CN202275833U - 光学模块封装单元 - Google Patents

光学模块封装单元 Download PDF

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CN202275833U
CN202275833U CN2011203819609U CN201120381960U CN202275833U CN 202275833 U CN202275833 U CN 202275833U CN 2011203819609 U CN2011203819609 U CN 2011203819609U CN 201120381960 U CN201120381960 U CN 201120381960U CN 202275833 U CN202275833 U CN 202275833U
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light
chip
hole
optical module
substrate
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杜明德
游兆伟
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Lingsen Precision Industries Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/08—Systems determining position data of a target for measuring distance only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

本实用新型有关于一种光学模块封装单元，主要将一光发射芯片与一光接收芯片分别设置于一基板的光发射区及光接收区；一封盖，为一体成型的塑料壳体，设置于该基板上，具有一光发射孔及一光接收孔，分别对应罩盖于光发射芯片及光接收芯片周围而各自形成一腔室；二封胶体，分别填入于该光发射孔及该光接收孔的腔室中，用以包覆及保护该光发射芯片与该光接收芯片；由此，本实用新型的光学模块封装单元直接将该光发射芯片与该光接收芯片上片及打线设置在同一个基板上，接着将一体成型的封盖罩盖于基板上，再将二封胶体填入该光发射孔及该光接收孔所形成的腔室中，即完成光发射芯片与光接收芯片的封装作业，有效降低此类光学模块的封装成本。

Description

光学模块封装单元
技术领域
本实用新型与光学模块封装单元有关，特别是有关于一种可有效降低封装成本的光学模块封装单元。
背景技术
目前的掌上型电子装置(例如智能型手机)为了避免触控面板被误触或因应省电的需求，通常会设有一近接光学感应模块，亦即当上述掌上型电子装置一旦靠近物体的表面(例如脸部)时即会产生感应进行部分电源关闭动作。该模块的运作方式大体是利用一光发射芯片发射出一光源，经由中介物体(例如：脸部)的反射将光源投射至相邻的光感应芯片接收，再转换成电子信号进行后续处理。
然而，上述现有的光学感应模块的封装形式大体是分别将光发射芯片与光接收芯片独立封装后，再将两者共同建立在同一模块上，如此将使得此类光学模块的封装成本居高不下。
此外，上述现有的近接光学感应模块，其封装完成后的光发射芯片的发光效率并不佳，常使得相邻的光接收芯片接收光信号不良，而使得上述掌上型电子装置的相关判读不稳定。凡此种种，皆为目前同类光学模块仍需改善之处。
实用新型内容
本实用新型的主要目的在于提供一种光学模块封装单元，其可有效降低封装成本，以增进产品竞争力。
本实用新型的另一目的在于提供一种光学模块封装单元，其光发射芯片发光效率佳，有效改善光接收芯片接收不良的缺失。
为达成上述目的，本实用新型的光学模块封装单元包含有一基板、一光发射芯片、一光接收芯片、一封盖以及二封胶体；其中该基板定义出一光发射区与一光接收区；光发射芯片及光接收芯片，分别经上片及打线设于该基板的光发射区与一光接收区中；封盖，为一体成型的塑料壳体，设置于该基板上，具有一光发射孔及一光接收孔，其中该光发射孔具有一自下而上逐渐扩增的环状反射层，用以对应罩盖住该光发射芯片以形成一第一腔室；该光接收孔则设于该光发射孔侧方，具有相互连通但孔径不同的一第一阶孔及一第二阶孔，该第二阶孔对应罩盖住该光接收芯片周围而形成一第二腔室；二封装胶体，分别灌注于该基板的第一腔室与第二腔室内且分别包覆该光发射芯片与该光接收芯片，以作为该光发射芯片与该光接收芯片的保护层。
本实用新型的有益效果：本实用新型的光学模块封装单元直接将该光发射芯片与该光接收芯片上片及打线设置在同一个基板上，接着将一体成型的封盖罩盖于基板上，再将二封胶体填入该光发射孔及该光接收孔的腔室中即完成光发射芯片与光接收芯片的封装作业，有效降低光学模块的封装成本。
此外，本实用新型的光学模块封装单元，进一步于该塑料封盖的光发射孔的环状反射层表面另外以溅镀方式或其它涂布方式镀上一层金属材质；以及包覆该光发射芯片的封胶体于腔室中形成为球状凸起的设计，将有效提升光发射芯片的光源发光效率。
附图说明
图1为本实用新型一较佳实施例的俯视图。
图2为图1沿2-2剖线的剖视图。
图3中A至D为本实用新型一较佳实施例的封装流程示意图。
【主要元件符号说明】
光学模块封装单元10  基板20
光发射区202         光接收区204
光发射芯片30        光接收芯片40
封装胶体50          封盖60
光发射孔61          光接收孔65
金属层G       第一阶孔66
第二阶孔67    直线段62a
圆弧段62b
具体实施方式
兹配合图式列举以下较佳实施例，用以对本实用新型的结构及功效进行详细说明。
请参阅图1至图3所示，本实用新型一较佳实施例的光学模块封装单元10，切割取自于一般封装阵列(Array)的一单元，包含有一基板20、一光发射芯片30、一光接收芯片40、二封装胶体50，以及一封盖60。
该基板20在此以有机材质的BT(Bismaleimide Triazine)基板或FR4等非陶瓷基板为例，因此基板材料成本低，其可定义出一光发射区202与一光接收区204。
该光发射芯片30及该光接收芯片40，分别经上片及打线制程而设置于该基板20的光发射区202与光接收区204中。其中该光发射芯片30用以发射光源，该光接收芯片40则用以接收由该光发射芯片30发射出的光源。
该封盖60，为塑料一体成型的热塑型壳体或热固型壳体，其可利用射出法(Injection)或传递模塑法(Transfer molding)方式来制成，其材质例如为聚丙烯(Polypropylene，PP)或LCP(Liquid CrystalPolyester)材质，设置于该基板20上，具有一光发射孔61及一光接收孔65，其中该光发射孔61具有一自下而上逐渐扩增的环状反射层62，该反射层62的开口端缘是由一直线段62a及一圆弧段62b所组成，特别的是该反射层62表面得以溅镀方式或其它涂布方式镀上一层金属材质G，以提升光发射芯片30的发光效率；该光接收孔65则设于该光发射孔61侧方，具有相互连通但孔径不同的一第一阶孔66及一第二阶孔67，其中该第一阶孔66的孔径小于该第二阶孔67。以本实施例而言，该封盖60的该光发射孔61及该光接收孔65的第二阶孔67分别对应罩盖住该光发射芯片30及该光接收芯片40周围而形成为一第一及第二腔室。
该各封装胶体50，材质例如：透明的环氧树酯(Epoxy Resin)为例，分别灌注于该封盖60的该光发射孔61及该光接收孔65的第二阶孔67腔室中，用以分别包覆光发射芯片30与光接收芯片40，作为光发射芯片30与光接收芯片40的保护层，特别的是包覆该光发射芯片30的透明胶于腔室中是形成为球状凸起的设计，以提升光发射芯片30的光源发光效率。
请继续参阅图3中的A至D所示，本实用新型的光学模块封装流程，第一步骤是将每一阵列基板(Substrate array)的单一基板20上制作出一光发射区202与一光接收区204；第二步骤接着将一光发射芯片30及一光接收芯片40，分别经上片(Die attach)及打线(Wire bond)制程而设置于该基板20的该光发射区202与该光接收区204中；第三步骤为将阵列封盖(Lid array)60对应黏着于上述已完成芯片设置的阵列基板(Substrate array)；第四步骤为将二透明胶50分别灌注于各光发射区202、各光接收区204与封盖60的光发射孔61及光接收孔65的第二阶孔67所形成的第一及第二腔室中，而完成光发射芯片30及光接收芯片40的保护作业。最后，进行光学模块单元后续的切割作业(Singulation)，由于此属现有技艺，不予赘述。
经由上述结构可知，本实用新型光学模块采用价格低的基板(如BT基板或FR4等非陶瓷基板)20及一体成型的塑料封盖60，因此材料成本低；又，光发射芯片30与光接收芯片40是直接设置在同一个基板20上进行封装，并非如现有技术所采用的分别独立进行封装，如此将可达到有效降低制造成本的目的。
此外，本实用新型光学模块的光发射芯片30所发射的光源会经由封盖60的光发射孔61的反射层62而投射在物体表面，由物体表面所反射的光源会再经由封盖60的光接收孔65接收而投射至光接收芯片40，光接收芯片40会将所接收的光信号转换成电子信号进行运算处理。在发射光源与接收光源的过程中，通过光反射层62的特殊开口形状设计，使得光发射芯片30所发射的光源投射在不平整的物体表面(脸部)时仍然能够让光接收芯片40确实地接收到反射的光源；此外反射层62另外增设的金属层G及透明封胶球状凸起的设计更能进一步提升光发射芯片30的发光效率。
本实用新型于前揭实施例中所揭露的构成元件，仅为举例说明，并非用来限制本案的范围，其它等效元件的替代或变化，亦应为本案的申请专利范围所涵盖。

Claims (8)

1.一种光学模块封装单元，其特征在于，包含有：
一基板，定义出一光发射区与一光接收区；
一光发射芯片，设于该基板的光发射区；
一光接收芯片，设于该基板的光接收区；
一封盖，为一体成型的塑料壳体，设置于该基板上，具有一光发射孔及一光接收孔，其中该光发射孔具有一自下而上逐渐扩增的环状反射层，用以对应罩盖住该光发射芯片以形成一第一腔室；该光接收孔则设于该光发射孔侧方，具有相互连通但孔径不同的一第一阶孔及一第二阶孔，该第二阶孔对应罩盖住该光接收芯片周围而形成一第二腔室；以及
二封装胶体，分别灌注于该基板的第一腔室与第二腔室内且分别包覆该光发射芯片与该光接收芯片。
2.如权利要求1所述的光学模块封装单元，其特征在于，该封盖为塑料一体成型的热塑型壳体或热固型壳体。
3.如权利要求1所述的光学模块封装单元，其特征在于，该封盖的环状反射层表面镀有金属材质。
4.如权利要求1所述的光学模块封装单元，其特征在于，该封盖的第一阶孔的孔径小于该第二阶孔。
5.如权利要求1所述的光学模块封装单元，其特征在于，该各封装胶体包覆该光发射芯片的腔室中是形成为球状凸起。
6.如权利要求1所述的光学模块封装单元，其特征在于，该基板为非陶瓷基板，该非陶瓷基板为有机材质的BT基板。
7.如权利要求2所述的光学模块封装单元，其特征在于，该封盖的材质为聚丙烯或LCP材质。
8.如权利要求1所述的光学模块封装单元，其特征在于，该封盖的光发射孔的反射层的开口端缘是由一直线段及一圆弧段所组成。
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