CN104952739B - 具有聚光结构的光学模块的封装方法 - Google Patents
具有聚光结构的光学模块的封装方法 Download PDFInfo
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Abstract
本发明提供了一种具有聚光结构的光学模块的封装方法。该光学模块中,光发射芯片及光接收芯片分别设于基板的光发射区及光接收区,而封盖盖合于基板上且包括有两独立空间的第一容室及第二容室,以及分别连通第一、第二容室的光发射孔及光接收孔,第一、第二容室分别容置各芯片,第一封装胶体形成于该第一容室及光发射孔中且包覆光发射芯片,并于邻近光发射孔设有第一聚光层,而第二封装胶体形成于第二容室中且包覆光接收芯片,并于邻近该光接收孔设有第二聚光层。借此,本发明的聚光结构有助于提升光学模块的发光效率,并降低其封装工艺不合格的成本。
Description
技术领域
本发明与光学模块有关,特别是指一种具有聚光结构的光学模块的封装方法。
背景技术
目前近接光学感测模块俨然已成为新一代智能型电子装置(例如智能型手机)的主流技术选择,当该电子装置贴近耳朵(脸部侦测)或者放置于口袋中时,该模块将立即关闭屏幕显示以节省耗电并避免意外的碰触,以带来更好的使用体验,而该模块的工作原理是利用一光发射芯片发射(例如发光二极管LED)一光源,该光源经由物体表面的反射而投射至一光接收芯片,再转换成电子信号进行后续处理,例如中国台湾第M399313号专利案的近接感测封装结构,该案的封装结构包含有一基座、一垂直连接基座四周围的档墙,以及一盖合于档墙上的盖板,并以此形成一容置空间,容置空间中设有一隔板,用以区隔容置空间,借此,光发射芯片与光接收芯片得以区隔设置于基板上,以避免相互受到光源的干扰而降低产品效能。
然而,当前案的光发射芯片所发出的光源经一聚光反射层反射且由外凸弧状的透明胶体向外传递时,光源呈现散射的情况,并无聚焦及增强发光效率的功效,此外,因前案的盖板与挡墙并非为一体成形所构成的,因此彼此之间难免形成有一缝隙,甚至形成阶梯状的断差,此时,当透明胶体如前案仅设于挡墙时,散射的光源将有一部分照射于聚光反射层,一部分照射于此缝隙,还有一部分照射于阶梯断差上,因此,各部分的反射光源将有不连续甚至相互干扰的问题产生。
综上所述,现有的光学模块仍具上述的缺陷而有待改进。
发明内容
本发明的主要目的在于提供一种具有聚光结构的光学模块,其不仅有助提升发光的效率,更可大大降低封装不合格所产生的成本。
为了达成上述的目的,本发明的具有聚光结构的光学模块包含有一基板、一光发射芯片、一光接收芯片、一封盖、一第一封装胶体以及一第二封装胶体,其中该基板定义有一光发射区及一光接收区,该光发射芯片设于该基板的光发射区,而该光接收芯片设于该基板的光接收区,该封盖盖合于该基板上且包括有两独立空间的一第一容室及一第二容室,以及一分别连通该第一容室及该第二容室的光发射孔及光接收孔,该第一容室容置该光发射芯片且该光发射孔位于该光发射芯片上方,该第二容室容置该光接收芯片且该光接收孔位于该光接收芯片上方,该第一封装胶体形成于该第一容室及该光发射孔中,且包覆该光发射芯片,并于邻近该光发射孔设有一第一聚光层,以及该第二封装胶体形成于该第二容室中,且包覆该光接收芯片,并于邻近该光接收孔设有一第二聚光层。
其中该第一聚光层向外的表面呈现内凹弧状结构。
其中该第二聚光层对应该光接收孔的表面呈现外凸弧状结构。
其中该封盖为一顶板及一位于该顶板与该基板之间的预成型件所构成,该顶板形成有该光发射孔及该光接收孔,而该预成型件形成有该第一、第二容室。
其中该预成型件的第一容室的侧缘设有一由内向外逐渐扩张的第一导光层。
其中该顶板的光发射孔的侧缘设有一由内向外逐渐扩张的第二导光层。
本发明另提供一种具有聚光结构的光学模块的封装方法,该方法包含有下列步骤:形成一预成型件于一基板上;定义一光发射区及一光接收区于该基板上;将一光发射芯片及一光接收芯片分别电性连接于该基板的光发射区及光接收区;将一顶板固设于该预成型件上;以及在该预成型件内填入一封装胶体,以供该封装胶体覆盖于该光发射芯片与该光接收芯片之上。
其中还包含有利用模压工艺形成具有一第一容室、一第二容室及一第一导光层的预成型件的步骤。
其中还包含有利用模压工艺形成具有一光发射孔及一光接收孔的顶板的步骤。
其中还包含有一在该第一封装胶体的表面形成一内凹弧状结构的第一聚光层的步骤,以及一在该第二封装胶体的表面形成一外凸弧状结构的第二聚光层的步骤。
借此,本发明的具有聚光结构的光学模块透过各该封装胶体的聚光层及该第一容室与该光发射孔的导光层以提升其发光效率,更因该预成型件在各该芯片电性连接于该基板前以预先成型于该基板上,因此在该封盖封装工艺即发现不合格时即无需进行各该芯片上片工艺,如此一来可大大降低封装工艺不合格所产生的成本。
为使贵审查员能进一步了解本发明的构成、特征及其目的,以下乃举本发明的若干实施例,并配合附图详细说明如后,同时让本领域技术人员能够具体实施,只是以下所述的实施例,仅是为了说明本发明的技术内容及特征而提供的一实施方式,凡为本发明领域中普通技术人员,在了解本发明的技术内容及特征之后,以不违背本发明的精神下,所为的种种简单的修饰、替换或构件的减省,皆应属于本发明意图保护的范畴。
附图说明
图1为本发明一优选实施例所提供的具有聚光结构的光学模块的俯视图。
图2为本发明该优选实施例所提供的具有聚光结构的光学模块的剖视图,其为图1沿2-2剖线。
图3为本发明该优选实施例所提供的具有聚光结构的光学模块的流程图。
【符号说明】
10-光学模块;
20-基板;
21-光发射区; 23-光接收区;
30-光发射芯片;
40-光接收经片;
50-封盖;
51-第一容室; 52-第二容室;
53-光发射孔; 54-光接收孔;
55-顶板; 551第二导光层;
56-预成型件; 561第一导光层;
60-第一封装胶体;
70-第二封装胶体。
具体实施方式
为了详细说明本发明的结构、特征及功效所在,现列举一优选实施例并配合下列附图说明如下,其中:
请先参阅图1至图2所示,本发明一优选实施例所提供的具有聚光结构的光学模块10,包含有一基板20、一光发射芯片30、一光接收芯片40、一封盖50、一第一封装胶体60以及一第二封装胶体70。
该基板20为有机材质的双马来酰亚胺三嗪(Bismaleimide Triazine)基板等非陶瓷基板,且在该基板20上定义有一光发射区21及一光接收区23。
该光发射芯片30设于该基板的光发射区21。
该光接收芯片40设于该基板的光接收区23。
该封盖50盖合于该基板20上且包括有两独立空间的一第一容室51及一第二容室52,以及一分别连通该第一容室51及该第二容室52的光发射孔53及光接收孔54,该第一容室51容置该光发射芯片30且该光发射孔53位于该光发射芯片30的上方,该第二容室52容置该光接收芯片40且该光接收孔54位于该光接收芯片40的上方。本发明的优选实施例中,该封盖50为一顶板55及一位于该顶板55与该基板20之间的预成型件56所构成,该顶板55形成有该光发射孔53及该光接收孔54,而该预成型件56形成有该第一、第二容室51、52,借此,该光发射芯片30与该光接收芯片40可分别独立地设置于该第一容室51及该第二容室52中,彼此不会相互干扰。
该第一封装胶体60形成于该第一容室51及该光发射孔53中,且包覆该光发射芯片30,并于邻近该光发射孔53设有一第一聚光层61,其中该第一聚光层61朝向外部的表面呈现内凹弧状结构。
该第二封装胶体70形成于该第二容室52中,且包覆该光接收芯片40,并于邻近该光接收孔54设有一第二聚光层71。其中该第二聚光层71对应该光接收孔54的表面呈现外凸弧状结构。
值得一提的是,在本发明该优选实施例中,该预成型件56在该第一容室51的侧缘内设有一由内向外逐渐扩张的第一导光层561,而该顶板55在该光发射孔53的侧缘内同样设有一由内向外逐渐扩张的第二导光层551,如此一来,该光发射芯片30所发出的光源将会受到该第一导光层561与该第二导光层551的导引而朝一特定方向集中,藉以提升该光发射芯片30的发光效率;此外,该第一封装胶体60及该第二封装胶体70皆为一可透光的硅胶,该第一封装胶体60的第一聚光层61朝向外部的表面呈现内凹弧状结构,而该第二封装胶体70的第二聚光层71对应该光接收孔的表面呈现外凸弧状结构,当该光发射芯片30发出的光源被该第一、第二导光层561、551导引且透过该第一封装胶体60的第一聚光层61时,光源则会因内凹弧状的结构而作二次聚焦,经二次聚焦后的光源将投射至物体的表面(图中未示),并朝该光接收芯片40的方向作反射,其中反射的光源会先穿过该光接收孔54再传递到该第二容室52中,再由该第二聚光层71的外凸弧状结构将光源聚集于该光接收芯片40中,以提升接收的质量。
请再参阅图3所示,为本发明具有聚光结构的光学模块10的封装方法,该方法包含有下列步骤:
步骤A:预先形成该预成型件56于该基板20上。
步骤B:定义该光发射区21及该光接收区23于该基板20上,并将该光发射芯片30及该光接收芯片40分别利用上片(Die Attach)及打线(Wire Bond)工艺连接于该基板20的光发射区21及光接收区23上。
步骤C:将该顶板55固设于该预成型件56上,在该优选实施例中,该顶板55先与该预成型件56对齐后再以胶合的方式黏固于该预成型件56上。
步骤D:在该预成型件56内填入各该封装胶体60、70,以供各该封装胶体60、70覆盖于该光发射芯片30与该光接收芯片40之上。
在步骤A之前,该预成型件56以先利用模压的方式形成有该第一容室51、该第二容室52以及该第一导光层561特征结构,再以黏合工艺固设于该基板20上,如此以免去在该基板20上进行后加工的程序,此外,该顶板55与前述相同,是在步骤A之前预先利用模压工艺形成具有该第二导光层551的光发射孔53,以及该光接收孔54。
在步骤D的部分,该第一封装胶体60与该第二封装胶体70可分批填入于该第一容室51及该第二容室52中,或是将该第一、第二封装胶体60、70在同一工序中填入该第一、第二容室51、52中,而此取决于封装工艺的需求,例如为了减少工时成本、减少不合格所产生的成本等条件下。除此之外,该步骤D还包含有在该第一封装胶体60的表面形成内凹弧状结构的第一聚光层61的步骤,以及在该第二封装胶体70的表面形成外凸弧状结构的第二聚光层71的步骤,借此内凹或外凸的弧状特征以改变光源的路径,以达到提升发光及接收效率的功效。
总的来说,本发明的具有聚光结构的光学模块10透过该第一、第二封装胶体60、70的聚光层61、71,以及在该第一容室51与该光发射孔53的导光层561、551以提升其发光效率,更因该预成型件56在各该芯片30、40电性连接于该基板20之前已预先成型56于该基板20上,因此在该封盖50封装工艺即发现不合格时则无需进行下一阶段该光发射芯片30及该光接收芯片40的上片工艺,如此一来可大大降低封装工艺不合格所产生的成本。
本发明在前揭露实施例中所揭露的构成元件,仅为举例说明,并非用来限制本发明的范围,其他等效元件的替代或变化,也应为本案的权利要求所涵盖。
Claims (3)
1.一种具有聚光结构的光学模块的封装方法,其特征在于,该方法包含有下列步骤:
(a)利用模压工艺形成具有一第一容室、一第二容室及一第一导光层的预成型件,再将该预成型件固设于一基板上;
(b)定义一光发射区及一光接收区于该基板上;
(c)将一光发射芯片及一光接收芯片分别电性连接于该基板的光发射区及光接收区;
(d)将一顶板固设于该预成型件上;以及
(e)在该预成型件内填入一第一封装胶体及一第二封装胶体,以供该第一封装胶体及该第二封装胶体分别覆盖于该光发射芯片与该光接收芯片之上。
2.根据权利要求1所述的具有聚光结构的光学模块的封装方法,其中还包含有利用模压工艺形成具有一光发射孔及一光接收孔的顶板的步骤。
3.根据权利要求1所述的具有聚光结构的光学模块的封装方法,其中还包含有一在该第一封装胶体的表面形成一内凹弧状结构的第一聚光层的步骤,以及一在该第二封装胶体的表面形成一外凸弧状结构的第二聚光层的步骤。
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CN108571989A (zh) * | 2017-03-10 | 2018-09-25 | 卿定求 | 一种小方形独立型光电传感器 |
CN108960007B (zh) * | 2017-05-19 | 2022-01-04 | 致伸科技股份有限公司 | 光学式指纹识别模块 |
US10720751B2 (en) * | 2017-09-27 | 2020-07-21 | Advanced Semiconductor Engineering, Inc. | Optical package structure, optical module, and method for manufacturing the same |
CN107871789A (zh) * | 2017-12-13 | 2018-04-03 | 刘向宁 | 收发一体式光电转换器 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1523681A (zh) * | 2003-02-18 | 2004-08-25 | 夏普株式会社 | 半导体发光装置及其制造方法和电子图像拾取装置 |
TWM399313U (en) * | 2010-07-30 | 2011-03-01 | Sigurd Microelectronics Corp | Proximity sensor package structure |
CN103548148A (zh) * | 2011-05-19 | 2014-01-29 | 欧司朗光电半导体有限公司 | 光电子装置和用于制造光电子装置的方法 |
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JP2007305844A (ja) * | 2006-05-12 | 2007-11-22 | Stanley Electric Co Ltd | 発光装置とその製造方法 |
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TWM428490U (en) * | 2011-09-27 | 2012-05-01 | Lingsen Precision Ind Ltd | Optical module packaging unit |
TWM424605U (en) * | 2011-09-27 | 2012-03-11 | Lingsen Precision Ind Ltd | The optical module package structure |
US9793456B2 (en) * | 2011-09-30 | 2017-10-17 | Kaneka Corporation | Molded resin body for surface-mounted light-emitting device, manufacturing method thereof, and surface-mounted light-emitting device |
KR20130096094A (ko) * | 2012-02-21 | 2013-08-29 | 엘지이노텍 주식회사 | 발광소자 패키지, 발광 소자 패키지 제조방법 및 이를 구비한 조명 시스템 |
TWM448798U (zh) * | 2012-08-10 | 2013-03-11 | Meicer Semiconductor Inc | 光學元件封裝模組 |
-
2014
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1523681A (zh) * | 2003-02-18 | 2004-08-25 | 夏普株式会社 | 半导体发光装置及其制造方法和电子图像拾取装置 |
TWM399313U (en) * | 2010-07-30 | 2011-03-01 | Sigurd Microelectronics Corp | Proximity sensor package structure |
CN103548148A (zh) * | 2011-05-19 | 2014-01-29 | 欧司朗光电半导体有限公司 | 光电子装置和用于制造光电子装置的方法 |
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