TW530327B - Gallium nitride material devices and methods including backside vias - Google Patents
Gallium nitride material devices and methods including backside vias Download PDFInfo
- Publication number
- TW530327B TW530327B TW091103115A TW91103115A TW530327B TW 530327 B TW530327 B TW 530327B TW 091103115 A TW091103115 A TW 091103115A TW 91103115 A TW91103115 A TW 91103115A TW 530327 B TW530327 B TW 530327B
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- semiconductor structure
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- electrical contact
- gallium nitride
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 151
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 151
- 239000000463 material Substances 0.000 title claims abstract description 131
- 238000000034 method Methods 0.000 title claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 136
- 239000010703 silicon Substances 0.000 claims abstract description 62
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 61
- 239000004065 semiconductor Substances 0.000 claims description 117
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 63
- 238000011049 filling Methods 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 230000007704 transition Effects 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 8
- 238000000605 extraction Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 149
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000000151 deposition Methods 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000004576 sand Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- -1 bulk silicon wafers) Chemical compound 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 230000005274 electronic transitions Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/801—FETs having heterojunction gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N80/00—Bulk negative-resistance effect devices
- H10N80/10—Gunn-effect devices
- H10N80/107—Gunn diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
Landscapes
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
- Semiconductor Lasers (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/792,414 US6611002B2 (en) | 2001-02-23 | 2001-02-23 | Gallium nitride material devices and methods including backside vias |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW530327B true TW530327B (en) | 2003-05-01 |
Family
ID=25156813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091103115A TW530327B (en) | 2001-02-23 | 2002-02-22 | Gallium nitride material devices and methods including backside vias |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6611002B2 (enExample) |
| EP (3) | EP2894679B1 (enExample) |
| JP (1) | JP4792558B2 (enExample) |
| AU (1) | AU2002252047A1 (enExample) |
| TW (1) | TW530327B (enExample) |
| WO (1) | WO2002069410A2 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI395320B (zh) * | 2005-01-06 | 2013-05-01 | 電源整合公司 | 氮化鎵半導體裝置 |
| TWI400810B (zh) * | 2005-06-29 | 2013-07-01 | 克立公司 | 在碳化矽基板上低差排密度之第三族氮化層及其製造方法 |
| TWI847767B (zh) * | 2022-06-24 | 2024-07-01 | 美商亮銳公司 | 發光二極體晶粒及其製造方法 |
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| AU2001279163A1 (en) | 2000-08-04 | 2002-02-18 | The Regents Of The University Of California | Method of controlling stress in gallium nitride films deposited on substrates |
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| US6657237B2 (en) * | 2000-12-18 | 2003-12-02 | Samsung Electro-Mechanics Co., Ltd. | GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same |
| US6956250B2 (en) * | 2001-02-23 | 2005-10-18 | Nitronex Corporation | Gallium nitride materials including thermally conductive regions |
| US7233028B2 (en) * | 2001-02-23 | 2007-06-19 | Nitronex Corporation | Gallium nitride material devices and methods of forming the same |
| DE10111501B4 (de) * | 2001-03-09 | 2019-03-21 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement und Verfahren zu dessen Herstellung |
| US7067849B2 (en) * | 2001-07-17 | 2006-06-27 | Lg Electronics Inc. | Diode having high brightness and method thereof |
| JP2003086839A (ja) * | 2001-09-07 | 2003-03-20 | Sharp Corp | 窒化物半導体発光素子およびその製造方法 |
| US6949395B2 (en) * | 2001-10-22 | 2005-09-27 | Oriol, Inc. | Method of making diode having reflective layer |
| US7148520B2 (en) | 2001-10-26 | 2006-12-12 | Lg Electronics Inc. | Diode having vertical structure and method of manufacturing the same |
| US6900501B2 (en) * | 2001-11-02 | 2005-05-31 | Cree Microwave, Inc. | Silicon on insulator device with improved heat removal |
| US20030132433A1 (en) * | 2002-01-15 | 2003-07-17 | Piner Edwin L. | Semiconductor structures including a gallium nitride material component and a silicon germanium component |
| TW561637B (en) * | 2002-10-16 | 2003-11-11 | Epistar Corp | LED having contact layer with dual dopant state |
| US6927422B2 (en) * | 2002-10-17 | 2005-08-09 | Astralux, Inc. | Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters |
| DE10250832B4 (de) * | 2002-10-31 | 2010-02-11 | Infineon Technologies Ag | MOS-Transistor auf SOI-Substrat mit Source-Durchkontaktierung und Verfahren zur Herstellung eines solchen Transistors |
| US6977396B2 (en) * | 2003-02-19 | 2005-12-20 | Lumileds Lighting U.S., Llc | High-powered light emitting device with improved thermal properties |
| US7714345B2 (en) * | 2003-04-30 | 2010-05-11 | Cree, Inc. | Light-emitting devices having coplanar electrical contacts adjacent to a substrate surface opposite an active region and methods of forming the same |
| US7135720B2 (en) | 2003-08-05 | 2006-11-14 | Nitronex Corporation | Gallium nitride material transistors and methods associated with the same |
| CN101335320B (zh) * | 2003-09-19 | 2012-06-06 | 霆激科技股份有限公司 | 用于制作发光器件的方法 |
| US20050145851A1 (en) * | 2003-12-17 | 2005-07-07 | Nitronex Corporation | Gallium nitride material structures including isolation regions and methods |
| US7071498B2 (en) * | 2003-12-17 | 2006-07-04 | Nitronex Corporation | Gallium nitride material devices including an electrode-defining layer and methods of forming the same |
| US8835937B2 (en) * | 2004-02-20 | 2014-09-16 | Osram Opto Semiconductors Gmbh | Optoelectronic component, device comprising a plurality of optoelectronic components, and method for the production of an optoelectronic component |
| EP1730790B1 (en) * | 2004-03-15 | 2011-11-09 | Tinggi Technologies Private Limited | Fabrication of semiconductor devices |
| US8309377B2 (en) | 2004-04-07 | 2012-11-13 | Tinggi Technologies Private Limited | Fabrication of reflective layer on semiconductor light emitting devices |
| US7361946B2 (en) * | 2004-06-28 | 2008-04-22 | Nitronex Corporation | Semiconductor device-based sensors |
| US7339205B2 (en) * | 2004-06-28 | 2008-03-04 | Nitronex Corporation | Gallium nitride materials and methods associated with the same |
| US7687827B2 (en) * | 2004-07-07 | 2010-03-30 | Nitronex Corporation | III-nitride materials including low dislocation densities and methods associated with the same |
| US6928878B1 (en) | 2004-09-28 | 2005-08-16 | Rosemount Aerospace Inc. | Pressure sensor |
| DE102004061865A1 (de) | 2004-09-29 | 2006-03-30 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Dünnfilmhalbleiterchips |
| WO2006050403A2 (en) * | 2004-10-28 | 2006-05-11 | Nitronex Corporation | Gallium nitride/silicon based monolithic microwave integrated circuit |
| KR100728533B1 (ko) * | 2004-11-23 | 2007-06-15 | 삼성코닝 주식회사 | 질화갈륨 단결정 후막 및 이의 제조방법 |
| US7247889B2 (en) | 2004-12-03 | 2007-07-24 | Nitronex Corporation | III-nitride material structures including silicon substrates |
| JP4802542B2 (ja) * | 2005-04-19 | 2011-10-26 | 株式会社デンソー | 炭化珪素半導体装置 |
| US7365374B2 (en) * | 2005-05-03 | 2008-04-29 | Nitronex Corporation | Gallium nitride material structures including substrates and methods associated with the same |
| SG130975A1 (en) * | 2005-09-29 | 2007-04-26 | Tinggi Tech Private Ltd | Fabrication of semiconductor devices for light emission |
| KR20080072833A (ko) * | 2005-10-04 | 2008-08-07 | 니트로넥스 코오포레이션 | 광대역 애플리케이션을 위한 갈륨 나이트라이드 물질트랜지스터 및 방법 |
| SG131803A1 (en) * | 2005-10-19 | 2007-05-28 | Tinggi Tech Private Ltd | Fabrication of transistors |
| US9608102B2 (en) * | 2005-12-02 | 2017-03-28 | Infineon Technologies Americas Corp. | Gallium nitride material devices and associated methods |
| US7566913B2 (en) | 2005-12-02 | 2009-07-28 | Nitronex Corporation | Gallium nitride material devices including conductive regions and methods associated with the same |
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| JP5386177B2 (ja) * | 2006-01-10 | 2014-01-15 | クリー インコーポレイテッド | 炭化珪素ディンプル基板 |
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| US6265289B1 (en) | 1998-06-10 | 2001-07-24 | North Carolina State University | Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby |
| JP3316562B2 (ja) | 1998-07-21 | 2002-08-19 | 株式会社村田製作所 | 半導体発光素子及びＺｎＯ膜の形成方法 |
| JP3164078B2 (ja) * | 1998-10-05 | 2001-05-08 | 日本電気株式会社 | 電界効果トランジスタおよびその製造方法 |
| JP3505405B2 (ja) * | 1998-10-22 | 2004-03-08 | 三洋電機株式会社 | 半導体素子及びその製造方法 |
| US6255198B1 (en) | 1998-11-24 | 2001-07-03 | North Carolina State University | Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby |
| US6177688B1 (en) | 1998-11-24 | 2001-01-23 | North Carolina State University | Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates |
| JP2000261035A (ja) * | 1999-03-12 | 2000-09-22 | Toyoda Gosei Co Ltd | ＧａＮ系の半導体素子 |
| JP2000277441A (ja) * | 1999-03-26 | 2000-10-06 | Nagoya Kogyo Univ | 半導体構造とそれを備えた半導体素子及び結晶成長方法 |
| US6521514B1 (en) | 1999-11-17 | 2003-02-18 | North Carolina State University | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates |
| US20020069816A1 (en) | 1999-12-13 | 2002-06-13 | Thomas Gehrke | Methods of fabricating gallium nitride layers on textured silicon substrates, and gallium nitride semiconductor structures fabricated thereby |
| US6380108B1 (en) | 1999-12-21 | 2002-04-30 | North Carolina State University | Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby |
| US6355497B1 (en) | 2000-01-18 | 2002-03-12 | Xerox Corporation | Removable large area, low defect density films for led and laser diode growth |
| JP4801306B2 (ja) | 2000-02-09 | 2011-10-26 | ノースカロライナ ステート ユニバーシティー | 窒化ガリウム半導体構造体の製造方法および窒化ガリウム半導体構造体 |
| US6261929B1 (en) | 2000-02-24 | 2001-07-17 | North Carolina State University | Methods of forming a plurality of semiconductor layers using spaced trench arrays |
| FR2809534B1 (fr) | 2000-05-26 | 2005-01-14 | Commissariat Energie Atomique | Dispositif semiconducteur a injection electronique verticale et son procede de fabrication |
-
2001
- 2001-02-23 US US09/792,414 patent/US6611002B2/en not_active Expired - Lifetime
-
2002
- 2002-02-22 EP EP15154907.8A patent/EP2894679B1/en not_active Expired - Lifetime
- 2002-02-22 EP EP02721099.6A patent/EP1378012B1/en not_active Expired - Lifetime
- 2002-02-22 JP JP2002568431A patent/JP4792558B2/ja not_active Expired - Lifetime
- 2002-02-22 TW TW091103115A patent/TW530327B/zh not_active IP Right Cessation
- 2002-02-22 WO PCT/US2002/005182 patent/WO2002069410A2/en not_active Ceased
- 2002-02-22 EP EP19172826.0A patent/EP3561883A1/en not_active Withdrawn
- 2002-02-22 AU AU2002252047A patent/AU2002252047A1/en not_active Abandoned
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI395320B (zh) * | 2005-01-06 | 2013-05-01 | 電源整合公司 | 氮化鎵半導體裝置 |
| TWI400810B (zh) * | 2005-06-29 | 2013-07-01 | 克立公司 | 在碳化矽基板上低差排密度之第三族氮化層及其製造方法 |
| US9331192B2 (en) | 2005-06-29 | 2016-05-03 | Cree, Inc. | Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same |
| TWI847767B (zh) * | 2022-06-24 | 2024-07-01 | 美商亮銳公司 | 發光二極體晶粒及其製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2894679B1 (en) | 2019-05-08 |
| WO2002069410A3 (en) | 2003-03-06 |
| US20020117681A1 (en) | 2002-08-29 |
| EP3561883A1 (en) | 2019-10-30 |
| JP2004530289A (ja) | 2004-09-30 |
| EP1378012B1 (en) | 2017-12-13 |
| EP2894679A1 (en) | 2015-07-15 |
| WO2002069410A2 (en) | 2002-09-06 |
| AU2002252047A1 (en) | 2002-09-12 |
| JP4792558B2 (ja) | 2011-10-12 |
| US6611002B2 (en) | 2003-08-26 |
| EP1378012A2 (en) | 2004-01-07 |
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