CN113451437A - 光传感器封装结构及其封装方法 - Google Patents

光传感器封装结构及其封装方法 Download PDF

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CN113451437A
CN113451437A CN202110322282.7A CN202110322282A CN113451437A CN 113451437 A CN113451437 A CN 113451437A CN 202110322282 A CN202110322282 A CN 202110322282A CN 113451437 A CN113451437 A CN 113451437A
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邹文杰
张夷华
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Sensorteknik Technology Corp
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Abstract

本发明公开了一种光传感器封装结构及其封装方法，其中该光传感器封装结构包含一基板，于一发光元件及一感光元件之间设置一导通孔；及一盖体，覆盖于该基板，该盖体包含一遮挡部及一延伸部，该遮挡部设置于该发光元件和该感光元件之间，该遮挡部朝向该基板的表面设置一金属接面，该延伸部设置一金属侧壁，该金属侧壁连接于该金属接面。该导通孔覆盖一导电胶，该金属接面接触该导电胶。藉此，本发明的光传感器封装结构及其封装方法可缩小光传感器的体积、提供稳固封装、降低封装成本并提升产品可靠度。

Description

光传感器封装结构及其封装方法
技术领域
本发明关于一种光传感器封装结构及其封装方法，尤其是可遮挡电磁干扰的光传感器封装结构及其封装方法。
背景技术
透过光感应技术(light sensing technology)所实现的光传感器广泛使用于许多应用之中，举例来说，环境光传感器(ambient light sensor，ALS)可应用于电子产品中以感测环境光的强度，并且自动调整显示屏幕的亮度，以提升使用便利性并延长电池使用时间；近接传感器(proximity sensor)可用来侦测用户的脸部与电子装置的显示屏幕之间的距离。藉此，当近接传感器靠近使用者的脸部时，电子装置即可自动地关闭显示屏幕并关闭触控功能，以避免用户的脸部于通话中误触显示屏幕而中断对话。
近接传感器及环境光线传感器一般会整合于单一封装结构中，以便应用于移动电话等体积较小的可携带式电子装置内。近接传感器和环境光线传感器都需使用感光元件，而且近接传感器一般还需要使用发光元件(例如红外线发射器)。为了避免发光元件产生的光线干扰感光元件，传统方式会让感光元件与发光元件之间维持一段距离，以避免串扰(crosstalk)。然而，此方式会占据电子装置较大的空间，也会损耗较多的能量。在空间有限的情况下，避免串扰的方式是在发光元件和感光元件之间设置遮挡组件，一般是在芯片封装制程中加入遮挡组件。
然而除了发光元件所产生的光线干扰，因电磁感应效应所产生的电磁波也会对光传感器设备造成电磁干扰(Electromagnetic Interference,EMI)，进而形成噪声影响光传感器的准确度。先前遮挡电磁干扰的技术将一金属盖覆盖于光传感器组件上。此种方式是仰赖额外设置于光传感器件上的金属盖来屏蔽电磁干扰，然而金属盖体积大、占空间且不易固定于光传感器封装结构，容易发生掉落问题。并且，将金属盖固定于光传感器需单颗作业，无法进行连片作业，成本也较高，使得现有可遮挡电磁干扰的光传感器在成本密集的消费性电子产品市场接受度偏低。
在电子产品持续朝向微型化、低功耗发展的情况下，亟需提供一种进一步改良的光传感器封装结构及其封装方法，以在缩小光传感器封装结构体积的同时，提供屏蔽EMI干扰讯号的功能，进而提升光传感器的实用性。
发明内容
本发明的目的，在于提供一种光传感器封装结构及其封装方法，其藉由于一发光元件及一感光元件之间设置一导通孔，并于该导通孔覆盖一导电胶，使一盖体上的金属接通过接触该导电胶而形成稳定回路。藉此，本发明的光传感器封装结构及其封装方法可缩小光传感器的体积、提供稳固封装、降低封装成本并提升产品可靠度。。
本发明关于一种光传感器封装结构，其包含一基板、一发光元件、一感光元件及一盖体。该基板设有一导通孔。该发光元件及感光元件分别设置于该基板且位于该导通孔的两侧。该盖体覆盖于该基板，该盖体包含一遮挡部及一延伸部，该遮挡部设置于该发光元件和该感光元件之间，并且朝该基板延伸，该延伸部连接该遮挡部并围绕该发光元件或该感光元件。其中，该遮挡部朝向该基板的表面设置一金属接面，该延伸部设置一金属侧壁，该金属侧壁连接于该金属接面；且该导通孔于该基板朝向该盖体的表面上覆盖一导电胶，该金属接面接触该导电胶。
本发明关于一种光传感器封装结构的封装方法，其包含：于一基板上设置一发光元件和一感光元件，在该基板的发光元件及感光元件之间装配一个或以上的导通孔；于导通孔覆盖一导电胶；不透明材质制作一盖体，盖体包含一遮挡部及连接该遮挡部的一延伸部，该延伸部与该遮挡部构成一容置空间；于该遮挡部远离该延伸部的一表面电镀形成一金属接面，并且于该盖体朝向该容置空间的表面电镀形成一金属侧壁，该金属侧壁连接于该金属接面；及将该盖体与该基板，使该金属接面接触该导电胶，该容置空间供容纳该发光元件或该感光元件。
附图说明
图1：其为本发明光传感器封装结构一实施例的剖视示意图；
图2：其为本发明光传感器封装结构一实施例的局部剖视外观示意图；
图3：其为本发明光传感器封装结构的封装方法一实施例于基板配置组件的示意图；
图4：其为本发明光传感器封装结构的封装方法一实施例以透明材料封装包覆该发光元件及感光元件的示意图；
图5：其为本发明光传感器封装结构的封装方法一实施例形成透明模塑物质并使导通孔裸露于该板的表面的示意图；
图6：其为本发明光传感器封装结构的封装方法一实施例于导通孔覆盖导电胶的示意图；
图7：其为本发明光传感器封装结构的封装方法一实施例制作盖体并形成金属接面及金属侧壁的示意图；
图8：其为本发明光传感器封装结构的封装方法一实施例将盖体与基板接合后的示意图。
【图号对照说明】
10 基板
20 发光元件
21 导线
30 感光元件
31 导线
40 透明模塑物质
42 透明模塑物质
50 盖体
51 遮挡部
52 金属接面
53 延伸部
54 金属侧壁
55 延伸部
56 金属侧壁
60 导通孔
62 导电胶
A 透明材料
C1 第一容置空间
C2 第二容置空间
具体实施方式
为了使本发明的结构特征及所达成的功效有更进一步的了解与认识，特用较佳的实施例及配合详细的说明，说明如下：
在说明书及权利要求当中使用了某些词汇指称特定的组件，然，所属本发明技术领域中具有通常知识者应可理解，制造商可能会用不同的名词称呼同一个组件，而且，本说明书及权利要求并不以名称的差异作为区分组件的方式，而是以组件在整体技术上的差异作为区分的准则。在通篇说明书及权利要求当中所提及的「包含」为一开放式用语，故应解释成「包含但不限定于」。再者，「耦接」一词在此包含直接及间接的连接手段。因此，若文中描述一第一装置耦接一第二装置，则代表第一装置可直接连接第二装置，或可透过其他装置或其他连接手段间接地连接至第二装置。
请参阅第1及2图，图1为本发明光传感器封装结构一实施例的剖视示意图，图2为该光传感器封装结构实施例的局部剖视外观示意图。光传感器封装结构包含一基板10、一发光元件20、一感光元件30、透明模塑物质40、42和一盖体50。
发光元件20及感光元件30设置于基板10上，其中发光元件20可以透过导线21连接到基板10，且感光元件30可以透过导线31连接到基板10。惟，除了传统打线制程外，发光元件20或感光元件330也可以透过其它方式连接到基板10，本发明并不以此为限。于一实施例中，基板10可为一铜箔基板、一陶瓷基板、一导线支架、一树酯基板或一印刷电路板，而导线21、31则可以为金线、铜线，但不限于此。
于本实施例中，光传感器封装结构可以整合有一近接传感器及/或一环境光线传感器。发光元件20用来产生发射光(例如红外光)，而感光元件30用来接收发射光照射物体后的反射光，让近接传感器可根据发射光和反射光来进行距离估算。此外，感光元件30也可用来接收环境光源产生的环境光，以供环境光线传感器进行亮度(light intensity)估算。在本实施例中，近接传感器和环境光线传感器的运算电路和感光元件30设置在同一区域，而发光元件20与该区域相距一距离。于一实施例中，近接传感器和环境光线传感器各自使用独立的感光元件，故存在复数个感光元件30。
发光元件20和导线21密封于透明模塑物质40中，感光元件30和导线31密封于透明模塑物质42中，透明模塑物质40、42可用来保护发光元件20和感光元件30。该盖体50较佳为由不透明塑料制成，且该盖体50覆盖于基板10以阻挡非预期的光线进入光传感器封装结构，该盖体50会对应该发光元件20和感光元件30的出入光位置分别设置开口以供发射光和反射光通过。其中，该盖体50包含一遮挡部51，该遮挡部51设置于该发光元件20和感光元件30之间，并且朝该基板10延伸，以避免发光元件20产生的光线干扰感光元件30而形成串扰。该盖体50另包含连接该遮挡部51的至少一延伸部53、55，在本实施例中，该盖体50的一延伸部53由该遮挡部51朝图面右侧延伸并围绕该发光元件20；且该盖体50的另一延伸部55由该遮挡部51朝图面左侧延伸并围绕该感光元件30。
值得注意的是，该盖体50的遮挡部51朝向该基板10的表面电镀一金属接面52，且该盖体50电镀至少一金属侧壁54、56，该至少一金属侧壁54、56连接于该金属接面52，在本实施例中，该盖体50的一金属侧壁54设置于该遮挡部51及该延伸部53朝向该发光元件20的表面上，以连接于该金属接面52并遮蔽该发光元件20；且该盖体50的另一金属侧壁56设置于该遮挡部51及该延伸部55朝向该感光元件30的表面上，以连接于该金属接面52并遮蔽该感光元件30。如前所述，该盖体50较佳由不透明塑料制成，故该金属接面52及金属侧壁54、56可由塑料电镀方式形成。
该基板10设有至少一导通孔(VIA)60，该导通孔60可以为贯通该基板10两侧表面的贯孔，或者为裸露于该基板10朝向该盖体50的表面的盲孔。该导通孔60较佳需接地。此外，该导通孔60于该基板10朝向该盖体50的表面上覆盖一导电胶62，该导电胶62可以为导电银胶或其他导电胶材。该盖体50的遮挡部51朝向该基板10的表面设有该金属接面52，该金属接面52接触该导电胶62而与该导通孔60电性连接。
藉此，该盖体50的金属接面52及金属侧壁54、56可形成一金属屏蔽，并且通过该金属接面52、该导电胶62与该导通孔60电性连接形成回路，以共同构成一稳定的接地结构，故本实施例的光传感器封装结构可透过该金属接面52及金属侧壁54、56有效遮挡EMI，以阻挡干扰的传播。其中，该金属侧壁54、56的范围越大，则遮蔽该发光元件20或感光元件30的效果越佳，可获取较佳的遮挡EMI效果。然其可能会增加制成复杂度及材料成本，实际应视实施本发明实施例的使用者需求取舍而设计。
以下对本发明光传感器封装结构前述实施例的封装方法进行详细说明。请参照图3所示，一基板10上设有发光元件20及感光元件30，在该基板10的发光元件20及感光元件30之间装配一个或以上的导通孔60，且该导通孔60接地。
请参照第4及5图所示，于该基板10施以模封制程以形成透明模塑物质40、42，将发光元件20密封于透明模塑物质40中，将感光元件30密封于透明模塑物质42中，并且使该导通孔60裸露于该基板10的表面。如图4所示，在本实施例中以一透明材料A直接封装包覆该发光元件20及感光元件30。后续如图5所示，再透过切割、研磨、蚀刻等方式去除部分透明材料A，以形成透明模塑物质40、42并使导通孔60裸露于该基板10的表面。然而，在本发明部分实施例中，也可以透过将一模具覆盖于基板10的导通孔60，再将液态透明胶材(例如树酯)注入模具，待凝固后直接形成透明模塑物质40、42，并移除模具即可使导通孔60裸露于该基板10的表面。
请参照图6所示，于导通孔60覆盖一导电胶62。该导电胶62可以为导电银胶或其他导电胶材。
请参照图7，以不透明材质制作一盖体50，该盖体50包含一遮挡部51及连接该遮挡部51的至少一延伸部53、55，在本实施例中，该盖体50的一延伸部53由该遮挡部51朝图面右侧延伸，并与该遮挡部5构成一第一容置空间C1；且该盖体50的另一延伸部55由该遮挡部51朝图面左侧延伸并与该遮挡部51构成一第二容置空间C2。于该遮挡部51远离该延伸部53、55的一表面电镀形成一金属接面52，并且于该盖体50朝向该第一容置空间C1或该第二容置空间C2的表面电镀形成一金属侧壁54、56。在本实施例中，该盖体50朝向该第一容置空间C1的表面形成一金属侧壁54，该金属侧壁54设置于该遮挡部51及该延伸部53，以连接于该金属接面52并遮蔽该第一容置空间C1；且该盖体50朝向该第二容置空间C2的表面形成另一金属侧壁56，该金属侧壁56设置于该遮挡部51及该延伸部55，以连接于该金属接面52并遮蔽该第二容置空间C2。其中，该盖体50较佳由不透明塑料制成，故该金属接面52及金属侧壁54、56可由塑料电镀方式形成。
请参照图8，将该盖体50与该基板10接合，其中该第一容置空间C1可供容纳该透明模塑物质40及密封于其中的发光元件20，该第二容置空间C2可供容纳该透明模塑物质42及密封于其中的感光元件30。该盖体50的遮挡部51朝向该基板10的表面设有该金属接面52，该金属接面52接触该导电胶62而与该导通孔60电性连接。
通过本发明光传感器封装方法实施例来封装制作光传感器封装结构，不仅可提供一金属屏蔽来有效遮挡EMI，以阻挡干扰的传播，而且无须使用先前技术中的金属盖。反之如前所述，在本发明实施例中该盖体可由不透明塑料制成，故盖体具有较小的体积，符合电子产品微型化的需求。再者，塑料制成的盖体不若于金属盖盖不易固定于光传感器封装结构，容易发生掉落问题，由不透明塑料制成盖体可以轻易塑形，使其与基板形成稳固贴合而不易脱落。而且，不同于将金属盖固定于光传感器需单颗作业，将盖体与基板接合时可以连片作业，以大幅降低光传感器封装结构的生产成本。
更重要的是，本发明透过于导通孔覆盖一导电胶，可以确保该盖体的金属接面与该导通孔形成稳定的接地回路。相较之下，先前技术所采用的金属盖纵使未发生脱落问题，然其只要稍有组装偏差或位移就可能无法确实形成接地回路，而致使遮挡EMI的功能完全失效，通过本发明光传感器封装方法实施例来封装制作光传感器封装结构显然具有较佳的可靠度。
上文仅为本发明的较佳实施例而已，并非用来限定本发明实施的范围，凡依本发明权利要求范围所述的形状、构造、特征及精神所为的均等变化与修饰，均应包括于本发明的权利要求范围内。

Claims (15)

1.一种光传感器封装结构，其特征在于，其包含：
一基板，设有一导通孔；
一发光元件及一感光元件，分别设置于该基板且位于该导通孔的两侧；及
一盖体，覆盖于该基板，该盖体包含一遮挡部及一延伸部，该遮挡部设置于该发光元件和该感光元件之间，并且朝该基板延伸，该延伸部连接该遮挡部并围绕该发光元件或该感光元件；
其中，该遮挡部朝向该基板的表面设置一金属接面，该延伸部设置一金属侧壁，该金属侧壁连接于该金属接面；该导通孔于该基板朝向该盖体的表面上覆盖一导电胶，该金属接面接触该导电胶。
2.如权利要求1所述的光传感器封装结构，其特征在于，其中，该盖体由不透明塑料制成，该金属接面及该金属侧壁由塑料电镀方式形成。
3.如权利要求1所述的光传感器封装结构，其特征在于，其中，该导通孔接地，使该金属侧壁、金属接面、该导电胶与该导通孔电性连接形成接地回路。
4.如权利要求1所述的光传感器封装结构，其特征在于，其中，该发光元件密封于一透明模塑物质中，该感光元件密封于另一透明模塑物质中。
5.如权利要求1所述的光传感器封装结构，其特征在于，其中，该盖体对应该发光元件和感光元件的出入光位置分别设置开口。
6.如权利要求1所述的光传感器封装结构，其特征在于，其中该延伸部由该遮挡部延伸并围绕该感光元件，该金属侧壁遮蔽该感光元件。
7.如权利要求6所述的光传感器封装结构，其特征在于，其中该盖体包含另一延伸部，该延伸部连接该遮挡部并围绕该发光元件，该延伸部设置另一金属侧壁，该另一金属侧壁连接于该金属接面并遮蔽该发光元件。
8.一种光传感器封装方法，其特征在于，其包含：
于一基板上设置一发光元件和一感光元件，在该基板的发光元件及感光元件之间装配一个或以上的导通孔；
于导通孔覆盖一导电胶；
以不透明材质制作一盖体，盖体包含一遮挡部及连接该遮挡部的一延伸部，该延伸部与该遮挡部构成一容置空间；
于该遮挡部远离该延伸部的一表面电镀形成一金属接面，并且于该盖体朝向该容置空间的表面电镀形成一金属侧壁，该金属侧壁连接于该金属接面；及
将该盖体与该基板，使该金属接面接触该导电胶，该容置空间供容纳该发光元件或该感光元件。
9.如权利要求8所述的光传感器封装方法，其特征在于，其中以不透明塑料制作该盖体，该金属接面及该金属侧壁则由塑料电镀方式形成。
10.如权利要求8所述的光传感器封装方法，其特征在于，其中还包含将该导通孔接地，使该金属侧壁、金属接面、该导电胶与该导通孔电性连接形成接地回路。
11.如权利要求8所述的光传感器封装方法，其特征在于，其中于该基板设置该发光元件和该感光元件后，还包含将发光元件密封于一透明模塑物质中，将该感光元件密封于另一透明模塑物质中，并且使该导通孔裸露于该基板的表面。
12.如权利要求11所述的光传感器封装方法，其特征在于，其中以一透明材料包覆该发光元件及感光元件，再式去除部分该透明材料，以形成该二透明模塑物质并使该导通孔裸露于该基板的表面。
13.如权利要求11所述的光传感器封装方法，其特征在于，其中透过将一模具覆盖于基板的导通孔，再将液态透明胶材注入模具，待凝固后形成该二透明模塑物质，并移除该模具可使该导通孔裸露于该基板的表面。
14.如权利要求8所述的光传感器封装方法，其特征在于，其中该容置空间供容纳该感光元件，该金属侧壁遮蔽该感光元件。
15.如权利要求8所述的光传感器封装方法，其特征在于，其中该盖体包含连接该遮挡部的另一延伸部，该另一延伸部与该遮挡部构成另一容置空间，且还包含于该盖体朝向该另一容置空间的表面电镀形成另一金属侧壁，该另一金属侧壁连接于该金属接面，该另一容置空间供容纳该发光元件，该另一金属侧壁遮蔽该发光元件。
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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0846073A (ja) * 1994-07-28 1996-02-16 Mitsubishi Electric Corp 半導体装置
CN1965416A (zh) * 2004-06-03 2007-05-16 罗姆股份有限公司 光通信模块
JP2010021225A (ja) * 2008-07-09 2010-01-28 Sharp Corp 電子部品およびその製造方法、並びに、電子部品を備えた電子装置
TWM493748U (zh) * 2014-08-08 2015-01-11 Lingsen Precision Ind Ltd 具三明治結構的封蓋單元
CN104752416A (zh) * 2013-12-27 2015-07-01 菱生精密工业股份有限公司 具滤光层的微型光学封装结构及其制造方法
CN105448939A (zh) * 2014-08-06 2016-03-30 原相科技(槟城)有限公司 图像模块封装及其制作方法
US20160126403A1 (en) * 2014-10-31 2016-05-05 Lingsen Precision Industries, Ltd. Optical module package and its packaging method
US20190110697A1 (en) * 2016-04-04 2019-04-18 Kyocera Corporation Measurement sensor package and measurement sensor
CN109841597A (zh) * 2017-11-24 2019-06-04 讯芯电子科技（中山）有限公司 分区电磁屏蔽封装结构及制造方法
CN110010478A (zh) * 2018-10-10 2019-07-12 浙江集迈科微电子有限公司 一种具有电磁屏蔽功能的射频微系统及成型工艺

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8994154B2 (en) * 2012-10-01 2015-03-31 Texas Instruments Incorporated Proximity sensor having light blocking structure in leadframe
TWI502733B (zh) * 2012-11-02 2015-10-01 環旭電子股份有限公司 電子封裝模組及其製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0846073A (ja) * 1994-07-28 1996-02-16 Mitsubishi Electric Corp 半導体装置
CN1965416A (zh) * 2004-06-03 2007-05-16 罗姆股份有限公司 光通信模块
JP2010021225A (ja) * 2008-07-09 2010-01-28 Sharp Corp 電子部品およびその製造方法、並びに、電子部品を備えた電子装置
CN104752416A (zh) * 2013-12-27 2015-07-01 菱生精密工业股份有限公司 具滤光层的微型光学封装结构及其制造方法
CN105448939A (zh) * 2014-08-06 2016-03-30 原相科技(槟城)有限公司 图像模块封装及其制作方法
TWM493748U (zh) * 2014-08-08 2015-01-11 Lingsen Precision Ind Ltd 具三明治結構的封蓋單元
US20160126403A1 (en) * 2014-10-31 2016-05-05 Lingsen Precision Industries, Ltd. Optical module package and its packaging method
US20190110697A1 (en) * 2016-04-04 2019-04-18 Kyocera Corporation Measurement sensor package and measurement sensor
CN109841597A (zh) * 2017-11-24 2019-06-04 讯芯电子科技（中山）有限公司 分区电磁屏蔽封装结构及制造方法
CN110010478A (zh) * 2018-10-10 2019-07-12 浙江集迈科微电子有限公司 一种具有电磁屏蔽功能的射频微系统及成型工艺

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