JP2015026802A - 光学モジュール、および、その製造方法 - Google Patents
光学モジュール、および、その製造方法 Download PDFInfo
- Publication number
- JP2015026802A JP2015026802A JP2013231221A JP2013231221A JP2015026802A JP 2015026802 A JP2015026802 A JP 2015026802A JP 2013231221 A JP2013231221 A JP 2013231221A JP 2013231221 A JP2013231221 A JP 2013231221A JP 2015026802 A JP2015026802 A JP 2015026802A
- Authority
- JP
- Japan
- Prior art keywords
- light
- substrate
- chip
- light emitting
- optical module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 238000007789 sealing Methods 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 5
- 229920005989 resin Polymers 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 9
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 claims description 3
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 229920003192 poly(bis maleimide) Polymers 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 3
- 230000001965 increasing effect Effects 0.000 abstract description 3
- 239000003822 epoxy resin Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/04—Systems determining the presence of a target
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4811—Constructional features, e.g. arrangements of optical elements common to transmitter and receiver
- G01S7/4813—Housing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Networks & Wireless Communication (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Led Device Packages (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Manufacturing & Machinery (AREA)
Abstract
Description
(A)基板において、発光ゾーン及び受光ゾーンを定義する。
20・・・基板、
22・・・発光ゾーン、
24・・・受光ゾーン、
30・・・発光チップ、
40・・・受光チップ、
50・・・パッケージ部材、
52・・・第1のレンズ部、
54・・・第2のレンズ部、
60・・・封止用蓋体、
62・・・発光穴、
64・・・受光穴。
Claims (10)
- (A)基板において、発光ゾーン、及び、受光ゾーンを定義するステップと、
(B)発光チップと受光チップを前記基板に電気的に接続するステップと、
(C)前記発光チップおよび前記受光チップの前記基板とは反対側に透光可能なパッケージ部材を形成するステップと、
(D)前記パッケージ部材の前記基板とは反対側に透光不能な封止用蓋体を覆うステップと、を含むことを特徴とする光学モジュールの製造方法。 - 前記発光チップと前記受光チップを前記基板に電気的に接続する方法は、ワイヤボンディングプロセス、及び、ダイアタッチプロセスであることを特徴とする請求項1に記載の光学モジュールの製造方法。
- 前記パッケージ部材が、モールド方式で形成されていることを特徴とする請求項1に記載の光学モジュールの製造方法。
- 前記封止用蓋体は、閉蓋方式で形成されていることを特徴とする請求項1に記載の光学モジュールの製造方法。
- 前記ステップ(A)〜前記ステップ(D)により製造された前記光学モジュールをカット、又は、ダイカットするステップ(E)を更に含むことを特徴とする請求項1に記載の光学モジュールの製造方法。
- 発光ゾーン、及び、受光ゾーンが定義されている基板と、
前記基板の前記発光ゾーンに設けられた発光チップと、
前記基板の前記受光ゾーンに設けられた受光チップと、
光透過性材質であり、且つ、前記発光チップ及び前記受光チップを覆い、前記発光チップに対応する第1のレンズ部、及び、前記受光チップに対応する第2のレンズ部が形成されているパッケージ部材と、
前記パッケージ部材の前記基板とは反対側に固設され、前記発光チップ及び前記受光チップに対応する位置に形成されている発光穴および受光穴とを有し、前記発光穴が前記第1のレンズ部を収容し、前記受光穴が前記第2のレンズを収容する封止用蓋体と、を備えることを特徴とする光学モジュール。 - 前記パッケージ部材の前記第1のレンズ部および前記第2のレンズ部は、同一の屈折率又は異なる屈折率を有することを特徴とする請求項6に記載の光学モジュール。
- 前記パッケージ部材は、材質が樹脂であることを特徴とする請求項6に記載の光学モジュール。
- 前記封止用蓋体は、一体に成形されており、材質が遮光性の樹脂であることを特徴とする請求項6に記載の光学モジュール。
- 前記基板は、有機材質のビスマレイミドトリアジン基板を含む非セラミック基板であることを特徴とする請求項6に記載の光学モジュール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW102126691 | 2013-07-25 | ||
TW102126691A TW201505134A (zh) | 2013-07-25 | 2013-07-25 | 光學模組的封裝結構 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2015026802A true JP2015026802A (ja) | 2015-02-05 |
Family
ID=52389749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013231221A Pending JP2015026802A (ja) | 2013-07-25 | 2013-11-07 | 光学モジュール、および、その製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20150028358A1 (ja) |
JP (1) | JP2015026802A (ja) |
TW (1) | TW201505134A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101832152B1 (ko) * | 2015-06-02 | 2018-02-26 | (주)파트론 | 광학 센서 패키지 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201505131A (zh) * | 2013-07-25 | 2015-02-01 | Lingsen Precision Ind Ltd | 光學模組的封裝結構 |
US9752925B2 (en) * | 2015-02-13 | 2017-09-05 | Taiwan Biophotonic Corporation | Optical sensor |
US10508935B2 (en) * | 2015-10-15 | 2019-12-17 | Advanced Semiconductor Engineering, Inc. | Optical module and manufacturing process thereof |
US10170658B2 (en) * | 2015-11-13 | 2019-01-01 | Advanced Semiconductor Engineering, Inc. | Semiconductor package structures and method of manufacturing the same |
US20180149776A1 (en) * | 2016-11-28 | 2018-05-31 | Microsoft Technology Licensing, Llc | Optical cross talk mitigation for light emitter |
CN108269793A (zh) * | 2016-12-30 | 2018-07-10 | 菱生精密工业股份有限公司 | 光学模块的封装结构 |
CN107871789A (zh) * | 2017-12-13 | 2018-04-03 | 刘向宁 | 收发一体式光电转换器 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11289105A (ja) * | 1998-04-03 | 1999-10-19 | Citizen Electronics Co Ltd | フォトリフレクタとその製造方法 |
JP3172667B2 (ja) * | 1995-12-04 | 2001-06-04 | 株式会社東海理化電機製作所 | シーソ型スイッチ |
JP3172668B2 (ja) * | 1995-12-28 | 2001-06-04 | 株式会社竹内製作所 | 掘削作業装置およびパワーショベル |
JP2006005141A (ja) * | 2004-06-17 | 2006-01-05 | Citizen Electronics Co Ltd | 光半導体パッケージ及びその製造方法 |
JP2009088435A (ja) * | 2007-10-03 | 2009-04-23 | Citizen Electronics Co Ltd | フォトリフレクタ及びその製造方法 |
JP2010034189A (ja) * | 2008-07-28 | 2010-02-12 | Sharp Corp | 光学式近接センサ及びその製造方法並びに当該光学式近接センサを搭載した電子機器 |
US20130019459A1 (en) * | 2011-07-22 | 2013-01-24 | Lite-On Singapore Pte. Ltd. | Method for manufacturing sensor unit |
JP2013098381A (ja) * | 2011-11-01 | 2013-05-20 | Renesas Electronics Corp | 光結合素子 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0372683A (ja) * | 1989-08-11 | 1991-03-27 | Toshiba Corp | 反射型センサ |
TW428490U (en) * | 2000-03-20 | 2001-04-01 | Linchen Ming Yu | Thread-controlled walk toy |
US20040201080A1 (en) * | 2003-04-08 | 2004-10-14 | Suresh Basoor | Leadless leadframe electronic package and IR transceiver incorporating same |
KR101148332B1 (ko) * | 2003-04-30 | 2012-05-25 | 크리, 인코포레이티드 | 콤팩트 광학 특성을 지닌 높은 전력의 발광 소자 패키지 |
JP2005159277A (ja) * | 2003-10-30 | 2005-06-16 | Kyocera Corp | 光半導体素子収納用パッケージおよび光半導体装置 |
JP2006038572A (ja) * | 2004-07-26 | 2006-02-09 | Sharp Corp | 反射型エンコーダおよびこの反射型エンコーダを用いた電子機器 |
US20080296589A1 (en) * | 2005-03-24 | 2008-12-04 | Ingo Speier | Solid-State Lighting Device Package |
JP2007200730A (ja) * | 2006-01-27 | 2007-08-09 | Casio Comput Co Ltd | 光源ユニット、光源装置及びプロジェクタ |
JP2007234881A (ja) * | 2006-03-01 | 2007-09-13 | Oki Electric Ind Co Ltd | 半導体チップを積層した半導体装置及びその製造方法 |
US20090140266A1 (en) * | 2007-11-30 | 2009-06-04 | Yong Liu | Package including oriented devices |
TWM363080U (en) * | 2009-01-21 | 2009-08-11 | Pixart Imaging Inc | Packaging structure |
CN102292835B (zh) * | 2009-01-23 | 2015-03-25 | 日亚化学工业株式会社 | 半导体装置及其制造方法 |
KR20120100438A (ko) * | 2011-03-04 | 2012-09-12 | 삼성디스플레이 주식회사 | 전면발광형 유기발광표시장치 및 그 제조방법 |
DE102011105374B4 (de) * | 2011-06-22 | 2021-12-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Halbleiterbauelementen im Verbund |
TWM428490U (en) * | 2011-09-27 | 2012-05-01 | Lingsen Precision Ind Ltd | Optical module packaging unit |
US20140021491A1 (en) * | 2012-07-18 | 2014-01-23 | Carsem (M) Sdn. Bhd. | Multi-compound molding |
TWI536610B (zh) * | 2012-12-24 | 2016-06-01 | 鴻海精密工業股份有限公司 | 發光二極體模組之製造方法 |
-
2013
- 2013-07-25 TW TW102126691A patent/TW201505134A/zh unknown
- 2013-11-05 US US14/072,187 patent/US20150028358A1/en not_active Abandoned
- 2013-11-07 JP JP2013231221A patent/JP2015026802A/ja active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3172667B2 (ja) * | 1995-12-04 | 2001-06-04 | 株式会社東海理化電機製作所 | シーソ型スイッチ |
JP3172668B2 (ja) * | 1995-12-28 | 2001-06-04 | 株式会社竹内製作所 | 掘削作業装置およびパワーショベル |
JPH11289105A (ja) * | 1998-04-03 | 1999-10-19 | Citizen Electronics Co Ltd | フォトリフレクタとその製造方法 |
JP2006005141A (ja) * | 2004-06-17 | 2006-01-05 | Citizen Electronics Co Ltd | 光半導体パッケージ及びその製造方法 |
JP2009088435A (ja) * | 2007-10-03 | 2009-04-23 | Citizen Electronics Co Ltd | フォトリフレクタ及びその製造方法 |
JP2010034189A (ja) * | 2008-07-28 | 2010-02-12 | Sharp Corp | 光学式近接センサ及びその製造方法並びに当該光学式近接センサを搭載した電子機器 |
US20130019459A1 (en) * | 2011-07-22 | 2013-01-24 | Lite-On Singapore Pte. Ltd. | Method for manufacturing sensor unit |
JP2013098381A (ja) * | 2011-11-01 | 2013-05-20 | Renesas Electronics Corp | 光結合素子 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101832152B1 (ko) * | 2015-06-02 | 2018-02-26 | (주)파트론 | 광학 센서 패키지 |
Also Published As
Publication number | Publication date |
---|---|
TW201505134A (zh) | 2015-02-01 |
US20150028358A1 (en) | 2015-01-29 |
TWI509755B (ja) | 2015-11-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6062349B2 (ja) | 光学モジュール、およびその製造方法 | |
JP2015026802A (ja) | 光学モジュール、および、その製造方法 | |
TWI556422B (zh) | 影像模組封裝及其製作方法 | |
JP2015026798A (ja) | 光学モジュールのパッケージ、及びその製造方法 | |
KR101176819B1 (ko) | 조도?근접센서 패키지 및 그 제조 방법 | |
JP2015026803A (ja) | 光学モジュール、及びその製造方法 | |
US10690538B2 (en) | Optical sensor module and a wearable device including the same | |
TWI619208B (zh) | 具聚光結構之光學模組的封裝方法 | |
JP2014039029A (ja) | 光学素子パッケージモジュール | |
JP2015026800A (ja) | 光学モジュールのパッケージ、及びその製造方法 | |
JP2015026799A (ja) | 光学モジュール、及びその製造方法 | |
JP2013187357A (ja) | 反射光センサ | |
US10004140B2 (en) | Three-dimensional circuit substrate and sensor module using three-dimensional circuit substrate | |
KR102068161B1 (ko) | 광학 센서 패키지 및 그 제조 방법 | |
TW201824524A (zh) | 光學模組的封裝結構 | |
TWM539704U (zh) | 光學模組的封裝結構 | |
TWI473287B (zh) | Optical sensing device and manufacturing method thereof | |
JP3140970U (ja) | 光感知モジュールのパッケージング | |
JP2008226969A (ja) | 光通信モジュール | |
CN201021988Y (zh) | 移动侦测感测模块 | |
KR20110057940A (ko) | Pcb 기반 광 마우스 센서용 듀얼 인-라인 패키지 제조방법 | |
TWM462444U (zh) | 具有感應裝置的載板封裝結構 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141118 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150217 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150402 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20150630 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150803 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160205 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160502 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160701 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160727 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20170110 |