TW540047B - Semiconductor device - Google Patents

Semiconductor device Download PDF

Info

Publication number
TW540047B
TW540047B TW089109905A TW89109905A TW540047B TW 540047 B TW540047 B TW 540047B TW 089109905 A TW089109905 A TW 089109905A TW 89109905 A TW89109905 A TW 89109905A TW 540047 B TW540047 B TW 540047B
Authority
TW
Taiwan
Prior art keywords
potential
circuit
power supply
power
node
Prior art date
Application number
TW089109905A
Other languages
English (en)
Chinese (zh)
Inventor
Hiroshi Kato
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW540047B publication Critical patent/TW540047B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/28—Supervision thereof, e.g. detecting power-supply failure by out of limits supervision
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/153—Arrangements in which a pulse is delivered at the instant when a predetermined characteristic of an input signal is present or at a fixed time interval after this instant

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Dram (AREA)
  • Power Sources (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW089109905A 1999-08-12 2000-05-23 Semiconductor device TW540047B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22839399A JP4308985B2 (ja) 1999-08-12 1999-08-12 半導体装置

Publications (1)

Publication Number Publication Date
TW540047B true TW540047B (en) 2003-07-01

Family

ID=16875775

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089109905A TW540047B (en) 1999-08-12 2000-05-23 Semiconductor device

Country Status (4)

Country Link
US (1) US6340902B1 (enExample)
JP (1) JP4308985B2 (enExample)
KR (1) KR100352966B1 (enExample)
TW (1) TW540047B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5041631B2 (ja) * 2001-06-15 2012-10-03 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP3853195B2 (ja) * 2001-10-29 2006-12-06 株式会社ルネサステクノロジ 半導体装置
JP2003229490A (ja) * 2002-02-05 2003-08-15 Matsushita Electric Ind Co Ltd 半導体装置とその電源断検査方法
US7046016B2 (en) * 2002-10-22 2006-05-16 Tokyo Electron Limited Potential fixing device, potential fixing method, and capacitance measuring instrument
JP4184104B2 (ja) * 2003-01-30 2008-11-19 株式会社ルネサステクノロジ 半導体装置
JP2007109337A (ja) * 2005-10-14 2007-04-26 Elpida Memory Inc 半導体メモリ装置及びメモリモジュール
KR20140066391A (ko) 2012-11-23 2014-06-02 삼성전자주식회사 서든 파워 오프 감지 회로를 포함하는 불휘발성 메모리 장치 및 그것의 서든 파워 오프 감지 방법
US12405622B2 (en) * 2023-07-17 2025-09-02 Qualcomm Incorporated Voltage detector in data communication interface

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4617473A (en) * 1984-01-03 1986-10-14 Intersil, Inc. CMOS backup power switching circuit
JPH04285437A (ja) 1991-03-12 1992-10-09 Fujitsu Ltd 停電検出装置
JPH06140499A (ja) 1992-10-27 1994-05-20 Toyota Motor Corp 半導体集積回路
JPH06208423A (ja) * 1993-01-12 1994-07-26 Mitsubishi Electric Corp 電源回路
US5510735A (en) * 1994-12-29 1996-04-23 Motorola, Inc. Comparator circuit for generating a control signal corresponding to a difference voltage between a battery voltage and a power supply voltage
JPH10135424A (ja) 1996-11-01 1998-05-22 Mitsubishi Electric Corp 半導体集積回路装置
KR19980034730A (ko) * 1996-11-08 1998-08-05 김영환 외부 인터페이스 전압 자동검출 반도체 장치
JPH10290526A (ja) 1997-04-14 1998-10-27 Denso Corp 車載コンピュータの電源装置

Also Published As

Publication number Publication date
KR100352966B1 (ko) 2002-09-18
JP2001057074A (ja) 2001-02-27
JP4308985B2 (ja) 2009-08-05
KR20010020881A (ko) 2001-03-15
US6340902B1 (en) 2002-01-22

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees