TWI521671B - The package structure of the optical module - Google Patents

The package structure of the optical module Download PDF

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TWI521671B
TWI521671B TW102126694A TW102126694A TWI521671B TW I521671 B TWI521671 B TW I521671B TW 102126694 A TW102126694 A TW 102126694A TW 102126694 A TW102126694 A TW 102126694A TW I521671 B TWI521671 B TW I521671B
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Taiwan
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substrate
light emitting
optical module
light
light receiving
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TW102126694A
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TW201505156A (zh
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Ming-De Du
You-Chen Lin
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Priority to US14/072,267 priority patent/US9705025B2/en
Priority to JP2013235049A priority patent/JP2015026803A/ja
Publication of TW201505156A publication Critical patent/TW201505156A/zh
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    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
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    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71

Description

光學模組的封裝結構
本發明係與封裝結構有關，特別是指一種光學模組的封裝結構。
目前近接光學感測模組儼然已成為新一代智慧型電子裝置(例如智慧型手機)的主流技術選擇，當該電子裝置貼近耳朵(臉部偵測)或者放置於口袋中時，該模組將立即關閉螢幕顯示以節省耗電並避免意外的碰觸，以帶來更佳的使用體驗，而該模組之作動原理係利用一光發射晶片發射(例如發光二極體LED)一光源，該光源經由物體表面之反射而投射至一光接收晶片，再轉換成電子訊號進行後續處理。
如台灣第M428490號專利案之光學模組封裝單元，該案之封裝結構包含有一基板、一光發射晶片、一光接收晶片、一封蓋以及二封裝膠體，各該晶片分別設置於一基板上，而具有一光發射孔及一光接收孔之該封蓋固設於該基板上，且分別對應罩蓋於該光發射晶片與該光接收晶片各自形成一腔室，各該封裝膠體分別貫注於各該腔室內，以包覆各該晶片，藉以達成上述之目的。
然而，該案光學模組之內部元件主要僅包含該光發射晶片及該光接收晶片，故必須另外搭載其他具功能性之模組或其相關之被動元件方能作用，如此一來導致整體光學元件之結構體積增加以及組裝成本提高。
綜上所陳，習用之光學模組具有上述之缺失而有待改進。
本發明之主要目的在於提供一種光學模組的封裝結構，其可有效縮小整體結構之體積以及降低封裝之成本。
為了達成上述之目的，本發明之光學模組的封裝結構包含有一基板、一光接收晶片、一光發射晶片、一電子單元、二封裝膠體以及一封蓋，該基板定義出一光接收區及一光發射區；該光接收晶片設於該基板之光接收區；該光發射晶片設於該基板之光發射區；該電子單元位於該基板上且電性連接於該光發射晶片；各該封裝膠體分別包覆於該光接收晶片、該光發射晶片及該電子單元；以及該封蓋設置於該基板之上，且具有一光發射孔及一光接收孔，該光發射孔及該光接收孔分別位於該光發射晶片及該光接收晶片之上方。
其中各該封裝膠體及該封蓋分別為透光及不透光之樹脂。
其中該封蓋具有第一容置空間及第二容置空間，該第一、第二容置空間分別與該光接收孔及該光發射孔相互連通。
其中該光接收晶片及該光發射晶片分別容置於該第一、第二容置空間內。
其中該基板為有機材質之雙馬來醯亞胺三嗪(Bismaleimide Triazine)基板等非陶瓷基板。
本發明另提供一種光學模組的封裝方法，該方法 包含有下列步驟：(a)於基板上定義出該發射區及該接收區；(b)將該電子單元電性連接於基板上；(c)將該光接收晶片及該光發射晶片分別電性連接於該基板之接收區及發射區；(d)將該不透光之封蓋設置於該基板之上；以及(e)形成該可透光之封裝膠體於各該晶片及該電子單元。
其中該電子單元與該基板之設置方法係利用表面黏著技術(Surface Mount Technology)。
其中該電子單元與該光發射晶片之電性連接關係可為串聯或並聯。
其中各該晶片與該基板之電性連接方法係為打線製程(Wire Bond)及接合製程(Die Attach)。
其中更包含有一步驟(f)，係將該步驟(a)至步驟(d)所製成之該光學模組進行切割或衝切。
藉此，本發明之光學模組的封裝結構將該電子單元(如被動元件、具功能性IC或裸晶片)整合於同一封裝結構內，並透過該電子單元與該光發射晶片之電性連接設計，使本發明之光學模組不須另外搭配其他模組即具電流限流或功能性調整之功能，故本發明相較於先前技術不僅能減少組裝與封裝之工序，更能縮小整體結構之體積以及降低封裝之成本。
為使 貴審查委員能進一步了解本發明之構成、 特徵及其目的，以下乃舉本發明之若干實施例，並配合圖式詳細說明如後，同時讓熟悉該技術領域者能夠具體實施，惟以下所述者，僅係為了說明本發明之技術內容及特徵而提供之一實施方式，凡為本發明領域中具有一般通常知識者，於了解本發明之技術內容及特徵之後，以不違背本發明之精神下，所為之種種簡單之修飾、替換或構件之減省，皆應屬於本發明意圖保護之範疇。
10‧‧‧光學模組封裝結構
20‧‧‧基板
22‧‧‧光接收區
24‧‧‧光發射區
30‧‧‧光接收晶片
40‧‧‧光發射晶片
50‧‧‧電子單元
60‧‧‧封裝膠體
70‧‧‧封蓋
72‧‧‧光接收孔
74‧‧‧光發射孔
76‧‧‧第一容置空間
78‧‧‧第二容置空間
第1圖為本發明一較佳實施例所提供之俯視圖。
第2圖為本發明該較佳實施例所提供之剖視圖，其為第1圖沿2-2剖線。
第3圖為本發明該較佳實施例所提供之封裝流程示意圖。
為了詳細說明本發明之結構、特徵及功效所在，茲列舉一較佳實施例並配合下列圖式說明如後，其中：請先參閱第1圖至第2圖所示，本發明一較佳實施例所提供之光學模組的封裝結構10，係切割取自於一般封裝陣列(Array)之一模組，包含有一基板20、一光接收晶片30、一光發射晶片40、一電子單元50、二封裝膠體60以及一封蓋70。
該基板20於本較佳實施例係以有機材質之雙馬來醯亞胺三嗪(Bismaleimide Triazine，通稱BT)基板或玻璃纖維板(通稱FR4)等非陶瓷基板，藉此，該基板20之材料成本 較低，且於該基板20之表面定義出一光接收區22及一光發射區24；該光接收晶片30及該光發射晶片40分別經接合(Die Attach)及打線(Wire Bond)製程而設於該基板20之光接收區22以及光發射區24中，其中該光發射晶片40用以發射光源，該光接收晶片30則用以接收由該光發射晶片40所發射出之光源；該電子單元50係利用表面黏著技術(Surface Mount Technology)設置於該基板20上，並且以串聯或並聯之方式電性連接該光發射晶片40，以供該光發射晶片40具有電流限流或具功能調整之效果；各該封裝膠體60之材質為透光之樹脂，例如透明的環氧樹脂(Epoxy Resin)為例，各該封裝膠體60係分別包覆於該光接收晶片30及該光發射晶片40，各該封裝膠體60分別於該光發射晶片40及該光接收晶片30之上方；以及該封蓋70，為一體成型且材質為不透光之樹脂，例如不透光之環氧樹脂(Epoxy Resin)為例，該封蓋70係設置於該基板20與各該封裝膠體60之上，且該封蓋70具有一光接收孔72、一光發射孔74，以及分別與該光接收孔72、該光發射孔74相互連通之一第一容置空間76、一第二容置空間78，該光接收孔72及該光發射孔74分別位於該光接收晶片30及該光發射晶片40之上方，且該光接收晶片30及該光發射晶片40可分別容置於該第一容置空間76及該第二容置空間78之內。
請再參閱第3圖A至E所示，本發明之光學模組封裝流程，第一步驟A係於每一陣列基板(Substrate array)之單一基板20上定義出該光接收區22以及該光發射區24；第二步驟B接著將該電子元件利用表面黏著技術(Surface Mount Technology)設置於該基板20上；第三步驟C為該光接收晶片30及該光發射晶片40分別利用接合(Die Attach)及打線(Wire Bond)製程而設置於該基板20之光接收區22與光發射區24中；第四步驟D為將該不透明之封蓋70定位於預定之位置，而該預定之位置於本實施例為該封蓋70之光接收孔72及光發射孔74係位於該光接收晶片30及該光發射晶片40之上，並以蓋封方式(Cap attach)設置於該基板20，此時，該光接收晶片30及該光發射晶片40即會分別容置於該第一容置空間76及該第二容置空間78內；第五步驟E為經由該封蓋70之光接收孔72及光發射孔74填入一可透光之該封裝膠體60，並使該封裝膠體60填滿該第一、第二容置空間76、78且包覆該光接收晶片30與該光發射晶片40，藉此減少光源於該光發射晶片40至該光接收晶片30之傳遞損耗、失真，並可達保護各該晶片30、40之用。
總括來說，本發明光學模組之電子單元50將先提供一電流限流或一具功能性調整效果之電子訊號於該光發射晶片40，且進行光源之發射，而該光發射晶片40所發射的光源會透過該封裝膠體60再經由該封蓋70的光發射孔74投射於物體之表面，並由該物體表面所反射的光源會再經由該封蓋70之光接收孔72接收而投射在該封裝膠體60並透射至 該光接收晶片30，最後該光接收晶片30會將所接收到的光訊號轉換成電子訊號來做運算處理。藉此，本發明之光學模組的封裝結構將該電子單元(如被動元件、具功能性IC或裸晶片)整合於同一封裝結構內，並透過該電子單元與該光發射晶片之電性連接設計，使本發明之光學模組不須另外搭配其他模組即具電流限流或功能性調整之功能，故本發明相較於先前技術不僅能減少組裝與封裝之工序，更能縮小整體結構之體積以及降低封裝之成本。
本發明於前揭露實施例中所揭露的構成元件，僅為舉例說明，並非用來限制本案之範圍，其他等效元件的替代或變化，亦應為本案之申請專利範圍所涵蓋。
10‧‧‧光學模組的封裝結構
20‧‧‧基板
22‧‧‧光接收區
24‧‧‧光發射區
30‧‧‧光接收晶片
40‧‧‧光發射晶片
50‧‧‧電子單元
60‧‧‧封裝膠體
70‧‧‧封蓋
72‧‧‧光接收孔
74‧‧‧光發射孔
76‧‧‧第一容置空間
78‧‧‧第二容置空間

Claims (10)

  1. 一種光學模組的封裝結構，包含有：一基板，定義出一光接收區及一光發射區；一光接收晶片，設於該基板之光接收區；一光發射晶片，設於該基板之光發射區；一電子單元，設於該基板上且電性連接於該光發射晶片；二封裝膠體，分別包覆於該光接收晶片、該光發射晶片及該電子單元；以及一封蓋，係設置於該基板之上，且具有一光發射孔及一光接收孔，該光發射孔及該光接收孔分別位於該光發射晶片及該光接收晶片之上方。
  2. 如申請專利範圍第1項所述之光學模組的封裝結構，其中各該封裝膠體及該封蓋分別為透光及不透光之樹脂。
  3. 如申請專利範圍第1項所述之光學模組的封裝結構，其中該封蓋具有第一容置空間及第二容置空間，該第一、第二容置空間分別與該光接收孔及該光發射孔相互連通。
  4. 如申請專利範圍第3項所述之光學模組的封裝結構，其中該光接收晶片及該光發射晶片分別容置於該第一、第二容置空間內。
  5. 如申請專利範圍第1項所述之光學模組的封裝結構，其中該基板為有機材質之雙馬來醯亞胺三嗪(Bismaleimide Triazine)基板等非陶瓷基板。
  6. 一種光學模組的封裝方法，該方法包含有下列步驟：(a)於基板上定義出該發射區及該接收區； (b)將該電子單元電性連接於基板上；(c)將該光接收晶片及該光發射晶片分別電性連接於該基板之接收區及發射區；(d)將該不透光之封蓋設置於該基板之上；以及(e)形成該可透光之封裝膠體於各該晶片及該電子單元。
  7. 如申請專利範圍第6項所述之光學模組的封裝方法，其中該電子單元與該基板之設置方法係利用表面黏著技術(Surface Mount Technology)。
  8. 如申請專利範圍第6項所述之光學模組的封裝方法，其中該電子單元與該光發射晶片之電性連接關係可為串聯或並聯。
  9. 如申請專利範圍第6項所述之光學模組的封裝方法，其中各該晶片與該基板之電性連接方法係為打線製程(Wire Bond)及接合製程(Die Attach)。
  10. 如申請專利範圍第6項所述之光學模組的封裝方法，其中更包含有一步驟(f)，係將該步驟(a)至步驟(d)所製成之該光學模組進行切割或衝切。
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