TW201505134A - 光學模組的封裝結構 - Google Patents

光學模組的封裝結構 Download PDF

Info

Publication number
TW201505134A
TW201505134A TW102126691A TW102126691A TW201505134A TW 201505134 A TW201505134 A TW 201505134A TW 102126691 A TW102126691 A TW 102126691A TW 102126691 A TW102126691 A TW 102126691A TW 201505134 A TW201505134 A TW 201505134A
Authority
TW
Taiwan
Prior art keywords
light
light emitting
optical module
substrate
chip
Prior art date
Application number
TW102126691A
Other languages
English (en)
Other versions
TWI509755B (zh
Inventor
ming-da Du
yao-ting Ye
Original Assignee
Lingsen Precision Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lingsen Precision Ind Ltd filed Critical Lingsen Precision Ind Ltd
Priority to TW102126691A priority Critical patent/TW201505134A/zh
Priority to US14/072,187 priority patent/US20150028358A1/en
Priority to JP2013231221A priority patent/JP2015026802A/ja
Publication of TW201505134A publication Critical patent/TW201505134A/zh
Application granted granted Critical
Publication of TWI509755B publication Critical patent/TWI509755B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/04—Systems determining the presence of a target
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4811—Constructional features, e.g. arrangements of optical elements common to transmitter and receiver
    • G01S7/4813—Housing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Led Device Packages (AREA)
  • Manufacturing & Machinery (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

本發明有關於一種光學模組的封裝結構，主要將光發射晶片及光接收晶片分別設於該基板之光發射區及光接收區；二封裝膠體分別包覆於光發射晶片及光接收晶片，且分別於光發射晶片及光接收晶片之上方形成一呈半球狀之第一、第二透鏡部；以及一封蓋以蓋封之方式固設於該基板與各該封裝膠體之上，具有一光發射孔及一光接收孔，且第一、第二透鏡部分別容置於光發射孔及光接收孔之中。藉此，本發明之光學模組封裝結構係可依需求作出不同屈率之封裝膠體，以有效提高光發射晶片之發光效率，並提升光接收晶片之接收效率。

Description

光學模組的封裝結構
本發明係與封裝結構有關，特別是指一種光學模組的封裝結構。
目前近接光學感測模組儼然已成為新一代智慧型電子裝置(例如智慧型手機)的主流技術選擇，當該電子裝置貼近耳朵(臉部偵測)或者放置於口袋中時，該模組將立即關閉螢幕顯示以節省耗電並避免意外的碰觸，以帶來更佳的使用體驗，而該模組之作動原理係利用一光發射晶片發射(例如發光二極體LED)一光源，該光源經由物體表面之反射而投射至一光接收晶片，再轉換成電子訊號進行後續處理。
然而，上述習用之近接光學感測模組於封裝完成後，由於該模組之光發射晶片所發出之光源經由物體表面反射後，該光源之功率往往已大為降低，使得相鄰之光接收晶片所接收之光訊號產生不良，甚至接收不到，進而造成上述智慧型電子裝置之訊號無法穩定且精確地作判讀。
本發明之主要目的在於提供一種光學模組的封裝結構，其可有效提高光發射晶片之發光效率，並改善光接收晶片接收不良之缺失。
本發明之次要目的在於提供一種光學模組的封裝結構，其可有效降低封裝成本，進而提升產品之競爭力。
為了達成上述之目的，本發明之光學模組的封裝結構包含有一基板、一光發射晶片、一光接收晶片、二封裝膠體以及一封蓋，該基板定義出一光發射區及一光接收區；該光發射晶片及該光接收晶片分別設於該基板之光發射區及光接收區；各該封裝膠體分別包覆於該光發射晶片及該光接收晶片，且各該封裝膠體分別於該光發射晶片及該光接收晶片之上方形成一呈半球狀之第一、第二透鏡部；以及該封蓋係以蓋封方式固設於該基板與各該封裝膠體之上，且該封蓋具有一光發射孔及一光接收孔，該光發射孔及該光接孔分別位於該光發射晶片及該光接收晶片之上方，且該第一、第二透鏡部分別容置於該光發射孔及該光接收孔之中。
其中各該封裝膠體之第一、第二透鏡部的屈率可為相同或不相同。
其中各該封裝膠體為樹脂。
其中該封蓋為一體成型，且為不透光之樹脂。
其中該基板為有機材質之雙馬來醯亞胺三嗪(Bismaleimide Triazine)基板等非陶瓷基板。
本發明另提供一種光學模組的封裝方法，該方法包含有下列步驟：(a)於基板上定義出一光發射區及一光接收區；(b)將光發射晶片與光接收晶片電性連接於基板上；(c)形成一可透光之封裝膠體於該光發射晶片與該光接收晶片；以及 (d)蓋封一不透光之封蓋於該封裝膠體及該基板之上。
其中該電性連接之方法係為打線製程及上片製程。
其中該封裝膠體係以模壓方式所形成。
其中該封蓋係以蓋封方式所形成。
其中更包含有一步驟(e)，係將該步驟(a)至步驟(d)所製成之該光學模組進行切割或衝切。
於此，本發明之光學模組的封裝結構可依需求作出不同屈率之封裝膠體，以有效提高光發射晶片之發光效率，並提升光接收晶片之接收品質，更可藉由蓋封之封裝製程將該封蓋罩蓋於該基板上，使光學模組的封裝結構較為精簡，以此降低封裝之成本。
為使 貴審查委員能進一步了解本發明之構成、特徵及其目的，以下乃舉本發明之若干實施例，並配合圖式詳細說明如後，同時讓熟悉該技術領域者能夠具體實施，惟以下所述者，僅係為了說明本發明之技術內容及特徵而提供之一實施方式，凡為本發明領域中具有一般通常知識者，於了解本發明之技術內容及特徵之後，以不違背本發明之精神下，所為之種種簡單之修飾、替換或構件之減省，皆應屬於本發明意圖保護之範疇。
10‧‧‧光學模組的封裝結構
20‧‧‧基板
22‧‧‧光發射區
24‧‧‧光接收區
30‧‧‧光發射晶片
40‧‧‧光接收晶片
50‧‧‧封裝膠體
52‧‧‧第一透鏡部
54‧‧‧第二透鏡部
60‧‧‧封蓋
62‧‧‧光發射孔
64‧‧‧光接收孔
以下將藉由所列舉之實施例，配合隨附之圖式，詳細說明本發明之技術內容及特徵，其中： 第1圖為本發明一較佳實施例所提供之俯視圖。
第2圖為本發明該較佳實施例所提供之剖視圖，其為第1圖沿2-2剖線。
第3圖為本發明該較佳實施例所提供之封裝流程示意圖。
請先參閱第1圖至第2圖所示，本發明一較佳實施例所提供之光學模組的封裝結構10，係切割取自於一般封裝陣列(Array)之一模組，包含有一基板20、一光發射晶片30、光接收晶片40、二封裝膠體50以及一封蓋60。
該基板20於本較佳實施例係以有機材質之雙馬來醯亞胺三嗪(Bismaleimide Triazine，通稱BT)基板或玻璃纖維板(通稱FR4)等非陶瓷基板，藉此，該基板20之材料成本較低，且於該基板20之表面定義出一光發射區22及一光接收區24；該光發射晶片30及該光接收晶片40分別經上片(Die Attach)及打線(Wire Bond)製程而設於該基板20之光發射區22以及光接收區24中，其中該光發射晶片30用以發射光源，該光接收晶片40則用以接收由該光發射晶片30所發射出之光源；各該封裝膠體50之材質為透光之樹脂，例如透明的環氧樹脂(Epoxy Resin)為例，各該封裝膠體50係分別包覆於該光發射晶片30及該光接收晶片40，各該封裝膠體50分別於該光發射晶片30及該光接收晶片40之上方形成一呈半球狀之第一、第二透鏡部52、54；以及 該封蓋60，為一體成型且材質為不透光之樹脂，例如不透光之環氧樹脂(Epoxy Resin)為例，該封蓋60係以封蓋之方式罩設於該基板20與各該封裝膠體50之上，且該封蓋60具有一光發射孔62及一光接收孔64，該光發射孔62及該光接孔64分別位於該光發射晶片30及該光接收晶片40之上方，且各該封裝膠體50之第一、第二透鏡部52、54分別容置於該光發射孔30及該光接收孔40之中。如本發明較佳實施例中，該第一、第二透鏡部52、54的屈率可為相同或不相同，藉此以符合不同使用上之需求，當該第一透鏡部52之屈率越大時，該光發射晶片30所發射出之光源則可涵蓋較廣之區域，而當該第二透鏡部54之屈率越小時，該第二透鏡54部則會更有效地將反射之光源進行聚焦，於此使本發明之光學模組能有效地提高光發射晶片30之發光效率，並改善光接收晶片40接收不良之缺失。
請再參閱第3圖A至D所示，本發明之光學模組封裝流程，第一步驟A係於每一陣列基板(Substrate array)之單一基板20上定義出該光發射區22以及該光接收區24；第二步驟B接著將該光發射晶片30及該光接收晶片40分別利用上片(Die Attach)及打線(Wire Bond)製程而設置於該基板20之光發射區22與光接收區24中；第三步驟C為將各該透明之封裝膠體50以模壓(Mold)方式分別於該光發射晶片30及該光接收晶片40之上方形成一呈半球狀之第一、第二透鏡部52、54；第四步驟D為將該不透明之封蓋60以蓋封之封裝方式罩設於該基板20與各該封裝膠體50之上，且該封蓋具有 該光發射孔62及該光接收孔64，該光發射孔62及該光接孔64分別位於該光發射晶片30及該光接收晶片40之上方，且各該封裝膠體之第一、第二透鏡部52、54分別容置於該光發射孔62及該光接收孔64之中，藉此以完成本發明之光學模組的封裝結構。
如本發明之該較佳實施例，該第二步驟B至該第四步驟D係先將具該第一透鏡部52與該第二透鏡部54之半球狀結構的模具分別對位於該光發射晶片30及該光接收晶片40之預定位置，且位於該基板20之表面，接著將透明之樹脂填入該模具中並使該樹脂覆蓋於各該晶片30、40，待該透明之樹脂定型後將該模具退離，以形成一具半球狀之封裝膠體50，最後，將預先加工完成之該封蓋60以黏著之方式罩蓋於該基板20或各封裝膠體50或是該基板20與各該封裝膠體50之上即可完成本發明之光學模組的封裝結構10，如此封裝方法不僅可簡化繁雜之封裝製程，更可使整體之封裝成本降低，以增進產業之競爭力。
總括來說，本發明光學模組之光發射晶片30所發射的光源會透過該封裝膠體50之第一透鏡部52再經由該封蓋60的光發射孔62投射於物體之表面，並由該物體表面所反射的光源會再經由該封蓋60之光接收孔64接收而投射在該封裝膠體50之第二透鏡部54，並將該聚焦之光源透射至該光接收晶片40，最後該光接收晶片40會將所接收到的光訊號轉換成電子訊號來做運算處理，而在發射光源與接收光源之過程中，透過該封裝膠體50之第一透鏡部52讓該光發射 晶片30所發出之光源的發光功率提升，更藉由該封裝膠體50之第二透鏡部54來提升該光接收晶片40之接收功率，進而使得該光發射晶片30所發射的光源投射在不平整之物體表面上仍可讓該光接收晶片40確實且穩定地接收到反射之光源，更可藉由蓋封之封裝製程將該封蓋60罩蓋於該基板20上，使光學模組的封裝結構10較為精簡，以此降低封裝之成本。
本發明於前揭露實施例中所揭露的構成元件，僅為舉例說明，並非用來限制本案之範圍，其他等效元件的替代或變化，亦應為本案之申請專利範圍所涵蓋。
10‧‧‧光學模組封裝結構
20‧‧‧基板
22‧‧‧光發射區
24‧‧‧光接收區
30‧‧‧光發射晶片
40‧‧‧光接收晶片
50‧‧‧封裝膠體
52‧‧‧第一透鏡部
54‧‧‧第二透鏡部
60‧‧‧封蓋
62‧‧‧光發射孔
64‧‧‧光接收孔

Claims (10)

  1. 一種光學模組的封裝方法，該方法包含有下列步驟：(a)於基板上定義出一光發射區及一光接收區；(b)將光發射晶片與光接收晶片電性連接於基板上；(c)形成一可透光之封裝膠體於該光發射晶片與該光接收晶片；以及(d)蓋封一不透光之封蓋於該封裝膠體及該基板之上。
  2. 如申請專利範圍第1項所述之光學模組的封裝方法，其中該電性連接之方法係為打線製程及上片製程。
  3. 如申請專利範圍第1項所述之光學模組的封裝方法，其中該封裝膠體係以模壓方式所形成。
  4. 如申請專利範圍第1項所述之光學模組的封裝方法，其中該封蓋係以蓋封方式所形成。
  5. 如申請專利範圍第1項所述之光學模組的封裝方法，其中更包含有一步驟(e)，係將該步驟(a)至步驟(d)所製成之該光學模組進行切割或衝切。
  6. 一種光學模組的封裝結構，包含有：一基板，定義出一光發射區及一光接收區；一光發射晶片，設於該基板之光發射區；一光接收晶片，設於該基板之光接收區；二封裝膠體，係為透光之材質，且分別包覆於該光發射晶片及該光接收晶片，各該封裝膠體分別於該光發射晶片及該光接收晶片之上方形成一呈半球狀之第一、第二透鏡部；以及 一封蓋，以蓋封方式固設於該基板與各該封裝膠體之上，具有一光發射孔及一光接收孔，該光發射孔及該光接孔分別位於該光發射晶片及該光接收晶片之上方，且該第一、第二透鏡部分別容置於該光發射孔及該光接收孔之中。
  7. 如申請專利範圍第6項所述之光學模組的封裝結構，其中各該封裝膠體之第一、第二透鏡部的屈率可為相同或不相同。
  8. 如申請專利範圍第6項所述之光學模組的封裝結構，其中各該封裝膠體為樹脂。
  9. 如申請專利範圍第6項所述之光學模組的封裝結構，其中該封蓋為一體成型，且為不透光之樹脂。
  10. 如申請專利範圍第6項所述之光學模組的封裝結構，其中該基板為有機材質之雙馬來醯亞胺三嗪(Bismaleimide Triazine)基板等非陶瓷基板。
TW102126691A 2013-07-25 2013-07-25 光學模組的封裝結構 TW201505134A (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW102126691A TW201505134A (zh) 2013-07-25 2013-07-25 光學模組的封裝結構
US14/072,187 US20150028358A1 (en) 2013-07-25 2013-11-05 Package structure of an optical module
JP2013231221A JP2015026802A (ja) 2013-07-25 2013-11-07 光学モジュール、および、その製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW102126691A TW201505134A (zh) 2013-07-25 2013-07-25 光學模組的封裝結構

Publications (2)

Publication Number Publication Date
TW201505134A true TW201505134A (zh) 2015-02-01
TWI509755B TWI509755B (zh) 2015-11-21

Family

ID=52389749

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102126691A TW201505134A (zh) 2013-07-25 2013-07-25 光學模組的封裝結構

Country Status (3)

Country Link
US (1) US20150028358A1 (zh)
JP (1) JP2015026802A (zh)
TW (1) TW201505134A (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105891136A (zh) * 2015-02-13 2016-08-24 台医光电科技股份有限公司 多点测量配件、多点测量装置与多点测量系统
CN108269793A (zh) * 2016-12-30 2018-07-10 菱生精密工业股份有限公司 光学模块的封装结构
US10508935B2 (en) 2015-10-15 2019-12-17 Advanced Semiconductor Engineering, Inc. Optical module and manufacturing process thereof

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201505131A (zh) * 2013-07-25 2015-02-01 Lingsen Precision Ind Ltd 光學模組的封裝結構
KR101832152B1 (ko) * 2015-06-02 2018-02-26 (주)파트론 광학 센서 패키지
US10170658B2 (en) * 2015-11-13 2019-01-01 Advanced Semiconductor Engineering, Inc. Semiconductor package structures and method of manufacturing the same
US20180149776A1 (en) * 2016-11-28 2018-05-31 Microsoft Technology Licensing, Llc Optical cross talk mitigation for light emitter
CN107871789A (zh) * 2017-12-13 2018-04-03 刘向宁 收发一体式光电转换器

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0372683A (ja) * 1989-08-11 1991-03-27 Toshiba Corp 反射型センサ
JP3172667B2 (ja) * 1995-12-04 2001-06-04 株式会社東海理化電機製作所 シーソ型スイッチ
JP3172668B2 (ja) * 1995-12-28 2001-06-04 株式会社竹内製作所 掘削作業装置およびパワーショベル
JPH11289105A (ja) * 1998-04-03 1999-10-19 Citizen Electronics Co Ltd フォトリフレクタとその製造方法
TW428490U (en) * 2000-03-20 2001-04-01 Linchen Ming Yu Thread-controlled walk toy
US20040201080A1 (en) * 2003-04-08 2004-10-14 Suresh Basoor Leadless leadframe electronic package and IR transceiver incorporating same
KR101148332B1 (ko) * 2003-04-30 2012-05-25 크리, 인코포레이티드 콤팩트 광학 특성을 지닌 높은 전력의 발광 소자 패키지
JP2005159277A (ja) * 2003-10-30 2005-06-16 Kyocera Corp 光半導体素子収納用パッケージおよび光半導体装置
JP4349978B2 (ja) * 2004-06-17 2009-10-21 シチズン電子株式会社 光半導体パッケージ及びその製造方法
JP2006038572A (ja) * 2004-07-26 2006-02-09 Sharp Corp 反射型エンコーダおよびこの反射型エンコーダを用いた電子機器
EP1861876A1 (en) * 2005-03-24 2007-12-05 Tir Systems Ltd. Solid-state lighting device package
JP2007200730A (ja) * 2006-01-27 2007-08-09 Casio Comput Co Ltd 光源ユニット、光源装置及びプロジェクタ
JP2007234881A (ja) * 2006-03-01 2007-09-13 Oki Electric Ind Co Ltd 半導体チップを積層した半導体装置及びその製造方法
JP5069996B2 (ja) * 2007-10-03 2012-11-07 シチズン電子株式会社 フォトリフレクタの製造方法
US20090140266A1 (en) * 2007-11-30 2009-06-04 Yong Liu Package including oriented devices
JP2010034189A (ja) * 2008-07-28 2010-02-12 Sharp Corp 光学式近接センサ及びその製造方法並びに当該光学式近接センサを搭載した電子機器
TWM363080U (en) * 2009-01-21 2009-08-11 Pixart Imaging Inc Packaging structure
WO2010084746A1 (ja) * 2009-01-23 2010-07-29 日亜化学工業株式会社 半導体装置及びその製造方法
KR20120100438A (ko) * 2011-03-04 2012-09-12 삼성디스플레이 주식회사 전면발광형 유기발광표시장치 및 그 제조방법
DE102011105374B4 (de) * 2011-06-22 2021-12-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Halbleiterbauelementen im Verbund
US8677605B2 (en) * 2011-07-22 2014-03-25 Lite-On Singapore Pte. Ltd. Method for manufacturing sensor unit
TWM428490U (en) * 2011-09-27 2012-05-01 Lingsen Precision Ind Ltd Optical module packaging unit
JP2013098381A (ja) * 2011-11-01 2013-05-20 Renesas Electronics Corp 光結合素子
US20140021491A1 (en) * 2012-07-18 2014-01-23 Carsem (M) Sdn. Bhd. Multi-compound molding
TWI536610B (zh) * 2012-12-24 2016-06-01 鴻海精密工業股份有限公司 發光二極體模組之製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105891136A (zh) * 2015-02-13 2016-08-24 台医光电科技股份有限公司 多点测量配件、多点测量装置与多点测量系统
CN105895595A (zh) * 2015-02-13 2016-08-24 台医光电科技股份有限公司 光学传感模组、光学传感配件与光学传感装置
CN105895595B (zh) * 2015-02-13 2019-01-04 台医光电科技股份有限公司 光学传感模组、光学传感配件与光学传感装置
US10508935B2 (en) 2015-10-15 2019-12-17 Advanced Semiconductor Engineering, Inc. Optical module and manufacturing process thereof
TWI710784B (zh) * 2015-10-15 2020-11-21 日月光半導體製造股份有限公司 光學模組及其製造方法
CN108269793A (zh) * 2016-12-30 2018-07-10 菱生精密工业股份有限公司 光学模块的封装结构

Also Published As

Publication number Publication date
TWI509755B (zh) 2015-11-21
US20150028358A1 (en) 2015-01-29
JP2015026802A (ja) 2015-02-05

Similar Documents

Publication Publication Date Title
TWI527166B (zh) The package structure of the optical module
TW201505134A (zh) 光學模組的封裝結構
TWI556422B (zh) 影像模組封裝及其製作方法
JP3172667U (ja) 光学モジュール
TWI619208B (zh) 具聚光結構之光學模組的封裝方法
TWI521671B (zh) The package structure of the optical module
TW201505135A (zh) 光學模組的封裝結構
US9478693B2 (en) Optical module package and its packaging method
TW201505132A (zh) 光學模組的封裝結構
TWI616670B (zh) 遠距離感測器的封裝結構
JPH0918058A (ja) 発光半導体装置
TWI631687B (zh) Package structure of remote sensor and packaging method thereof
TW201505131A (zh) 光學模組的封裝結構
CN204391150U (zh) 改良的发光二极管封装结构
JP6104624B2 (ja) 半導体デバイスの製造方法および半導体デバイス
TW201824524A (zh) 光學模組的封裝結構
TWM497854U (zh) 光學模組的封裝結構
TWM539704U (zh) 光學模組的封裝結構
TWI644456B (zh) Remote sensor packaging method
TWI473287B (zh) Optical sensing device and manufacturing method thereof
TWI643361B (zh) Remote sensor packaging method
WO2014054084A1 (ja) 半導体デバイス、これを備えた近接センサーおよび半導体デバイスの製造方法
TWM486862U (zh) 光電元件之封裝體