TW201537701A - 具聚光結構之光學模組及其封裝方法 - Google Patents

具聚光結構之光學模組及其封裝方法 Download PDF

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TW201537701A
TW201537701A TW103112031A TW103112031A TW201537701A TW 201537701 A TW201537701 A TW 201537701A TW 103112031 A TW103112031 A TW 103112031A TW 103112031 A TW103112031 A TW 103112031A TW 201537701 A TW201537701 A TW 201537701A
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light
chamber
light emitting
light receiving
substrate
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TWI619208B (zh
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Ming-De Du
zhao-wei You
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Lingsen Precision Ind Ltd
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Priority to CN201410204755.3A priority patent/CN104952739B/zh
Priority to KR1020140063960A priority patent/KR20150113780A/ko
Priority to US14/306,875 priority patent/US20150279826A1/en
Priority to JP2014140317A priority patent/JP2015198243A/ja
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Abstract

一種具聚光結構之光學模組，其中光發射晶片及光接收晶片分別設於基板之光發射區及光接收區，而封蓋蓋合於基板上且包括有兩獨立空間之第一容室及第二容室，以及分別連通第一、第二容室之光發射孔及光接收孔，第一、第二容室分別容置各晶片，第一封裝膠體形成於該第一容室及光發射孔中且包覆光發射晶片，並於鄰近光發射孔設有第一聚光層，而第二封裝膠體形成於第二容室中且包覆光接收晶，並於鄰近該光接收孔設有第二聚光層。藉此，本發明之聚光結構有助於提升光學模組之發光效率，並降低其封裝製程不良之成本。

Description

具聚光結構之光學模組及其封裝方法
本發明係與光學模組有關，特別是指一種具聚光結構之光學模組。
目前近接光學感測模組儼然已成為新一代智慧型電子裝置(例如智慧型手機)的主流技術選擇，當該電子裝置貼近耳朵(臉部偵測)或者放置於口袋中時，該模組將立即關閉螢幕顯示以節省耗電並避免意外的碰觸，以帶來更佳的使用體驗，而該模組之作動原理係利用一光發射晶片發射(例如發光二極體LED)一光源，該光源經由物體表面之反射而投射至一光接收晶片，再轉換成電子訊號進行後續處理，例如中華民國第M399313號專利案之近接感測封裝結構，該案之封裝結構包含有一基座、一垂直連結基座四周圍之檔牆，以及一蓋合於檔牆上之蓋板，並以此形成一容置空間，容置空間中設有一隔板，用以區隔容置空間，藉此，光發射晶片與光接收晶片得以區隔設置於基板上，以避免相互受到光源之干擾而降低產品效能。
然而，當前案之光發射晶片所發出的光源經一聚光反射層反射且由外凸弧狀之透明膠體向外傳遞時，光源係呈現散射之情況，並無聚焦及增強發光效率之功效，再者，因前案之蓋板與擋牆並非為一體成形所構成的，故彼此之間難免形成有一縫隙，甚至形成階梯狀之斷差，此時，當透明 膠體如前案僅設於擋牆時，散射的光源將有一部份照射於聚光反射層，一部份照射於此縫隙，還有一部份照射於階梯斷差上，因此，各部份的反射光源將有不連續甚至相互干擾之問題產生。
綜上所陳，習知的光學模組仍具上述之缺失而有待改進。
本發明之主要目的在於提供一種具聚光結構之光學模組，其不僅有助提升發光之效率，更可大大降低封裝不良所產生的成本。
為了達成上述之目的，本發明之具聚光結構之光學模組包含有一基板、一光發射晶片、一光接收晶片、一封蓋、一第一封裝膠體以及一第二封裝膠體，其中該基板定義有一光發射區及一光接收區，該光發射晶片設於該基板之光發射區，而該光接收晶片設於該基板之光接收區，該封蓋係蓋合於該基板上且包括有兩獨立空間之一第一容室及一第二容室，以及一分別連通該第一容室及該第二容室之光發射孔及光接收孔，該第一容室容置該光發射晶片且該光發射孔位於該光發射晶片上方，該第二容室容置該光接收晶片且該光接收孔位於該光接收晶片上方，該第一封裝膠體形成於該第一容室及該光發射孔中，且包覆該光發射晶片，並於鄰近該光發射孔設有一第一聚光層，以及該第二封裝膠體形成於該第二容室中，且包覆該光接收晶，並於鄰近該光接收孔設有一第二聚光層。
其中該第一聚光層向外之表面係呈現內凹弧狀結構。
其中該第二聚光層對應該光接收孔之表面係呈現外凸弧狀結構。
其中該封蓋係為一頂板及一位於該頂板與該基板之間的預成型件所構成，該頂板形成有該光發射孔及該光接收孔，而該預成型件形成有該第一、第二容室。
其中該預成型件之第一容室的側緣設有一由內向外逐漸擴張的第一導光層。
其中該頂板之光發射孔之側緣設有一由內向外逐漸擴張的第二導光層。
本發明另提供一種具聚光結構之光學模組的封裝方法，該方法包含有下列步驟：形成一預成型件於一基板上；定義一光發射區及一光接收區於該基板上；將一光發射晶片及一光接收晶片分別電性連接於該基板之光發射區及光接收區；將一頂板固設於該預成型件上；以及在該預成型件內填入一封裝膠體，以供該封裝膠體覆蓋於該光發射晶片與該光接收晶片之上。
其中更包含有利用模壓製程形成具有一第一容室、一第二容室及一第一導光層的預成型件之步驟。
其中更包含有利用模壓製程形成具一光發射孔及一光接收孔的頂板之步驟。
其中更包含有一於該第一封裝膠體的表面形成一內凹弧狀結構之第一聚光層的步驟，以及一於該第二封裝膠體的表面形成一外凸弧狀結構之第二聚光層的步驟。
藉此，本發明之具聚光結構之光學模組透過各該封裝膠體的聚光層及該第一容室與該光發射孔的導光層以提升其發光效率，更因該預成型件在各該晶片電性連接於該基板前以預先成型於該基板上，故在該封蓋封裝製程即發現不良時即無須進行各該晶片上片製程，如此一來可大大降低封裝製程不良所產生的成本。
為使 貴審查委員能進一步了解本發明之構成、特徵及其目的，以下乃舉本發明之若干實施例，並配合圖式詳細說明如後，同時讓熟悉該技術領域者能夠具體實施，惟以下所述者，僅係為了說明本發明之技術內容及特徵而提供之一實施方式，凡為本發明領域中具有一般通常知識者，於了解本發明之技術內容及特徵之後，以不違背本發明之精神下，所為之種種簡單之修飾、替換或構件之減省，皆應屬於本發明意圖保護之範疇。
10‧‧‧光學模組
20‧‧‧基板
21‧‧‧光發射區
23‧‧‧光接收區
30‧‧‧光發射晶片
40‧‧‧光接收經片
50‧‧‧封蓋
51‧‧‧第一容室
52‧‧‧第二容室
53‧‧‧光發射孔
54‧‧‧光接收孔
55‧‧‧頂板
551‧‧‧第二導光層
56‧‧‧預成型件
561‧‧‧第一導光層
60‧‧‧第一封裝膠體
70‧‧‧第二封裝膠體
第1圖為本發明一較佳實施例所提供之具聚光結構之光學模組的俯視圖。
第2圖為本發明該較佳實施例所提供之具聚光結構之光學模組的剖視圖，其為第1圖沿2-2剖線。
第3圖為本發明該較佳實施例所提供之具聚光結構之光學 模組的流程圖。
為了詳細說明本發明之結構、特徵及功效所在，茲列舉一較佳實施例並配合下列圖式說明如後，其中：請先參閱第1圖至第2圖所示，本發明一較佳實施例所提供之具聚光結構之光學模組10，包含有一基板20、一光發射晶片30、一光接收晶片40、一封蓋50、一第一封裝膠體60以及一第二封裝膠體70。
該基板20為有機材質之雙馬來醯亞胺三嗪(Bismaleimide Triazine)基板等非陶瓷基板，且於該基板20上定義有一光發射區21及一光接收區23。
該光發射晶片30設於該基板之光發射區21。
該光接收晶片40設於該基板之光接收區23。
該封蓋50係蓋合於該基板20上且包括有兩獨立空間之一第一容室51及一第二容室52，以及一分別連通該第一容室51及該第二容室52之光發射孔53及光接收孔54，該第一容室51容置該光發射晶片30且該光發射孔53位於該光發射晶片30之上方，該第二容室52容置該光接收晶片40且該光接收孔54位於該光接收晶片40之上方。本發明之較佳實施例中，該封蓋50係為一頂板55及一位於該頂板55與該基板20之間的預成型件56所構成，該頂板55形成有該光發射孔53及該光接收孔54，而該預成型件56形成有該第一、第二容室51、52，藉此，該光發射晶片30與該光接收晶片40可各別獨立地設置於該第一容室51及該第二容室52中，彼 此不會相互干擾。
該第一封裝膠體60形成於該第一容室51及該光發射孔53中，且包覆該光發射晶片30，並於鄰近該光發射孔53設有一第一聚光層61，其中該第一聚光層61朝向外部之表面係呈現內凹弧狀結構。
該第二封裝膠體70形成於該第二容室52中，且包覆該光接收晶40，並於鄰近該光接收孔54設有一第二聚光層71。其中該第二聚光層71對應該光接收孔54之表面係呈現外凸弧狀結構。
值得一提的是，在本發明該較佳實施例中，該預成型件56在該第一容室51的側緣內設有一由內向外逐漸擴張的第一導光層561，而該頂板55在該光發射孔53之側緣內同樣設有一由內向外逐漸擴張的第二導光層551，如此一來，該光發射晶片30所發出之光源將會受到該第一導光層561與該第二導光層551之導引而朝一特定方向集中，藉以提升該光發射晶片30之發光效率；此外，該第一封裝膠體60及該第二封裝膠體70皆為一可透光之矽膠，該第一封裝膠體60之第一聚光層61朝向外部之表面係呈現內凹弧狀結構，而該第二封裝膠體70之第二聚光層71對應該光接收孔之表面係呈現外凸弧狀結構，當該光發射晶片30發出之光源被該第一、第二導光層561、551導引且通過該第一封裝膠體60之第一聚光層61時，光源則會因內凹弧狀的結構而作二次聚焦，經二次聚焦後之光源將投射至物體的表面(圖中未示)，並朝該光接收晶片40的方向作反射，其中反射之光源會先穿過該光 接收孔54再傳遞到該第二容室52中，再由該第二聚光層71的外凸弧狀結構將光源聚集於該光接收晶片40中，以提升接收之品質。
請再參閱第3圖所示，係為本發明具聚光結構之光學模組10的封裝方法，該方法包含有下列步驟：
步驟A：預先形成該預成型件56於該基板20上。
步驟B：定義該光發射區21及該光接收區23於該基板20上，並將該光發射晶片30及該光接收晶片40分別利用上片(Die Attach)及打線(Wire Bond)製程連接於該基板20之光發射區21及光接收區23上。
步驟C：將該頂板55固設於該預成型件56上，在該較佳實施例中，該頂板55係先與該預成型件56對齊後再以膠合之方式黏固於該預成型件56上。
步驟D：在該預成型件56內填入各該封裝膠體60、70，以供各該封裝膠體60、70覆蓋於該光發射晶片30與該光接收晶片40之上。
在步驟A之前，該預成型件56係以先利用模壓之方式形成有該第一容室51、該第二容室52以及該第一導光層561特徵結構，再以黏合製程固設於該基板20上，如此以免去在該基板20上進行後加工之程序，此外，該頂板55與前揭相同，係在步驟A之前預先利用模壓製程形成有具該第二導光層551之光發射孔53，以及該光接收孔54。
在步驟D的部分，該第一封裝膠體60與該第二封裝膠體70可分批填入於該第一容室51及該第二容室52 中，或是將該第一、第二封裝膠體60、70在同一工序中填入該第一、第二容室51、52中，而此係取決於封裝製程之需求，例如為了減少工時成本、減少不良所產生之成本等條件下。除此之外，該步驟D更包含有在該第一封裝膠體60的表面形成內凹弧狀結構之第一聚光層61的步驟，以及在該第二封裝膠體70的表面形成外凸弧狀結構之第二聚光層71的步驟，藉此內凹或外凸之弧狀特徵以改變光源的路徑，以達到提升發光及接收效率之功效。
總括來說，本發明之具聚光結構之光學模組10透過該第一、第二封裝膠體60、70的聚光層61、71，以及在該第一容室51與該光發射孔53的導光層561、551以提升其發光效率，更因該預成型件56在各該晶片30、40電性連接於該基板20之前已預先成型56於該基板20上，故在該封蓋50封裝製程即發現不良時則無須進行下一階段該光發射晶片30及該光接收晶片40的上片製程，如此一來可大大降低封裝製程不良所產生的成本。
本發明於前揭露實施例中所揭露的構成元件，僅為舉例說明，並非用來限制本案之範圍，其他等效元件的替代或變化，亦應為本案之申請專利範圍所涵蓋。
10‧‧‧光學模組
20‧‧‧基板
21‧‧‧光發射區
23‧‧‧光接收區
30‧‧‧光發射晶片
40‧‧‧光接收經片
50‧‧‧封蓋
51‧‧‧第一容室
52‧‧‧第二容室
53‧‧‧光發射孔
54‧‧‧光接收孔
55‧‧‧頂板
551‧‧‧第二導光層
56‧‧‧預成型件
561‧‧‧第一導光層
60‧‧‧第一封裝膠體
70‧‧‧第二封裝膠體

Claims (10)

  1. 一種具聚光結構之光學模組，包含有：一基板，係定義出一光發射區及一光接收區；一光發射晶片，設於該基板之光發射區；一光接收晶片，設於該基板之光接收區；一封蓋，係蓋合於該基板上且包括有兩獨立空間之一第一容室及一第二容室，以及一分別連通該第一容室及該第二容室之光發射孔及光接收孔，該第一容室容置該光發射晶片且該光發射孔位於該光發射晶片上方，該第二容室容置該光接收晶片且該光接收孔位於該光接收晶片上方；一第一封裝膠體，形成於該第一容室及該光發射孔中，且包覆該光發射晶片，並於鄰近該光發射孔設有一第一聚光層；以及一第二封裝膠體，形成於該第二容室中，且包覆該光接收晶，並於鄰近該光接收孔設有一第二聚光層。
  2. 如申請專利範圍第1項所述之具聚光結構之光學模組，其中該第一聚光層向外之表面係呈現內凹弧狀結構。
  3. 如申請專利範圍第1項所述之具聚光結構之光學模組，其中該第二聚光層對應該光接收孔之表面係呈現外凸弧狀結構。
  4. 如申請專利範圍第1項所述之具聚光結構之光學模組，其中該封蓋係為一頂板及一位於該頂板與該基板之間的預成型件所構成，該頂板形成有該光發射孔及該光接收孔，而該預成型件形成有該第一、第二容室。
  5. 如申請專利範圍第4項所述之具聚光結構之光學模組，其中該預成型件之第一容室的側緣設有一由內向外逐漸擴張的第一導光層。
  6. 如申請專利範圍第4項所述之具聚光結構之光學模組，其中該頂板之光發射孔之側緣設有一由內向外逐漸擴張的第二導光層。
  7. 一種具聚光結構之光學模組的封裝方法，該方法包含有下列步驟：形成一預成型件於一基板上；定義一光發射區及一光接收區於該基板上；將一光發射晶片及一光接收晶片分別電性連接於該基板之光發射區及光接收區；將一頂板固設於該預成型件上；以及在該預成型件內填入一封裝膠體，以供該封裝膠體覆蓋於該光發射晶片與該光接收晶片之上。
  8. 如申請專利範圍第7項所述之具聚光結構之光學模組的封裝方法，其中更包含有利用模壓製程形成具有一第一容室、一第二容室及一第一導光層的預成型件之步驟。
  9. 如申請專利範圍第7項所述之具聚光結構之光學模組的封裝方法，其中更包含有利用模壓製程形成具一光發射孔及一光接收孔的頂板之步驟。
  10. 如申請專利範圍第7項所述之具聚光結構之光學模組的封裝方法，其中更包含有一於該第一封裝膠體的表面形成 一內凹弧狀結構之第一聚光層的步驟，以及一於該第二封裝膠體的表面形成一外凸弧狀結構之第二聚光層的步驟。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI711148B (zh) * 2017-09-27 2020-11-21 日月光半導體製造股份有限公司 光學封裝結構及光學模組
TWI721815B (zh) * 2020-03-10 2021-03-11 勝麗國際股份有限公司 感測器封裝結構

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180017741A1 (en) * 2016-07-15 2018-01-18 Advanced Semiconductor Engineering, Inc. Semiconductor package device and method of manufacturing the same
CN106449864B (zh) * 2016-08-30 2018-05-29 江苏派诺光电科技股份有限公司 一种光探测器件的制造方法
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FR3100380B1 (fr) * 2019-09-03 2021-10-01 St Microelectronics Grenoble 2 Dispositif électronique comprenant des composants électroniques optiques et procédé de fabrication
FR3100379B1 (fr) * 2019-09-03 2021-09-24 St Microelectronics Grenoble 2 Dispositif électronique comprenant des composants électroniques optiques et procédé de fabrication
CN111063621B (zh) * 2019-12-30 2021-11-02 江苏大摩半导体科技有限公司 一种光电探测器及其制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3910171B2 (ja) * 2003-02-18 2007-04-25 シャープ株式会社 半導体発光装置、その製造方法および電子撮像装置
JP4802533B2 (ja) * 2004-11-12 2011-10-26 日亜化学工業株式会社 半導体装置
JP2007305844A (ja) * 2006-05-12 2007-11-22 Stanley Electric Co Ltd 発光装置とその製造方法
DE102010013317B4 (de) * 2010-03-30 2021-07-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauteil, Gehäuse hierfür und Verfahren zur Herstellung des optoelektronischen Bauteils
TWM399313U (en) * 2010-07-30 2011-03-01 Sigurd Microelectronics Corp Proximity sensor package structure
CN103548148B (zh) * 2011-05-19 2016-09-28 欧司朗光电半导体有限公司 光电子装置和用于制造光电子装置的方法
TWM428490U (en) * 2011-09-27 2012-05-01 Lingsen Precision Ind Ltd Optical module packaging unit
TWM424605U (en) * 2011-09-27 2012-03-11 Lingsen Precision Ind Ltd The optical module package structure
JP6164087B2 (ja) * 2011-09-30 2017-07-19 株式会社カネカ 表面実装型発光装置用樹脂成形体およびその製造方法ならびに表面実装型発光装置
KR20130096094A (ko) * 2012-02-21 2013-08-29 엘지이노텍 주식회사 발광소자 패키지, 발광 소자 패키지 제조방법 및 이를 구비한 조명 시스템
TWM448798U (zh) * 2012-08-10 2013-03-11 Meicer Semiconductor Inc 光學元件封裝模組

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI711148B (zh) * 2017-09-27 2020-11-21 日月光半導體製造股份有限公司 光學封裝結構及光學模組
TWI721815B (zh) * 2020-03-10 2021-03-11 勝麗國際股份有限公司 感測器封裝結構

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