JP3172668U - 光学モジュール - Google Patents
光学モジュール Download PDFInfo
- Publication number
- JP3172668U JP3172668U JP2011006059U JP2011006059U JP3172668U JP 3172668 U JP3172668 U JP 3172668U JP 2011006059 U JP2011006059 U JP 2011006059U JP 2011006059 U JP2011006059 U JP 2011006059U JP 3172668 U JP3172668 U JP 3172668U
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- 230000003287 optical effect Effects 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 3
- 239000000084 colloidal system Substances 0.000 claims description 7
- 238000005192 partition Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000010409 thin film Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4811—Constructional features, e.g. arrangements of optical elements common to transmitter and receiver
- G01S7/4813—Housing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Computer Networks & Wireless Communication (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
【解決手段】 基板20は第一凹部22が形成される発光領域202および第二凹部24が形成される受光領域204を有する。第一凹部22の内壁面には金属薄膜でコーティングされた反射層26が形成されている。発光チップ30は基板20の第一凹部22の内部に設けられ、光線を射出する。受光チップ40は基板20の第二凹部204に設けられ、第2凹部24に入射する光線を受光する。発光チップ30が射出する光線は、反射層26によって反射され光学モジュール10の外部に放射されたのち、受光チップ40によって受光される。これにより、光学モジュール10の製造コストを低減するとともに、反射層26によって外部に放射される光線の強度が向上することにより、受光チップ40の受光強度を向上させることができる。
【選択図】 図2
Description
(一実施形態)
図1および図2に示すように、本考案の一実施形態による光学モジュール10は、基板20、発光チップ30、受光チップ40、二つのパッケージコロイド50、51およびキャップ60を備える。
発光チップ30が射出する光線は、発光孔62を通って外部に放出され、顔面などの物体の表面で反射する。反射した光線は受光孔64を通って受光チップ40に受光される。受光チップ40は、受光した光線の強度に応じた電気信号を外部に出力する。
(A)発光チップ30によって射出される光線は、反射層26によって反射され光学モジュール10の外部に放出される。放出された光線が顔面など凹凸が大きい物体の表面に当たる場合、光線は散乱し、光線強度は低くなるが、本実施形態による光学モジュール10では、反射層26によって効率的に光線が放射されているため、受光チップ40が受光する光線は従来に比べて増加する。これにより、受光チップ40の受光強度を向上させることができる。
20:基板、
202:発光領域、
204:受光領域、
22:第一凹部、
24:第二凹部、
26:反射層、
27:開口、
28:仕切部、
30:発光チップ、
40:受光チップ、
50:パッケージコロイド、
60:キャップ、
62:発光孔、
64:受光孔。
Claims (5)
- 第一凹部が形成される発光領域および第二凹部が形成される受光領域を有し、前記第一凹部の内壁面には反射層が形成される基板と、
前記第一凹部の内部に設けられる発光チップと、
前記第二凹部の内部に設けられる受光チップと、
前記第一凹部の内部および前記第二凹部の内部に充填されて前記発光チップおよび前記受光チップを覆う二つのパッケージコロイドと、
前記基板の前記第一凹部および前記第二凹部が形成される側に設けられ、前記第一凹部が形成される位置に対応して形成される発光孔および前記第二凹部が形成される位置に対応して形成される受光孔を有するキャップと、
を備えることを特徴とする光学モジュール。 - 前記第一凹部の内径は前記第一凹部の開口に向かって大きくなることを特徴とする請求項1に記載の光学モジュール。
- 前記第二凹部の内径は一定であることを特徴とする請求項1に記載の光学モジュール。
- 前記基板は、前記第一凹部と前記第二凹部との間に仕切部を有することを特徴とする請求項1に記載の光学モジュール。
- 前記反射層は、金属から形成されることを特徴とする請求項1に記載の光学モジュール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW100218094U TWM424605U (en) | 2011-09-27 | 2011-09-27 | The optical module package structure |
TW100218094 | 2011-09-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP3172668U true JP3172668U (ja) | 2012-01-05 |
Family
ID=46196171
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011006059U Expired - Lifetime JP3172668U (ja) | 2011-09-27 | 2011-10-17 | 光学モジュール |
Country Status (5)
Country | Link |
---|---|
US (1) | US20130075764A1 (ja) |
JP (1) | JP3172668U (ja) |
KR (1) | KR20130002138U (ja) |
CN (1) | CN202275832U (ja) |
TW (1) | TWM424605U (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014073905A1 (ko) * | 2012-11-09 | 2014-05-15 | (주)신오전자 | 광학 근조도 센서 및 그 제조방법 |
KR101457069B1 (ko) * | 2012-12-13 | 2014-10-31 | (주)신오전자 | 광학 근조도 센서 |
US20150028378A1 (en) * | 2013-07-25 | 2015-01-29 | Lingsen Precision Industries, Ltd. | Package structure of optical module |
JP2015026803A (ja) * | 2013-07-25 | 2015-02-05 | 菱生精密工業股▲分▼有限公司 | 光学モジュール、及びその製造方法 |
JP2015026804A (ja) * | 2013-07-25 | 2015-02-05 | 菱生精密工業股▲分▼有限公司 | 光学モジュール、およびその製造方法 |
JP2015026799A (ja) * | 2013-07-25 | 2015-02-05 | 菱生精密工業股▲分▼有限公司 | 光学モジュール、及びその製造方法 |
JP2015198243A (ja) * | 2014-03-31 | 2015-11-09 | 菱生精密工業股▲分▼有限公司 | 光学モジュール及びそのパッケージング方法 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130119282A1 (en) * | 2011-11-14 | 2013-05-16 | Stmicroelectronics Pte Ltd. | Wafer level packaging, optical detection sensor and method of forming same |
TWM448798U (zh) * | 2012-08-10 | 2013-03-11 | Meicer Semiconductor Inc | 光學元件封裝模組 |
US9322901B2 (en) * | 2013-02-20 | 2016-04-26 | Maxim Integrated Products, Inc. | Multichip wafer level package (WLP) optical device |
CN107589087A (zh) * | 2013-10-24 | 2018-01-16 | 日月光半导体制造股份有限公司 | 感测模块及其制造方法 |
TWI651840B (zh) * | 2013-12-27 | 2019-02-21 | 菱生精密工業股份有限公司 | 具濾光層之微型光學封裝結構及其製造方法 |
DE102014222874C5 (de) * | 2014-11-10 | 2019-10-24 | Ifm Electronic Gmbh | Optischer Näherungsschalter |
EP3059764B1 (en) * | 2015-02-18 | 2021-04-28 | Nokia Technologies Oy | Apparatus for emitting light and method of manufacturing the same |
US10672937B2 (en) * | 2015-09-02 | 2020-06-02 | Pixart Imaging Inc. | Optical sensor module and sensor chip thereof |
DE102016106135A1 (de) | 2016-04-04 | 2017-10-05 | Vishay Semiconductor Gmbh | Elektronische Einheit |
CN106241723A (zh) * | 2016-08-31 | 2016-12-21 | 歌尔股份有限公司 | 一种光学芯片的封装结构及其制造方法 |
WO2019047340A1 (zh) * | 2017-09-08 | 2019-03-14 | 北醒(北京)光子科技有限公司 | 一种光学测距装置 |
CN108364909B (zh) * | 2018-01-19 | 2021-01-26 | 西安中为光电科技有限公司 | 一种具有发射和接收光信号功能的芯片及其制作方法 |
US20220052128A1 (en) * | 2018-09-10 | 2022-02-17 | Sharp Kabushiki Kaisha | Display device |
FR3100380B1 (fr) * | 2019-09-03 | 2021-10-01 | St Microelectronics Grenoble 2 | Dispositif électronique comprenant des composants électroniques optiques et procédé de fabrication |
FR3100379B1 (fr) * | 2019-09-03 | 2021-09-24 | St Microelectronics Grenoble 2 | Dispositif électronique comprenant des composants électroniques optiques et procédé de fabrication |
CN115458611A (zh) * | 2021-12-17 | 2022-12-09 | 义明科技股份有限公司 | 下沉式封装结构 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5291038A (en) * | 1990-12-19 | 1994-03-01 | Sharp Kabushiki Kaisha | Reflective type photointerrupter |
US8053800B2 (en) * | 2008-11-04 | 2011-11-08 | Rohm Co., Ltd. | Reflection-type photointerrupter |
US20110024627A1 (en) * | 2009-07-31 | 2011-02-03 | Avago Technologies Ecbu (Singapore) Pte. Ltd. | Proximity Sensor with Ceramic Housing and Light Barrier |
TWM399313U (en) * | 2010-07-30 | 2011-03-01 | Sigurd Microelectronics Corp | Proximity sensor package structure |
US20120290255A1 (en) * | 2011-05-13 | 2012-11-15 | Intersil Americas Inc. | Clear layer isolation |
-
2011
- 2011-09-27 TW TW100218094U patent/TWM424605U/zh not_active IP Right Cessation
- 2011-09-29 CN CN2011203814573U patent/CN202275832U/zh not_active Expired - Lifetime
- 2011-10-17 JP JP2011006059U patent/JP3172668U/ja not_active Expired - Lifetime
- 2011-10-28 KR KR2020110009579U patent/KR20130002138U/ko not_active IP Right Cessation
- 2011-11-03 US US13/288,747 patent/US20130075764A1/en not_active Abandoned
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014073905A1 (ko) * | 2012-11-09 | 2014-05-15 | (주)신오전자 | 광학 근조도 센서 및 그 제조방법 |
KR101457069B1 (ko) * | 2012-12-13 | 2014-10-31 | (주)신오전자 | 광학 근조도 센서 |
US20150028378A1 (en) * | 2013-07-25 | 2015-01-29 | Lingsen Precision Industries, Ltd. | Package structure of optical module |
JP2015026800A (ja) * | 2013-07-25 | 2015-02-05 | 菱生精密工業股▲分▼有限公司 | 光学モジュールのパッケージ、及びその製造方法 |
JP2015026803A (ja) * | 2013-07-25 | 2015-02-05 | 菱生精密工業股▲分▼有限公司 | 光学モジュール、及びその製造方法 |
JP2015026804A (ja) * | 2013-07-25 | 2015-02-05 | 菱生精密工業股▲分▼有限公司 | 光学モジュール、およびその製造方法 |
JP2015026799A (ja) * | 2013-07-25 | 2015-02-05 | 菱生精密工業股▲分▼有限公司 | 光学モジュール、及びその製造方法 |
US9647178B2 (en) * | 2013-07-25 | 2017-05-09 | Lingsen Precision Industries, Ltd. | Package structure of optical module having printed shielding layer and its method for packaging |
JP2015198243A (ja) * | 2014-03-31 | 2015-11-09 | 菱生精密工業股▲分▼有限公司 | 光学モジュール及びそのパッケージング方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20130002138U (ko) | 2013-04-04 |
CN202275832U (zh) | 2012-06-13 |
TWM424605U (en) | 2012-03-11 |
US20130075764A1 (en) | 2013-03-28 |
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