CN202094168U - Led封装结构 - Google Patents
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Abstract
本实用新型涉及一种LED封装结构,包括LED芯片、导线框、外壳。导线框设于外壳的壳体内,导线框包括第一金属侧壁、第二金属侧壁及底面。第一金属侧壁和第二金属侧壁分别位于底面的两侧。LED芯片设于底面。第一金属侧壁表面和第二金属侧壁表面设有具有高反射率的塑料层,且塑料层沿第一金属侧壁表面和第二金属侧壁表面向远离底面方向延伸,并与外壳接合。本实用新型的LED封装结构,通过在导线框的金属侧壁设置具有高反射率的塑料层,既保证了湿气渗入至LED封装结构内部具有较长的路径,同时,又减小了LED芯片直接照射在金属支架上造成的光通量的损失。
Description
技术领域
本实用新型涉及一种LED封装结构。
背景技术
LED即发光二极管,是一种常见光源,其具有低功耗、使用寿命长等优点,广泛使用于照明、液晶显示器等领域。其中,LED封装结构对LED的出光和散热的提高具有重要的影响。
如图1所示,其为现有技术中导线框设有平面结构的LED封装结构的示意图。该LED封装结构10包括:LED芯片11、导线框(Lead Frame)12、外壳13。导线框12设于外壳13的壳体内,LED芯片11设于导线框12的表面。其中,导线框12包括二金属电极12a、12b,该二金属电极12a、12b彼此断开,LED芯片11以绝缘方式设于导线框12的金属电极12b上。LED芯片11的正、负电极分别通过二金属导线14连接到导线框12的相对应的二金属电极12a、12b。外壳13用于密封LED芯片11。但是,在这种LED封装结构中,在外壳13与导线框12接触的界面密封效果并不佳,且外界湿气到达封闭空间的路径较短。因此,外部环境的湿气易于通过如图1所示的虚线AA’箭头指向的路径和虚线BB’箭头指向的路径渗入到封闭的LED空间内,影响LED封装产品的性能,如金属电极硫化等,从而降低了产品的信赖度。
此外,在外壳13与导线框12形成封闭空间中填充透明树脂(图中未示出)。
如图2所示,其为现有技术中导线框具有凹部结构的LED封装结构的示意图。该LED封装结构20包括:LED芯片21、导线框22、外壳23和透明树脂(图未示)。LED芯片21设于导线框22的下凹部位的表面上。其中,导线框22设于外壳23的壳体内,导线框22包括二金属电极22a、22b,该二金属电极22a、22b彼此断开,LED芯片21以绝缘方式设于导线框22的金属电极22a上。LED芯片的正、负电极分别通过二金属导线24连接到导线框22的相对应的二金属电极22a、22b。外壳23用于密封LED芯片21,与导线框22形成封闭空间,在封闭空间中填充有透明树脂。但是,在这种将导线框22具有下凹结构的LED封装结构中,LED芯片21发出的光线会直接照射到导线框22的两金属电极22a、22b因下凹形成的金属侧壁上,而所采用的金属材料由于反射率不高,通常会吸收部分光线,导致LED射出的光通量降低。此外,该LED封装结构与如图1所示的LED封装结构相比,虽然外界湿气到达封闭空间的路径有所延长,但路径较简单,且路径长度仍不足,外部环境的湿气仍可通过如图2所示的虚线CC’箭头指向的路径和虚线DD’箭头指向的路径渗入到封闭的LED空间内,影响LED封装产品的性能。
实用新型内容
为解决现有技术的LED封装结构中,外部湿气渗入到LED芯片所在的封闭空间中影响LED封装产品性能的问题,本实用新型提供一种LED封装结构,包括LED芯片、导线框、外壳,所述导线框设于所述外壳的壳体内,所述导线框包括第一金属侧壁、第二金属侧壁及底面,所述第一金属侧壁和所述第二金属侧壁分别位于所述底面的两侧,所述LED芯片设于所述底面,所述第一金属侧壁表面和所述第二金属侧壁表面设有具有高反射率的塑料层,且所述塑料层沿所述第一金属侧壁表面和所述第二金属侧壁表面向远离所述底面方向延伸,并与所述外壳接合。
优选地,所述外壳采用具有高反射率的塑料制成,且所述外壳与所述第一金属侧壁表面和所述第二金属侧壁表面设置的具有高反射率的塑料层一体成型。
优选地,在所述第一金属侧壁表面和所述第二金属侧壁表面设置的具有高反射率的塑料层为由聚邻苯二甲酰胺制成的塑料层。
优选地,所述外壳为由聚邻苯二甲酰胺材料制成的壳体,所述外壳与所述第一金属侧壁表面和所述第二金属侧壁表面设置的由聚邻苯二甲酰胺制成的塑料层一体成型。
优选地,所述导线框包括第一金属电极、第二金属电极,所述第一金属电极、所述第二金属电极彼此断开,分别连接到外部电源的正、负极,且所述第一金属电极、所述第二金属电极通过二金属导线连接所述LED芯片的正、负电极。
优选地,在所述第一金属侧壁表面和所述第二金属侧壁表面设置的具有高反射率的塑料层为由聚酰亚胺制成的塑料层。
优选地,所述外壳与所述导线框的所述底面构成封闭空间,所述封闭空间内填充有透明树脂。
优选地,所述外壳的被LED芯片发出的光线照射的侧面上设置具有高反射率的金属镀层。
优选地,所述第一金属侧壁、所述第二金属侧壁和所述底面形成一凹槽。
优选地,所述凹槽的形状为圆台形,其中,所述底面为圆台的上底,所述凹槽的开口为圆台的下底,所述圆台的上底长度小于所述圆台的下底长度。优选地,所述外壳采用具有高反射率的塑料制成,且所述外壳与所述第一金属侧壁、所述第二金属侧壁设置的具有高反射率的塑料层一体成型。
本实用新型的LED封装结构,通过在导线框的金属侧壁设置具有高反射率的塑料层,减小了LED直接照射在金属侧壁造成的光通量的损失。
附图说明
图1是现有技术中导线框设有平面结构的LED封装结构的示意图。
图2是现有技术中导线框具有凹部结构的LED封装结构的示意图。
图3是本实用新型LED封装结构的较佳实施方式的示意图。
本实用新型目的的实现、功能特点及优点将结合实施例,参照附图做进一步说明。
具体实施方式
以下将结合附图及实施方式,对实现本实用新型目的的技术方案作详细说明。应当理解,此处所描述的具体实施方式仅仅用以解释本实用新型,并不用于限定本实用新型。
请参照图3,其为本实用新型LED封装结构的较佳实施方式的示意图。该LED封装结构100包括:LED芯片110、导线框120、外壳130和透明树脂(图未示)。导线框120设于外壳130的壳体内,LED芯片110设于导线框120表面。其中,导线框120包括第一金属电极120a、第二金属电极120b,该第一、第二金属电极120a、120b彼此断开,分别连接到外部电源(图中未示出)的正、负极。导线框120的第一、第二金属电极120a、120b通过二金属导线140与LED芯片110的正、负电极电连接。
导线框120的结构包括第一金属侧壁121、第二金属侧壁122及底面123,第一金属侧壁121、第二金属侧壁122和底面123构成一个凹槽,第一金属侧壁121和第二金属侧壁122分别位于底面123的两侧。LED芯片110设于底面123上。其中第一金属侧壁121设于第一金属电极120a,第二金属侧壁122设于第一金属电极120b,底面123由第一、第二金属电极120a、120b一端弯折在同一平面内相向延伸构成。外壳130用于密封LED芯片110,与导线框120的底面123形成封闭空间,在封闭空间中填充有透明树脂。
在导线框120的第一金属侧壁121表面、第二金属侧壁122表面设有具有高反射率的塑料层131、132,且塑料层131、132沿第一金属侧壁121表面、第二金属侧壁122表面向远离底面123方向延伸,并与外壳130接合。这样,如图3所示,虽然外界湿气仍有可能沿着虚线EE’箭头所指的路径和虚线FF’箭头所指的路径进入封闭空间内,但是上述外界湿气到达LED封装结构的封闭空间的路径比现有技术的路径更长,且路径更曲折,因而,外界湿气要进入封闭空间的难度较大,从而有效避免外界湿气渗入封闭空间内对LED芯片的性能带来影响,提高了LED封装产品的信赖度。
进一步地,外壳130也采用具有高反射率的塑料制成,且外壳130与覆盖导线框120的第一金属侧壁121表面、第二金属侧壁122表面的具有高反射率的塑料层131、132一体成型,可以提高LED封装结构的封闭空间的密封性能,有效地防止外界湿气的侵入,更有效地避免外界湿气渗入封闭空间内对LED芯片的性能带来影响,提高了LED封装产品的信赖度。
在一个实施例中,在导线框120的第一金属侧壁121表面、第二金属侧壁122表面设置的具有高反射率的塑料层131、132为由聚邻苯二甲酰胺(PPA,Polyphthalamide)制成的塑料层或由聚酰亚胺(polyimide)制成的塑料层。
进一步地,外壳130也是由聚邻苯二甲酰胺材料制成的壳体。外壳130与覆盖导线框120的第一金属侧壁121表面、第二金属侧壁122表面的由聚邻苯二甲酰胺制成的塑料层131、132一体成型。外壳130与由聚邻苯二甲酰胺制成的塑料层131、132可采用常见的模具成型方式一体成型,如采用射出成型的方式一体成型,这样可降低产品的制造成本。
因此,相较于现有技术,本实用新型的LED封装结构通过在导线框120的第一金属侧壁121表面、第二金属侧壁122表面设置具有高反射率的塑料层131、132,LED芯片110发出的光线直接照射到具有高反射率的塑料层131、132上,并被反射出LED封装结构的封闭空间外,减少了LED直接照射在金属侧壁上造成的光通量的损失。
当然,本实用新型并不局限于上述较佳实施方式所揭示的内容,例如,可对LED封装结构内部进行优化,将第一金属侧壁121、第二金属侧壁122和底面123构成的凹槽的形状为圆台形,其中,底面123为圆台的上底,凹槽的开口为圆台的下底,圆台的上底长度小于圆台的下底长度,以便光线易于射出。另外,LED芯片又如在外壳的被LED芯片发出的光线照射的侧面上设置高反射率的金属镀层,如设置镀银层。
凡是利用本实用新型说明书及附图内容所作的等效结构或流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本实用新型的专利保护范围内。
Claims (10)
1.一种LED封装结构,包括LED芯片、导线框、外壳,所述导线框设于所述外壳的壳体内,所述导线框包括第一金属侧壁、第二金属侧壁及底面,所述第一金属侧壁和所述第二金属侧壁分别位于所述底面的两侧,所述LED芯片设于所述底面,其特征在于,所述第一金属侧壁表面和所述第二金属侧壁表面设有具有高反射率的塑料层,且所述塑料层沿所述第一金属侧壁表面和所述第二金属侧壁表面向远离所述底面方向延伸,并与所述外壳接合。
2.根据权利要求1所述的LED封装结构,其特征在于,所述外壳采用具有高反射率的塑料制成,且所述外壳与所述第一金属侧壁表面和所述第二金属侧壁表面设置的具有高反射率的塑料层一体成型。
3.根据权利要求2所述的LED封装结构,其特征在于,在所述第一金属侧壁表面和所述第二金属侧壁表面设置的具有高反射率的塑料层为由聚邻苯二甲酰胺制成的塑料层。
4.根据权利要求3所述的LED封装结构,其特征在于,所述外壳为由聚邻苯二甲酰胺材料制成的壳体,所述外壳与所述第一金属侧壁表面和所述第二金属侧壁表面设置的由聚邻苯二甲酰胺制成的塑料层一体成型。
5.根据权利要求1所述的LED封装结构,其特征在于,所述导线框包括第一金属电极、第二金属电极,所述第一金属电极、所述第二金属电极彼此断开,分别连接到外部电源的正、负极,且所述第一金属电极、所述第二金属电极通过二金属导线连接所述LED芯片的正、负电极。
6.根据权利要求1所述的LED封装结构,其特征在于,在所述第一金属侧壁表面和所述第二金属侧壁表面设置的具有高反射率的塑料层为由聚酰亚胺制成的塑料层。
7.根据权利要求1所述的LED封装结构,其特征在于,所述外壳与所述导线框的所述底面构成封闭空间,所述封闭空间内填充有透明树脂。
8.根据权利要求1所述的LED封装结构,其特征在于,所述外壳的被LED芯片发出的光线照射的侧面上设置具有高反射率的金属镀层。
9.根据权利要求1所述的LED封装结构,其特征在于,所述第一金属侧壁、所述第二金属侧壁和所述底面形成一凹槽。
10.根据权利要求9所述的LED封装结构,其特征在于,所述凹槽的形状为圆台形,其中,所述底面为圆台的上底,所述凹槽的开口为圆台的下底,所述圆台的上底长度小于所述圆台的下底长度。
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CN2011201362834U CN202094168U (zh) | 2011-05-03 | 2011-05-03 | Led封装结构 |
PCT/CN2011/077013 WO2012149698A1 (zh) | 2011-05-03 | 2011-07-09 | Led封装结构及液晶显示器 |
US13/375,229 US20130010226A1 (en) | 2011-05-03 | 2011-07-09 | Led packaging structure and liquid crystal display |
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CN2011201362834U CN202094168U (zh) | 2011-05-03 | 2011-05-03 | Led封装结构 |
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Cited By (2)
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CN103872219A (zh) * | 2014-03-18 | 2014-06-18 | 深圳市瑞丰光电子股份有限公司 | 一种led封装支架及led发光体 |
CN104064656A (zh) * | 2014-06-25 | 2014-09-24 | 晶科电子(广州)有限公司 | 一种具有良好防潮性能的led支架及其led器件和制备方法 |
Families Citing this family (1)
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KR101483010B1 (ko) * | 2013-07-29 | 2015-01-19 | 주식회사 굿엘이디 | Led 패키지 |
Family Cites Families (8)
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KR100567546B1 (ko) * | 2002-06-24 | 2006-04-05 | 서울반도체 주식회사 | 핑크색 발광 다이오드 및 그 제조 방법 |
EP1554762B2 (en) * | 2002-10-15 | 2014-04-30 | Solvay Specialty Polymers USA, LLC. | Anti-yellowing polycondensation polymer compositions and articles |
TWI241034B (en) * | 2004-05-20 | 2005-10-01 | Lighthouse Technology Co Ltd | Light emitting diode package |
KR100665216B1 (ko) * | 2005-07-04 | 2007-01-09 | 삼성전기주식회사 | 개선된 측벽 반사 구조를 갖는 측면형 발광다이오드 |
JP2008060344A (ja) * | 2006-08-31 | 2008-03-13 | Toshiba Corp | 半導体発光装置 |
US7968900B2 (en) * | 2007-01-19 | 2011-06-28 | Cree, Inc. | High performance LED package |
JP2008244143A (ja) * | 2007-03-27 | 2008-10-09 | Toshiba Corp | 半導体発光装置の製造方法 |
CN201134429Y (zh) * | 2007-12-27 | 2008-10-15 | 成都绿洲电子有限公司 | 一种led点阵模块 |
-
2011
- 2011-05-03 CN CN2011201362834U patent/CN202094168U/zh not_active Expired - Lifetime
- 2011-07-09 WO PCT/CN2011/077013 patent/WO2012149698A1/zh active Application Filing
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Cited By (4)
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CN103872219A (zh) * | 2014-03-18 | 2014-06-18 | 深圳市瑞丰光电子股份有限公司 | 一种led封装支架及led发光体 |
CN103872219B (zh) * | 2014-03-18 | 2016-09-14 | 深圳市瑞丰光电子股份有限公司 | 一种led封装支架及led发光体 |
CN104064656A (zh) * | 2014-06-25 | 2014-09-24 | 晶科电子(广州)有限公司 | 一种具有良好防潮性能的led支架及其led器件和制备方法 |
CN104064656B (zh) * | 2014-06-25 | 2017-11-17 | 广东晶科电子股份有限公司 | 一种具有防潮性能的led支架及其led器件和制备方法 |
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