TWI527166B - The package structure of the optical module - Google Patents

The package structure of the optical module Download PDF

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Publication number
TWI527166B
TWI527166B TW102126688A TW102126688A TWI527166B TW I527166 B TWI527166 B TW I527166B TW 102126688 A TW102126688 A TW 102126688A TW 102126688 A TW102126688 A TW 102126688A TW I527166 B TWI527166 B TW I527166B
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Taiwan
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light
substrate
optical module
light emitting
light receiving
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TW102126688A
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TW201505133A (zh
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Ming-De Du
yao-ting Ye
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Priority to TW102126688A priority Critical patent/TWI527166B/zh
Priority to JP2013225331A priority patent/JP2015026798A/ja
Priority to US14/073,567 priority patent/US9190398B2/en
Priority to US14/563,408 priority patent/US20150091024A1/en
Publication of TW201505133A publication Critical patent/TW201505133A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/165—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Led Device Packages (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Description

光學模組的封裝結構
本發明係與封裝結構有關，特別是指一種光學模組的封裝結構。
目前近接光學感測模組儼然已成為新一代智慧型電子裝置(例如智慧型手機)的主流技術選擇，當該電子裝置貼近耳朵(臉部偵測)或者放置於口袋中時，該模組將立即關閉螢幕顯示以節省耗電並避免意外的碰觸，以帶來更佳的使用體驗，而該模組之作動原理係利用一光發射晶片發射(例如發光二極體LED)一光源，該光源經由物體表面之反射而投射至一光接收晶片，再轉換成電子訊號進行後續處理，例如台灣第M399313號專利案之近接感測封裝結構，該案之封裝結構包含有一基座、一垂直連結基座四周圍之檔牆，以及一蓋合於檔牆上之蓋板，並以此形成一容置空間，容置空間中設有一隔板，用以區隔容置空間，藉此，光發射晶片與光接收晶片得以區隔設置於基板上，以避免相互受到光源之干擾而降低產品效能。
然而，隨著科技之發展，可攜式裝置(例如智慧型電子手機、數位相機等電子產品)於此之應用更是日益廣泛，並且有傾向輕薄、低成本以及高良率之趨勢，然而上述之專利要滿足該趨勢已逐漸有力不從心意象。
本發明之主要目的在於提供一種光學模組的封裝結構，其可簡化封裝製程，並降低製作之成本。
為了達成上述之目的，本發明之一種光學模組的封裝方法，該方法包含有下列步驟：(a)於基板上定義出一光發射區及一光接收區；(b)將光發射晶片與光接收晶片分別電性連接於該基板之光發射區及光接收區；(c)形成一可透光之封裝膠體於該光發射晶片與該光接收晶片之上；(d)形成一不透光之遮蔽層於該封裝膠體及該基板之上；以及(e)移除位於該光發射晶片與該光接收晶片上方之該遮蔽層。
其中該封裝膠體與該遮蔽層係以模壓之方式所形成。
其中該封裝膠體之形狀概呈凸型。
其中該遮蔽層之移除係採研磨方式，且研磨至該封裝膠體之凸型頂端曝露為止。
其中該電性連接之方法係為打線製程及上片製程。
其中更包含有一步驟(e)，係將該步驟(a)至步驟(d)所製成之該光學模組進行切割或衝切。
本發明另提供一種光學模組的封裝結構，包含有： 一基板，定義出一光發射區及一光接收區；一光發射晶片，設於該基板之光發射區；一光接收晶片，設於該基板之光接收區；二封裝膠體，分別包覆於該光發射晶片及該光接收晶片；以及一遮蔽層，係形成於該基板與各該封裝膠體之上，且具有一光發射孔及一光接收孔，該光發射孔及該光接收孔分別位於該光發射晶片及該光接收晶片之上方。
其中各該封裝膠體及該遮蔽層分別為透光及不透光之樹脂。
其中該基板為有機材質之雙馬來醯亞胺三嗪(Bismaleimide Triazine)基板等非陶瓷基板。
於此，本發明之光學模組的封裝結構僅需移除位於光發射晶片及光接收晶片上方之遮蔽層，並使封裝膠體之頂端顯露於外部即可完成，如此可簡化封裝製程，更可降低製作之成本。
為使 貴審查委員能進一步了解本發明之構成、特徵及其目的，以下乃舉本發明之若干實施例，並配合圖式詳細說明如後，同時讓熟悉該技術領域者能夠具體實施，惟以下所述者，僅係為了說明本發明之技術內容及特徵而提供之一實施方式，凡為本發明領域中具有一般通常知識者，於了解本發明之技術內容及特徵之後，以不違背本發明之精神下，所為之種種簡單之修飾、替換或構件之減省，皆應屬於本發明意圖保護之範疇。
10‧‧‧光學模組封裝結構
20‧‧‧基板
22‧‧‧光發射區
24‧‧‧光接收區
30‧‧‧光發射晶片
40‧‧‧光接收晶片
50‧‧‧封裝膠體
60‧‧‧封蓋
62‧‧‧光發射孔
64‧‧‧光接收孔
以下將藉由所列舉之實施例，配合隨附之圖式，詳細說明本發明之技術內容及特徵，其中：第1圖為本發明一較佳實施例所提供之俯視圖。
第2圖為本發明該較佳實施例所提供之剖視圖，其為第1圖沿2-2剖線。
第3圖為本發明該較佳實施例所提供之封裝流程示意圖。
請先參閱第1圖至第2圖所示，本發明一較佳實施例所提供之光學模組的封裝結構10係切割取自於一般封裝陣列(Array)之一模組，包含有一基板20、一光發射晶片30、一光接收晶片40、二封裝膠體50以及一遮蔽層60。
該基板20為有機材質之雙馬來醯亞胺三嗪(Bismaleimide Triazine)基板等非陶瓷基板，藉此，該基板20之材料成本較低，且於該基板20上定義出一光發射區22及一光接收區24；該光發射晶片30與該光接收晶片40係分別經上片(Die Attach)及打線(Wire Bond)製程而設於該基板20之光發射區22及光接收區24，其中該光發射晶片30用以發射光源，該光接收晶片40則用以接收由該光發射晶片30所發射出之光源；各該封裝膠體50為透光之樹脂，例如透明的環氧樹脂(Epoxy Resin)為例，且各該封裝膠體50分別以模壓之方式包覆於該光發射晶片30及該光接收晶片40上；以及 該遮蔽層60為不透光之樹脂，例如不透光之環氧樹脂(Epoxy Resin)為例，係形成於該基板20與各該封裝膠體50之上，且具有一光發射孔62及一光接收孔64，該光發射孔62及該光接收孔64分別位於該光發射晶片30及該光接收晶片40之上方。
請再參閱第3圖A至D所示，為本發明光學模組的封裝方法之流程，第一步驟A係於每一陣列基板(Substrate array)之單一基板20上定義出該光發射區22及該光接收區24，並利用上片(Die Attach)及打線(Wire Bond)製程之方式將該光發射晶片30與該光接收晶片40分別電性連接於該基板20之光發射區22及光接收區24；第二步驟B係以模壓(Mold)方式將一可透光之封裝膠體50形成於該光發射晶片30與該光接收晶片40之上，以形成一保護層；第三步驟C係以模壓之方式形成一不透光之遮蔽層60於該封裝膠體50及該基板20之上；以及第四步驟D移除位於該光發射晶片30與該光接收晶片40上方之該遮蔽層60，最後再將上述步驟所構成之結構利用切割或衝切之製程使其形成單一模組。
如本發明之該較佳實施例，該第二步驟B至該第四步驟D係先將具一凸型結構之模具分別對位於該光發射晶片30及該光接收晶片40，且位於該基板20之表面，接著將透明之樹脂填入該凸型之模具中並使其覆蓋於各該晶片30、40，待該透明之樹脂定型後將該凸型模具退離，以形成一具凸型之封裝膠體50，其後將一中空之模具對位於該基板20上，並把不透光之樹脂填入該模具之中，使該不透光之樹脂 完全覆蓋該封裝膠體50，待該不透光之樹脂定型後即成為該遮蔽層60，最後，利用水平研磨之方式由該遮蔽層60之頂端逐漸往該基板20之方向進行磨削，直到該封裝膠體50之凸型頂端曝露為止，以形成該光發射孔62及該光接收孔64。此外，該研磨之深度可依需求而定，本發明將不以此為限。
總括來說，本發明之光學模組的封裝結構10藉由第一、第二次之模壓製程，以及利用研磨之方式將位於該光發射晶片30及該光接收晶片40上方之遮蔽層60進行磨削，使各封裝膠體50之頂端顯露於外部而分別形成該光發射孔62及該光接收孔64即可完成，如此一來不僅可簡化整體之封裝製程，更可大為降低製作之成本。
本發明於前揭露實施例中所揭露的構成元件，僅為舉例說明，並非用來限制本案之範圍，其他等效元件的替代或變化，亦應為本案之申請專利範圍所涵蓋。
10‧‧‧光學模組的封裝結構
20‧‧‧基板
22‧‧‧光發射區
24‧‧‧光接收區
30‧‧‧光發射晶片
40‧‧‧光接收晶片
50‧‧‧封裝膠體
60‧‧‧封蓋
62‧‧‧光發射孔
64‧‧‧光接收孔

Claims (7)

  1. 一種光學模組的封裝方法，該方法包含有下列步驟：(a)於基板上定義出一光發射區及一光接收區；(b)將光發射晶片與光接收晶片分別電性連接於該基板之光發射區及光接收區；(c)形成一可透光且形狀概呈凸型之封裝膠體於該光發射晶片與該光接收晶片之上；(d)形成一不透光之遮蔽層於該封裝膠體及該基板之上；以及(e)以研磨之方式移除位於該光發射晶片與該光接收晶片上方之該遮蔽層，直至該封裝膠體之凸型頂端暴露為止。
  2. 如申請專利範圍第1項所述之光學模組的封裝方法，其中該封裝膠體與該遮蔽層係以模壓之方式所形成。
  3. 如申請專利範圍第1項所述之光學模組的封裝方法，其中該電性連接之方法係為打線製程及上片製程。
  4. 如申請專利範圍第1項所述之光學模組的封裝方法，其中更包含有一步驟(e)，係將該步驟(a)至步驟(d)所製成之該光學模組進行切割或衝切。
  5. 一種光學模組的封裝結構，包含有：一基板，定義出一光發射區及一光接收區；一光發射晶片，設於該基板之光發射區；一光接收晶片，設於該基板之光接收區；二封裝膠體，係形狀概呈凸型，且分別包覆於該光發射晶片及該光接收晶片；以及 一遮蔽層，係形成於該基板與各該封裝膠體之上，且具有一光發射孔及一光接收孔，該光發射孔及該光接收孔分別位於該光發射晶片及該光接收晶片之上方，且各該封裝膠體之凸型頂端分別延伸至該光發射孔及該光接收孔並暴露於該遮蔽層外。
  6. 如申請專利範圍第7項所述之光學模組的封裝結構，其中各該封裝膠體及該遮蔽層分別為透光及不透光之樹脂。
  7. 如申請專利範圍第7項所述之光學模組的封裝結構，其中該基板為有機材質之雙馬來醯亞胺三嗪(Bismaleimide Triazine)基板等非陶瓷基板。
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