TW501255B - Semiconductor device and method of manufacturing the same - Google Patents

Semiconductor device and method of manufacturing the same Download PDF

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Publication number
TW501255B
TW501255B TW090113643A TW90113643A TW501255B TW 501255 B TW501255 B TW 501255B TW 090113643 A TW090113643 A TW 090113643A TW 90113643 A TW90113643 A TW 90113643A TW 501255 B TW501255 B TW 501255B
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TW
Taiwan
Prior art keywords
conductive
semiconductor device
patent application
electrode
substrate
Prior art date
Application number
TW090113643A
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English (en)
Inventor
Akira Fukuizumi
Original Assignee
Nippon Electric Co
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Application granted granted Critical
Publication of TW501255B publication Critical patent/TW501255B/zh

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Description

5〇1255 五、發明說明（1) 【發明背景】 本發明大體上是關於半導體裴置及其势造方法。 更特別的是，此發明係針對功率裝置：安裝結構。 在習用的功率裝置封裝中’―般使用導線架來設置類 功率裝置的半導體裝置，並利用&纟g 樹脂密封。 已知移動成形法來進行 參照圖Μ與1B，將描述日本公開專利公報（Jp_
Hei· 6-37 1 22號所揭露的功率裝置之安裝法。 ^ 在組合半導體裝置前，以衝壓一金^ ° 具有頭部（晶粒焊墊）21與由堤部（繫噹式^形= 的導線架23。 繫片)26所連結之導線23 對於此結構來說，是直接在該頭部2〗之上 連接部之膠粒外圍部下方形成凹槽28。 '厂、 如圖iA所示，膠粒22係以焊料託而附 此外直：線=連接在膠粒22上的電極 其後，將連同膠粒U所設置的導線架安裝在密圭晶粒 個導線23分開。 稽田切d %部26將各 在上述的安裝方法中，會依照裝 间 線架設計成不同形狀。闵而如办t 種類不同而將導 m ^ 因而’在各個種類中的萝造設備是 固定的’因而使得生產線不具有彈性。備疋 此外’在各個種類中必須製 成金屬導線架。這歧情況合】 = 導線架，以便形 、一 h况會導致成本升高。再者，減少由 五、發明說明（2) 導線架所引起的裝置數 复数里以便降低生產效率。 I通之，在習用方法中，很難提 裝。 丁很雞权仏廉^貝的的功率裝置封 【發明概述】 因此本發明之目的是提供一種具有小 結構的半導體裝置。 寸/、廉價安裝 在本發明的半導體裝置中，-絕緣基板具右、“ 孔。 极具有複數個通 而複數個導電端子係埋在通 電端子係至少割分A楚增#山 牡知·種情況下，導 子。 刀4一第—導電端子與一對第二導電端導 二匕外’―半導體元件至少具有位在表面的 極。i ϊ ’表面電極係以面朝下法連接至第-導“：. 再者，形成橫剖面視為方形拱狀且具有一=， 部的一金屬區塊。在此U半導體元件之_ 兩端 部，並以兩端部圈住第二導電端子。 月面圈住頂 此外，一密封樹脂會密封住半導體元件。 極 對此結構來說，半導體元件具有位在背面的— 而此背面電極係經由金屬區塊連接至第二 牙面電 在這種情況了，各個第一與第二導電端 U子。 銅膏來形成。 J籍著使用 此外，一第一基板電極係形成在第一導電# 表面電極係經由第一基板電極連接至第一導電^子^。而 501255
在此，第一基板電極可 再者，一第二基板電極 金屬區塊係經由第二基板電 在此，第二基板電極可 在這種情況下，表面電 基板則包含有一樹脂基板。 藉著使用銀膏來形成。 係形成在第二導電端子上。而 極連接至第二導電端子。 籍著使用銀膏來形成。 極包含有一凸塊電極。而絕緣 特別的是使用諸如樹脂層板的絕緣基板。此外， 體裝置之背面電極是透過一般作為熱槽的金屬區塊取出= 絕緣基板該側的。而半導體基板會完全讓樹脂密封住， 藉著使用切方塊之器具將其切割成獨立的元件。 、 因此’可在不考慮設備種類、 製造功率裝置。 具有高彈性的生產線中 裝置此外’在安裝結構可獲得具有高敷熱性的小尺寸功率 更特別的是，藉著使用面朝下法，將膠粒安裝在具 導電端子的絕緣基板上。此外，金屬區塊會覆蓋其上^致 使可將膠粒的背面電極取出至導電端子處。 在將複數個膠粒完樹脂密封住後，藉著使用切方塊之 器具將膠粒切割成獨立的元件。 因此不需要昂貴的製造設備。此外，可在具有高彈性 的生產線中製造半導體裝置，且可有效率地製造半導體裝 置。 ^ 一再者，在不需要使用導線架的情況下，廉價地提供具 有高散熱性的小尺寸封裝。 "
第7頁 501255 五、發明說明（4) 【較佳實施例】 [第一實施例] 以下將參照圖2A至2C來描述第一實施例。 . 如圖2A至2C所示，在由玻璃環氧樹脂層板製成的樹脂 基板1中開啟通孔2，以便穿透樹脂基板1。其中，將導電 端子3埋在通孔2中。在此，各個導電端子3是由銅膏所製 成的。 而基板電極4則是藉著使用銀膏而形成在導電端子3的 上下表面上。 至於具有凸塊電極6的膠粒5係藉著已知方法而安裝在 樹脂基板1的表侧上。此外，金屬區塊7會覆蓋膠粒5。 對於類似這樣的結構，金屬區塊7與基板電極4，以及 金屬區塊7與膠粒5的背面電極會分別透過焊料8而連接在 一起0 =的是’作為膠粒5之主要電極的背面電極係經由 姑i f 與導電端子3連接至位在樹脂基板1背面該侧處 & t=Γ蛋4。此外’樹脂基板1係以密封樹脂1 〇為成形樹
脂來將加以密封的。 J 般矣ΐΐϊί導體裝置中’由勝粒5所產生的熱會透過膠 來，亦合透渦ί «而抵達導電端子3的路徑有效地輻射出 一路^ 4 屬區塊7而從膠粒#面抵達金屬端子3的另 路徑有效地輻射出來。 更特別的疋，由於如圖丨所示的習·用結構之膠粒表側
501255 五、發明說明（5) 覆蓋著密封樹脂，因此無法有效地實行熱量消散。相較之 下，本實施例中可有效地從膠粒5表侧執行熱量消散。 參照圖圖3 A至4 C將描述本發明第一實施例的製造方 法。 首先，利用衝壓在由樹脂層板組成的樹脂基板1中開 啟通孔2，如圖3 A所示。 此外，藉著使用已知的輔助刀片法將銅膏施加到通孔 2中，並將銅膏加以烘烤以便形成導電端子3，。 在這種情況下，樹脂基板1具有可讓複數個膠粒設置 在如圖3 A所示各處的長度。此外，樹脂基板1亦具有可讓 複數個膠粒排列在如圖3 A與圖5所示縱深方向的長度。 其後’利用已知的遮敝印刷法將銀膏施加至銅端子3 的上下表面上，並將銀膏加以烘烤以便形成基板電極4， 如圖3B所示。 接下來’將上面具有凸塊電極6而背面該侧具有背面 電極的膠粒5翻轉。將翻轉後的膠粒5放置在（面朝下）基板 1上’並將其加熱/施壓以便讓基板電極4與凸塊電極6連 接，如圖3 C所示。 接續，將焊料糊施加在膠粒5之上與金屬區塊7下表面 兩側。之後，將金屬區塊7放置在膠粒5上。此外，藉著通 過回流室（未圖示）與使用焊料8，以金屬區塊7黏住或圍住 基板電極4與膠粒5，如圖4 A所示。 其後，將設有膠粒5與金屬區塊7的樹脂基板1安裝在 密封晶粒9的内侧。在將晶粒9夾緊後，在預定時期内將從
第9頁 501255
圖4B之前方強化的熔解環氧基底樹脂固化 月曰1 0將其進行樹脂密封。 並使用密封樹 密封出將如圖4B所示之條件内的批密封產物* 產物接L = = 鑛/:二的刀片12切割密封 體穿置。 各個封裝。藉此獍侍如圖2所示的半導 [第二實施例] 其後將敘述本發明第二實施例。 一以下將解說如圖2所示的第一實施例與如圖6所示的 一實施例之間的區別。 首先，在第二實施例中，密封樹脂10僅形成在金屬區 塊7的内侧，而不會形成在金屬區塊7的外侧表面上。 第二，以焊料球14取代基板電極4來形成在樹脂基板i 的背面該侧處。且在第二實施例中乃是應用膠粒，其中僅 在表面該側形成電極。 參照圖7A至8C，以下將敘述本發明第二實施例的製造 方法。 如圖7A所示，在樹脂基板丨中開啟通孔2，並在通孔2 中形成導電端子3。此步驟實質上與第一實施例相同。 接下來，箱者使用遮蔽印刷法將銀嘗施加至銅端子3 的上表面上以便形成基板電極4，如圖7B所示。 之後’將上面具有凸塊電極6並施以作為導電黏著層
501255 五、發明說明（7)
1 3之銀膏的膠粒5翻轉。然後，將翻轉後的膠粒5放置在義 板1上’並在其上覆蓋金屬區塊7。 接著，將膠粒5連同銀膏一併烘烤，並將其黏貼到樹 脂基板1。此外，以金屬區塊7圈住樹脂基板1與膠粒5。在
此’應注意可將作為導電黏著層1 3的銀膏施加在金屬區 7該侧處。 °° I 其後，讓設有膠粒5與金屬區塊7的樹脂基板丨橫向落 下，如圖8A所示。此外，將密封樹脂供應至由樹脂基板工 與金屬區塊7所環繞之空間的内側，並將該密封樹脂 以便形成密封樹脂1〇。 接下來’以焊料球1 4圈住導電端+ 3的下| 8Β所示。 守电鳊子3的下表面，如圖 屬巴，：切方塊之器具的刀片12切割樹脂基板1盘全 ，塊？ ’並將其分成各個封裝敬： 所示的半導體基板。 來即獲侍如圖6 當本發明隨著其數種實施例一併揭t^ 項技術之相關人本*〜 # 併揭路k，對於熟悉該 方式中。 5兄，可藉由本發明來應用在各種其他 = 材料來取代鋼膏或銀膏。 封。又，在分開二所不的狀態中來執行樹脂密 後，可實行樹脂密封。谷線(仃)或複數線(行） 下，~Τ者在同k將金屬區塊黏貼至基;+ 可使用焊料膏來當作__ 基板與膠粒球的情況
第11頁 爾彳乍圈住構件的導電材料。 501255
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501255 圖式簡單說明 圖1 A是顯示習用案例之立體圖。 圖1B是顯示習用案例之橫剖面圖。 圖2A是顯示第一實施例的半導體裝置之平面圖。 圖2B是顯示第一實施例的半導體裝置之橫剖面圖。 圖2C是顯示第一實施例的半導體裝置之底視圖。 圖3A至3C是顯示第一實施例之半導體裝置的製造方法 之橫剖面圖。 圖4A至4C是顯示第一實施例之半導體裝置的製造方法 之橫剖面圖。 圖5是顯示第一實施例的製造步驟之平面圖。 圖6A是顯示第二實施例的半導體裝置之平面圖。 圖6B是顯示第二實施例的半導體裝置之橫剖面圖。 圖6C是顯示第二實施例的半導體裝置之底視圖。 圖7A至7C是顯示第二實施例之半導體裝置的製造方法 之橫剖面圖。 圖8A至8C是顯示第二實施例之半導體裝置的製造方法 之橫剖面圖。 _ 符號說明】 樹脂基板 通孔 導電端子 基板電極 、2.2 膠粒
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Claims (1)

  1. 1· 一種半導體裝置，其包含： 一絕緣基板，其具有複數個通孔； y複數個導電端子，其係埋在談通孔中，而該導電* 係至 > 劃分為一第一導電端子與一對第二導電端子丨而子 一半導體元件，其至少具有位在表面的一表面 而該表面電極係以面朝下法連接至該第一導電端子；極’ τ首却Γ金屬區塊，以橫剖面視其為方形拱狀，且其具右 並以該兩端部圈住該第牛之：背面圈住該頂部， -密封樹脂，其用以密導體元件。 2. 子 如申請專利範圍第1項的半導體裝置，其中： 該f導體元件具有位在背面的一背面電極，且， 忒老面電極係經由該金屬區塊連接至該第二導電端
    3. 〇 如申請專利範圍第1項的 各個該第一與第二導電 半導體裝置，其中： 端子係藉著使用銅膏形成的
    4·如申請專利範圍第1項的半導體裝置，其中： -第-基板電極係形成在該第一導電端子上，且， 该表面電極係經由該第一基板電極連接至該第一導 端子。
    /、、申請專利範圍 ^ ----- •如申請專利範圍第4項的半導體裝置，其中： 忒第一基板電極係藉著使用銀膏形成的。 •如_申請專利範圍第1項的半導體裝置，其中·· 第二基板電極係形成在該第二導電端子上，且， 端=金屬區塊係經由該第二基板電極連接至該第二導電 如申请專利範圍第6項的半導體裝置，其中： 以第二基板電極係藉著使用銀膏形成的。 如申清專利範圍第1項的半導體裝置，其中： 該表面電極包含有一凸塊電極。 如申睛專利範圍第i項的半導體裝置，其中： ^絕緣基板包含有一樹脂基板。 缘美拓種：：體裝置之製造方法，該半導體裝置具有-絕 緣基板，該製造方法包含下列步驟：有、、、邑 在該絕緣基板中，開啟複數個通孔； 少劃t ί ΐ ΐ:暮ΐ:複數個導電端子，該導電端子係至 一" 導電端子與一對第二導電端子； 藉者將該表面電極以面朝下法連接至該 子，來設置一半導體元件，其至少具有位在該絕上 501255 六、申請專利範圍 之表面的一表面電極； 設置一金屬區塊，其中以橫剖面視該金屬區塊為方形 拱狀，且其具有一頂部與兩端部，而該金屬區塊係藉著以 該半導體元件之一背面圈住該頂部，並以該兩端部圈住該 第二導電端子來設置的；以及， 樹脂密封該半導體元件。 11. 如申請專利範圍第1 0項的半導體裝置之製造方法，更 包含下列步驟： 在該第一與第二導電端子之上下表面上，形成基板電 極0 12. 如申請專利範圍第10項的半導體裝置之製造方法，其 中： 該背面與該兩端部係各自藉著使用焊料膏圈住該頂部 與該第二導電端子。 13. 如申請專利範圍第1 0項的半導體裝置之製造方法，其 中： 該半導體元件係以一矩陣形狀設置在該絕緣基板上， 且， 該金屬區塊係形成在與該半導體元件共通的一矩形 中 0
    第17頁 501255 六、申請專利範圍 14. 如申請專利範圍第10項的半導體裝置之製造方法，其 中： 該樹脂密封係藉著使用一移動成形法或一封裝法所執 行的。 15. 如申請專利範圍第1 4項的半導體裝置之製造方法，更 包含下列步驟： 在樹脂密封後，藉著切割該絕緣基板，來分成獨立的 半導體元件。 16. 一種半 緣基板，該 在該絕 在該通 導體裝 製造方 緣基板 置之製造方法，該半導體裝置具有一絕 法包含下列步驟 中，開啟複數個 孔中，埋入複數個導電 少劃分為一第一導電端子與一對第 該表面電極經由導電黏 置一半導體元件，其具 藉著將 端子，來設 表面的一表面電極 設置一金屬區塊，其中以橫剖 具有一頂部與兩端部， 件之一背面經由該導電 該導電黏著劑與 拱狀，且其 該半導體元 並讓該兩端 設置的；以 黏住該 通孔； 端子，該導電端子係至 二導電端子； 著劑連接至該第一導電 有位在該絕緣基板上之 面視該金屬區塊為方形 而該金屬區塊係藉者讓 黏著劑與該頂部接觸， 該第二導電端子接觸來 部經由及， 半導體元件，致使以該表面電極與該兩端部圈
    第18頁 六、申請專利範圍 住該第一與第二導電端子，且以該背面圈住該 及 了貝部；以 樹脂密封該半導體元件 7·如申請專利範圍第1 6項的半導體裝置之製造方 法，其 該導電黏著劑包含有導電膏。 ··如申綣專利範圍第丨7項的半導體裝置之製造方 該導電膏包含有焊料膏或銀膏。 1中9..如申請專利範圍第16項的半導體裝置之製造方法，其 該半導體元件係以一矩陣形狀設置在該絕緣基板上， 該金屬區塊係形成在與該半導體元件共通的— 法，其 且 中 矩形 2中。.··如申請專利範圍第16項的半導體裝置之製造方 該樹脂密封係藉著使用一 行的 法，其 動成形法或一封裝法所執 第19頁 501255 六、申請專利範圍 21.如申請專利範圍第1 6項的半導體裝置之製造方法，更 包含下列步驟： 在樹脂密封後，藉著切割該絕緣基板，來分成獨立的 半導體元件。
    第20頁
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