JP5567553B2 - 窒化ガリウム材料加工及びその関連するデバイス構造体 - Google Patents
窒化ガリウム材料加工及びその関連するデバイス構造体 Download PDFInfo
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- JP5567553B2 JP5567553B2 JP2011507456A JP2011507456A JP5567553B2 JP 5567553 B2 JP5567553 B2 JP 5567553B2 JP 2011507456 A JP2011507456 A JP 2011507456A JP 2011507456 A JP2011507456 A JP 2011507456A JP 5567553 B2 JP5567553 B2 JP 5567553B2
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- 229910002601 GaN Inorganic materials 0.000 title claims description 191
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 191
- 239000000463 material Substances 0.000 title claims description 176
- 238000012545 processing Methods 0.000 title description 14
- 238000000034 method Methods 0.000 claims description 84
- 238000005530 etching Methods 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 51
- 230000004888 barrier function Effects 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- 230000007246 mechanism Effects 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 170
- 230000008569 process Effects 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 27
- 229910052710 silicon Inorganic materials 0.000 description 26
- 239000010703 silicon Substances 0.000 description 25
- 238000002513 implantation Methods 0.000 description 12
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 10
- 229910052733 gallium Inorganic materials 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 239000011241 protective layer Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 239000007943 implant Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 229910003460 diamond Inorganic materials 0.000 description 6
- 239000010432 diamond Substances 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 3
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- -1 for example Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
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- 230000005274 electronic transitions Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
Description
本出願は、2008年6月20日に出願された米国特許出願第12/143,727号の一部継続出願であり、2008年4月29日に出願された米国仮特許出願第61/048,940号の優先権を主張し、両出願は本明細書に参照により組み入れる。
Claims (20)
- バッファ領域を含む下層領域上に窒化ガリウム材料領域を形成するステップと、
前記下層領域を除去して前記窒化ガリウム材料領域のN面を露出するステップと、
前記下層領域の除去は、バッファ領域と、前記窒化ガリウム材料領域の一部を除去することを含み、
前記窒化ガリウム材料領域の前記N面上に機構を形成するステップとからなる、窒化ガリウム材料デバイス構造体を形成する方法。 - 前記窒化ガリウム材料領域の前記N面上にソース接点、ゲート接点及びドレイン接点を形成するステップをさらに備える、請求項1に記載の方法。
- 前記下層領域が基板からなる、請求項1に記載の方法。
- 前記窒化ガリウム材料領域上にハンドル領域を形成するステップをさらに備える、請求項1に記載の方法。
- 前記ハンドル領域が犠牲ハンドル部分を含む、請求項4に記載の方法。
- 前記窒化ガリウム材料領域内の注入種の検出に基づき、前記下層領域の除去を停止するステップをさらに備える、請求項1に記載の方法。
- 窒化ガリウム材料領域及び該窒化ガリウム材料領域の下層にある領域からなり前記下層がバッファ領域を含む構造体内に種を導入するステップと、
前記バッファ領域及び前記窒化ガリウム材料領域の一部を含む前記構造体の一部分を除去して前記窒化ガリウム材料領域のN面を露出するステップと、
前記種の量の検出に基づき、前記構造体の当該除去を停止するステップと、
前記窒化ガリウム材料領域の前記N面上に機構を形成するステップ
とからなる、方法。 - 前記種が前記窒化ガリウム材料領域内に注入される、請求項7に記載の方法。
- 前記種が前記窒化ガリウム材料領域内のドーパントである、請求項7に記載の方法。
- 前記種が前記バッファ領域に含まれる、請求項9に記載の方法。
- 前記窒化ガリウム材料領域は、チャネル層と、その上に位置するバリア層とを含む、請求項7に記載の方法。
- 前記窒化ガリウム材料領域の一部は、チャネル層である、請求項7に記載の方法。
- 前記構造体の一部分を除去することがエッチングからなる、請求項7に記載の方法。
- 前記構造体の当該除去を停止することが所定の量の前記種の検出に基づく、請求項7に記載の方法。
- 前記構造体の当該除去を停止することが検出した種の量の減少の検出に基づく、請求項7に記載の方法。
- 窒化ガリウム材料領域、犠牲部分、及び該窒化ガリウム材料領域と該犠牲部分との間のエッチング停止層からなる構造体を形成するステップと、
前記犠牲部分を第1速度でエッチングして前記犠牲部分及び前記窒化ガリウム材料領域の一部を除去して前記窒化ガリウム材料領域のN面を露出するステップと、
前記犠牲部分はバッファ領域を含み、
前記エッチング停止層を第2速度でエッチングするステップと、
前記窒化ガリウム材料領域の前記N面上に機構を形成するステップと
からなる、方法において、前記第1速度が前記第2速度の50倍より大きいことを特徴とする、方法。 - 前記犠牲部分のエッチングが前記窒化ガリウム材料領域のN面を露出する、請求項16に記載の方法。
- 前記窒化ガリウム材料領域の一部は、チャネル層である、請求項16に記載の方法。
- 前記犠牲部分が窒化ガリウム材料からなり、前記エッチング停止層が窒化ガリウム材料からなり、前記エッチング停止層の前記窒化ガリウム材料におけるアルミニウム濃度が前記犠牲部分の前記窒化ガリウム材料におけるアルミニウム濃度より大きい、請求項16に記載の方法。
- 前記第1速度が前記第2速度の100倍より大きい、請求項16に記載の方法。
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US12/143,727 | 2008-06-20 | ||
US12/143,727 US8343824B2 (en) | 2008-04-29 | 2008-06-20 | Gallium nitride material processing and related device structures |
PCT/US2009/002663 WO2009134408A1 (en) | 2008-04-29 | 2009-04-29 | Gallium nitride material processing and related device structures |
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- 2009-04-29 EP EP09739211.2A patent/EP2272109A4/en not_active Withdrawn
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EP2272109A1 (en) | 2011-01-12 |
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