TWI536605B - 發光二極體 - Google Patents
發光二極體 Download PDFInfo
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- TWI536605B TWI536605B TW102129828A TW102129828A TWI536605B TW I536605 B TWI536605 B TW I536605B TW 102129828 A TW102129828 A TW 102129828A TW 102129828 A TW102129828 A TW 102129828A TW I536605 B TWI536605 B TW I536605B
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- 239000004065 semiconductor Substances 0.000 claims description 121
- 238000009792 diffusion process Methods 0.000 claims description 42
- 229910002601 GaN Inorganic materials 0.000 claims description 20
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 9
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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Description
本發明是有關於一種發光二極體。
發光二極體是一種發光的半導體元件。透過半導體之間電子與電洞於發光層中的結合,使得發光層產生光子以發光。因發光二極體具有體積小、壽命長與省電的優點,因此已普偏使用於顯示照明設置當中。
然而在一般的發光二極體中,因製程與材料的關係,發光二極體內容易產生電流擁擠效應。電流在發光二極體中分布不均勻,導致其影響發光二極體的發光效率,亦會使光輸出不均,無法產生高品質的光源。
本發明之一態樣提供一種發光二極體,包含基板、第一半導體層、發光層、第二半導體層、電流擴散層、第三半導體層、第一電極、第二電極與絕緣層。第一半導體層形成於基板上方。發光層形成於部分第一半導體層上,且使部分第一半導體層表面裸露。第二半導體層形成於發
光層上。電流擴散層形成於第二半導體層上。第三半導體層形成於電流擴散層上。第一電極形成於裸露的第一半導體層表面。第二電極包括形成於基板表面之基部,及複數自基部垂直向上延伸之梳狀結構,且每一梳狀結構均貫穿第一半導體層、發光層、第二半導體層、電流擴散層以及部分第三半導體層,且每一梳狀結構之頂端是停留在第三半導體層內。絕緣層覆蓋於第二電極與第一半導體層、發光層、第二半導體層、電流擴散層及第三半導體層接觸之外壁表面,並使每一梳狀結構之頂端裸露,使其得以與第三半導體層接觸。
在一或多個實施方式中,電流擴散層之電阻值高於第三半導體層的電阻值與第二半導體層的電阻值。
在一或多個實施方式中,電流擴散層為超晶格疊層結構。
在一或多個實施方式中,超晶格疊層結構包含至少一氮化鎵鋁層與至少一氮化鎵層。氮化鎵層與氮化鎵鋁層互相疊合。
在一或多個實施方式中,氮化鎵鋁層內摻雜有N型或P型雜質。
在一或多個實施方式中,電流擴散層是摻雜有N型雜質或P型雜質的氮化鎵層。
在一或多個實施方式中,電流擴散層更包含複數個貫穿孔。
在一或多個實施方式中,第一半導體層為P型半導
體且第二半導體層與第三半導體層為N型半導體,或者第一半導體層為N型半導體且第二半導體層與第三半導體層為P型半導體。
在一或多個實施方式中,每一梳狀結構為柱狀或錐狀。
在一或多個實施方式中,錐狀之頂端之截面積小於梳狀結構與基部連接處之截面積。
因本實施方式之發光二極體包含電流擴散層,因此電流可在電流擴散層作適度的擴散再往發光層流動,如此一來電流於發光層中具有較大的的分布面積,使得發光層的發光效率得以提高。
100‧‧‧基板
200‧‧‧第一半導體層
300‧‧‧發光層
400‧‧‧第二半導體層
500‧‧‧電流擴散層
510‧‧‧氮化鎵鋁層
520‧‧‧氮化鎵層
530‧‧‧貫穿孔
600‧‧‧第三半導體層
600a‧‧‧出光面
700‧‧‧第一電極
800‧‧‧第二電極
810‧‧‧基部
820、830‧‧‧梳狀結構
822‧‧‧頂端
824‧‧‧連接處
900‧‧‧絕緣層
第1圖繪示依照本發明一實施方式之發光二極體的剖面圖。
第2圖繪示第1圖之電流擴散層與梳狀結構的局部放大圖。
第3圖繪示本發明另一實施方式的上視圖。
第4圖繪示沿第3圖之線段4-4的剖面圖。
第5圖繪示本發明又一實施方式之發光二極體的剖面圖。
以下將以圖式揭露本發明的複數個實施方式,為明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,應瞭解到,這些實務上的細節不應用以限制本發明。也就是說,在本發明部分實施方式中,這些實務上的細節是非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。
第1圖繪示依照本發明一實施方式之發光二極體的剖面圖。發光二極體包含基板100、第一半導體層200發光層300、第二半導體層400、電流擴散層500、第三半導體層600、第一電極700、第二電極800與絕緣層900。第一半導體層200形成於基板100上方。發光層300形成於部分第一半導體層200上,且使部分第一半導體層200表面裸露。第二半導體層400形成於發光層300上。電流擴散層500形成於第二半導體層400上。第三半導體層600形成於電流擴散層500上。第一電極700形成於裸露的第一半導體層200表面。第二電極800包括形成於基板100表面之基部810,及複數自基部810垂直向上延伸之梳狀結構820。每一梳狀結構820均貫穿第一半導體層200、發光層300、第二半導體層400、電流擴散層500以及部分第三半導體層600,且每一梳狀結構820之頂端822是停留在第三半導體層600內。絕緣層900覆蓋於第二電極800與第一半導體層200、發光層300、第二半導體層400、電流擴散層500及第三半導體層600接觸之外壁表面,並使每一梳狀結構820之頂端822裸露,使其得以與第三半導體層
600接觸。
因此當第一電極700與第二電極800之間加上偏壓時,例如第二電極800被施加正電壓,電流會由第二電極800之基部810往梳狀結構820的頂端822流動。之後電流依序流過第三半導體層600、電流擴散層500、第二半導體層400、發光層300與第一半導體層200而到達第一電極700,如此一來第一半導體層200與第二半導體層400之間的電子與電洞得以在發光層300中結合而發光。若梳狀結構820之間相距過遠,則自各梳狀結構820流至第三半導體層600的電流將造成分布不均,導致發光層300的發光效率下降。然而因本實施方式之發光二極體包含電流擴散層500,因此當電流流經電流擴散層500時,電流會先在電流擴散層500作適度的擴散再往下流動。如此一來電流於第二半導體層400、發光層300與第一半導體層200中具有較大的的分布面積,使得發光層300的發光效率得以提高,光輸出均勻,亦可減少梳狀結構820的數量。
接著請參照第2圖,其繪示第1圖之電流擴散層500與梳狀結構820的局部放大圖。在一或多個實施方式中,電流擴散層500為超晶格疊層結構,且超晶格疊層結構與梳狀結構820之間以絕緣層900作絕緣。超晶格疊層結構之各疊層之間的界面具有高電導率,換言之,超晶格疊層結構在水平方向(定義為與梳狀結構820之長軸方向垂直的方向)的傳導阻值低於垂直方向(定義為與梳狀結構820之長軸方向平行的方向)的傳導阻值,因此當電流流至
界面處時,電流即能夠藉由界面處擴散,以增加電流的分佈範圍。
舉例而言,超晶格疊層結構可包含至少一氮化鎵鋁(AlGaN)層510與至少一氮化鎵(GaN)層520,例如在第2圖中,氮化鎵鋁層510與氮化鎵層520皆為三層,然而本發明不以此為限。氮化鎵層520與氮化鎵鋁層510互相疊合。因此在氮化鎵鋁層510與氮化鎵層520之間可存在高電導率的二維電子氣,以利於電流的流動。另外,在一或多個實施方式中,氮化鎵鋁層510內可摻雜有N型或P型雜質。然而上述之超晶格疊層結構之材質僅為例示,並非用以限制本發明。本發明所屬領域具通常知識者,應視實際需求,彈性選擇超晶格疊層結構之材質。
接著請回到第1圖。在本實施方式中,每一梳狀結構820為錐狀。舉例而言,如第1圖所示,梳狀結構820的頂端822之截面積小於梳狀結構820與基部810連接處824之截面積。因此,當絕緣層900具有反射功效時,錐狀的梳狀結構820有助於自發光層300發出的光能夠藉由絕緣層900而反射至出光面600a,以增加發光二極體的出光量。
在一或多個實施方式中,第一半導體層200為P型半導體,且第二半導體層400與第三半導體層600為N型半導體。或者第一半導體層200為N型半導體,且第二半導體層400與第三半導體層600為P型半導體。其中第二半導體層400與第三半導體層600的材質可選擇為相同或
不同,本發明不以此為限。
接著請回到第1圖。在其他的實施方式中,電流擴散層500可不為超晶格疊層結構,且電流擴散層500之電阻值高於第三半導體層600的電阻值與第二半導體層400的電阻值。因此當電流由第三半導體層600流至電流擴散層500後,具有較高電阻值的電流擴散層500會稍微阻礙電流向下流動,藉以讓電流在電流擴散層500中進一步擴散,以增加電流的分布面積。因此當電流自電流擴散層500流過第二半導體層400而到達發光層300時,因電流的分布面積增加,因此發光層300的發光效率便可提高,光輸出均勻,亦可減少梳狀結構820的數量。
在一或多個實施方式中,上述之電流擴散層500可為摻雜有N型雜質或P型雜質的氮化鎵(GaN)層,以達到上述之較高電阻值的需求。然而本發明不以此為限,只要電流擴散層500的電阻值高於第三半導體層600的電阻值與第二半導體層400的電阻值,皆在本發明之範疇內。
接著請同時參照第3圖與第4圖,其中第3圖繪示本發明另一實施方式的上視圖,第4圖繪示沿第3圖之線段4-4的剖面圖。本實施方式與第1圖之實施方式的不同處在於貫穿孔530的存在。在本實施方式中,電流擴散層500更包含複數個貫穿孔530。其中這些貫穿孔530中可選擇填充第二半導體層400或第三半導體層600的材質,因此部分來自第三半導體層600的電流可經由貫穿孔530而流至第二半導體層400。詳細而言,電流擴散層500本身可
增加電流於水平方向的擴散能力,而因電流可直接由第三半導體層600通過貫穿孔530而到達第二半導體層400,因此貫穿孔530可增加電流於垂直方向的電流量。如此一來只要設計貫穿孔530於電流擴散層500中的數量與分佈密度,便可間接控制電流的流向。至於本實施方式的其他細節因與第1圖的實施方式相同,因此便不再贅述。
接著請參照第5圖,其繪示本發明又一實施方式之發光二極體的剖面圖。本實施方式與第1圖之實施方式的不同處在於梳狀結構的形狀。在本實施方式中,梳狀結構830可為柱狀,即梳狀結構830分別於第一半導體層200、發光層300、第二半導體層400與電流擴散層500中的截面積實質相同。然而本發明不以此為限,只要梳狀結構之形狀貫穿第一半導體層200、發光層300、第二半導體層400、電流擴散層500以及部分第三半導體層600,使得梳狀結構之頂端(如第1圖中的梳狀結構之頂端822所繪示)與第三半導體層600接觸,皆在本發明之範疇中。至於本實施方式的其他細節因與第1圖的實施方式相同,因此便不再贅述。
雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100‧‧‧基板
200‧‧‧第一半導體層
300‧‧‧發光層
400‧‧‧第二半導體層
500‧‧‧電流擴散層
600‧‧‧第三半導體層
600a‧‧‧出光面
700‧‧‧第一電極
800‧‧‧第二電極
810‧‧‧基部
820‧‧‧梳狀結構
822‧‧‧頂端
824‧‧‧連接處
900‧‧‧絕緣層
Claims (9)
- 一種發光二極體,包含:一基板;一第一半導體層,形成於該基板上方;一發光層,形成於部分該第一半導體層上,且使部分該第一半導體層表面裸露;一第二半導體層,形成於該發光層上;一電流擴散層,形成於該第二半導體層上,其中該電流擴散層更包含複數個貫穿孔;一第三半導體層,形成於該電流擴散層上;一第一電極,形成於裸露的該第一半導體層表面;一第二電極,包括一形成於該基板表面之基部,及複數自該基部垂直向上延伸之梳狀結構,且每一該等梳狀結構均貫穿該第一半導體層、該發光層、該第二半導體層、該擴散層以及部分該第三半導體層,且每一該等梳狀結構之頂端是停留在該第三半導體層內;以及一絕緣層,覆蓋於該第二電極與該第一半導體層、該發光層、該第二半導體層、該電流擴散層及該第三半導體層接觸之外壁表面,並使每一該等梳狀結構之該頂端裸露,使其得以與該第三半導體層接觸。
- 如請求項1所述的發光二極體,其中該電流擴散層之電阻值高於該第三半導體層的電阻值與該第二半導體層的電阻值。
- 如請求項1所述的發光二極體,其中該電流擴散層為一超晶格疊層結構。
- 如請求項3所述的發光二極體,其中該超晶格疊層結構包含:至少一氮化鎵鋁層;以及至少一氮化鎵層,與該氮化鎵鋁層互相疊合。
- 如請求項4所述的發光二極體,其中該氮化鎵鋁層內摻雜有N型或P型雜質。
- 如請求項2所述的發光二極體,其中該電流擴散層是摻雜有N型雜質或P型雜質的氮化鎵層。
- 如請求項1所述的發光二極體,其中該第一半導體層為P型半導體且該第二半導體層與該第三半導體層為N型半導體,或者該第一半導體層為N型半導體且該第二半導體層與該第三半導體層為P型半導體。
- 如請求項1所述的發光二極體,其中每一該等梳狀結構為柱狀或錐狀。
- 如請求項8所述的發光二極體,其中該錐狀之頂端 之截面積小於該梳狀結構與該基部連接處之截面積。
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