TW476941B - Magnetic recording media with antiferromagnetically coupled ferromagnetic films as the recording layer - Google Patents
Magnetic recording media with antiferromagnetically coupled ferromagnetic films as the recording layer Download PDFInfo
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- TW476941B TW476941B TW089117506A TW89117506A TW476941B TW 476941 B TW476941 B TW 476941B TW 089117506 A TW089117506 A TW 089117506A TW 89117506 A TW89117506 A TW 89117506A TW 476941 B TW476941 B TW 476941B
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 110
- 230000005294 ferromagnetic effect Effects 0.000 title claims abstract description 89
- 238000010168 coupling process Methods 0.000 claims abstract description 32
- 238000005859 coupling reaction Methods 0.000 claims abstract description 32
- 125000006850 spacer group Chemical group 0.000 claims abstract description 32
- 230000008878 coupling Effects 0.000 claims abstract description 19
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 10
- 239000000956 alloy Substances 0.000 claims abstract description 10
- 230000005316 antiferromagnetic exchange Effects 0.000 claims abstract description 5
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 17
- 230000005415 magnetization Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 230000005381 magnetic domain Effects 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 230000005307 ferromagnetism Effects 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 230000001568 sexual effect Effects 0.000 claims description 3
- 239000010948 rhodium Substances 0.000 claims 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 2
- 229910052703 rhodium Inorganic materials 0.000 claims 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 229910000531 Co alloy Inorganic materials 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 229910000831 Steel Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 239000010959 steel Substances 0.000 claims 1
- 230000009467 reduction Effects 0.000 abstract description 3
- 238000013500 data storage Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 78
- 239000010410 layer Substances 0.000 description 34
- 230000007704 transition Effects 0.000 description 14
- 239000002356 single layer Substances 0.000 description 9
- 239000002131 composite material Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000005389 magnetism Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000003302 ferromagnetic material Substances 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 241001424309 Arita Species 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 241000237503 Pectinidae Species 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 102000045222 parkin Human genes 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 235000021251 pulses Nutrition 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 235000020637 scallop Nutrition 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/68—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent
- G11B5/70—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer
- G11B5/708—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by addition of non-magnetic particles to the layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/021—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material including at least one metal alloy layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/40—Coatings including alternating layers following a pattern, a periodic or defined repetition
- C23C28/42—Coatings including alternating layers following a pattern, a periodic or defined repetition characterized by the composition of the alternating layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/676—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having magnetic layers separated by a nonmagnetic layer, e.g. antiferromagnetic layer, Cu layer or coupling layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/676—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having magnetic layers separated by a nonmagnetic layer, e.g. antiferromagnetic layer, Cu layer or coupling layer
- G11B5/678—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having magnetic layers separated by a nonmagnetic layer, e.g. antiferromagnetic layer, Cu layer or coupling layer having three or more magnetic layers
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
Description
476941 五、發明說明(1) 概略而言,本發明係關磁性 性高密度媒體。 性。己錄媒體,特別係關熱穩定 發明背景 性記錄媒體例如^^的磁性 記錄媒體。於磁性層的 1各 成。磁化域間的變遷過渡表示=粒組 IBM公司的美國專利第4 78 ,彔的貝枓的位兀」。 類型的習知硬碟。 ,和5,5 2 3,1 7 3號描述此種 位= 的儲存密度的增高,殘存磁化心(每單 :里與磁性層厚度t的乘積下降同 μ"/Λ二 性或橋頌磁力⑷增高。如此導致
Mrt/Hc比值的下降。為了 守·双 縮小,但僅能至某個極限,々因在=、’磁f層厚度七可 性衰減,因而仿忠Aw曰 層將具有較大磁 性晶粒的熱穩定性大半係:二活化(超順磁效應)。磁 各向異性常螯 v ’、 u /、疋,此處、為該層的磁性 小,V亦減小若^ 常㈣機操作條件曰下將不支再太/定則儲存的磁性資訊於正 高較向異性材料(較 ! :!;7r}"" ^ ;f" 種類似的解決之道係對一固定層厚度降==: 476941 五、發明說明(2) 入的襟頑磁力所限。另-項解決之道 故增加磁性晶粒的有效磁性容積卜 兩座古括4 = 有仏琥對雜訊比(SNR)。 而晋百一種磁性記錄媒體,1蔣*揸 ^ 日车仂&女@ ^ ^ < ,、將支杈極尚密度記錄,同 守仍保有良好熱穩定性和SNR。 發明概诚 本發明為:種磁性記錄媒體,《中該磁性記錄層具有至 夕一鐵磁性膜,其係以反鐵磁性方式耦合在一起交叉一非 鐵磁性間隔膜。由於二反鐵磁性_合膜之磁矩係以逆平行 t向取向,故記錄層的淨殘存磁化—厚度積(Mrt)為二鐵磁 L „的差。此項Mrt值的減少可無需降低記錄媒體 一…、釔定f生即可達成’原因在於二反鐵磁性耦合膜的晶粒 t積係以組合方式加成。磁性記錄媒體也可以較低去磁化 場達成遠^尖銳的磁性變遷過渡,結果導致媒體的線性位 几岔度較咼。於一具體實施例中,磁性記錄媒體包含二鐵 磁性膜,各自為一濺鍍沈積CoPtCrB合金之晶粒薄膜,而 由一Ru間隔膜隔開,該間隔膜具有一種厚度可使二 CoPtCrB膜間的反鐵磁性交換耦合增至最大。二鐵磁性膜 之一膜製作成比另一膜更厚,但其厚度經選擇,故於零外 加磁場時’淨磁矩為低,但非零。 參照後文洋細說明連同附圖將可更完整瞭解本發明之 質與優點。 之簡單說明 圖1為根據本發明之一記錄媒體中之反鐵磁性(AF)耦合
476941 五、發明說明(3) 〜- 磁性記錄層之示意剖面圖。 圖2 A為A F -耦合層之示意說明圖,舉例說明該鐵磁性膜 於一被記錄的磁性變遷過渡的磁矩取向。 、 圖2B為咼於AF_耦合層和一單層(SL)媒體之磁場計算值 呈得自變遷過渡之下方執跡位置之函數之線圖。 % 圖3為本發明之磁碟結構之示意剖面圖,舉例說明基 材、底層、A F -輕合層之薄膜、和保護性頂層。 圖4為帶有圖3之AF -耦合層之構造的磁滯回路。 發明之詳細説明 本舍明之磁性§己錄媒體具有一記錄層,其係由二層戍多 層鐵磁性膜組成,該等薄膜係藉一或多張非鐵磁性卩^鬲二 與其鄰近鐵磁性膜做反鐵磁性(AF)交換耦合。此係示意顯 示於圖1 ’記錄層10係由二鐵磁性膜12,14組成,二膜^系、、 由二非,磁性間隔膜16隔開。非鐵磁性間隔膜16的厚度與 組成係選擇為二毗鄰薄膜丨2,1 4的磁矩2 2,2 4係經由該非 鐵磁性間隔膜1 6做…-耦合,且於零外加磁場時為逆平 行0
鐵磁性膜透過非鐵磁性過渡金屬間隔膜做AF-耦合已經 過徹,研,且述於參考文獻。一般而言,隨著間隔膜厚度 的加厚’交換耦合由鐵磁性振盪至反鐵磁性。此種對選定 材料組合的振盪耦合關係係由Parkin等人述於「金屬超晶 格結構的交換耦合與磁阻的振盪· c〇/Rli,C0/Cr和 e / C r」’物理學綜論函件,6 4期2 0 3 4頁(1 9 9 0年)。材料 組合包含由鈷、鐵、鎳及其合金組成的鐵磁性膜,例如鎳
476941 五、發明說明(4) (:),鎳鉻(:r;和2二;以及非鐵磁性間隔膜例如釘 各別此等材料组人 #:(二)丄銅(Cu)及其合金。對此 非已知),故非鐵°磁/Ί關係必須測定(即使並 、 故非鐵磁性間隔膜的厚度經選擇傀谂仅八 鐵磁性膜間的反鐵磁性耦合關係。振盪時短係"於― 鐵磁性間隔膜材料決定,但振盈耗合的強度和:::f非 鐵磁性材料和交界面品質決$。鐵 據 ==於旋轉閥型巨大磁_)記錄 、二;膜Γ等膜之磁矩係於記錄頭操= 於⑽專利=17 7 —起。此種類型旋轉間型結構例如述 二種用二,市,隹77和5, 46 5, 1 85號。’ 185號專利案說明 種用於許夕市售旋轉閥GMR頭的結構,亦即—声 ::::鐵磁性層’具有多張鐵磁㈣,其磁矩W性輕 口在起且於磁頭操作期間保持穩定。 以^二41別具有磁矩值計11!和壯“2(因殘存磁化計係 ^/n λ性材料的磁矩表示,故乘積Mrt為對厚 ς ,二,a而言每單位面積的磁矩)。對此種AF_轉合結 ,田比鄰膜12,14分別的磁矩22,24的取向係逆平行 排背,如此以破壞性加成而降低複合層丨〇磁 ”表示彼此交又AF-輕合層16正位於上方和下方的:員別磁 丨的兹矩取向。於無外加磁場存在下,當鐵磁性膜1 4沈積 於媒體基材上日守,膜將具有晶粒結構,而有多個破鄰晶粒 耦合^ 一起而形成各別的磁域。於無外加磁場存在下,此 種於膜14的磁域的磁矩大致為隨機定向。然後間隔膜或
第10頁 476941 五、發明說明(5) A F - _合膜1 6直接沈積於鐵磁性膜1 4上至正曰 次,第二鐵磁性膜12直接沈積於AF—耦合 f度二其 性膜1 2的晶粒成長時,晶粒將形成磁域有 田鐵磁 平行於鐵磁性膜14的磁矩取向(其恰 =取向係逆 鐵磁性膜12,14的鐵磁性材料類別以及严二,16) °一 選擇,故於零外加磁場的淨磁矩將為低但二=。斟同t2經 示案例而言,結構的Mrt係以t # - 7子圖1顯 與A η山” 1 1表不。於較佳且卿 貝鉍例中,ΜΓι tl須大於Mr2t2。此項條件夢 肢 ^ ^ ^ ^ mi 2 - 14 X ^ 11, # A Λ ^ 性膜的磁化(每單位容積材料的磁)可 5鐵磁 磁性膜的結構。 γ有夕間隔版和多鐵 件i發多項優:形成為單層鐵磁性材料層的磁性層的 :° * :超薄磁性層或低磁化合金獲得低殘存磁 =此避免前述熱不穩性與寫入困難等問題。若圖 :性層比較單由膜丨2 (舉例)組成的單層添加A F _耗合 '=賴可降«合結構的淨磁矩,而未減小和 減少腠1 2的磁化。 &次 1 Πί :ί 2熱穩Ϊ比單一磁性層提升,原因在於膜12和 θθ " 向異性實質上為單轴性,如此即使膜1 2,1 4的 :^逆平#,仍可做組合加成。結果所得耦合系統KuV 、思疋性參數可表示為“^^以^^^^〜^’此處11 屮V!和Kii2 V2分別為膜1 2,1 4之典型晶粒的各向異性能。複
第11頁 五、發明說明(6) 合穩定性參數KuV = KUlV1+KU2V2的上限將可對下、+.安 成:當膜12和14的磁性晶粒強力耦合且丘用一丘例達 性軸向時。複合結構(層10)的磁性容積又豆央向異 性)將近似膜! 2和14的交換耗合晶粒容積之總和m 之磁矩乃膜1 2 , 1 4的個別磁矩差里。_ ' 、、 “ ^ 1 0 ^曝可提供-種機構俾增加有效:厚:性鐵 定值广b鐵磁性膜可含有極小直徑^ α 根據本發明之AF-耦合媒體示意顯示於圖^,帶 或寫入磁性變遷過渡。加號(+ )和減號(_)表示由變遷過妒 ^ 士的磁極。高於AF-耦合媒體表面丨〇毫微米的縱向磁場X r值(Ηχ)於圖2B顯示為X方向或距變遷過渡下方軌跡位 置之函數。二膜12,14之磁矩和厚度值以及AF—耦合層的 Mrt計算值列舉於Μ2β。圖“也顯示來自單層(sl)媒具 有類似Mr t)之變遷過渡造成的縱向磁場模式計算。厚度值 (七1和% )係選擇尖峰縱向磁場對AF —耦合媒體比較儿媒體而 言為相等。AF -耦合媒體的鐵磁性材料之總厚度較厚2. 7 倍。因此AF -耦合媒體的熱穩定性應比SL媒體更高。縱場 側面圖於下方軌跡方向對AF—耦合媒體而言衰變較快,結 果導致較尖銳的變遷過渡。如此表示變遷過渡可比儿媒體 間隔更緊密,因而對媒體獲得較高線性位元密度。雖然未 顯示於圖2B,但計算也顯示AF-耦合媒體内部來自變遷過 渡的去磁場下降比SL媒體更快速。此外,去磁場的幅度和 符號係依據媒體内部的γ位置(參考圖2 A)決定。如此對媒
第12頁 476941 五、發明說明(Ό 體内部的某個γ位置而t,去磁場降至零。小型去磁場合 過渡將其本身去磁化。 ③、渡,而造成遷 本發明已經使用習知coptcrB縱向記錄媒體合全用於鐵 磁性膜驗證。一結構例顯示於圖3。該結構係使用抑知濺 鍍沈積設備和方法製造。形成結構的薄膜生長於鉻白底層、 VA鉻Λ層係、沈積於—請磁碟枉料基材上帶有二‘鎳 -¾表面塗層上,基材溫度為約2〇()t:。鐵磁性膜為 =ΐ V^ 1圖1膜12,頂膜係比對應圖1膜14的底鐵磁 、更子(1 2笔微米比7毫微米)。非鐵磁性間隔膜為〇 6 高膜。如同單層媒體般’較佳使用-晶粒鐵磁性 的磁性晶粒而降低媒體雜訊,間隔膜厚度 擇為於弟一反鐵磁性峰呈振盪交換耦合關係。用於此 例,各C〇PtCrB鐵磁性膜包含一交界面薄膜,主要係〇 膜交界面組成。超薄钻膜增加鐵磁性膜與Ru =的父界面磁矩,結果導致反鐵磁性耦合。纟未結合鈷 ς =缚膜於C〇PtCrB鐵磁性膜曾經驗證具有反鐵磁性交 圖4顯不對圖3結構於τ =35〇度κ測量所得主磁滯回路 殘存磁滯回路(虛線)。首先參照殘存磁滯回路, 二於正磁場飽和AF-粞合層及然後外加增高的反相: 存回路顯示Mrt = 〇. 21, 、 :卜加負場後量測該層的殘存磁矩獲得。殘在 ”、、殘存磁矩相對於反相場幅度作圖。對本試 存々和-w 〇 ,殘 =3. 2 k Ο <
Acr 以及 H/694l 五、發明說明(8)
二〇· 92於室溫,此處S,為於殘在门妨 值。供比較用,以類似方式生長的丨° ,H、cr的斜率測量 合金單層具有性質Mrt =〇. 38 , Η二=微米相同CoPtCrB 〇·76於室溫。如此,AF_輕合媒k〇e,以及S’ = 媒體厚度達成顯著較低的Mrt。 4使用較大磁性記錄 其次參照圖4之主磁滯回路,成對〜一 層的鐵磁性膜於不同點於磁滯回路的"則碩彳日不〇''耦合 向增高(箭頭3 0 ,32 )。對於大的外加° 。外加磁場於正 舌,反鐵磁性耦合被克服,而二鐵磁^ 3 0 0 0 〇e)而 力口磁場(箭頭42,44)。當外加磁場低(,頭的^皆^外 鐵磁性膜的磁矩反相而變成逆平於引 吟,較薄底 礎矩(箭頭52,54),以及車父厚的頂鐵磁性膜的 降Lt ^ 逆十仃於外加磁場且淨磁矩下 °e) 、木自跨Ru膜的耦合)。數值_ T /u ^ 鐵磁性膜的磁化盘厚产…::度而M°t2分別為底 為底膜ί Γ 鐵磁性膜(Hc2)所需矯頑磁場。hc2 用:、:矯:磁場,假設並無與頂鐵磁性膜的交換交互作 維持Hex2>Hc2。 尽度以及AF,合膜須設計成可 i飽和後的殘磁狀態得、由平行磁場方向的頂鐵磁性 逆平行於正場方向(箭頭52,⑷的底鐵磁性 直至頂辟:r。於反向外加磁場(箭頭3 6 ),磁性狀態穩定 至頂鐵磁性膜的磁矩反相,且二膜的磁矩平行且對齊於
第14頁 4/0V41 五、發明說明(9) 負飽和態(箭頭6 2,6 4 )為I 1 / 。頂鐵磁性膜的磁矩的切換決
Hexi為作用於頂鐵磁性膜的六拖& +屯表不此慝 Γ=頑磁%,假設與底鐵磁性膜間無交互作 持複人社構』H性膜和A F -耦合膜的性質應設計成可維 由一殘磁態(箭頭5 2,5 4 ) 5 a & 你、g、A 士日日 )至久一殘磁態(箭頭72,74)的路 ^通過一中間狀態,此處二膜磁矩係平行(箭頭62,64)。 據本發明之媒體=Vr Α搞合結構相反,於根 糕人/ ^ 鐵途性馭的磁矩並未跨AF-耦合膜剛性 4' Λ" ^ ^ ^ ^= ® m ^ J, F耦合膜的所需特色,亦即相對於飽和 石兹化為低殘存磁化。 行對輕合膜的記錄性能測試係使用習知縱向記錄頭進 =k號對雜訊比測量值決定於95〇〇通量變化每毫 (fc/mm)的媒體S NR為31 9分 、 ^NA^QRnn , / ·9刀貝,此處S0為隔離脈衝振幅, :lAF fc/關記錄密度的積分媒體雜訊。此等結果 鲂也AF-耦合磁性層可用於資料儲存。 相m明之AF—耦合媒體也曾經驗證用於含與一 薄膜’含及未含-或…交界面層,以及 各銘鉻翻钽鐵磁性膜的結構。 參照較佳具體實施例顯示與說明本發明, 應了解可未恃離本發明之精髓、範圍、和教示 式與細節上做出多種變更。如&,此處揭示之發明
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Claims (1)
- ,且包含 性膜上, 膜係跨間 之媒體, 膜上,以 ^生膜係跨 之媒體, 磁性膜具 膜的每單 之媒體, 及其中11 之媒體, 及其中tl 之媒體, ,銥(Ir) 〇 之媒體, 其合金組 476941 六、申請專利範圍 1 · 一種磁性記錄媒體,包含 一基材; 一磁性記錄層於該基材上 非鐵磁性間隔膜於第一鐵磁 於間隔膜上,該第二鐵磁性 膜做反鐵磁性交換耦合。 2 ·如申請專利範圍第1項 鐵磁性間隔膜於第二鐵磁性 第二間隔膜上,該第三鐵磁 性膜做反鐵磁性交換搞合。 3 ·如申請專利範圍第1項 有厚度11和磁化μ 1,第二鐵 以及其中第一和第二鐵磁性 和(Μ 2 X 12 )彼此相異。 4 ·如申請專利範圍第3項 性膜係由相同材料製成,以 5 ·如申請專利範圍第3項 性膜係由不同材料製成,以 厚度。 6·如申請專利範圍第1項 自釕(Ru) ’ 鉻(Cr),铑(Rh) 成的組群中之一種材料製成 7 ·如申請專利範圍第1項 性膜係由選自麵、鐵、錄及 —第一鐵磁性膜,一 以及一第二鐵磁性膜 隔膜而與第一鐵磁性 進一步包含一第二非 及一第三鐵磁性膜於 間隔膜而與第二鐵磁 其中第一鐵磁性膜具 有居度12和磁化Μ 2, 位面積磁矩(Μ 1 X 11 ) 其中第一和第二鐵磁 係與12相異。 其中第一和第二鐵磁 與t2實質上具有相等 其'中該間隔膜係由選 ’鋼(Cu)及其合金組 其中弟一和第二鐵磁 成的組群中之一種材 ❿476941 六、申請專利範圍 料製成。 8. 如申請專利範圍第1項之媒體,其中第一鐵磁性膜包 括一交界面薄膜,其主要係由位於第一鐵磁性膜與間隔膜 之交界面的始組成。 9. 如申請專利範圍第1項之媒體,其中第二鐵磁性膜包 括一交界面薄膜,其主要係由位於第二鐵磁性膜與間隔膜 之交界面的始組成。 10. 如申請專利範圍第1項之媒體,進一步包含一底層 位於基材上且係介於基材與磁性記錄層間。 11. 如申請專利範圍第1項之媒體,進一步包含一保護 性頂層形成於磁性記錄層上方。 12. —種磁性記錄碟,包含: 一基材; 一底層於該基材上; 一磁性記錄層位於該底層上,且包含一第一始合金鐵磁 性膜,一非鐵磁性間隔膜其係由選自釕(Ru ),鉻(Cr),铑 (R h ),銀(I r ),銅(C u )及其合金組成的組群中之一種材料 製成,該間隔膜係形成於第一鐵磁性膜上且與其接觸,以 及一第二鈷合金鐵磁性膜係形成於間隔膜上且與其接觸, 該間隔膜之厚度係足以誘生第二鐵磁性膜與第一鐵磁性膜 跨間隔膜作反鐵磁性交換耦合;以及 一保護性頂層形成於磁性記錄層上。 13. 如申請專利範圍第1 2項之碟,其中第一鐵磁性膜為 晶粒膜,具有多個磁域,各個磁域包含多顆晶粒;其中第第18頁 "f/0941 六、申請專利範圍 二鐵磁性獏為晶粒膜,具有多 晶粒;以及其中第二鐵磁性 ^各個磁域包含多顆 性膜的關聯磁域之磁矩直接跨;兹域的磁矩係與第一鐵磁 合。 ^膜作逆平行反鐵磁性耦 14,如申請專利範圍第12項之碟 ★ 鐵磁性間隔膜其係形成於第進一步包含一第二非 公第三鐵磁性膜係士且與其接觸,以 膜跨第二間隔膜作反鐵磁性交;::磁性膜與第二鐵磁性 15·如申請專利範圍第1 2項之雄口甘山 有厚度tl和磁化M1,第-鎧磁票,,、中第一鐵磁性膜具 以;5豆㈣1 膜具有厚度t2和磁化M2, 以及其中弟一和第二鐵磁性膜的 和(M2x t2)彼此相異。、母早位面積磁矩(Mix tl) 16、 :申請專利範圍第15項之碟,其中第一和第二鐵磁 性膜係由相同材料製《,以及其中tl係與t2相昱。 17. 如申請專利範圍第15項之碟,其中第―和第二鐵磁 性膜係由不同材料製成,以及其中tl與七2實質上具有相等 厚度。 18、 如申,專利範圍第15項之碟’其中第—鐵磁性膜包 括又界面薄膜,其主要係由位於第一鐵磁性膜與間隔膜 之交界面的鈷組成。 19. 如申請專利範圍第15項之碟,其中第二鐵磁性膜包 括一交界面薄膜,其主要係由位於第二鐵磁性膜與間隔膜 之交界面的鈷組成。
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US6280813B1 (en) | 2001-08-28 |
GB2355018A (en) | 2001-04-11 |
JP3497458B2 (ja) | 2004-02-16 |
KR100370441B1 (ko) | 2003-01-29 |
KR20010039979A (ko) | 2001-05-15 |
US6594100B2 (en) | 2003-07-15 |
MY126751A (en) | 2006-10-31 |
US20010038931A1 (en) | 2001-11-08 |
GB2355018B (en) | 2004-02-11 |
JP2001148110A (ja) | 2001-05-29 |
GB0015023D0 (en) | 2000-08-09 |
CN1291769A (zh) | 2001-04-18 |
CN1189868C (zh) | 2005-02-16 |
SG90753A1 (en) | 2002-08-20 |
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