CN109075156A - 电子单元 - Google Patents
电子单元 Download PDFInfo
- Publication number
- CN109075156A CN109075156A CN201780021367.3A CN201780021367A CN109075156A CN 109075156 A CN109075156 A CN 109075156A CN 201780021367 A CN201780021367 A CN 201780021367A CN 109075156 A CN109075156 A CN 109075156A
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- Prior art keywords
- substrate
- electronic unit
- electronic
- raised portion
- groove
- Prior art date
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- 238000000034 method Methods 0.000 claims description 40
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- 238000004519 manufacturing process Methods 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 20
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- 238000000608 laser ablation Methods 0.000 claims description 6
- 238000010146 3D printing Methods 0.000 claims description 5
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- 238000001746 injection moulding Methods 0.000 claims description 5
- 238000003801 milling Methods 0.000 claims description 5
- 239000011247 coating layer Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 239000004744 fabric Substances 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000009471 action Effects 0.000 claims description 2
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- 230000005855 radiation Effects 0.000 description 7
- 238000005266 casting Methods 0.000 description 5
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- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
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- 230000035515 penetration Effects 0.000 description 1
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Classifications
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- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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Abstract
本发明涉及一种电子单元,其包括至少一个第一电子部件(14)和至少一个第二电子部件(14'),它们安装在基板上。在第一和第二电子部件(14,14')之间设置有屏蔽物,该屏蔽物包括升高部分,该升高部分从基板(12)限定的平面突出或者从所述基板的表面延伸并用作屏蔽,升高部分(34)与基板(12)一体形成。
Description
技术领域
本发明涉及一种电子单元,其具有至少一第一电子部件和至少一第二电子部件,第一电子部件和第二电子部件固定至一基板。
背景技术
当基板上放置有多个部件,如果它们中的至少一个发出电磁辐射,会出现问题,尤其是当这些部件在空间上彼此非常接近时。辐射可能会损害其他部件的功能。但是,在某些情况下或者由于特定原因,甚至需要将发出电磁辐射的部件和相应的接收器部件彼此紧挨着放置,这是不可避免的。在这种情况下,必须确实地防止发出的辐射直接作用于接收器部件。为此,可以在两个部件之间设置屏蔽物。然而,已知的屏蔽物因其设计相对复杂而因此制造昂贵。
发明内容
因此,本发明的一个目的是,提供一种初始提及类型的电子单元,其包括设置在第一电子部件和第二电子部件之间的屏蔽物,且可以用尽可能紧凑的设计来进行简单并廉价的制造。
这一目的可以通过具有如下特征的电子单元得以满足。
根据本发明,屏蔽物是从基板限定的平面突出或从其表面延伸的升高部分,其起到屏蔽的作用并且与基板一体形成。即,屏蔽物由基板的材料形成为非常大的部分,并且从承载部件的基板的一部分延伸。因此,升高部分代表阻碍辐射的屏障。升高部分为例如是在两个部件之间延伸的一种壁,因此屏蔽了由两个部件之一发出的辐射,使得所述辐射不直接作用在第二电子部件上,例如相应的传感器部件。 单件式结构降低了设备的制造成本,且省略了之后对升高部分的后续粘合或模制。
根据本发明的单元,其优选地形成为一部件,尤其是SMD部件,该部件又安装在更大的电子单元中,例如,在一个电路中。
说明书、从属权利要求和附图中阐述了本发明的其他实施方式。
根据有利的实施方式,升高部分是通过从基板尤其电路板的剥离生产工艺而产生。例如,基板的材料从升高部分周围的空余处剥离,例如,通过蚀刻,铣削和/或激光烧蚀剥离。
然而,也可以通过注塑工艺方法生产具有升高部分的基板。即基板是所谓的模制互连器件(MID)。因此,在基板的注射成型期间,基板的升高部分和—其他结构(如果需要)会成形。这减少了制造基板的空间结构所需的方法步骤。
基板也可以通过3D印刷生产。还可以想到的是,基板由层压膜形成,在升高部分的区域中提供比在基板的相邻区域中更多的膜。
可以规定,第一电子部件设置在基板的第一凹槽中和/或第二电子部件布置在基板的第二凹槽中。由此,在具有相同的高度下,提高了升高部分的屏蔽效果。换句话说,在相应的凹槽中的一个部件或两个部件的布置,特别是单独的凹槽,会得到改进的屏蔽和降低电子单元的结构高度。
第一电子部件和/或第二电子部件可以通过导电接触元件,特别是导线,而电性连接至设置在第三凹槽的基部的接触点。这一方式还降低了电子单元的结构高度,因为接触元件与接触点的连接点是“下沉的”。从这方面来说,任何部件可以连接到布置在单独的第三凹槽中的接触点。
电子部件可以具有接触部分,该接触部分连接到接触元件并且布置在电子部件的远离第一凹槽的基部的一侧。电子部件特别地为半导体元件。
特别地,升高部分比接触元件更远离由基板限定的平面。例如,升高部分的上边缘限定了电子单元的结构高度。
为了改善屏蔽效果,可以至少部分地涂覆升高部分,特别是用屏蔽电磁辐射的材料涂覆。由此可以使升高部分基本上不透过,以便屏蔽辐射。例如,屏蔽物可以基于所使用的涂层材料的反射和/或吸收辐射的效果。导电材料具有这样的屏蔽效果,但是许多非金属材料也是如此。反射硅酸盐或吸收有机化合物。
附加地或替代地,第一凹槽、第二凹槽和/或(如果存在的话)第三凹槽可以至少部分地用导电材料涂覆。如果需要,所述凹槽的涂层可以与升高部分的涂层的一部分接触。
本发明还涉及一种制造电子单元的方法,该电子单元特别地是根据上述实施例之一设计的电子单元。该方法包括以下步骤:
- 提供基板;
- 区域性地剥离或去除基板的材料,以产生从基板限定的平面突出或从其表面延伸并且用作屏蔽的升高部分,特别是通过铣削,蚀刻和/或激光烧蚀剥离或去除;和
- 将第一电子部件和第二电子部件安装在基板上,使得升高部分布置在两个电子部件之间。
制造尤其是根据前述实施方式之一的电子单元的替代方法包括以下步骤:
- 通过注射成型工艺形成基于塑料的基板,使得产生从基板限定的平面突出或从其表面延伸并且用作屏蔽的升高部分;和
- 将第一电子部件和第二电子部件安装在基板上,使得升高部分布置在两个电子部件之间。
制造尤其是根据上述实施例之一的电子单元的另一种方法,包括以下步骤:
- 通过3D打印工艺形成基于塑料的基板,使得产生从基板限定的平面突出或从其表面延伸并用作屏蔽的升高部分;和
- 将第一电子部件和第二电子部件安装在基板上,使得升高部分布置在两个电子部件之间。
因此,3D打印是生产单件式基板的“建设性的”方法。
然而,另一“建设性的”制造特别是根据上述实施例之一的制造电子单元的方法包括以下步骤:
- 通过薄膜或层,特别是织物垫,其连接到粘合剂,特别是树脂,来形成基于塑料的基板,使得产生从由基板限定的平面突出或从其表面延伸的起到屏蔽作用的升高部分;和
- 将第一电子部件和第二电子部件安装在基板上,使得升高部分布置在两个电子部件之间。
可以在连接之前将薄膜切割成适当的尺寸,使得它们以彼此叠置的状态产生所需的基板的三维结构。特别地,基板在升高部分的区域中具有比在相邻区域中更多数量的膜或层。
例如,上述方法包括层压多个膜或层,例如从传统电路板的制造中已知的的方法。
同样可以想到上述方法的混合形式,以获得针对相应应用优化的基板或降低其制造成本。
然而,所有方法的共同之处在于获得了一种单元,其中升高部分是基板的整体部件。升高部分特别地由与基板的其余部分相同的材料构成。因此,升高部分随后无需固定到本身完整的基板上。
升高部分可以至少部分地被涂覆,特别地,是用屏蔽电磁辐射的材料涂覆。
附图说明
下面将仅仅通过示例并参考附图来描述有利的实施方式,借以阐明本发明。所示附图包括:
图1是电子单元的第一实施方式的剖视图;
图2是电子单元的第二实施方式的剖视图;
图3是根据本发明的单元的实施方式的透视图;
图4和图5是具有凹槽的基板的不同截面图;
图6至图10是电子单元的另一实施方式;
图11是第一凹槽或第二凹槽在两个横截面中的不同实施方式;
图12至图14是用于制造第一凹槽或第二凹槽的制造方法的实施方式;以及
图15和图16是以平面图或横截面方式呈现的电子单元的又一实施方式。
具体实施方式
图1示出了电子单元10,其包括基板12(具体地说是电路板)和电子部件14。但是电子部件14并不是设置在基板12的表面13上,而是设置在凹槽16中,这样,部件14的上边缘仅稍微突出于图1的顶部的一侧,或者超出基板12的表面。凹槽16也可以至少深至使其完全容纳部件14。
凹槽16包括通道开口20,该通道开口穿过基板12并且在涂覆过程(中在一侧闭合,即由涂层材料形成的基部22以本身已知的涂覆工艺的方式形成。凹槽16的侧壁和表面13的相邻区域也在此过程中或者在单独的步骤中被涂覆。涂层材料、涂层厚度和/或涂覆部位的选择可以适应于不同的需求。
部件14也可以以传统方式固定于基部22。从这个方面来说,可以设置对部件14的接触。然而,也可以想到的是,部件14可以特别地通过粘接的方式固定于基部22,而非二者建立电接触的方式。
部件14优选地为半导体部件,为了能够将部件14连接至电端子,提供导线26,其导电地固定于设置在部件14的上侧的接触表面。导线26和接触点之间的连接的建立可以通过例如楔形接合来进行。
导线26与第二凹槽18的基部24建立导电接头28。基部24导电,且其制造方式与凹槽16的基部22相似/相同。导线26和基部22之间的接头28通过“球焊”的方式进行。因此,基部24是导线26的接触点。接触点又可以经由导电带或其他措施连接至另外的端子,以集成至单元10,例如集成到一电路中。
部件14和基部24之间的连接的建立可以以下列方式方便地进行:
首先熔化导线26的一端以形成熔融的球形物,将该球形物按压至相应的接触表面/接触点(此处为部件14)。随后将导线26引至第二接触点(这里为部件14上侧的接触表面),并在此通过超声波、热和/或压力的方式解除。通过示例描述的方法因此为“反向球形/楔形接合工艺”。可以同样地使用其他接触方法。例如,在上述过程之前,可以在部件14的上侧的接触点上形成“球形物”。然后剪下导线26,并随后进行“反向球形/楔形接合工艺”,之后导线26并不直接固定于部件14的接触点,而是直接固定于位于接触点的球形物(反向的“球缝在球上”,即反向BSOB)。
由于必须将大量的热量引入到导线26中以形成熔融的球状物,邻接接头28的导线26的一节导线30会短暂地承受高热负荷。因此该节导线30相比导线26的承受较低热符合的区域在机械上会更敏感。凹槽18中接头28的“下沉”使得可以在接合工艺过程中不必使热负荷区域30机械变形,即,它可以被“向上拉”而不会对整个设备的结构高度产生负面影响。
为固定设备并保护其部件,使用合适的材料进行浇铸(浇铸合成物31)
图2示出了替代实施方式的电子单元10'。这里不存在通道开口,但凹槽16的基部22和凹槽18的基部24由基板12——例如此时为电路板——自身形成。凹槽16、18因此是基板12的材料中的凹陷。它们不穿透基板12。由通道开口产生的组合凹槽和形成为电子单元中的凹陷的凹槽同样也是可能的(参见例如图11)。可以理解,凹槽16、18可以完全或部分地涂覆。通过示例示出的是,凹槽18具有部分涂覆的部位(接触点32),其以与图1中所示实施方式的电子单元10类似的配置连接到导线26。
为了保护电子单元10'及其部件,还使用浇铸合成物(未示出)浇铸。
术语“基板”在本申请公开的框架内作广泛解释。通常可以相应地配置引线框架。引线框架还可以具有多个单独的载体部分,这些载体部分通过塑料彼此连接。然而,基板12优选是电路板。
单元10、10'的凹槽16、18包括侧壁21,侧壁21在所有侧面上邻接相应的基部22、24并因此在所有侧面围绕它。通常还可以想到使凹部16、18的一或多个侧面(部分地)敞开。然而,优选地,在接头28或接触点32与部件14之间设置部分基板12'。即,相应的凹槽16、18优选地具有面向另一个凹槽18或16的至少一个侧壁21或部分侧壁。部分基板12'可以具有与基板12的与凹槽16相邻的其他区域基本相同的厚度。
图3示出了电子单元10''的透视图。电子单元10''包括分别设置在凹槽16或16'中的两个电子部件14、14'。它们分别通过导线26、26'连接到凹槽18或18'中的接触点或相应的基部。凹槽16、16'、18、18'设计成例如图1的凹槽那样。
特别地,当部件14、14'是发出电磁辐射的发射器部件和相应的接收器部件时,在相邻布局的部件14、14'中的部件14、14'之间设置可靠的屏蔽物是明智的。在这种情况下,该屏蔽物由在部件14、14'之间延伸的壁34提供。它是从基板12限定的平面上升的升高部分。或者换句话说:壁32从基板12的表面13延伸。
壁34与基板12一体地连接,或者它是基板12的一部分。这样的好处是可以以简单的方式生产。例如,它是通过剥离材料的生产方法由基板的空白处成形。即通过一或多个合适的工艺,例如蚀刻、铣削和/或激光烧蚀,去除壁34周围的区域而成形。从这个方面来说,凹槽16、18、16'、18'或相应的通道开口20或基板也可以由非穿透的凹陷形成(参见例如图2和图11)。
但是,也可以想到借助MID技术形成基板12。从这个方面来说,它是一种生产模塑互连器件的工艺。因此,这些互连装置是注塑成型的塑料部件,其具有适当应用的金属导电带和/或涂层部分。
另一种制造工艺是所谓的3D打印。即通过合适的材料以所需的几何形状逐层构建基板12,使得凹槽16、18、16'、18'和/或壁34根据需要“建设性地”制造。在理想情况下,不再需要剥离这一工作步骤。
基板12的类似的“构造性”制造变体提供了具有不同几何形状的多层的层压。例如,合适形状的织物垫——例如其具有开口,且其中设置凹槽16、18、16'、18'——彼此叠置并通过树脂连接。还可以将基板12配置为在特定区域中更厚——例如,因为在特定区域中设置有更多数量的垫层——例如,以形成壁34。
所描述的工艺的混合形式也是可能的。例如,部分基板可以通过剥离方法步骤而制备,然后将其层压至另一部分基板(基部,通常本身是层压组件)。
获得单件式基板12的所有制造变体是很常见的。
在本示例中可以认识到,壁34在两侧设置有涂层36,在特定应用中单面涂层也可以是足够的,涂层可以根据需要而连接到其他涂层部分。在本实施例中,壁34左侧的涂层36与凹槽16的涂层接触。涂层36的材料优选地选择为能使壁34对于由部件14和/或部件14'或至少发出的的辐射是不可穿透的,或者至少使其衰减。
壁34优选地还限定浇铸合成物31的上边缘,以形成紧凑的结构单元而不会突出边缘。
图4以透视图方式示出了设有壁34但不具有部件14、14'或导线26、26'的基板12。凹槽16示出为部分敞开,以示出其基本上如参照图1所解释的那样构造。
图5以完整的截面方式示出了图4的基板12,使得也可以看出壁34的设计是从布置在凹槽16、16'之间的部分基板 12''延伸。基板12和壁34形成为一体。壁34在连接至凹槽16'(左)或16(右)的相应涂层的两侧上具有涂层36。
壁屏蔽辐射的想法可以独立于将电子部件和接触点安置在分开的凹槽中的想法而实现。
图6至图10示例性地示出了根据本发明的电子单元的实施方式可能配置的种类。
例如单元10a包括两个凹槽18,每个凹槽18用于接触两个导线26中的一个,导线26都连接到部件14(参见图6)。
与此相反,单元10b具有两个部件14,每个部件布置在单独的凹槽16中,并且每个部件连接到导线26。导线26又连接到布置在同一凹槽18中的分离的接触点32(参见图7)。
单元10c与单元10b的不同之处在于,部件14布置在同一凹槽16中(参见图8)。
单元10d中,部件14——与单元10c一样——布置在同一凹槽16中。但是,与部件10a一样,设置有两个分离的凹槽18(参见图9)。
单元10e具有布置在单独的凹槽16中的部件14(参见图10)。部件14上固定有8根导线26,这些导线又连接至分离的接触点32,接触点32布置在8个分离的凹槽18中。
上述实施方式的混合形式是容易实现的。凹槽16、18的数量和构造(例如几何形状涂层、......)可以适应各自的需求。例如,从图11中可以看出,这里凹槽16、18具有不同的深度。
下面将参考图12和图14描述不同的制造凹槽16、18的实施方式。
图12显示了在一侧涂覆的基底12。涂层36'例如是金属膜。凹槽16、18通过材料剥离工艺引入到基板12中。该方法优选是激光烧蚀工艺。如果涂层36'是金属(例如Cu),则当基板12已经完全穿透时,剥离自动结束(参见图13中的状态)。如果使用的激光太强大,则入射激光束一旦入射到朝向基板的涂层36'的表面上就会被反射。可以根据需要局部地去除涂层36'(参见图13)。
随后可选择地涂覆涂层36'',其部分或完全给凹槽16、18加衬(参见图14)。在需要时,与涂层36''的涂覆同时或在单独的步骤中,也可以部分或完全地涂覆或覆盖涂层36'。涂层36'、36''的材料可以相同或者不同。
图15示出了具有部件14(例如LED)的单元10f,该部件布置在一侧敞开的涂覆有涂层(涂层36'')的凹槽16''中。因此,部件14可以以无阻碍的方式向右发出电磁辐射S。连接至部件14的接合导线26连接到布置在沿圆周方向封闭的凹槽18中的接触点32(也参见图16)。单元10f的部件及其(尤其是其)电接触是通过浇铸合成物31而得到保护。
参考标记列表
10, 10', 10", 10a-10f 电子单元
12 基板
12', 12'' 部分基板
13 表面
14, 14' 电子部件
16, 16', 16'' 凹槽
18, 18', 凹槽
20 通道开口
21 侧壁
22, 24 基部
26, 26' 导线
28 接头
30 一节导线
31 浇铸合成物
32 接触点
34 壁
36, 36', 36'' 涂层
S 辐射
Claims (20)
1.一种电子单元,具有固定在基板(12)上的至少一个第一电子部件(14)和至少一个第二电子部件(14'),其中屏蔽物设置在第一和第二电子部件(14,14')之间,其包括从所述基板限定的平面突出或从其表面延伸的升高部分(34),该升高部分起到屏蔽的作用并且与所述基板(12)一体形成。
2.根据权利要求1所述的电子单元,
其特征在于,
所述升高部分(34)由所述基板(12)通过剥离制造方法形成,特别是通过蚀刻、铣削和/或激光烧蚀。
3.根据权利要求1所述的电子单元,
其特征在于,
所述基板(12)通过MID工艺生产。
4.根据权利要求1所述的电子单元,
其特征在于,
所述基板(12)通过3D打印生产。
5.如权利要求1所述的电子单元,
其特征在于,
所述基板(12)由层压膜形成,并且在所述升高部分(34)的区域中设置的膜比在所述基板(12)的相邻区域中设置的膜更多。
6.根据前述权利要求中任一项所述的电子单元,
其特征在于,
第一电子部件(14)设置在所述基板(12)的第一凹槽(16)中;和/或第二电子部件(14')设置在所述基板(12)的第二凹槽中。
7.根据前述权利要求中任一项所述的电子单元,
其特征在于,
第一电子部件(14)和/或第二电子部件(14')通过导电接触元件(26,26'),尤其是导线,而电性地连接至布置在第三凹槽(18,18')的基部(24)处的接触点(32)。
8.根据前述权利要求中任一项所述的电子单元,
其特征在于,
所述升高部分(34)从所述基板(12)限定的平面进一步突出或者从其表面延伸得比接触元件(26,26')更远。
9.根据前述权利要求中任一项所述的电子单元,
其特征在于,
所述升高部分(34)至少部分地被涂覆,特别地,是用屏蔽电磁辐射的材料予以涂覆。
10.根据前述权利要求中任一项所述的电子单元,
其特征在于,
第一凹槽(16)、第二凹槽(16')和/或——如果存在——第三凹槽(18,18')至少部分地涂有导电材料。
11.根据权利要求9或10所述的电子单元,
其特征在于,
第一凹槽(16)的涂层、第二凹槽(16')的涂层和/或——如果存在——第三凹槽(18,18')的涂层接触于涂层(36)的一部分或升高部分(34)。
12.根据前述权利要求中任一项所述的电子单元,
其特征在于,
第一电子部件(14)和/或第二电子部件(14')是半导体部件。
13.根据前述权利要求中任一项所述的电子单元,
其特征在于,
第一电子部件(14)是发出电磁辐射的部件,第二电子部件(14')是检测电磁辐射的部件。
14.一种制造电子单元的方法,所述电子单元特别地为根据前述权利要求中任一项所述的电子单元,方法包括以下步骤:
- 提供基板(12);
- 区域性地剥离或去除所述基板(12)的材料,以产生从所述基板限定的平面突出或从其表面延伸的升高部分(34),其起到屏蔽的作用,特别地,通过铣削、蚀刻和/或激光烧蚀剥离或去除;和
- 将第一电子部件(14)和第二电子部件(14')安装在基板(12)上,使得所述升高部分(34)布置在两个电子部件之间。
15.一种制造电子单元的方法,所述电子单元特别地为根据权利要求1至13中任一项所述的电子单元,方法包括以下步骤:
- 通过注射成型工艺形成基于塑料的基板(12),使得产生从所述基板(12)限定的平面突出或从其表面延伸并用作屏蔽的升高部分(34);和
- 将第一电子部件(14)和第二电子部件(14')安装在所述基板(12)上,使得所述升高部分(34)布置在两个电子部件之间。
16.一种制造电子单元的方法,所述电子单元特别地为根据权利要求1至13中任一项所述的电子单元,方法包括以下步骤:
- 通过3D打印工艺形成基于塑料的基板(12),使得产生从所述基板(12)限定的平面突出或从其表面延伸并用作屏蔽的升高部分(34);和
- 将第一电子部件(14)和第二电子部件(14')安装在所述基板(12)上,使得所述升高部分(34)布置在两个电子部件之间。
17.一种制造电子单元的方法,所述电子单元特别地为根据权利要求1至13中任一项所述的电子单元,方法包括以下步骤:
- 通过薄膜尤其织物垫,其连接到粘合剂尤其是树脂,来形成基于塑料的基板(12),使得产生从所述基板(12)限定的平面突出或从其表面延伸并起到屏蔽作用的升高部分(34);和
- 将第一电子部件(14)和第二电子部件(14')安装在所述基板(12)上,使得所述升高部分(34)布置在两个电子部件之间。
18.根据权利要求17所述的方法,
其特征在于,
在连接之前将薄膜切割成一定尺寸,使得它们在彼此叠置的状态下产生所需的基板(12)的三维结构。
19.根据权利要求17或18所述的方法,
其特征在于,
所述基板(12)在所述升高部分(34)的区域中具有比在相邻区域中更多数量的膜。
20.根据权利要求14或19所述的方法,
其特征在于,
所述升高部分(34)至少部分地被涂覆,特别地,是用屏蔽电磁辐射的材料涂覆。
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EP (1) | EP3437130B1 (zh) |
JP (1) | JP2019514229A (zh) |
KR (1) | KR102268030B1 (zh) |
CN (1) | CN109075156B (zh) |
DE (1) | DE102016106135A1 (zh) |
DK (1) | DK3437130T3 (zh) |
ES (1) | ES2927239T3 (zh) |
FI (1) | FI3437130T3 (zh) |
HU (1) | HUE059972T2 (zh) |
IL (1) | IL262091B (zh) |
PL (1) | PL3437130T3 (zh) |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0513068U (ja) * | 1991-07-30 | 1993-02-19 | サンケン電気株式会社 | 発光素子と受光素子の容器 |
US20040233648A1 (en) * | 2003-05-19 | 2004-11-25 | Tdk Corporation | Electronic component module |
US20050012574A1 (en) * | 2003-07-18 | 2005-01-20 | Alcatel | Device with hybrid microwave circuits shielded by elastic contact members |
CN202275832U (zh) * | 2011-09-27 | 2012-06-13 | 菱生精密工业股份有限公司 | 光学模块封装结构 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61204989A (ja) | 1985-03-08 | 1986-09-11 | Toshiba Corp | 半導体光電変換装置 |
TW594888B (en) * | 2001-09-05 | 2004-06-21 | Hitachi Ltd | Semiconductor device and manufacturing method thereof and wireless communication device |
DE10205450A1 (de) | 2002-02-08 | 2003-08-28 | Infineon Technologies Ag | Schaltungsträger und Herstellung desselben |
US7025640B2 (en) * | 2002-09-23 | 2006-04-11 | Delphi Technologies, Inc. | Circuit board inter-connection system and method |
WO2006046221A2 (en) * | 2004-10-29 | 2006-05-04 | Peter O'brien | An illuminator and manufacturing method |
DE102005025606B4 (de) | 2005-06-03 | 2015-10-01 | Vishay Semiconductor Gmbh | Sonnensensor und Herstellungsverfahren hierfür |
US9000579B2 (en) * | 2007-03-30 | 2015-04-07 | Stats Chippac Ltd. | Integrated circuit package system with bonding in via |
US20090189261A1 (en) | 2008-01-25 | 2009-07-30 | Lay Yeap Lim | Ultra-Thin Semiconductor Package |
JP2010114114A (ja) * | 2008-11-04 | 2010-05-20 | Rohm Co Ltd | 反射型フォトインタラプタ |
DE102009019782A1 (de) * | 2009-05-02 | 2010-11-04 | Valeo Schalter Und Sensoren Gmbh | Verfahren zur Herstellung von durchkontaktierbaren Leiterplatten |
US20110051352A1 (en) * | 2009-09-02 | 2011-03-03 | Kim Gyu Han | Stacking-Type USB Memory Device And Method Of Fabricating The Same |
JP2011187677A (ja) * | 2010-03-09 | 2011-09-22 | Panasonic Corp | モジュール |
DE102012215449A1 (de) * | 2012-08-31 | 2014-03-27 | Osram Opto Semiconductors Gmbh | Gehäuse für ein elektronisches bauelement, elektronische baugruppe, verfahren zum herstellen eines gehäuses für ein elektronisches bauelement und verfahren zum herstellen einer elektronischen baugruppe |
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2016
- 2016-04-04 DE DE102016106135.2A patent/DE102016106135A1/de not_active Withdrawn
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2017
- 2017-03-15 ES ES17713190T patent/ES2927239T3/es active Active
- 2017-03-15 DK DK17713190.1T patent/DK3437130T3/da active
- 2017-03-15 JP JP2019502147A patent/JP2019514229A/ja active Pending
- 2017-03-15 HU HUE17713190A patent/HUE059972T2/hu unknown
- 2017-03-15 KR KR1020187032048A patent/KR102268030B1/ko active IP Right Grant
- 2017-03-15 PL PL17713190.1T patent/PL3437130T3/pl unknown
- 2017-03-15 US US16/091,010 patent/US10714461B2/en active Active
- 2017-03-15 CN CN201780021367.3A patent/CN109075156B/zh active Active
- 2017-03-15 WO PCT/EP2017/056155 patent/WO2017174312A2/de active Application Filing
- 2017-03-15 FI FIEP17713190.1T patent/FI3437130T3/de active
- 2017-03-15 PT PT177131901T patent/PT3437130T/pt unknown
- 2017-03-15 EP EP17713190.1A patent/EP3437130B1/de active Active
- 2017-03-23 TW TW106109708A patent/TWI710091B/zh active
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2018
- 2018-10-03 IL IL262091A patent/IL262091B/en unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0513068U (ja) * | 1991-07-30 | 1993-02-19 | サンケン電気株式会社 | 発光素子と受光素子の容器 |
US20040233648A1 (en) * | 2003-05-19 | 2004-11-25 | Tdk Corporation | Electronic component module |
US20050012574A1 (en) * | 2003-07-18 | 2005-01-20 | Alcatel | Device with hybrid microwave circuits shielded by elastic contact members |
CN202275832U (zh) * | 2011-09-27 | 2012-06-13 | 菱生精密工业股份有限公司 | 光学模块封装结构 |
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US20190067259A1 (en) | 2019-02-28 |
TWI710091B (zh) | 2020-11-11 |
IL262091A (en) | 2018-11-29 |
KR102268030B1 (ko) | 2021-06-23 |
WO2017174312A2 (de) | 2017-10-12 |
EP3437130A2 (de) | 2019-02-06 |
CN109075156B (zh) | 2021-12-14 |
EP3437130B1 (de) | 2022-09-07 |
IL262091B (en) | 2022-04-01 |
HUE059972T2 (hu) | 2023-01-28 |
PT3437130T (pt) | 2022-09-27 |
FI3437130T3 (en) | 2022-12-15 |
DE102016106135A1 (de) | 2017-10-05 |
KR20180131604A (ko) | 2018-12-10 |
TW201803077A (zh) | 2018-01-16 |
JP2019514229A (ja) | 2019-05-30 |
WO2017174312A3 (de) | 2017-12-14 |
ES2927239T3 (es) | 2022-11-03 |
DK3437130T3 (da) | 2022-10-17 |
PL3437130T3 (pl) | 2023-01-23 |
US10714461B2 (en) | 2020-07-14 |
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