JP2015026803A - 光学モジュール、及びその製造方法 - Google Patents
光学モジュール、及びその製造方法 Download PDFInfo
- Publication number
- JP2015026803A JP2015026803A JP2013235049A JP2013235049A JP2015026803A JP 2015026803 A JP2015026803 A JP 2015026803A JP 2013235049 A JP2013235049 A JP 2013235049A JP 2013235049 A JP2013235049 A JP 2013235049A JP 2015026803 A JP2015026803 A JP 2015026803A
- Authority
- JP
- Japan
- Prior art keywords
- light
- substrate
- chip
- light emitting
- optical module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000007789 sealing Methods 0.000 claims abstract description 22
- 229920005989 resin Polymers 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 6
- 230000004308 accommodation Effects 0.000 claims description 5
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 claims description 3
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 229920003192 poly(bis maleimide) Polymers 0.000 claims description 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 210000005069 ears Anatomy 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
Abstract
Description
(a)基板に、発光ゾーン、及び、受光ゾーンを定義する。
(b)電子ユニットを基板に電気的に接続する。
(c)受光チップを基板の受光ゾーンに電気的に接続し、発光チップを発光ゾーンに電気的に接続する。
(d)遮光可能な封止用蓋体を基板に設ける。
(e)発光チップ、受光チップ、および、電子ユニットに、透光可能なパッケージ部材を形成する。
ただし、以下に述べるものは、本発明の技術内容及び特徴を明らかにするために提供する一実施形態であって、本発明の属する技術の分野における通常の知識を有する者が本発明の技術内容及び特徴を理解した後、本発明の精神を逸脱しない限りにおいて、行う種々の修正、変更又は構成要素の減少をなし得ることは本発明の技術的範囲内に含まれる。
まず、図1、図2を参照しながら説明する。本発明の一実施形態として提供する光学モジュール10は、一般的なパッケージアレイ(Array)からカットして取ったモジュールで、基板20と受光チップ30と発光チップ40と電子ユニット50と2つのパッケージ部材60と封止用蓋体70とを含む。
20・・・基板、
22・・・受光ゾーン、
24・・・発光ゾーン、
30・・・受光チップ、
40・・・発光チップ、
50・・・電子ユニット、
60・・・パッケージ部材、
70・・・封止用蓋体、
72・・・受光穴、
74・・・発光穴、
76・・・第1の収容空間、
78・・・第2の収容空間。
Claims (10)
- 発光ゾーン、及び、受光ゾーンが定義されている基板と、
前記基板の前記受光ゾーンに設けられている受光チップと、
前記基板の前記発光ゾーンに設けられている発光チップと、
前記基板に設けられ、且つ、前記発光チップに電気的に接続されている電子ユニットと、
前記受光チップ、前記発光チップ、及び、前記電子ユニットを覆うパッケージ部材と、
前記発光チップ及び前記受光チップを覆うよう前記基板に設けられており、前記発光チップ及び前記受光チップに対応する位置に発光穴と受光穴とが形成されている封止用蓋体と、を備えることを特徴とする光学モジュール。 - 前記パッケージ部材は透光性樹脂により形成されており、
前記封止用蓋体は遮光性樹脂により形成されていることを特徴とする請求項1に記載の光学モジュール。 - 前記封止用蓋体は、前記受光穴と連通している第1の収容空間、及び、前記発光穴と連通している第2の収容空間を有することを特徴とする請求項1に記載の光学モジュール。
- 前記受光チップは前記第1の収容空間内に収容されており、
前記発光チップは前記第2の収容空間内に収容されていることを特徴とする請求項3に記載の光学モジュール。 - 前記基板は、有機材質のビスマレイミドトリアジン基板を含む非セラミック基板であることを特徴とする請求項1に記載の光学モジュール。
- (a)基板に、発光ゾーン、及び、受光ゾーンを定義するステップと、
(b)電子ユニットを前記基板に電気的に接続するステップと、
(c)受光チップを前記基板の前記受光ゾーンに電気的に接続し、前記発光チップを前記発光ゾーンに電気的に接続するステップと、
(d)遮光可能な封止用蓋体を前記基板に設けるステップと、
(e)前記発光チップ、前記受光チップ、および、前記電子ユニットに、透光可能なパッケージ部材を形成するステップと、を含むことを特徴とする光学モジュールの製造方法。 - 前記電子ユニットと前記基板の設置方法は、表面実装技術を利用することを特徴とする請求項6に記載の光学モジュールの製造方法。
- 前記電子ユニットと前記発光チップとの電気的な接続関係は、直列接続、或いは、並列接続であることを特徴とする請求項6に記載の光学モジュールの製造方法。
- 前記チップと前記基板との電気的接続方法は、ワイヤボンディングプロセス、及び、ダイアタッチプロセスであることを特徴とする請求項6に記載の光学モジュールの製造方法。
- 前記ステップ(a)〜前記ステップ(e)で製造した光学モジュールをカット、又は、ダイカットするステップ(f)を更に含むことを特徴とする請求項6に記載の光学モジュールの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW102126694A TWI521671B (zh) | 2013-07-25 | 2013-07-25 | The package structure of the optical module |
TW102126694 | 2013-07-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2015026803A true JP2015026803A (ja) | 2015-02-05 |
Family
ID=52389750
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013235049A Pending JP2015026803A (ja) | 2013-07-25 | 2013-11-13 | 光学モジュール、及びその製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9705025B2 (ja) |
JP (1) | JP2015026803A (ja) |
TW (1) | TWI521671B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101898055B1 (ko) * | 2017-08-11 | 2018-09-12 | (주)파트론 | 광학센서 패키지 및 그 제조 방법 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10170658B2 (en) * | 2015-11-13 | 2019-01-01 | Advanced Semiconductor Engineering, Inc. | Semiconductor package structures and method of manufacturing the same |
US11069667B2 (en) * | 2016-03-31 | 2021-07-20 | Stmicroelectronics Pte Ltd | Wafer level proximity sensor |
US9911890B2 (en) * | 2016-06-30 | 2018-03-06 | Stmicroelectronics Pte Ltd | Optical sensor package including a cavity formed in an image sensor die |
FR3080219B1 (fr) * | 2018-04-13 | 2021-03-05 | St Microelectronics Grenoble 2 | Dispositif electronique comprenant des puces electroniques |
US10930802B2 (en) * | 2018-05-03 | 2021-02-23 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and method of manufacturing the same |
SG10201908828WA (en) | 2019-09-23 | 2021-04-29 | Apple Inc | Embedded Packaging Concepts for Integration of ASICs and Optical Components |
US20230213715A1 (en) * | 2022-01-03 | 2023-07-06 | Apple Inc. | Technologies for Increased Volumetric and Functional Efficiencies of Optical Packages |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006005141A (ja) * | 2004-06-17 | 2006-01-05 | Citizen Electronics Co Ltd | 光半導体パッケージ及びその製造方法 |
JP2009088435A (ja) * | 2007-10-03 | 2009-04-23 | Citizen Electronics Co Ltd | フォトリフレクタ及びその製造方法 |
JP2010034189A (ja) * | 2008-07-28 | 2010-02-12 | Sharp Corp | 光学式近接センサ及びその製造方法並びに当該光学式近接センサを搭載した電子機器 |
JP2011007622A (ja) * | 2009-06-25 | 2011-01-13 | Sharp Corp | センサ装置、携帯電話およびデジタルカメラ |
JP2011181626A (ja) * | 2010-02-26 | 2011-09-15 | Sharp Corp | ヒューズ制御回路、ヒューズ制御システム、照度センサ、近接センサ、携帯電話、デジタルスチルカメラ、および電源回路 |
JP3172667U (ja) * | 2011-09-27 | 2012-01-05 | 菱生精密工業股▲分▼有限公司 | 光学モジュール |
JP3172668U (ja) * | 2011-09-27 | 2012-01-05 | 菱生精密工業股▲分▼有限公司 | 光学モジュール |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006023149A2 (en) * | 2004-07-08 | 2006-03-02 | Color Kinetics Incorporated | Led package methods and systems |
US20080296589A1 (en) * | 2005-03-24 | 2008-12-04 | Ingo Speier | Solid-State Lighting Device Package |
DE102005046450A1 (de) * | 2005-09-28 | 2007-04-05 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip, Verfahren zu dessen Herstellung und optoelektronisches Bauteil |
JP2007234881A (ja) * | 2006-03-01 | 2007-09-13 | Oki Electric Ind Co Ltd | 半導体チップを積層した半導体装置及びその製造方法 |
US20090140266A1 (en) * | 2007-11-30 | 2009-06-04 | Yong Liu | Package including oriented devices |
DE102008025159A1 (de) * | 2008-05-26 | 2009-12-10 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement, Reflexlichtschranke und Verfahren zur Herstellung eines Gehäuses |
TWM363080U (en) * | 2009-01-21 | 2009-08-11 | Pixart Imaging Inc | Packaging structure |
CN102292835B (zh) * | 2009-01-23 | 2015-03-25 | 日亚化学工业株式会社 | 半导体装置及其制造方法 |
TW201117408A (en) * | 2009-11-12 | 2011-05-16 | Everlight Electronics Co Ltd | Small type photo-interrupter and fabrication method thereof |
JP5468053B2 (ja) * | 2011-11-28 | 2014-04-09 | シャープ株式会社 | 光学式測距装置およびそれを搭載した電子機器 |
-
2013
- 2013-07-25 TW TW102126694A patent/TWI521671B/zh active
- 2013-11-05 US US14/072,267 patent/US9705025B2/en active Active
- 2013-11-13 JP JP2013235049A patent/JP2015026803A/ja active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006005141A (ja) * | 2004-06-17 | 2006-01-05 | Citizen Electronics Co Ltd | 光半導体パッケージ及びその製造方法 |
JP2009088435A (ja) * | 2007-10-03 | 2009-04-23 | Citizen Electronics Co Ltd | フォトリフレクタ及びその製造方法 |
JP2010034189A (ja) * | 2008-07-28 | 2010-02-12 | Sharp Corp | 光学式近接センサ及びその製造方法並びに当該光学式近接センサを搭載した電子機器 |
JP2011007622A (ja) * | 2009-06-25 | 2011-01-13 | Sharp Corp | センサ装置、携帯電話およびデジタルカメラ |
JP2011181626A (ja) * | 2010-02-26 | 2011-09-15 | Sharp Corp | ヒューズ制御回路、ヒューズ制御システム、照度センサ、近接センサ、携帯電話、デジタルスチルカメラ、および電源回路 |
JP3172667U (ja) * | 2011-09-27 | 2012-01-05 | 菱生精密工業股▲分▼有限公司 | 光学モジュール |
JP3172668U (ja) * | 2011-09-27 | 2012-01-05 | 菱生精密工業股▲分▼有限公司 | 光学モジュール |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101898055B1 (ko) * | 2017-08-11 | 2018-09-12 | (주)파트론 | 광학센서 패키지 및 그 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
US20150028359A1 (en) | 2015-01-29 |
TWI521671B (zh) | 2016-02-11 |
TW201505156A (zh) | 2015-02-01 |
US9705025B2 (en) | 2017-07-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2015026803A (ja) | 光学モジュール、及びその製造方法 | |
US9372264B1 (en) | Proximity sensor device | |
JP3172667U (ja) | 光学モジュール | |
JP6062349B2 (ja) | 光学モジュール、およびその製造方法 | |
KR101176819B1 (ko) | 조도?근접센서 패키지 및 그 제조 방법 | |
JP2015026798A (ja) | 光学モジュールのパッケージ、及びその製造方法 | |
US9449955B2 (en) | Optical module integrated package | |
US20130075764A1 (en) | Optical module package structure | |
TW201619576A (zh) | 光學模組、其製造方法及電子裝置 | |
CN107918459B (zh) | 电子装置 | |
JP2015026802A (ja) | 光学モジュール、および、その製造方法 | |
CN104332524A (zh) | 电子装置、光学模块及其制造方法 | |
JP4349978B2 (ja) | 光半導体パッケージ及びその製造方法 | |
JP2015026800A (ja) | 光学モジュールのパッケージ、及びその製造方法 | |
CN108012004B (zh) | 电子装置 | |
JP2014039029A (ja) | 光学素子パッケージモジュール | |
TWI685641B (zh) | 光學感測系統、光學感測組件及其製造方法 | |
JP2015198243A (ja) | 光学モジュール及びそのパッケージング方法 | |
US10103286B2 (en) | Packaging method of long-distance sensor | |
US10004140B2 (en) | Three-dimensional circuit substrate and sensor module using three-dimensional circuit substrate | |
CN108666281B (zh) | 光学器件封装结构及移动终端 | |
JP2015026799A (ja) | 光学モジュール、及びその製造方法 | |
KR101336781B1 (ko) | 광학 근조도 센서 및 그 제조방법 | |
CN108063150B (zh) | 电子装置 | |
CN108023985B (zh) | 电子装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141118 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150213 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20150402 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150730 |
|
A911 | Transfer of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20150806 |
|
A912 | Removal of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20151204 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160613 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20160714 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160809 |