CN202275832U - 光学模块封装结构 - Google Patents

光学模块封装结构 Download PDF

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CN202275832U
CN202275832U CN2011203814573U CN201120381457U CN202275832U CN 202275832 U CN202275832 U CN 202275832U CN 2011203814573 U CN2011203814573 U CN 2011203814573U CN 201120381457 U CN201120381457 U CN 201120381457U CN 202275832 U CN202275832 U CN 202275832U
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游兆伟
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Lingsen Precision Industries Ltd
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    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4811—Constructional features, e.g. arrangements of optical elements common to transmitter and receiver
    • G01S7/4813—Housing arrangements
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating

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Abstract

本实用新型有关于一种光学模块封装结构，主要将一光发射芯片与一光接收芯片分别设置于基板的第一凹穴与第二凹穴内，基板的第一凹穴的周壁涂布有一光反射层，以提升光感应效率，接着分别在基板的第一凹穴与第二凹穴内灌注一封装胶体，以作为光发射芯片与光接收芯片的保护层，基板的上方另设有一封盖，可提高整体结构的密闭性。

Description

光学模块封装结构
技术领域
本实用新型与光学模块封装结构有关，特别是有关于一种可降低封装成本及提升光感应效率的光学模块封装结构。
背景技术
目前的手持式电子装置(例如智能型手机)为了避免触控面板被误触或因应省电的需求，通常会设有一近接光学感应模块，亦即当上述手持式电子装置一旦靠近物体的表面(例如脸部)时即会产生感应进行部分电源关闭动作。该模块的运作方式大体是利用一光发射芯片发射出一光源，经由中介物体(例如：脸部)的反射将光源投射至相邻的光感应芯片接收，再转换成电子信号进行后续处理。
然而，现有光学模块的封装形式是将光发射芯片与光接收芯片分别独立进行封装，使得整体结构具有较高的制造成本；此外，当光发射芯片所发射的光束投射到不平整的物体表面时，很容易让光接收芯片无法确实地接收到反射的光束，进而影响后续的判读结果。
实用新型内容
本实用新型的主要目的在于提供一种光学模块封装结构，其可降低制造成本与提升光感应效率。
为达成上述目的，本实用新型的光学模块封装结构包含有一基板、一光发射芯片、一光接收芯片、二封装胶体，以及一封盖。该基板定义出一光发射区与一光接收区，并于该光发射区与该光接收区分别形成一第一凹穴与一第二凹穴，其中，该第一凹穴的周壁涂布有一光反射层；光发射芯片，设于该基板的第一凹穴内，用以发射光束；该光接收芯片，设于该基板的第二凹穴内，用以接收经折射后的该光束；该二封装胶体分别灌注于该基板的第一凹穴与第二凹穴内且分别包覆该光发射芯片与该光接收芯片，以作为该光发射芯片与该光接收芯片的保护层；该封盖设于该基板的上方且具有一光发射孔与一光接收孔，该光发射孔与该光接收孔分别对应该基板的光反射区与该光接收区，用以供该光束通过。
其中该基板的第一凹穴呈渐扩状地向上延伸。
其中该基板的第二凹穴呈等径地向上延伸。
其中该基板具有一分隔部，该分隔部位于该第一凹穴与该第二凹穴之间。
其中该光反射层为金属材质。
本实用新型的有益效果是：该光学模块封装结构将该光发射芯片与该光接收芯片设置在同一个基板内同步进行封装，可有效降低制造成本，同时再通过该光反射层的设计，可提升本实用新型的光感应效率。
附图说明
以下配合附图列举以下较佳实施例，用以对本实用新型的结构及功效进行详细说明，其中：
图1为本实用新型一较佳实施例的俯视图。
图2为图1沿2-2剖线的剖视图。
具体实施方式
请先参阅图1及图2，为本实用新型一较佳实施例的光学模块封装结构10，包含有一基板20、一光发射芯片30、一光接收芯片40、二封装胶体50，以及一封盖60。
基板20在此以陶瓷基板为例，可定义出一光发射区202与一光接收区204，并于光发射区202与光接收区204分别形成一第一凹穴22与一第二凹穴24，其中，第一凹穴22呈渐扩状地向上延伸，第二凹穴24呈等径地向上延伸，而且，第一凹穴22的周壁涂布有一由金属材质所制成的光反射层26，另外，基板20于第一凹穴22与第二凹穴24之间具有一分隔部28，使光发射区202与光接收区204互不相通。
光发射芯片30设于基板20的第一凹穴22内，用以发射光束。
光接收芯片40设于基板20的第二凹穴24内，用以接收光束。
封装胶体50以透明的环氧树酯(Epoxy Resin)为例，是分别灌注于基板20的第一凹穴22与第二凹穴24内，并且分别包覆光发射芯片30与光接收芯片40，用以作为光发射芯片30与光接收芯片40的保护层。
封盖60设于基板20的上方，用以增加整体结构的密闭性。封盖60具有一光发射孔62与一光接收孔64，光发射孔62与光接收孔64分别对应基板20的第一凹穴22与第二凹穴24，用以供光束通过。
经由上述结构可知，光发射芯片30所发射的光束会经由封盖60的光发射孔62而投射在物体表面，由物体表面所反射的光束会再经由封盖60的光接收孔64而投射至光接收芯片40，光接收芯片40会将所接收的光信号转换成电子信号进行纪录及处理。在发射光束与接收光束的过程中，通过光反射层26的设计，使得光发射芯片30所发射的光束投射在不平整的物体表面时仍然能够让光接收芯片40确实地接收到反射的光束，以达到提升光感应效果的目的。另一方面，光发射芯片30与光接收芯片40是设置在同一个基板20内同步进行封装，并非如现有技术所采用的分别独立进行封装，可达到有效降低制造成本的目的。
本实用新型于前揭实施例中所揭露的构成元件，仅为举例说明，并非用来限制本案的范围，其它等效元件的替代或变化，亦应为本案的权利要求范围所涵盖。

Claims (5)

1.一种光学模块封装结构，其特征在于，包含有：
一基板，定义出一光发射区与一光接收区，并于该光发射区与该光接收区分别形成一第一凹穴与一第二凹穴，其中，该第一凹穴的周壁涂布有一光反射层；
一光发射芯片，设于该基板的第一凹穴内；
一光接收芯片，设于该基板的第二凹穴内；
二封装胶体，分别灌注于该基板的第一凹穴与第二凹穴内且分别包覆该光发射芯片与该光接收芯片；以及
一封盖，设于该基板的上方且具有一光发射孔与一光接收孔，该光发射孔与该光接收孔分别对应该基板的第一凹穴与第二凹穴。
2.如权利要求1所述的光学模块封装结构，其特征在于，其中该基板的第一凹穴呈渐扩状地向上延伸。
3.如权利要求1所述的光学模块封装结构，其特征在于，其中该基板的第二凹穴呈等径地向上延伸。
4.如权利要求1所述的光学模块封装结构，其特征在于，其中该基板具有一分隔部，该分隔部位于该第一凹穴与该第二凹穴之间。
5.如权利要求1所述的光学模块封装结构，其特征在于，其中该光反射层为金属材质。
CN2011203814573U 2011-09-27 2011-09-29 光学模块封装结构 Expired - Lifetime CN202275832U (zh)

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CN103579216A (zh) * 2012-08-10 2014-02-12 矽格股份有限公司 光学元件封装模块
CN104009030A (zh) * 2013-02-20 2014-08-27 马克西姆综合产品公司 多芯片型晶圆级封装（wlp）光学器件
CN104568784A (zh) * 2013-10-24 2015-04-29 日月光半导体制造股份有限公司 感测模块及其制造方法
CN104752416A (zh) * 2013-12-27 2015-07-01 菱生精密工业股份有限公司 具滤光层的微型光学封装结构及其制造方法
CN106241723A (zh) * 2016-08-31 2016-12-21 歌尔股份有限公司 一种光学芯片的封装结构及其制造方法
CN108364909A (zh) * 2018-01-19 2018-08-03 西安中为光电科技有限公司 一种具有发射和接收光信号功能的芯片及其制作方法
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CN103579216A (zh) * 2012-08-10 2014-02-12 矽格股份有限公司 光学元件封装模块
CN104009030A (zh) * 2013-02-20 2014-08-27 马克西姆综合产品公司 多芯片型晶圆级封装（wlp）光学器件
CN104568784A (zh) * 2013-10-24 2015-04-29 日月光半导体制造股份有限公司 感测模块及其制造方法
CN104568784B (zh) * 2013-10-24 2017-08-29 日月光半导体制造股份有限公司 感测模块及其制造方法
CN104752416A (zh) * 2013-12-27 2015-07-01 菱生精密工业股份有限公司 具滤光层的微型光学封装结构及其制造方法
CN104752416B (zh) * 2013-12-27 2018-09-18 菱生精密工业股份有限公司 具滤光层的微型光学封装结构及其制造方法
CN109075156A (zh) * 2016-04-04 2018-12-21 威世半导体有限公司 电子单元
CN109075156B (zh) * 2016-04-04 2021-12-14 威世半导体有限公司 电子单元
CN106241723A (zh) * 2016-08-31 2016-12-21 歌尔股份有限公司 一种光学芯片的封装结构及其制造方法
CN109188450A (zh) * 2017-09-08 2019-01-11 北醒（北京）光子科技有限公司 一种光学测距装置
CN108364909A (zh) * 2018-01-19 2018-08-03 西安中为光电科技有限公司 一种具有发射和接收光信号功能的芯片及其制作方法
CN108364909B (zh) * 2018-01-19 2021-01-26 西安中为光电科技有限公司 一种具有发射和接收光信号功能的芯片及其制作方法

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