TW321740B - - Google Patents

Download PDF

Info

Publication number
TW321740B
TW321740B TW085111060A TW85111060A TW321740B TW 321740 B TW321740 B TW 321740B TW 085111060 A TW085111060 A TW 085111060A TW 85111060 A TW85111060 A TW 85111060A TW 321740 B TW321740 B TW 321740B
Authority
TW
Taiwan
Prior art keywords
signal
address
circuit
memory device
semiconductor memory
Prior art date
Application number
TW085111060A
Other languages
English (en)
Chinese (zh)
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Application granted granted Critical
Publication of TW321740B publication Critical patent/TW321740B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
TW085111060A 1995-09-13 1996-09-10 TW321740B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23574395A JPH0982085A (ja) 1995-09-13 1995-09-13 半導体記憶装置

Publications (1)

Publication Number Publication Date
TW321740B true TW321740B (enExample) 1997-12-01

Family

ID=16990571

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085111060A TW321740B (enExample) 1995-09-13 1996-09-10

Country Status (4)

Country Link
US (1) US5831930A (enExample)
JP (1) JPH0982085A (enExample)
KR (1) KR100263843B1 (enExample)
TW (1) TW321740B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1116357A (ja) * 1997-06-23 1999-01-22 Toshiba Microelectron Corp 半導体装置
JPH1145594A (ja) * 1997-07-30 1999-02-16 Nec Ic Microcomput Syst Ltd 半導体記憶装置
US6707320B2 (en) * 2001-11-30 2004-03-16 Sun Microsystems, Inc. Clock detect indicator
KR100598114B1 (ko) * 2005-01-25 2006-07-10 삼성전자주식회사 페이지 모드 동작을 수행하는 반도체 메모리 장치
KR100756966B1 (ko) * 2006-09-26 2007-09-07 현대자동차주식회사 차량용 콘솔 결합구조
KR20120106145A (ko) * 2011-03-17 2012-09-26 삼성전자주식회사 어드레스 변환 회로 및 이를 포함하는 반도체 메모리 장치
JP2020093346A (ja) 2018-12-13 2020-06-18 川崎重工業株式会社 冷却装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4271487A (en) * 1979-11-13 1981-06-02 Ncr Corporation Static volatile/non-volatile ram cell
JPS59221891A (ja) * 1983-05-31 1984-12-13 Toshiba Corp スタテイツク型半導体記憶装置
JPH0762958B2 (ja) * 1983-06-03 1995-07-05 株式会社日立製作所 Ｍｏｓ記憶装置
US4710648A (en) * 1984-05-09 1987-12-01 Hitachi, Ltd. Semiconductor including signal processor and transient detector for low temperature operation
FR2619939B1 (fr) * 1987-09-01 1989-12-08 Thomson Semiconducteurs Circuit de detection de transitions d'adresses
KR930006970B1 (ko) * 1990-11-30 1993-07-24 현대전자산업 주식회사 어드레스 천이 검출회로
JPH0541088A (ja) * 1991-08-06 1993-02-19 Nec Ic Microcomput Syst Ltd 半導体集積回路
JP2696026B2 (ja) * 1991-11-21 1998-01-14 株式会社東芝 半導体記憶装置
JPH05159577A (ja) * 1991-12-10 1993-06-25 Oki Electric Ind Co Ltd アドレス入力遷移検出回路およびこれを形成する連想メモリセル回路
JP2845414B2 (ja) * 1992-09-18 1999-01-13 シャープ株式会社 半導体読み出し専用メモリ
JPH07141889A (ja) * 1993-06-22 1995-06-02 Sharp Corp 半導体記憶装置

Also Published As

Publication number Publication date
US5831930A (en) 1998-11-03
JPH0982085A (ja) 1997-03-28
KR100263843B1 (ko) 2000-09-01
KR970017609A (ko) 1997-04-30

Similar Documents

Publication Publication Date Title
TW512344B (en) SDRAM having posted CAS function of JEDEC standard
KR101329018B1 (ko) 임베딩된 메모리에서 비트 라인 프리차지
US5257236A (en) Static RAM
EP0230960A2 (en) Microcomputer having a highspeed operation mode and a low-speed operation mode
CN102148052A (zh) 存储器电路及其控制电路装置
KR880003328A (ko) 반도체 메모리장치
TW321740B (enExample)
TW452799B (en) Synchronous semiconductor memory device with a clock generating circuit
WO2008131086A1 (en) Systems and devices for implementing sub-threshold memory devices
TW508581B (en) Integrated memory
TW476070B (en) Semiconductor memory device and write data masking method thereof
TWI276111B (en) Method and circuit for controlling operation mode of PSRAM
US7440335B2 (en) Contention-free hierarchical bit line in embedded memory and method thereof
TW300998B (enExample)
TW503398B (en) Semiconductor device and semiconductor device testing method
TW540060B (en) Power saving on the fly during reading of data from a memory device
US7016239B2 (en) Leakage tolerant register file
TW512517B (en) Semiconductor integrated circuit device
TW514922B (en) Decoder circuit in a flash memory device
KR970049568A (ko) 순차엑세스를 위한 메모리장치
JP3999356B2 (ja) 同期式ランダムアクセスメモリの制御方法とその装置、及びそれを有する同期式ランダムアクセスメモリ装置
TW319839B (en) dynamic logic compatible register file cell
US7274620B2 (en) Semiconductor memory device
US7058756B2 (en) Circuit for implementing special mode in packet-based semiconductor memory device
TW388884B (en) Data read circuit

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees