KR100263843B1 - 반도체기억장치 - Google Patents

반도체기억장치 Download PDF

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Publication number
KR100263843B1
KR100263843B1 KR1019960039434A KR19960039434A KR100263843B1 KR 100263843 B1 KR100263843 B1 KR 100263843B1 KR 1019960039434 A KR1019960039434 A KR 1019960039434A KR 19960039434 A KR19960039434 A KR 19960039434A KR 100263843 B1 KR100263843 B1 KR 100263843B1
Authority
KR
South Korea
Prior art keywords
signal
address
circuit
output
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019960039434A
Other languages
English (en)
Korean (ko)
Other versions
KR970017609A (ko
Inventor
야스히로 홋타
Original Assignee
마찌다 가쯔히꼬
샤프 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마찌다 가쯔히꼬, 샤프 가부시키가이샤 filed Critical 마찌다 가쯔히꼬
Publication of KR970017609A publication Critical patent/KR970017609A/ko
Application granted granted Critical
Publication of KR100263843B1 publication Critical patent/KR100263843B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
KR1019960039434A 1995-09-13 1996-09-12 반도체기억장치 Expired - Fee Related KR100263843B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP23574395A JPH0982085A (ja) 1995-09-13 1995-09-13 半導体記憶装置
JP95-235743 1995-09-13

Publications (2)

Publication Number Publication Date
KR970017609A KR970017609A (ko) 1997-04-30
KR100263843B1 true KR100263843B1 (ko) 2000-09-01

Family

ID=16990571

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960039434A Expired - Fee Related KR100263843B1 (ko) 1995-09-13 1996-09-12 반도체기억장치

Country Status (4)

Country Link
US (1) US5831930A (enExample)
JP (1) JPH0982085A (enExample)
KR (1) KR100263843B1 (enExample)
TW (1) TW321740B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210097185A (ko) 2018-12-13 2021-08-06 카와사키 주코교 카부시키 카이샤 냉각 장치

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1116357A (ja) * 1997-06-23 1999-01-22 Toshiba Microelectron Corp 半導体装置
JPH1145594A (ja) * 1997-07-30 1999-02-16 Nec Ic Microcomput Syst Ltd 半導体記憶装置
US6707320B2 (en) * 2001-11-30 2004-03-16 Sun Microsystems, Inc. Clock detect indicator
KR100598114B1 (ko) * 2005-01-25 2006-07-10 삼성전자주식회사 페이지 모드 동작을 수행하는 반도체 메모리 장치
KR100756966B1 (ko) * 2006-09-26 2007-09-07 현대자동차주식회사 차량용 콘솔 결합구조
KR20120106145A (ko) * 2011-03-17 2012-09-26 삼성전자주식회사 어드레스 변환 회로 및 이를 포함하는 반도체 메모리 장치

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07141889A (ja) * 1993-06-22 1995-06-02 Sharp Corp 半導体記憶装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4271487A (en) * 1979-11-13 1981-06-02 Ncr Corporation Static volatile/non-volatile ram cell
JPS59221891A (ja) * 1983-05-31 1984-12-13 Toshiba Corp スタテイツク型半導体記憶装置
JPH0762958B2 (ja) * 1983-06-03 1995-07-05 株式会社日立製作所 Ｍｏｓ記憶装置
US4710648A (en) * 1984-05-09 1987-12-01 Hitachi, Ltd. Semiconductor including signal processor and transient detector for low temperature operation
FR2619939B1 (fr) * 1987-09-01 1989-12-08 Thomson Semiconducteurs Circuit de detection de transitions d'adresses
KR930006970B1 (ko) * 1990-11-30 1993-07-24 현대전자산업 주식회사 어드레스 천이 검출회로
JPH0541088A (ja) * 1991-08-06 1993-02-19 Nec Ic Microcomput Syst Ltd 半導体集積回路
JP2696026B2 (ja) * 1991-11-21 1998-01-14 株式会社東芝 半導体記憶装置
JPH05159577A (ja) * 1991-12-10 1993-06-25 Oki Electric Ind Co Ltd アドレス入力遷移検出回路およびこれを形成する連想メモリセル回路
JP2845414B2 (ja) * 1992-09-18 1999-01-13 シャープ株式会社 半導体読み出し専用メモリ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07141889A (ja) * 1993-06-22 1995-06-02 Sharp Corp 半導体記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210097185A (ko) 2018-12-13 2021-08-06 카와사키 주코교 카부시키 카이샤 냉각 장치

Also Published As

Publication number Publication date
TW321740B (enExample) 1997-12-01
US5831930A (en) 1998-11-03
JPH0982085A (ja) 1997-03-28
KR970017609A (ko) 1997-04-30

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