CN104752416A - 具滤光层的微型光学封装结构及其制造方法 - Google Patents
具滤光层的微型光学封装结构及其制造方法 Download PDFInfo
- Publication number
- CN104752416A CN104752416A CN201410165506.8A CN201410165506A CN104752416A CN 104752416 A CN104752416 A CN 104752416A CN 201410165506 A CN201410165506 A CN 201410165506A CN 104752416 A CN104752416 A CN 104752416A
- Authority
- CN
- China
- Prior art keywords
- light
- filter layer
- micro
- chip
- encapsulating structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 230000003287 optical effect Effects 0.000 title abstract description 24
- 238000004806 packaging method and process Methods 0.000 title abstract 6
- 239000000084 colloidal system Substances 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000001914 filtration Methods 0.000 claims abstract description 16
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 238000012856 packing Methods 0.000 claims description 58
- 238000000034 method Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000010023 transfer printing Methods 0.000 claims description 3
- 238000004020 luminiscence type Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 11
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 208000032365 Electromagnetic interference Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000009747 press moulding Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Optical Filters (AREA)
Abstract
本发明关于一种具滤光层的微型光学封装结构,包含有一具有一光发射区及一光接收区的基板,一设于光发射区的光发射芯片,一设于光接收区的光接收芯片,二封装胶体分别包覆光发射芯片及光接收芯片,且彼此呈一间隔地设于光发射区及光接收区,以及一形成于各封装胶体表面的滤光层,以供过滤不同波长的光源。由此,本发明的封装结构不需于各封装胶体之间及外部设置阻隔件及保护盖,以达成薄型微小化的功效,此外,本发明不须额外增设滤光片即具有过滤特定波长的可见光的功效。
Description
技术领域
本发明是关于一种光学封装结构,特别是指一种具滤光层的微型光学封装结构及其制造方法。
背景技术
现今电子科技日新月异,光学感测技术更是被广泛的应用,如指纹、瞳孔辨识系统,或是环境光、近光感测系统等应用上。
现有的光学封装结构1如图1所示,其主要包含有一基板2、一光发射芯片3、一光接收芯片4以及一封装壳体5,其中该光发射芯片3与该光接收芯片4设置于该基板2上,而该封装壳体5罩盖于该光发射芯片3及该光接收芯片4且接合于该基板2上,为了避免该光发射芯片3发射的光源经散射或绕射而直接照射到该光接收芯片4所造成的干扰问题,故于该封装壳体5内形成有一隔板6,用以阻隔该光发射芯片3与该光接收芯片4,如此一来,该光发射芯片3所产生的光源将受到该隔板6的阻挡,而不会经由散射或绕射的方式传递至该光接收芯片4,以增加该光接收芯片4的灵敏度;然而,此类光学封装结构1虽能达到将该光发射芯片3与该光接收芯片4阻隔的目的,但为达成此目的必须增设具有该挡板6结构的封装壳体5,因此该光学封装结构1的体积将无法有效地缩小,而此显然无法符合现今光学封装产业薄型化及微小化的需求。
除此之外,会影响光学灵敏度的原因不仅仅只在该光发射芯片3散射或绕射该光接收芯片4而已,其不同波长的可见光(380nm至780nm)也是影响光学灵敏度的重要关键,如图2所示,此类光学封装结构1’为了避免可见光对灵敏度的影响,故于该封装壳体5的光发射孔7及光接收孔8上增设一滤光片9,由此将不同的可见光滤除,以提升该光学封装结构1’的光接收芯片4的辨识力;然而,增加该滤光片9不仅该光学封装结构1’的体积无法薄型微小化,其制程上需多一道工序,且材料成本更是随其相对增加,如此显然有顾此失彼之疑。
综上所陈,现有的光学封装结构1、1’仍具上述的缺失而有待改进。
发明内容
本发明的主要目的在于提供一种具滤光层的微型光学封装结构,其不需于各封装胶体之间及外部设置阻隔件及保护盖,以达成薄型微小化的功效,此外,本发明还不须额外增设滤光片即具有过滤特定波长的可见光的功效。
为了达成上述目的,本发明所提供一种具滤光层的微型光学封装结构包含有一基板、一光发射芯片、一光接收芯片、二封装胶体以及一滤光层,其中该基板具有一光发射区及一光接收区,该光发射芯片及该光接收芯片分别设于该光发射区及该光接收区,各该封装胶体分别包覆该光发射芯片及该光接收芯片,且彼此呈一间隔地设于该光发射区及该光接收区,以及该滤光层形成于各该封装胶体的表面,以供过滤不同波长的光源。
其中该滤光层具有一光发射孔及一光接收孔,且该光发射孔及该光接收孔分别位于该光发射芯片及该光接收芯片的上方。
其中该光发射孔及该光接收孔的形状为圆形、方形或多边形。
其中各该封装胶体可单一或全部具有一聚光单元。
其中该滤光层具有一光发射孔,且该光发射孔位于该光发射芯片的上方。
其中该滤光层具有一光接收孔,且该光接收孔位于该光接收芯片的上方。
一种具滤光层的微型光学封装结构,其包含有:一基板,具有一光发射区;一光发射芯片,设于该光发射区;一封装胶体,形成于该光发射区且包覆该光发射芯片;以及一滤光层,形成于该封装胶体的表面,以供过滤不同波长的光源。
其中该滤光层具有一光发射孔,且该光发射孔位于该光发射芯片的上方。
一种具滤光层的微型光学封装结构,其包含有:一基板,具有一光接收区;一光接收芯片,设于该光接收区;一封装胶体,形成于该光接收区且包覆该光接收芯片;以及一滤光层,形成于该封装胶体的表面,以供过滤不同波长的光源。
其中该滤光层具有一光接收孔,且该光接收孔位于该光接收芯片的上方。
其中该滤光层为导电材质。
其中该滤光层为不透光材质。
一种具滤光层的微型光学封装结构的制造方法,其包含有下列步骤:提供该基板且定义出该光发射区及该光接收区;分别提供该光发射芯片及该光接收芯片于该光发射区及该光接收区;提供各该封装胶体且包覆该光发射芯片及该光接收芯片;以及形成该滤光层于各该封装胶体的表面。
其还包含有提供至少一遮蔽件于各该封装胶体的表面,且可位于该光发射芯片或该光接收芯片的上方,待形成该滤光层后移除该至少一遮蔽件的步骤。
其还包含有同步提供一聚光单元于单一该封装胶体或各该封装胶体的步骤。
其该滤光层是以转印法、贴覆法、涂布法、喷涂法、镀膜法或溅镀法形成于各该封装胶体的表面。
其各该封装胶体是以模压制程形成且包覆于该发光芯片及该光接收芯片。
由此,本发明的具滤光层的微型光学封装结构及其制造方法不需于各该封装胶体之间及外部设置阻隔件及保护盖,即可阻隔该光发射芯片的散射或绕射光源传递至该光接收芯片,用以避免光线干扰并达成结构薄型化及微小化的功效,此外,本发明的滤光层形成于各该封装胶体的表面,故不需要额外在光发射孔及光接收孔上增设滤光片即具有过滤特定波长的可见光的功效,以利于减少制程工序及成本。
为使贵审查委员能进一步了解本发明的构成、特征及其目的,以下乃举本发明的若干实施例,并配合图式详细说明如后,同时让熟悉该技术领域者能够具体实施,但以下所述,仅是为了说明本发明的技术内容及特征而提供的一实施方式,凡为本发明领域中具有一般通常知识者,于了解本发明的技术内容及特征之后,以不违背本发明的精神下,所为的种种简单的修饰、替换或构件的减省,皆应属于本发明意图保护的范畴。
附图说明
以下将通过所列举的实施例,配合随附的图式,详细说明本发明的技术内容及特征,其中:
图1为现有的光学封装结构的剖面图。
图2为现有的具有滤光片光学封装结构的剖面图。
图3为本发明第一较佳实施例所提供的具滤光层的微型光学封装结构的剖面图。
图4A至图4F为本发明该第一较佳实施例所提供的具滤光层的微型光学封装结构及其制造方法的流程图。
图5A至图5D为本发明该第一较佳实施例所提供的具滤光层的微型光学封装结构的俯视图,主要显示不同遮蔽件的形状以形成不同态样的滤光层。
图6A至图6H为本发明该第一较佳实施例所提供的具滤光层的微型光学封装结构的剖面图,主要显示各该封装胶体具有不同形状的聚光单元的态样。
图7为本发明第二较佳实施例所提供的具滤光层的微型光学封装结构的剖面图,主要显示仅具光发射功能的封装结构。
图8为本发明第三较佳实施例所提供的具滤光层的微型光学封装结构的剖面图,主要显示仅具光接收功能的封装结构。
【符号说明】
1 光学封装结构 2 基板
3 光发射芯片 4 光接收芯片
5 封装壳体 6 隔板
7 光发射孔 8 光接收孔
9 滤光片
10 光学封装结构 10’ 光学封装结构
10″ 光学封装结构
20 基板 21 光发射区
23 光接收区
30 光发射芯片
40 光接收芯片
50 封装胶体 51 聚光单元
60 滤光层 61 光发射孔
63 光接收孔
70 焊线
80 遮蔽件
具体实施方式
为了详细说明本发明的结构、特征及功效所在,兹列举一第一较佳实施例并配合下列图式说明如后,其中:
请参阅图3所示,为本发明该较第一佳实施例所提供的具滤光层的微型光学封装结构10,其包含有:
一基板20,具有一光发射区21及一光接收区23。
一光发射芯片30,设于该光发射区21。
一光接收芯片40,设于该光接收区23。
二封装胶体50,分别包覆该光发射芯片30及该光接收芯片40,且彼此呈一间隔地设于该光发射区21及该光接收区23。
一滤光层60,形成于各该封装胶体50的表面,以供过滤不同波长的光源。此外,该滤光层60除可为过滤光源的材质外,其还可为导电的材质或不透光的材质,若该滤光层60为导电材质,其能达到防止电磁干扰(Electro Magnetic Interference,EMI)的功效;若该滤光层60为不透光材质,其将可有效地阻隔外界的光源。
请参阅图4A至图4F所示,为本发明该第一较佳实施例的具滤光层的微型光学封装结构10的制造方法,其包含有下列步骤:
步骤A:图4A所示,提供该基板且定义出该光发射区及该光接收区,并分别提供该光发射芯片及该光接收芯片于该光发射区及该光接收区;
步骤B:图4B所示,提供焊线70以打线的方式将该基板20与该光发射芯片30及该光接收芯片40作电性连接;
步骤C:图4C所示,提供各该封装胶体40以模压方式形成且包覆该光发射芯片30及该光接收芯片40,其结构还可如图6A至图6H所示,在模压时同步提供一聚光单元51于单一该封装胶体50或各该封装胶体50上;
步骤D:图4D所示,提供至少一遮蔽件80于各该封装胶体50的表面,且可位于该光发射芯片30或该光接收芯片40的上方;
步骤E:图4E所示,形成该滤光层60于各该封装胶体50的表面,在该第一较佳实施例中,该滤光层60是以转印法、贴覆法、涂布法、喷涂法、镀膜法或溅镀法形成于各该封装胶体50的表面;以及
步骤F:图4F所示,移除该至少一遮蔽件80的步骤。
于本发明该第一较佳实施例中,该滤光层具有一光发射孔61及一光接收孔63,且该光发射孔61及该光接收孔63分别位于该光发射芯片30及该光接收芯片40的上方,而该光发射孔61及该光接收孔63的形状为圆形,但该光发射孔61及该光接收孔63的形状将不以此为限,其也可依优化设计的需求为方形或多边形等。值得一提的是,本发明的具滤光层的微型光学封装结构10的滤光层60也可如同图5A至图5D所揭露的形态呈现,如图5A所示,该滤光层60同时具有该光发射孔61以及该光接收孔63,而该光发射孔61及该光接收孔63则分别位于该光发射芯片30及该光接收芯片40的上方;又如图5B、图5C所示,该滤光层60仅于该光发射芯片30或该光接收芯片40的一侧具有该光发射孔61或该光接收孔63;或如图5D所示,该滤光层60并不具有任何该光发射孔61及该光接收孔63,由此以提供特定波长滤除的功效。
请再参阅图6A至图6H所示,本发明的具滤光层的微型光学封装结构10的各封装胶体50具有该聚光单元51,而该聚光单元51的结构为凸透镜或凹透镜,如图6A、图6B所示,凸透镜结构的聚光单元51仅形成于该光接收芯片40一侧的封装胶体50,或仅形成于该光发射芯片30一侧的封装胶体50;如图6C、图6F所示,凸透镜或凹透镜结构的聚光单元51分别形成于各该封装胶体50上;如图6D、图6E所示,凹透镜结构的聚光单元51仅形成于该光接收芯片40一侧的封装胶体50,或仅形成于该光发射芯片30一侧的封装胶体50;或如图6G、图6H所示,一凸透镜及一凹透镜结构的聚光单元51各别形成于各该封装胶体50上,由此,本发明透过不同结构及形态的聚光单元51形成于各该封装胶体50上,使得该光发射芯片及该光接收芯片的效率能达到优化。
除前述该第一较佳实施例的光学封装结构10外,本发明的具滤光层的微型光学封装结构10’、10″也可为图7及图8的态样,即为本发明的第二较佳实施例及第三较佳实施例,如图7所示,该第二较佳实施例的具滤光层的微型光学封装结构10’与前述该第一较佳实施例的差异在于此光学封装结构10’仅具有光发射的功用,其包含该基板20、该光发射芯片30、该封装胶体50以及该滤光层60,而该光发射芯片30设于该基板20的光发射区21上,该封装胶体50形成于该光发射区21且包覆该光发射芯片30,以及该滤光层60形成于该封装胶体50的表面,以供过滤不同波长的光源,在图7的结构中,该滤光层60于该光发射芯片30的上方具有该光发射孔61,由此,未被该滤光层60所滤除的光源仅会由该光发射孔61传递出去。如图8所示,该第三较佳实施例与该第一较佳实施例的差异在于此光学封装结构10″仅具有光接收的功用,其包含有该基板20、该光接收芯片40、该封装胶体50以及该滤光层60,而该光接收芯片40设于该基板20的光接收区23,该封装胶体形成于该光接收区23且包覆该光接收芯片40,以及该滤光层60形成于该封装胶体50的表面,以供过滤不同波长的光源,在图8的结构中,该滤光层60于该光发射芯片30的上方具有该光接收孔63,由此,外在环境所产生的光源或不需要被接收的光源将会被该滤光层60所滤除,仅能经由该光接收孔63而传递至该光接收芯片40,以减低外在噪声的干扰。
总括来说,本发明的具滤光层的微型光学封装结构10及其制造方法不需于各该封装胶体50之间及外部设置阻隔件及保护盖,即可阻隔该光发射芯片30的散射或绕射光源传递至该光接收芯片40,用以避免光线干扰并达成结构薄型化及微小化的功效,此外,本发明的滤光层60形成于各该封装胶体50的表面,故不需要额外在光发射孔61及光接收孔63上增设滤光片即具有过滤特定波长的可见光的功效。
本发明于前揭露实施例中所揭露的构成元件,仅为举例说明,并非用来限制本发明的范围,其他等效元件的替代或变化,亦应为本发明的权利要求范围所涵盖。
Claims (17)
1.一种具滤光层的微型光学封装结构,其特征在于,包含有:
一基板,具有一光发射区及一光接收区;
一光发射芯片,设于该光发射区;
一光接收芯片,设于该光接收区;
二封装胶体,分别包覆该光发射芯片及该光接收芯片,且彼此呈一间隔地设于该光发射区及该光接收区;以及
一滤光层,形成于各该封装胶体的表面,以供过滤不同波长的光源。
2.根据权利要求1所述的具滤光层的微型光学封装结构,其特征在于,该滤光层具有一光发射孔及一光接收孔,且该光发射孔及该光接收孔分别位于该光发射芯片及该光接收芯片的上方。
3.根据权利要求2所述的具滤光层的微型光学封装结构,其特征在于,该光发射孔及该光接收孔的形状为圆形、方形或多边形。
4.根据权利要求1所述的具滤光层的微型光学封装结构,其特征在于,各该封装胶体可单一或全部具有一聚光单元。
5.根据权利要求1所述的具滤光层的微型光学封装结构,其特征在于,该滤光层具有一光发射孔,且该光发射孔位于该光发射芯片的上方。
6.根据权利要求1所述的具滤光层的微型光学封装结构,其特征在于,该滤光层具有一光接收孔,且该光接收孔位于该光接收芯片的上方。
7.一种具滤光层的微型光学封装结构,其特征在于,包含有:
一基板,具有一光发射区;
一光发射芯片,设于该光发射区;
一封装胶体,形成于该光发射区且包覆该光发射芯片;以及
一滤光层,形成于该封装胶体的表面,以供过滤不同波长的光源。
8.根据权利要求7所述的具滤光层的微型光学封装结构,其特征在于,该滤光层具有一光发射孔,且该光发射孔位于该光发射芯片的上方。
9.一种具滤光层的微型光学封装结构,其特征在于,包含有:
一基板,具有一光接收区;
一光接收芯片,设于该光接收区;
一封装胶体,形成于该光接收区且包覆该光接收芯片;以及
一滤光层,形成于该封装胶体的表面,以供过滤不同波长的光源。
10.根据权利要求9所述的具滤光层的微型光学封装结构,其特征在于,该滤光层具有一光接收孔,且该光接收孔位于该光接收芯片的上方。
11.根据权利要求2、8或10所述的具滤光层的微型光学封装结构,其特征在于,该滤光层为导电材质。
12.根据权利要求2、8或10所述的具滤光层的微型光学封装结构,其特征在于,该滤光层为不透光材质。
13.如权利要求1所述的具滤光层的微型光学封装结构的制造方法,其特征在于,包含有下列步骤:
提供该基板且定义出该光发射区及该光接收区;
分别提供该光发射芯片及该光接收芯片于该光发射区及该光接收区;
提供各该封装胶体且包覆该光发射芯片及该光接收芯片;以及
形成该滤光层于各该封装胶体的表面。
14.根据权利要求13所述的具滤光层的微型光学封装结构的制造方法,其特征在于,还包含有提供至少一遮蔽件于各该封装胶体的表面,且可位于该光发射芯片或该光接收芯片的上方,待形成该滤光层后移除该至少一遮蔽件的步骤。
15.根据权利要求13所述的具滤光层的微型光学封装结构的制造方法,其特征在于,还包含有同步提供一聚光单元于单一该封装胶体或各该封装胶体的步骤。
16.根据权利要求13所述的具滤光层的微型光学封装结构的制造方法,其特征在于,该滤光层是以转印法、贴覆法、涂布法、喷涂法、镀膜法或溅镀法形成于各该封装胶体的表面。
17.根据权利要求13所述的具滤光层的微型光学封装结构的制造方法,其特征在于,各该封装胶体是以模压制程形成且包覆于该发光芯片及该光接收芯片。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW102148863 | 2013-12-27 | ||
TW102148863A TWI651840B (zh) | 2013-12-27 | 2013-12-27 | 具濾光層之微型光學封裝結構及其製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104752416A true CN104752416A (zh) | 2015-07-01 |
CN104752416B CN104752416B (zh) | 2018-09-18 |
Family
ID=53482828
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410165506.8A Active CN104752416B (zh) | 2013-12-27 | 2014-04-23 | 具滤光层的微型光学封装结构及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9312402B2 (zh) |
CN (1) | CN104752416B (zh) |
TW (1) | TWI651840B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105300431A (zh) * | 2015-11-10 | 2016-02-03 | 广东欧珀移动通信有限公司 | 激光对焦传感器保护构件 |
CN107871789A (zh) * | 2017-12-13 | 2018-04-03 | 刘向宁 | 收发一体式光电转换器 |
CN108198870A (zh) * | 2018-01-09 | 2018-06-22 | 彭素珍 | 一种光探测器 |
CN110289216A (zh) * | 2019-07-01 | 2019-09-27 | 济南南知信息科技有限公司 | 一种随钻定向传感器及其制造方法 |
CN111755557A (zh) * | 2020-06-18 | 2020-10-09 | 深圳市兴邦维科科技有限公司 | 一种接近传感器整合型封装结构 |
CN113451437A (zh) * | 2020-03-25 | 2021-09-28 | 昇佳电子股份有限公司 | 光传感器封装结构及其封装方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10170658B2 (en) * | 2015-11-13 | 2019-01-01 | Advanced Semiconductor Engineering, Inc. | Semiconductor package structures and method of manufacturing the same |
KR20170115425A (ko) * | 2016-04-07 | 2017-10-17 | 크루셜텍 (주) | 거리 측정 센서 조립체 및 그를 갖는 전자기기 |
US10734540B1 (en) * | 2019-07-03 | 2020-08-04 | Advanced Semiconductor Engineering, Inc. | Optical device and method for manufacturing the same |
US11828877B2 (en) | 2019-09-12 | 2023-11-28 | Stmicroelectronics Pte Ltd | Optical sensor package with encapsulant is between and separates substrates and multiple assemblies |
CN112992698B (zh) * | 2019-12-02 | 2024-07-19 | 光宝科技新加坡私人有限公司 | 光学模块的制造方法 |
TWI761737B (zh) * | 2019-12-02 | 2022-04-21 | 新加坡商光寶科技新加坡私人有限公司 | 光學模組的製造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100181578A1 (en) * | 2009-01-21 | 2010-07-22 | Pixart Imaging Inc. | Package structure |
CN202275832U (zh) * | 2011-09-27 | 2012-06-13 | 菱生精密工业股份有限公司 | 光学模块封装结构 |
US20130240717A1 (en) * | 2012-03-15 | 2013-09-19 | Alpine Electronics, Inc. | Optical sensor |
CN203950805U (zh) * | 2013-12-27 | 2014-11-19 | 菱生精密工业股份有限公司 | 具滤光层的微型光学封装结构 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4180088B2 (ja) * | 2006-06-09 | 2008-11-12 | シャープ株式会社 | 光結合素子および電子機器 |
US8704254B2 (en) * | 2006-12-22 | 2014-04-22 | Philips Lumileds Lighting Company, Llc | Light emitting device including a filter |
EP1986238A3 (en) * | 2007-04-27 | 2010-12-29 | Semiconductor Energy Laboratory Co., Ltd. | Resin molded optical semiconductor device and corresponding fabrication method |
KR20140080812A (ko) * | 2012-12-18 | 2014-07-01 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
-
2013
- 2013-12-27 TW TW102148863A patent/TWI651840B/zh active
-
2014
- 2014-02-03 US US14/171,328 patent/US9312402B2/en active Active
- 2014-04-23 CN CN201410165506.8A patent/CN104752416B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100181578A1 (en) * | 2009-01-21 | 2010-07-22 | Pixart Imaging Inc. | Package structure |
CN202275832U (zh) * | 2011-09-27 | 2012-06-13 | 菱生精密工业股份有限公司 | 光学模块封装结构 |
US20130240717A1 (en) * | 2012-03-15 | 2013-09-19 | Alpine Electronics, Inc. | Optical sensor |
CN203950805U (zh) * | 2013-12-27 | 2014-11-19 | 菱生精密工业股份有限公司 | 具滤光层的微型光学封装结构 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105300431A (zh) * | 2015-11-10 | 2016-02-03 | 广东欧珀移动通信有限公司 | 激光对焦传感器保护构件 |
CN105300431B (zh) * | 2015-11-10 | 2017-06-27 | 广东欧珀移动通信有限公司 | 激光对焦传感器保护构件 |
CN107871789A (zh) * | 2017-12-13 | 2018-04-03 | 刘向宁 | 收发一体式光电转换器 |
CN108198870A (zh) * | 2018-01-09 | 2018-06-22 | 彭素珍 | 一种光探测器 |
CN110289216A (zh) * | 2019-07-01 | 2019-09-27 | 济南南知信息科技有限公司 | 一种随钻定向传感器及其制造方法 |
CN113451437A (zh) * | 2020-03-25 | 2021-09-28 | 昇佳电子股份有限公司 | 光传感器封装结构及其封装方法 |
CN111755557A (zh) * | 2020-06-18 | 2020-10-09 | 深圳市兴邦维科科技有限公司 | 一种接近传感器整合型封装结构 |
Also Published As
Publication number | Publication date |
---|---|
TWI651840B (zh) | 2019-02-21 |
CN104752416B (zh) | 2018-09-18 |
US9312402B2 (en) | 2016-04-12 |
TW201526212A (zh) | 2015-07-01 |
US20150187963A1 (en) | 2015-07-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104752416A (zh) | 具滤光层的微型光学封装结构及其制造方法 | |
US11562992B2 (en) | Image module package having glass filter secured by transparent adhesive | |
CN104332524B (zh) | 电子装置、光学模块及其制造方法 | |
JP6062349B2 (ja) | 光学モジュール、およびその製造方法 | |
CN105340087B (zh) | 用于制造光电子器件的方法 | |
TW201619576A (zh) | 光學模組、其製造方法及電子裝置 | |
TWI527166B (zh) | The package structure of the optical module | |
JP2017168819A (ja) | 非対称放射パターンを有する発光素子およびその製造方法 | |
US11156796B2 (en) | Optical sensor package module | |
TW201537721A (zh) | 整合型光學模組的封裝結構 | |
TWI521671B (zh) | The package structure of the optical module | |
US20150330772A1 (en) | Proximity Sensor Having a Daughterboard-Mounted Light Detector | |
CN210488570U (zh) | 准直结构、指纹识别组件及电子设备 | |
TW201640644A (zh) | 光學感應裝置及光學裝置的製造方法 | |
CN203950805U (zh) | 具滤光层的微型光学封装结构 | |
CN103383469B (zh) | 用于光幕的透镜架和光学模块及加工方法 | |
CN105870070B (zh) | 一种光学传感器封装结构及其集成板 | |
CN107423691A (zh) | 一种指纹传感器、电子设备以及指纹传感器制造方法 | |
JP2015026799A (ja) | 光学モジュール、及びその製造方法 | |
CN116266562A (zh) | 光学感测模块及其封装方法 | |
CN107924971B (zh) | 光电子组件和用于制造光电子组件的方法 | |
TWM485399U (zh) | 整合型光學模組的封裝結構 | |
CN104425477A (zh) | 光学传感器封装装置 | |
JP2008021625A (ja) | 光遮断器の構造及び製造方法 | |
CN107527002B (zh) | 电容式指纹识别模块 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |