TW493254B - Semiconductor device, its manufacturing method and electrodeposition frame - Google Patents
Semiconductor device, its manufacturing method and electrodeposition frame Download PDFInfo
- Publication number
- TW493254B TW493254B TW090109265A TW90109265A TW493254B TW 493254 B TW493254 B TW 493254B TW 090109265 A TW090109265 A TW 090109265A TW 90109265 A TW90109265 A TW 90109265A TW 493254 B TW493254 B TW 493254B
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- Taiwan
- Prior art keywords
- metal layer
- semiconductor
- resin
- semiconductor unit
- metal
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 156
- 238000004070 electrodeposition Methods 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 229920005989 resin Polymers 0.000 claims abstract description 76
- 239000011347 resin Substances 0.000 claims abstract description 76
- 238000007789 sealing Methods 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims description 171
- 229910052751 metal Inorganic materials 0.000 claims description 171
- 239000000758 substrate Substances 0.000 claims description 66
- 238000000034 method Methods 0.000 claims description 26
- 238000005520 cutting process Methods 0.000 claims description 21
- 241000218691 Cupressaceae Species 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 38
- 239000010408 film Substances 0.000 description 23
- 239000010931 gold Substances 0.000 description 20
- 229910052759 nickel Inorganic materials 0.000 description 19
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 17
- 239000010409 thin film Substances 0.000 description 17
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 16
- 229910052737 gold Inorganic materials 0.000 description 16
- 229910000531 Co alloy Inorganic materials 0.000 description 13
- 239000011521 glass Substances 0.000 description 12
- 239000004593 Epoxy Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 230000002079 cooperative effect Effects 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 229910001020 Au alloy Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000003353 gold alloy Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 230000009193 crawling Effects 0.000 description 2
- 238000004512 die casting Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- 238000005453 pelletization Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000002659 electrodeposit Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
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- H01L2924/351—Thermal stress
Description
A7 、發明說明 L發明之領域 (請先閱讀背面之注意事項^^|||寫本頁) 。本發明係關於一個半導體元件、其製造方法以及一個 i ”積7|?,且更特別地,係關於一個無導線之表面安裝的 樹脂密封之半導體元件、其製造方法、以及一個上面安裝 有一個半導體元件之電沉積架。 2·相關技藝之敘述 第8圖是一個剖面圖,其顯示一個傳統半導體元件係 為一個無導線之表面安裝的樹脂密封之半導體元件。 如從第8圖可看出的,金屬層31及32被形成在一個玻璃 裒氧基材(或陶瓷基材)之前表面上,而一個電極金屬層h 破形成在該基材之後表面上,俾以對應於金屬層&。金屬 層32與金屬層5a係經由通孔6而彼此被電氣地連接。 一個半導體單元體2被搭接在玻璃環氧基材1之金屬 層31上。半導體單元體2之電極墊以與金屬層3〗是藉由接線 4被電氣地連接。具有接線之半導體單元體藉由環氧樹脂7 而被樹脂密封之。 經濟部智慧財產局員工消費合作社印製 如第8圖中所示的,於傳統的無導線之表面安裝型式 的半導體元件中,一大量數量之通孔6被形成在玻璃環氧基 材1上,一大量數量之金屬層31被形成在玻璃環氧基材1上 ’且半導體單元體2被搭接至每一個金屬層31。半導體單元 體經由接線4被連接至金屬層32。 於製造一個半導體元件的一個加工過程中,呈數百個 坐落於一個單一的玻璃環氧基材上之半導體單元體被接線 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 4 A7 B7 五、發明說明(2 搭接且被樹脂密封之。 (請先閱讀背面之注意事項\^^寫本頁) 因此’於具有一個如此之一結構之半導體元件中,通 孑L6之數i疋為半導體單元體2之數量的數倍,因而使得用 以形成通孔之人力工時之數量不容忽視。此已成為增高此 種半導體元件製造成本的一個原因。 再者’於無導線之表面安裝型式的半導體元件中,為 了在一個介於相鄰之半導體元件之間的間隙中形成一個通 孔,必須在該間隙中預備一個能讓通孔形成的區域。因此 ,能夠被安裝在單一個玻璃環氧基材上之半導體單元體的 實際數量受到限制。此亦為增高製造成本的一個原因。 再者,於無導線之表面安裝型式的半導體元件中,被 安裝在玻璃環氧基材上之半導體元件是被樹脂密封。因此 ,當半導體單元體運作時所產生的熱量不會消散,而是被 儲存在玻璃環氧基材内。意即,傳統之無導線之表面安裝 型式的半導體元件具有不良的散熱性。 發明之概要說明 為了要除去上文所述之缺點’本發明已被達成。 經濟部智慧財產局員工消費合作社印制衣 本發明之一個第一目標是提供一個無導線之表面安 裝型式的半導體元件,其能夠以低成本被製造並提供改善 之散熱性。 本發明之一個第二目標是提供一種用以製造該一半 導體元件之方法。 為了達到該第一目標,半導體元件包含有: 一個半導體單元體,其被搭接在一個第一金屬層上; 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) W254
五、發明說明(3 ) 一個接線,用以將半導體單元體之一個電極墊電氣連 接至一個第二金屬層上;以及 l· — —、----------裝—— (請先閱讀背面之注意事項寫本頁) 一個樹脂封裝體,用以密封該半導體單元體, 其中第一金屬層及第二金屬層的後表面與該樹脂封 裝體的一個底部齊平。 此種構形提供一種無導線之半導體元件,其中被密封 於樹脂封裝體内之半導體單元體被安裝在從樹脂封裝體之 底部暴露出的金屬薄膜上,且用於外部延伸之金屬層從樹 脂封裝體之底部被暴露出。於此種構形中,沒有使用一個 玻璃環氧基材或一個陶瓷基材。因此,該半導體元件可以 被製造為低高度的,藉此,源自半導體單元體之良好散熱 可被提供。由於上述之金屬層是為薄膜,相較於使用導線 之半導體元件,具有良好導電性之無導線之半導體元件可 被提供之。 --線· 經濟部智慧財產局員工消費合作社印製 由於半導體元件不需要一個昂貴的基材,其可以相當 低的成本被製造。此外,由於該等金屬層與該樹脂封裝體 在半導體基材之後表面上彼此係為齊平的,當半導體元件 被安裝在一個電路板上時,可使該半導體元件與電路板成 為緊密接觸。再者,由半導體元件所產生的熱可容易地經 由電路板被散熱。如有時需要的,一個非常薄且平坦之電 極金屬層可被沉積在用於外部延伸的金屬層的後表面上。 較佳地,上面置放有半導體單元體之第一金屬層具有 一個較半導體單元體之底部表面為大之面積。 此種構形提供一個自樹脂封裝體表面至半導體單元 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 五、發明說明(4) 體之足夠的爬行距離,因此改善半導體元件之抗潮性。 較佳地,該第一金屬層較該第二金屬層為厚,且該第 一金屬層具有一個較半導體單元體之底部面積為小之面積 〇 於此種構形中,由於上面放置有半導體單元體之金屬 層是較厚的,可提供一個自樹脂封裝體底部至半導體單元 體之足夠的爬行距離,藉此改善半導體元件之抗潮性,且 具有一個相當大尺寸的半導體單元體可被樹脂密封之。 再者,由於上面放置有半導體單元體之金屬層被製造 成為較厚的,該半導體單元體可被配置在樹脂封裝體内的 中央處。由於此因素,即使當半導體元件受到熱應力時, 樹脂封裝體都不易破裂。 於此種構形中,該第二金屬層可以呈任一種可選擇之 形狀。不用說,該第二金屬層被做成一體成型的。 依照本發明的另一個方面,本發明提供一種用以製造 一個半導體元件的方法,該方法包含的步驟有: 在一個可撓性扁平金屬基材上形成一個電沉積架,該 電沉積架圖案化而具有用於外部延伸的第—金屬層以及第 二金屬層; 分別地將數個半導體單元體(每—個的上面皆具有電 極墊)連續地安裝於第一金屬層上; 將電極墊接線搭接至坐落在料何體單元體之間 的第二金屬層; 以樹脂-密封被安裝在電沉積架上的半導體單元體;
7 493254 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(5 ) 移除金屬基材來產生一個樹脂密封體;以及 藉由以空氣來切割被形成在第一及第二金屬層上的 標記而將樹脂密封體切割成為個別的半導體元件。 這提供一種製造一個半導體元件之方法,其使用一種 可撓性扁平金屬基材而不是一種類似於玻璃環氧樹脂的基 材。經由移除電沉積架的可撓性扁平金屬基材,可以形成 具有被樹脂密封的大量半導體單元體之樹脂密封體。由於 金屬基材具有可撓性,當金屬基材自樹脂密封體移除時, 樹脂密封體不易蒙受到應力之害。 上述之製造方法,在切割步驟之後,較佳地包含有下 列步驟: 將用做電極的金屬層沉積至從該樹脂密封體之一後 表面被暴露出的第二金屬層上。 由於金屬層可藉由如有時需要的電解性或非電解性 電鍍法被沉積成具有一個非常薄之厚度,可使該等金屬層 與電路板成為緊密接觸。 於切割樹脂密封體的步驟中,是沿著每一個第二金屬 層的中心線來做切割,俾以對鄰接之半導體單元體提供用 於外部延伸之金屬層。 於此步驟中,由於鄰接之半導體元件可以連續地被安 裝在金屬基材上,該等半導體單元體可被密集地配置在金 屬基材上。 較佳地,使用金屬基材做為一個底模而將電沉積架與 半導體單元體樹脂密封在一起。於此種構形中,該等金屬 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) — — ^----------裝—— (請先閱讀背面之注意事項^寫本頁) · 493254
層可獨立地被形成在該電沉積架中。 本發明之上述及其他目的和特性從下文描述連同隨 文檢附之圖式將會成為更為明顯。 1式之簡要說明 第1A及1B圖是一個依據本發明之半導體元件的一個 具體例之一個剖面圖及其底視圖; 第2A及2B圖是一個依據本發明之半導體元件的一個 具體例之一個剖面圖及其底視圖; 第3A、3B及3C圖分別是一個金屬基材之一個平面圖、 一個具有一個圖案化金屬層之金屬基材的一個平面圖以及 一個該圖案化金屬層之一個放大的局部剖視平面圖; 第4A至4E圖是為剖面圖,其等顯示在依據本發明的一 種用以製造一個半導體元件的方法之具體例中個別的步驟 第5八皇4^圖事剖面圖,其等顯示在依據本發明之一 個用以製造一-丰|體元件的方法之具體例中,接隨在第 4E圖之步驟後的個別步驟; 第6A及6B圖分別是一個樹脂密封體之一個部分局部 剖視透視圖以及該樹脂密封體的一個底視圖; 第7圖是依據本發明之半導體元件的另外一個具體例 的一個底視圖;以及 第8圖是一個傳統的半導體元件的一個剖面圖。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) J— ’----------裝— (請先閱讀背面之注意事項寫本頁) · 線 經濟部智慧財產局員工消費合作社印製 493254 A7 B7、發明說明(7) 經濟部智慧財產局員工消費合作社印制衣 元件標號對照表 1 玻璃環氧基材 2 半導體單元體 2a 電極塾 3ι、32 金屬層 4 接線 5a、 金屬層 6 通孔 7 環氧樹脂、樹脂封裝體 7a、7b 凹槽 8a、8b 金屬層 8c 金屬層、金薄膜 9 金屬基材 9a、9b 9b、9d 切粒標記 10 光罩 10a、10b 光阻 11 樹脂密封體 13 金屬層 E 區域 S 切粒線 SI > S2 切割線 Mil ' M12 切粒標記 M2 卜 M22 切粒標記 較佳具體例之描述 現在參照圖式,將對依據本發明之一個半導體元件的 多種不同具體例、一種製造方法及一個被使用於該方法中 之電沉積架來提供一個說明。一個具體性說明被提供給本 發明所針對之一個經樹脂密封的無導線之表面安裝的半導 體元件。 第1A及1B圖是依據本發明的一個無導線之表面安裝 的半導體元件的一個具體例之一剖面圖及其一底視圖。於 此等圖式中’參考編號2標示的是一個具有電極塾形成於上 之半導體單元體。參考編號7標示的是一個用以密封該半導 體單元體2之樹脂封裝體。半導體單元體2之電極墊2a藉由 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項本頁) 裝 --線· 10 493254 A7 B7
五、發明說明(8 ) 接線4被電氣連接至用於外部延伸之金屬層8a。 .k---,111-------壯衣—. (請先閱讀背面之注咅?事項^|||寫本頁) 半導體單元體2被搭接至一個金屬層朴。金屬声朴之 面積較該半導體單元體2的底部面積為寬。半導體單元體] 被搭接在金屬層8b之中央處。該半導體單元體2之底面積j 於金屬層8b之底面積,藉此,在該半導體單元體2與樹脂封 裝體7之間提供一個足夠的攸行距離。 金屬層8a及8b之底部自樹脂封裝體7被暴露出。金屬層 3a及8b之向外露出的平面與樹脂封裝體7之底部表面齊平 。扁平之薄膜金屬層8c被形成在金屬層心及朴的底部表面 上0 金屬層8a及8b各自係由下列所構成:一個具有被電沉 積在被暴露出之側上的鎳或鎳鈷合金之鎳或鎳-鈷薄膜,以 及一個金(Au)或銀(Ag)薄膜。鎳或鎳鈷合金薄膜係為2〇_35 μηι,而金(Au)薄膜為〇.05_3 μιη。金屬層以是由下列所構成 •一個鎳或鎳鈷合金之鎳或鎳-鈷薄膜,以及一個錫(Sn)、 金(Au)或銀(Ag)之薄膜。鎳或鎳鈷合金薄膜為大約5 。 錫(Sn)薄膜為3-15μιη。金(Au)或銀(Ag)薄膜為大約〇.3 μηι 〇 經濟部智慧財產局員工消費合作社印製 當该鎳或鎳-鈷薄膜是在一個具良好可焊性的金屬薄 膜(諸如金或金合金)已被沉積於金屬基材之表面上之後方 被沉積時,不需要去形成金屬層8c。 須注意的是,依據本發明之半導體元件不是針對一種 於内樹脂密封有被安裝在一個玻璃環氧或陶瓷基材上之一 個半導體單元體及其他構件之封裝結構,而是一種當中有 本紙張尺度適用中國國家標準(CNS)A4規格(21〇 X 297公釐) 11 493254 A7 B7 五、發明說明(9 ) 半V體單元體被包封於一個樹脂封裝體中並且金屬薄膜自 樹脂封裝體被暴露出之結構。 因此,由於本發明之半導體元件不需要有半導體單元 體安裝於上之基材,本發明之半導體元件的高度可以是低 的。此允终本案半導體元件可平衡地被安裝在一個印刷電 路板上。 於是,依照本發明之半導體元件具有一個優點是,當 那些構件被安裝在印刷電路板上時難以豎起。另外,半導 體元件可以一種方式被安裝在印刷電路板上,而使得該半 導體元件可借助被施加於其底部的黏著劑而被搭接至該印 刷電路板。 參見弟2 Α及2Β圖,將就本發明之第二具體例來提供一 個說明。 第2A及2B圖係為依據本發明的半導體元件之一個具 體例之一剖面圖及其底視圖。在顯示於第2圖之半導體元件 中,金屬層8b較顯示於第1圖之半導體元件的金屬層扑為厚 ’且半導體早元體2之底部面積大於金屬層8b所具者。因此 ,該半導體單元體2以距離樹脂封裝體7之底部為大約2〇 μπι (或更高)之高度被密封在樹脂封裝體7内。 因此,於依照本發明之半導體元件中,在半導體單元 體2與樹脂封裝體7底部之間提供有一足夠的爬行空間。此 外,具有一個相當大的尺寸之半導體單元體2可被樹脂密封 之 再者,由於半導體元件被樹脂密封而藉此樹脂被伸延 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) l· II^——I------裝—— (請先閱讀背面之注意事項寫本頁) » 線 經濟部智慧財產局員工消費合作社印製 12 493254
五、發明說明(10) 半‘體單元體2之底部,這提供一個足夠的爬行距離,而 藉此使得半導體元件能夠具有^抗潮性。 I l· — ^----------裝--- (請先閱讀背面之注意事項t、寫表頁) 再者,一個相當大的單元體可以樹脂密封在一個小體 積的樹脂封裝體内。 第2A及2B圖中的半導體元件之其他結構係相同於第 1A及1B圖中所不之半導體元件所具者,而於此不作敘述。 參照第3至第6圖,將對一種用以製造一個如第丨圖中 所示的半導體元件之方法的一個具體例來提供一個說明。 此製造方法是針對一種當中有一個無導線之表面安裝的半 導體元件被形成在一個可撓性平板金屬基材上而且該金屬 基材被移除之加工過程。 --線· 首先,製備一個可撓性平板金屬基材9。金屬基材9是 由厚度為0.1mm之不銹鋼薄片所製成。金屬基材9具有被使 用於該金屬基材之自動化傳輸的孔如及9b,以及被使用於 將該金屬基材孔固定至一個製模中的孔。 經濟部智慧財產局員工消費合作社印製 第3B圖顯示一個電沉積架,於内形成有一個要讓半導 體單元體安裝於上的金屬層之一個圖案。於電沉積架之中 ,坐落在該金屬基材9之一侧上的半導體單元體2被樹脂密 封’藉此,一個樹脂密封體被形成在金屬基材之一側上。 現在參照第4及第5圖,將對一個用以製造一個依據本 發明之半導體元件的方法之第1至第8個步驟來作一說明。 1)第1個步驟是藉由電沉積來將一個金屬薄膜電沉積 在一個金屬基材9(例如不錄鋼)之一側的整個表面上。首先 ,藉由旋轉塗覆法將一個光敏性光阻薄膜施加在金屬基材 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 13 493254 A7 B7 五、發明說明(11 ) 的該一個表面上。由此被施加的整個光阻薄膜被曝光而致 使其被硬化。 將具有一個光罩之金屬基材9浸潰在一個電沉積浴中 ’俾以在金屬基材的另一個表面上形成一個金屬層8。金屬 層8是為一個藉由電沉積被形成的鎳或鎳鈷合金薄膜。因此 ,於鎳或鎳鈷合金薄膜上,金藉由真空沉積使用沖洗技術 或滅射法而被沉積之。 特別地’ 一道電流通過位於電沉積浴内之金屬基材9 與一個電極之間,藉此而形成由鎳或鎳鈷合金薄膜構成之 金屬層8。該鎳或鎳鈷合金薄膜具有一個厚度為,例如, 20·35 μηι,而金薄膜具有一個厚度是〇·3 μιη。 附帶一提的是,藉由於電沉積鎳或鎳鈷合金薄膜之前 ’藉由真空沉積以沖洗技術將一個含有金的一個合金真空 電沉積在金屬基材9上,隨後之形成一個電極金屬層的步驟 可以被省去。 2)第2個步驟是蝕刻該金屬層8。如第4Β圖所示的,於 此#刻步驟中,一個由光阻膜所構成之光罩1〇被形成在金 屬基材9的一面。光阻10a及1〇b被選擇性地形成在金屬基材 9的金屬層8之上。 因此,如第4C圖中所示的,金屬層8被選擇性地蝕刻 之’俾以形成一個具有金屬層8&及8b被形成在金屬基材9 之該一側上的電沉積架。如第36圖所示的,該電沉積架具 有一個區域E,於該區域之上將有一個半導體單元體被形 成’而且一個金接線將被接線搭接至該半導體單元體。於 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -l·------------裝--- , - (請先閱讀背面之注意事項寫本頁) . -線· 經濟部智慧財產局員工消費合作社印製 14 493254 A7 B7 五、發明說明(U) 該E區域上,金屬層8&及8|3被形成為呈一個矩陣的形狀。 第3 C圖顯示該等金屬層的一個詳細圖案。 第3C圖顯示的是,當金屬基材被移除之後,位在一個 樹脂密封體(描述於下文)之後表面上的接線搭接區域的圖 案。此圖案具有切粒標記9d及9c供用於將具有數個被樹脂 密封的半導體單元體之樹脂密封體切割成個別的半導體元 件。於切割時,切割線被設定位在切粒標記9(1及9〇之間。 3) 第3個步驟是安裝半導體單元體。如第4D圖所示的 ,於此步驟中,半導體單元體2藉由一個已知技術被安裝在 金屬層8b之上。如第1圖所示的,於每一個半導體單元體2 之表面上形成有電極墊2a。 4) 於半導體單元體2被已安裝在電沉積架上之後,製 程加工進行至一個用以將金接線4接線搭接至半導體單元 體2之第4步驟。接線4是藉由,例如超音波搭接,而被電氣 連接於半導體單元體2之電極墊2與金屬層8a之間。 5) 第4E圖中的接線搭接步驟被接續以樹脂_模製之第 5個步驟。此樹脂-模製步驟是在被安裝於金屬基材9上的半 導體單元體2已被引至接線搭接之後,將電沉積架安裝於一 個壓鑄模(上模)或一個樹脂·密封體11中。 環氧樹脂被壓入配合至形成於該壓鑄模中的腔室(未 示出)中。於此種壓鑄模中,金屬基材9充當一個底模。 上面安裝有半導體單元體之一個大量數量的電沉積 架是藉由此種方法予以樹脂密封,藉此使得每一個金屬基 材上所安裝的半導體單元體是呈平行排列,且環氧樹脂被 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) l·------------裝 i «- (請先閱讀背面之注意事項^^寫本頁) 訂· i線- 經濟部智慧財產局員工消費合作社印製 15 493254
五、發明說明(13) 壓入配合在個別的金屬基材與上模之間。 6)如第5B圖中所示的,樹脂模製步驟後接隨的是一個 (請先閱讀背面之注意事項}寫本頁) 要移除忒金屬基材之第6個步驟。如第5B圖所示的,金屬 基材9自樹脂密封體職移除之。其為_種可撓性片板之金 屬基材9能夠容易地自樹脂密封體⑴皮移除之。金屬層^ 及8b從樹脂密封體_底部被暴露出。金屬㈣及朴之被 露出的表面係與樹脂封裝體u的底部齊平。#鎳或㈣合 金薄膜被暴露出時,接續移除步驟被接續以—個為切粒步 驟之第7個步驟。 7)如第5D圖中所#,第7個步驟是沿切粒線味切粒該 樹脂密封體。該密封體被切開以提供產生半導體單元體。 特別地,該樹脂密封體丨丨是從介於半導體單元體2之間的每 一個金屬層8a的中心、線被切割,俾以提供個別的半導體元 件0 經濟部智慧財產局員工消費合作社印製 現,照第6A及6B圖,將對該切割步驟(即第7步驟)來 提供-個說明。第6A圖是一個具有大量數目之被樹脂密封 的半導體元件的樹脂密封體_—個部分局部剖面透視圖 。第6B圖是該樹脂密封體的一個底視圖。 於此等圖式中,S1及S2分別地意指切割線。被形成於 樹脂密封體11中的凹槽7a及7b係自金屬基材9之底部沿著 切割線S1及S2被切割,藉此,樹脂密封體u被分割成為個 別的半導體元件。 如第6B圖(其為樹脂密封體11的一個底視圖)中所示的 ,電極金屬層8a是沿著介於切粒標記Mu及之間的切 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 16 493254 A7
於外部延伸 金屬層8b是沿著介於切割標記贿及助之間的切割 線被切割。因此,樹脂密封體U||由此種方式被分割成 個別的半導體元件,而使得其係於切割步驟中沿切割線 及S 2被切割之。 接續於切割步驟之後的是一個用以製作一個電極之 第8步驟。 —8)如第丨及2圖所示的,於第8步驟中,金薄膜以分別 地藉由沖洗技術或電解性或非電解性電鍍法被施加至位在 每一個藉此被切粒的每一個個別的半導體元件之樹脂密封 體2的底部處的金屬層仏及处上。再者,一個鎳或錄七合 金薄膜被電沉積地沉積在每一個金層上以完成一個外部電 極0 電沉積架之製造不僅可藉由上文所述之技術,且可以 藉由其他之技術。亦即,於金或金合金薄膜被形成在金屬 基材上之後,該金薄膜可被圖案化,然後可將鎳或鎳_鈷合 金薄膜予以電沉積在該金薄膜上。 位於金屬基材上之金或金合金薄膜以一種狀態(當中 有一個光阻被電沉積在金屬基材的整個表面上,且於其另 一個表面被圖案化)被選擇性地電沉積在金屬基材9之上, 藉此,該金屬基材對應於有半導體單元體以及金屬層被安 裂的區域之表面將被形成為被曝露出來,而其餘的區域則 為光阻所覆蓋。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) .L.--------------- (請先閱讀背面之注意事項^^寫本頁) . 線 經濟部智慧財產局員工消費合作社印製 17 ^254
五、發明說明(l5) 被圖案化的光阻之後被移除。一個鎳或鎳·鈷合金薄膜 被形成在上面已被形成有金薄膜的整個表面之上。然後, 該鎳或鎳-始合金薄膜被選擇性地移除。 經由此種製造加工,金屬層8a及8b係如同參照上述具 體例所解說地被形成於金屬基材9之上。相同於上述之接續 的步驟在此將不作說明。 於上文所述之具體例中,金屬基材9是由具有一個厚 度為0 · 1 mm之不錄鋼所製成。然而,此厚度不應被限制為 此數值。於此例中,金屬基材較佳地是從帶有被樹脂密封 之半導體單元體的樹脂密封體被移除之。 於當中的金屬基材是由銅所製成之傳統的半導體元 件中,銅基材必須藉由蝕刻被移除。然而,不銹鋼基材能 夠容易地自樹脂密封體被移除。舉例而言,不銹鋼可以是 曰本工業標準之標註系統中的SUS中的任何一種。 經濟部智慧財產局員工消費合作社印製 7 7------裝--- (請先閱讀背面之注意事項^^^|^寫本頁) -線· 當如第2圖中所示的半導體元件係被製造成為其中上 面安裝有半導體單元體2的金屬層8b係較金屬層8a為厚時 ,於金屬層8a已被形成在金屬基材上之後,利用一個用以 形成金屬層8b之光阻,該金屬基材被浸潰一段較電沉積金 屬層8a所需的時間為長之時間來電沉積金屬層扑。接續的 步驟已描述於上文。 如從第7圖可看出所的,該圖顯示半導體元件的底部 ,自樹脂封裝體7被暴露出的金屬層13具有一個平整的表面 ,且被密封在樹脂封裝體7中的半導體單元體2之電極墊。 藉由接線4被電氣連接至該金屬層13。
18 493254 A7 五、發明說明(ι〇 如上文所述,在依槔本發明之半導體元件中,半導體 單元體被密封在樹脂封震體内,藉此,用於外部延伸的金 屬層自樹脂封裝體之底部被暴露出。此外,樹脂封裝體之 底部與用於外部延伸的金屬層之底部齊平。鎳或鎳鈷合金 薄膜以及金薄膜被形成在金屬層上以作為外部電極。^卜部 電極自樹脂封裝體底部稍微地突出。因此,該半導體元件 能夠被安裝在一個電路板上,而藉此使該半導體元件之底 部接觸電路板。 LIIH---------裝·! (請先閱讀背面之注意事項再Μ寫本頁) --線· 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 19
Claims (1)
- 寻利範圍 1 · 一餌半導體元件,其包含有: 一個半導體單元體,其被搭接在一個第一金屬層上 -個接線,用以將半導體單元體的電極墊電氣連接 至一個第二金屬層;以及 一個樹脂封裝體,用以密封該半導體單元體, 其中該第-金屬層及該第二金屬層的後表面與該樹脂 封裝體的一個底部齊平。 2·如申請專利範圍第W的半導體元件,其中該第一金屬 層具有-個較該半導體單元體之—底表面為大的面積。 如申請專利範圍第W的半導體元件,其中該第一金屬 層較該第二層金屬層為厚,且該第一金屬層具有_個較 該半導體單元體之底表面為小的面積。 如申請專利範圍第W的半導體元件,其中該第二金屬 層是個別地自該樹脂封裝體之一個底部被暴露出。 一種用以製造-個半導體元件的方法,其包含下列步驟 於一個可撓性扁平金屬基材上形成一個電沉積架 ,該電沉積架被圖案化而具有用於外部延伸之第—金屬 層以及第二金屬層; 分別地將數個半導體單元體(每一個的上面皆具有 電極墊)連續地安裝於第一金屬層上; 將電極墊接線搭接至坐落在該等該等半導體單元 體之間的第二層金屬層;乂树月曰饴封被女裝在該電沉積架上的該等半導體 單元體; 移除該金屬基材來提供一個樹脂密封體;以及 藉由以空氣來切割被形成在第一及第二金屬層上 的標記而將該等樹脂密封體切割成為個別的半導體元 件。 申明專利範圍第5項的方法,其於切割步驟之後更進 —步包含下列步驟: 一/將用做為電極的金屬層沉積至從該樹脂密封體之 一後表面被暴露出的第二金屬層上。 7·如申請專利範圍第5項的方法,其中 於切割該樹脂密封體的步驟中,是沿著每一個第二 ^屬層中心、線來做切割,俾以對鄰接的半導體單元體 提供用於外部延伸之金屬層。 如申明專利犯圍第5項的方法,其中使用金屬基材做為 一個底模而將該電沉積架與該等半導體單元體樹脂密 封在一起。 ---^ (請先閱讀背面之注意事項再喊寫本頁) . •線- 經濟部智慧財產局員工消費合作社印製 1 x 297公釐) 21
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US20010033018A1 (en) | 2001-10-25 |
JP2002016181A (ja) | 2002-01-18 |
US6800508B2 (en) | 2004-10-05 |
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