面’但此一組態僅為闡示用。關鍵點係 基f 11之頂面露出於引線框架1外部與島部丨3間以及引線 框架1外部與電極部12間。「外部」係指預計將形成單一 半導體封裝之引線框架之末端方向，亦即，有關將被密封 之引，框架中之得形成半導體封裝之表面之末端。
制i兹將參照圖4至11說明使用引線框架1之半導體裝置之 衣& 1寺定程序。圖4 A係顯示具有圖3 A所示之組態之二個引 線框架1，以側對側方式配置於一對基部11之相對側。圖 係底面視圖，而圖4C與4D係侧剖面圖。如圖4 A所示，該 、 狂序猎由將圖3A之引線框架1作為一單元來處理而製 造半導體裝置。
第8頁 543173 五、發明說明（6) --- 首先，如圖5A至5C所示，半導體晶片2藉著銀膠、 Au-Si共晶合金、或類似的接合之媒介而安裝至每一島部 13。繼而，形成於半導體晶片2之表面上之電極與引線框 架1之電極部1 2藉由接合配線而連接。 如圖6 A至6D所示，如前所述，承載有半導體晶片2之 引線框架1由密封樹脂3所密封。本發明之程序之特徵之一 係藉著密封樹脂3密封包括其底面之整個引線框架1。 如圖7A至7C所示，完全由密封樹脂3所密封之引線框 架1 (下文稱為半導體封裝）從底面處開始研磨。當引線框 架1已路出至外界時停止研磨。繼而，在涵蓋圖8 A中之粗 體點虛線所指示之區域上方進行半導體封裝之半切切割 (half-cut dicing)。圖 8B 與 8(:係沿著圖 8A 之線 A —A，與 B-B之剖面，係顯示切割而成的半導體封裝。如圖8β所 示’以島部1 3之底面受保護之方式切割封裝之底面上之密 封樹脂3。亦且，如圖8C所示，島部丨3係建構成連接一對 基部11 ’使得密封樹脂3係以島部1 3之底面受保護之方式 被切割，如同圖8 β 一般。 如圖9Α所示，藉由半切切割步驟而露出於封裝之底面 上之基部丨丨之表面遭受電鍍。此時，如圖9Β與9C所示，島 部1 3之底面未受到電鍍。 在電鑛步驟之後，再次在涵蓋圖1 〇 Α之粗體點虛線所 指示之區域上方進行該封裝之半切切割。具體言之，形成 有電極部1 2之基部11與形成有電極部丨2與島部丨3之基部 11 ( %纟繫部分）被半切切割。結果，密封樹脂3依據電極部
第9頁 543173 五、發明說明（7) 12存在之區域而露出於封裝之底面上。以此方式，本發明 之程序使引線框架1之將露出於封裝之侧面之突出部形成 於封裝之底面上。此允許在用於形成外部電極且用於移除 前述突出部時之蝕刻作用於相同之方向。 μ 圖10Β與10C係分別沿著圖1(U之線Α_Α，與Β —Β，之剖 面。如圖所示，前述程序可形成外部電極4於封裝之底面 上，無須擔心露出於封裝之側面上之引線框架丨。此係因 為將依據電極部1 2之組態而切割之基部丨丨之突出部在 電極4形成之前即形成。 口 最後，如圖1 1 Α至1 1 D所示，密封樹脂3受到全切切判 (一fuU-cut dicing)，藉以製造半導體裝置5。圖ΐΐβ係顯 不將被全切切割之區域，亦即，由粗體點虛線之，、， 域之底視圖。圖11A係顯示封裝中之切割分 視圖。圖11B與11C係分別沿著圖11A之線a_a，與B — B刀
面。 乂^口 J 如圖11C^1D所不，相較於外部電極 雨述程序提供邊劑部份給僅有密封樹脂3 伤， 而可基於例如全切切割位置而提供且隹夂邛伤。因 之封裝。倘若密封樹脂3之全切切割*译可所期望之尺寸 半切切割寬度，則引線框架1之—部：；二於引線框架1之 的半導體裝置之側Φ;倘若前者寬度m在最^產生 引線框架1之一部分可露出於半導體裝置、曼者見度，則 前述的研磨、半切切割、半切與之伽I面。 互替換，以配合於所期望的半導體裝置。、刀割技術得相
543173 五、發明說明（8) 綜上所 架之半導體 所未見之優 (1 )應 可用來防止 迄今為止用 著地降低製 (2) 引 相鄰半導體 (3) 電 具有足夠大 半切切割係 研磨密封樹 然後研磨密 間。全切切 (4) 每 極部之部份 接在一起之 底面間之位 (5) 由 脂片之需要 (6) 不 基於半切切 (7) 電 述’本發明提 裝置、及半導 點’列舉如下 用至引線框架 引線框架露出 來保護外部電 造成本。 線框架並未部 裝置間之距離 極部與島部係 的強度來抵抗 指設定一預先 脂，例如：藉 封樹脂之底面 割係指切割密 一基部係由下 、一其上形成 部分。此連接 置關係。 切割或研磨所 ，因而降低製 僅半導體裝置 割寬度而自由 鑛係於半切切 供一種 體裝置 〇 之底面 於半導 極之昂 分地從 ，藉以 與基部 半切切 選擇的 著密封 以形成 封樹脂 列元件 有島部 部分確 引線框架 之製造方 用以形成 體裝置之 貴樹脂片 封裝之側 促進緻密 一體成型 吾! J、磨 深度然後 樹脂密封 一間距於 、N使用此引線框 具有各種前 h #電極之钱刻 側面上。此消除 之需要，藉以顯 面突出。此降低 安裝。 W線框架因而 或類似製程。 士刀割引線框架或 整個引線框架， 露：出的外部電極 所組成：一其上形成有電 之部份、以及一將他們連 保電極部之底面與島部之 形成的外部電極亦消除了昂貴樹 造成本。 可緻密地排列於電路板上，亦可 選擇間距。 割之後應用至基部，因而僅應用 543173
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543173 圖式簡單說明 圖1係顯示習知的引線框架與使用習知的引線框架之 半導體裝置之剖面圖； 圖2A至2F係顯示製造習知的半導體裝置之各順序之步 驟； 圖3A與3B係顯示實施本發明之引線框架之圖；以及 圖4A 至4D 、5A 至5C 、6A 至6D 、7A 至7C 、8A 至8C 、9A 至 9C、10A至10C、以及11A至1 1D係顯示使用圖3A與3B之引線 框架之半導體裝置之製造之特定程序。 【符號說明】 1 引線框架 2 半導體晶片 3 樹脂 4 外部電極 5 半導體裝置 6 樹脂片 11 基部 12 電極部 13 島部 21 接合配線

Claims (1)

  1. 543173 六、申請專利範圍 1. 一種引線框架，包含： 一基部，具有一實質上平坦的底面；以及 一島部與一電極部，部分地和該基部之一頂面一體形 成。 2. —種引線框架，包含： 一對基部，其中每一個具有一實質上平坦的底面； 一對電極部，其中每一個至少部分地和該對基部中之 一個之一頂面一體成形；以及 馨 一島部，至少部分地和該對基部之二頂面一體成形， 使該二頂面彼此連接。 3. 如申請專利範圍第1項之引線框架，其中該對基部之每 一個係由下列元件所組成：一位於該島部下方之部份；一 位於該對電極部中相關連之一個之下方之部份；以及一連 接前述二部分之部份。 4. 一種半導體裝置，包含： Φ 一島部，其上安裝有一半導體晶片；以及 複數個電極部，藉由複數條接合配線連接至形成於該 半導體晶片之一表面上之複數個電極； 其中該島部與該複數個電極部係由密封樹脂所密封， 同時每一個係部分地從該密封樹脂之一底面突出。
    第14頁 543173 六、申請專利範圍 5. 一種半導體裝置之製造方法，用以使一引線框架之一 表面部分地露出於該半導體裝置之一底面上，該方法包含 下列步驟： 安裝一半導體晶片至包括於該引線框架中之一島部 上； 藉著複數條接合配線連接形成於該半導體晶片之一表 面上之複數個電極與一電極部； 藉著密封樹脂密封該引線框架之一頂面之一部分與一 底面之一部分，包括該島部、該半導體晶片、該電極部、 以及該接合配線； 以平行於該引線框架之該底面之方式研磨該密封樹脂 之位於該引線框架下方之整個表面；以及 使該引線框架之該底面之一部分露出於該密封樹脂之 一底面上。 6. 如申請專利範圍第5項之半導體裝置之製造方法，其中 該引線框架包含：
    一基部，具有一實質上平坦的底面，並且 該島部與該電極部係部分地和該基部之一頂面一體成 形。 7. 如申請專利範圍第5項之半導體裝置之製造方法，其中 該引線框架包含： 一對基部，其中每一個具有一實質上平坦的底面；
    第15頁 543173 六、申請專利範圍 一對電極部，其中每一個至少部分地和該對基部中之 一個之一頂面一體成形；並且 該島部至少部分地和該對基部之二頂面一體成形，使 該二頂面彼此連接。 8. 一種半導體裝置之製造方法，用以使一引線框架之一 表面部分地露出於該半導體裝置之一底面上，該方法包含 下列步驟： 安裝一半導體晶片至包括於該引線框架中之一島部 上； 藉著複數條接合配線連接形成於該半導體晶片之一表 面上之複數個電極與一電極部； 藉著密封樹脂密封該引線框架之一頂面之一部分與一 底面之一部分，包括該島部、該半導體晶片、該電極部、 以及該接合配線； 以平行於該引線框架之該底面之方式研磨該密封樹脂 之位於該引線框架下方之整個表面；以及 使該引線框架之該底面之一部分露出於該密封樹脂之 一底面上； 半切切割該島部之一底面； 電鍍露出於該半導體裝置之該底面上之該引線框架之 該底面與該島部之該底面；以及 藉由半切切割方式切割一連接部分，該連接部分係形 成該引線框架之一基部之一部分。
    第16頁 543173 六、申請專利範圍 9. 如申請專利範圍第8項之半導體裝置之製造方法，其中 該引線框架包含： 一基部，具有一實質上平坦的底面，並且 該島部與該電極部係部份地和該基部之一頂面一體成 形。 10. 如申請專利範圍第8項之半導體裝置之製造方法，其 中該引線框架包含： 一對基部，其中每一個具有一實質上平坦的底面； 一對電極部，其中每一個至少部分地和該對基部之一 頂面一體成形；並且 該島部至少部分地和該對基部之二頂面一體成形，使 該二頂面彼此連接。
    第17頁
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