CN1291769A - 以反铁磁耦合的铁磁膜作为记录层的磁性记录介质 - Google Patents

以反铁磁耦合的铁磁膜作为记录层的磁性记录介质 Download PDF

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CN1291769A
CN1291769A CN00129096A CN00129096A CN1291769A CN 1291769 A CN1291769 A CN 1291769A CN 00129096 A CN00129096 A CN 00129096A CN 00129096 A CN00129096 A CN 00129096A CN 1291769 A CN1291769 A CN 1291769A
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马修·J·凯里
埃里克·E·富勒顿
布鲁斯·A·格尼
哈尔·J·罗森
曼弗雷德·E·沙贝斯
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Abstract

用于数据存储的磁性记录介质利用一种至少有两层通过一个非铁磁隔离膜反铁磁耦合到一起的铁磁膜的磁性记录层。两层反铁磁耦合膜的磁矩反平行取向。在磁性记录硬盘的应用中,磁性记录介质包括两个铁磁膜,每个膜是溅射沉积的CoPtCrB合金粒状膜,由一定厚度的Ru隔离膜隔开以增大两个CoPtCrB膜之间的反铁磁交换耦合。其中一个铁磁膜比另一个厚,厚度的选择使得在施加零磁场处的净磁矩很小但不为零。

Description

以反铁磁耦合的铁磁膜作为记录层的磁性记录介质
本发明总的涉及磁记录介质，尤其涉及热稳高密度介质。
传统的磁记录介质如硬盘驱动器中的磁记录盘主要使用一个粒状铁磁层如溅射沉积的钴铂合金作为记录介质。磁性层中的每个磁畴由许多小磁粒组成。磁畴之间的转移表示记录数据的“位”。IBM公司的美国专利US4，789，598和US5，523，173描述了这种类型的传统硬盘。
当磁记录盘的储存密度增大时，剩余磁化强度Mr(铁磁材料单位体积的磁矩)和磁性层厚度的之积减小。类似地，磁性层的矫顽场或矫顽力(Hc)增大。这导致Mrt／Hc比率的下降。为了实现Mrt的减小，可以减小磁性层的厚度t，但也只能小到一个限度，因为该磁性层将会显示出增大的磁性衰减，这种衰减归因于小磁粒的热激发(超顺磁效应)。磁粒的热稳定性很大程度上取决于KuV，这里Ku是磁性层的磁各向异性常数，V是磁粒的体积。当磁性层的厚度t减小时，V减小。如果磁性层的厚度太薄，储存的磁性信息在标准的盘驱动操作条件下将不再稳定。
解决上述问题的一种办法是改用较高各向异性的材料(较高的Ku)。但是，Ku的增大受大致等于Ku／Mr的矫顽力Hc的限制，变得太大就不能用传统的记录头写入。类似的办法是对于固定的层厚减小磁性层的Mr，但这也受可写入的矫顽力的限制。另一种办法是增加晶粒间的交换，使得磁粒的有效磁性体积V增大。但这种办法已显示出对磁性层的本征信噪比(SNR)是有害的。
所需要的此记录介质要能保持很高密度的记录而同时保持很好的热稳定性和SNR。
本发明是关于一种磁性记录介质，其中磁性记录层是至少两层通过一个非铁磁隔离膜反铁磁耦合到一起的铁磁膜。因为两层反铁磁耦合膜的磁矩反平行取向，所以记录层的净剩余磁化强度-厚度积(Mrt)是两层铁磁膜的Mrt值差。Mrt值的减小不伴有记录介质热稳定性的下降，因为在反铁磁耦合膜中建设性地增加磁粒体积。介质还能够利用减小的退磁场达到很迅速地磁转移，导致介质较高的线性位密度。在一个实施例中，磁性记录介质包括两个铁磁膜，每个膜是溅射沉积的CoPtCrB合金粒状膜，由一定厚度的Ru隔离膜隔开以增大两个CoPtCrB膜之间的反铁磁交换耦合。其中一个铁磁膜比另一个厚，厚度的选择使得在施加零磁场处的净磁矩很小但不为零。
为了进一步理解本发明的实质和优点，下面参考附图进行详细的描述。
图1是根据本发明的记录介质中反铁磁耦合的磁性膜截面图。
图2A是列举在记录的磁性转移处铁磁膜磁矩取向的AF耦合层示意图。
图2B是作为转移下方位置函数的AF耦合层和(SL)介质上算出的磁场曲线。
图3是列举基底、垫层、AF耦合中的膜以及保护涂层的本发明盘结构示图。
图4是图3所示AF耦合层结构的磁滞回线。
本发明的磁性记录介质有一个记录层，记录层由两个或多个铁磁膜形成，铁磁膜反铁磁交换耦合，相邻铁磁膜之间加入一个或多个非铁磁隔离膜。此结构示于图1，图中记录层10由两个被非铁磁隔离膜16分开的铁磁膜12、14制成。非铁磁膜16厚度和成分的选择使得相邻膜12、14的磁矩22、24选择通过非铁磁隔离膜16AF耦合并且在零电场下反平行。
铁磁膜经非铁磁转换金属隔离膜的AF耦合已得到广泛的研究和描述。通常，交换耦合随着隔离膜厚度的增加从铁磁性向反铁磁性振荡。对于选取的材料组合物的振荡耦合关系，Parkin等人在Phys．Rev．LettVol．64，p．2034(1990)的“Oscillations in ExchangeCoupling and Magnetoresistance in Metallic SuperlatticeStructures：Co／Ru，Co／Cr and Fe／Cr”中有所描述。材料组合物包括由Co，Fe，Ni及其它们的合金制成的铁磁膜如Ni-Fe，Ni-Co和Fe-Co，和非铁磁隔离膜如钌(Ru)、铬(Cr)、铑(Rh)、铱(lr)、铜(Cu)及其合金。对于这种材料组合物，振荡交换耦合关系已得到确定，如果还不知道，则非铁磁隔离膜厚度的选择应确保两铁磁膜之间的反铁磁耦合。振荡的周期依赖于非铁磁隔离材料，但振荡耦合的强度和相位还依赖于铁磁材料和界面质量。铁磁膜的振荡反铁磁耦合已被用在旋转阀门型大磁阻(GMR)记录头中设计连续磁化的反铁磁耦合膜，记录头工作期间该膜的磁矩严格地反平行耦合到一起。例如，这种旋转阀门型结构在IBM的美国专利US5，408，377和US5，465，185中有所描述。’185专利描述了一种用在许多商用旋转阀门GMR头中的结构，即一种夹层的具有铁磁膜的反平行定位的铁磁层，它的磁矩严格地耦合到一起并在记录头工作期间保持稳定。
膜12、14分别具有Mr1t1和Mr2t2的磁矩值。(因为剩余磁化强度Mr表示单位体积铁磁材料的磁矩，乘积Mrt是单位面积磁化层的磁矩与厚度t的乘积)。对于此AF耦合结构，相邻膜12、14的磁矩22、24的取向分别反平行对准，并因而破坏性地减小复合层10的磁矩。箭头22、24表示通过AF耦合膜16直接位于另一个之上或之下的每个磁畴的磁矩取向。在不施加磁畴的情况下，当把铁磁膜14沉积到介质基底上时，将有一种粒状结构，多个相邻的磁粒耦合到一起形成各个磁畴。在不施加磁畴的情况下，膜14中这些磁畴的磁矩必定随机取向。然后，沉积隔离膜或AF耦合膜16以直接校准铁磁膜14的厚度。接下来再直接在AF耦合膜16上沉积第二铁磁膜12。当铁磁膜12的磁粒生长时，将形成具有磁矩的磁畴，该磁矩直接通过AF耦合膜16与铁磁膜14的磁矩取向反平行。
选择铁磁膜12、14的铁磁材料类型和厚度t1、t2，使得在零磁畴中的净磁矩将很小但不为零。对于图1中的情形，该结构的Mrt由Mr1t1-Mr2t2给出。在优选实施例中，Mr1t1＞Mr2t2。这通过在两种膜12、14中利用同样的铁磁材料并且t1大于t2来实现，或者通过两种膜利用不同的铁磁材料来使两个铁磁膜的磁化强度(材料单位体积的磁矩)不同。图1显示了具有单层隔离膜16的两层膜结构，本发明可扩展到具有多层隔离膜和多层铁磁膜的结构。
本发明由单层铁磁材料制作磁化层有很多优点。这样无需利用超薄磁化层或低磁化强度的合金就可以得到较低的剩余磁化强度。避免了以上讨论的热稳定性和写入困难的问题。如果拿图1中的磁化层与只由膜12组成的单层相比，AF耦合铁磁膜14的加入降低了复合结构的净磁矩，而既不减小厚度，也不降低膜12的磁化强度。
因为膜12和14中磁粒的各向异性基本上是单轴的，所以与单磁化层相比复合结构的热稳定性提高，并且即使膜12和14的磁矩反平行，也可以结构性的加入。耦合系统的最终热稳定性参数KuV由Ku1V1＜KuV＜(Ku1V1+Ku2V2)给出，此处Ku1V1和Ku2V2分别是膜12和14中主要磁粒的各向异性能量。当膜12和14中的磁粒强烈耦合并共享一个公共各向异性轴方向时将达到组合物稳定性参数KuV=Ku1V1+Ku2V2的上限。决定热稳定性的组合物结构(层10)的磁化体积V将接近膜12和14中交换耦合磁粒的体积之和，而层10的磁矩是膜12和14的磁矩之差。两铁磁膜之间的反铁磁耦合提供一个增大膜厚度效应、同时减小组合物结构的净Mt值的机制。所以，铁磁膜可以包含非常小直径的磁粒并保持热稳定性。
具有记录或写入磁转换的根据本发明的AF耦合介质示于图2A。符号(+)和(-)表示从转折处出现的磁极。高出AF耦合介质表面10nm的算出的纵向场(Hx)作为X方向或转折处下方位置的函数示于图2B。两个膜12和14的磁矩和厚度以及算出的AF耦合层的Mrt列于图2B中。为了比较，图2B还表示在有类似Mrt的单层(SL)中转折处出现的纵向磁场的模型计算。选择的厚度值使得纵向磁场的峰值对于AF耦合介质和SL介质相同。AF耦合介质中铁磁材料的总厚度厚2．7倍。因此，AF耦合介质应比SL介质热稳定性更好。在下方方向纵向磁场的曲线对于AF耦合介质衰退的更快，导致更急剧的转折。这表明在SL介质中，转折可以间隔得更近。导致该介质更高的线性位密度。在图2B中没有显示计算还表明AF耦合介质中从转折处的退磁场比在SL介质中下降的更快。另外，退磁场的幅度和符号依赖于介质中的Y位置(见图2A)。所以，对于介质中的某一特定Y位置，退磁场减小为零。希望有小的退磁场，因为它们会影响其它的转折并导致转折以对自身退磁。
本发明利用传统的CoPtCrB纵向记录介质合金作为铁磁膜得以证实。该结构的一个实例示于图3。该结构利用传统的溅射沉积设备和方法制作。形成该结构的膜生长在Cr垫层上，而垫层沉积在具有镍磷(NiP)表面涂层的AIMg盘的基底上，基底温度约为200℃。铁磁膜是CoptCrB，对应于图1中膜12的顶膜比对应于图1中膜14的底铁磁膜厚(12nm比7nm)。非铁磁隔离膜是0．6nm的Ru膜。如同使用单层介质一样，利用带有绝缘磁粒的粒状铁磁材料可以有利地降低介质噪音。在振荡耦合关系曲线中的第一铁磁峰值处选择Ru膜的厚度。例如，每个CoPtCrB铁磁膜包含一个实质上由界面处0．5nm的Co与Ru膜组成的界面膜。这些超薄Co膜增大铁磁膜和Ru膜之间的界面磁矩，导致增强的反铁磁耦合。但是已经证明了无需在CoPtCrB铁磁膜中结合Co界面膜的反铁磁交换耦合。
图4表示在T=350°K时对图3结构所测得的主要的磁滞回线(实线)和剩余磁滞回线(虚线)。首先参见剩余磁滞回线，它通过在正磁场中使AF耦合层饱和并再施加增大的反向负磁场，在施加负电场之和测量层中的剩余磁矩。剩余磁滞回线是一条剩余磁矩-反向磁场幅值的曲线。对于此实例，剩余磁滞回线表示室温下Mrt=0．21，剩余矫顽磁场Hcr=3．2kOe，S’=0．92，S’是Hcr处剩余磁滞回线的斜率。为了比较起见，室温下同样CoPtCrB合金的15nm单层的类似增长具有Mrt=0．38，Hcr=2．4kOe和S’=0．76的特性。所以AF耦合介质能够以较大的总磁化层厚度实现显著减小的Mrt。
关于图4所示的主磁滞回线，一对水平箭头表示在磁滞回线的不同点AF耦合层中铁磁膜的取向。施加电场在正向(箭头30、32)增加。对于大的施加场，反铁磁耦合占上风，两个铁磁膜的磁矩均平行于施加场(箭头42、44)。当施加场(＞3000Oe)减小(箭头34)时，较薄的底铁磁膜磁矩反转并变成反平行于较厚的顶铁磁膜(箭头52、54)磁矩和反平行于施加场，净磁矩有下降。这种转换大致发生在底膜(Hex2=2000Oe)感受到的交换场，由通过Ru膜的耦合而引起。Hex2=Jex／M2t2，其中Jex是Ru隔离层的反铁磁界面交换能力密度，M2和t2分别是底铁磁膜的磁化强度和厚度。欲实现铁磁膜的反平行排列，需要Hex2超过所需的矫顽磁场以反转底铁磁膜(Hc2)。Hc2是底膜的矫顽磁场，假设与铁磁膜没有交换作用。因此，底膜的磁化特性和厚度以及AF耦合膜必须设计成保持Hex2＞Hc2。
正磁场中饱和后的剩磁状态通过平行于磁场方向的顶铁磁膜磁矩和反平行于正磁场方向(箭头52、54)的底铁磁膜磁矩给出。在反向施加磁场(箭头36)中，磁化状态稳定，直到顶铁磁膜的磁矩反转并且两个膜的磁矩在负饱和态中平行切对准(箭头62、64)。顶铁磁膜的磁矩转换决定AF耦合膜的矫顽磁场并由Hc=Hex1+Hc1给出，其中Hex1是顶铁磁膜的矫顽磁场(Hex1=Jex／M2t2)，Hc1是顶铁磁膜的矫顽磁场，假设和底铁磁膜没有作用。因此，顶铁磁膜和AF耦合膜的特性必须设计成保持组合物的Hc处于记录头所需的写入场。例如，从一个剩磁态(箭头52、54)到另一个剩磁态(箭头72、74)的路径经过一个中间态，中间态处两个膜的磁矩平行(箭头62、64)。所以，与用在旋转阀门GMR记录头中的AF耦合结构相反，用在本发明介质中的铁磁膜磁矩并不经过AF耦合膜稳固地耦合到一起，因为必须克服耦合以在介质上写入。图4的磁滞回线显示出AF耦合层的所需特征，即相对于饱和磁化强度较低的剩余磁化强度。
利用传统的纵向记录头进行在AF耦合层上的激励性能测试。信噪比的测量决定在每微米磁通量变化9500(fc／mm)处31．9dB的介质S0NR，此处S0是绝缘脉冲幅值，N是在9500fc／mm记录密度处的集中介质噪音。这些结果表明AF耦合的磁化层对数据存储的能力。
以上列举了本发明AF耦合介质对于具有和不具有一个或两个Co界面膜、具有和不具有一个或两个CoCr界面磨合CoCrPtTa铁磁膜的结构。
虽然以上已参考优选实施例对本发明进行了显示和描述，但本领域的技术人员应该理解，在不脱离本发明实质、范围的前提下可以有形式和细节上的各种改变。因此，所公开的本发明仅是例证性的，本发明的范围由所附的权利要求限定。

Claims (19)

1．一种磁记录介质，包括：
一个基底；
位于基底上的磁性记录层，包括一个第一铁磁膜、位于第一铁磁膜上的非铁磁隔离膜和一个位于隔离物膜上的第二铁磁膜，第二铁磁膜经隔离膜反铁磁交换耦合到第一铁磁膜。
2．如权利要求1的介质，还包括一个处于第二铁磁膜上的第二非铁磁隔离膜和一个处于第二隔离膜上的第三铁磁膜，第三铁磁膜经第二隔离膜反铁磁交换耦合到第一铁磁膜。
3．如权利要求1的介质，其特征在于第一铁磁膜的厚度为t1，磁化强度为M1，第二铁磁膜的厚度为t2，磁化强度为M2，其中第一和第二铁磁膜单位面积的磁矩(M1×t1)和(M2×t2)彼此不同。
4．如权利要求3的介质，其特征在于第一和第二铁磁膜由同样的材料构成，其中t1不同于t2。
5．如权利要求3的介质，其特征在于第一和第二铁磁膜由不同的材料构成，其中t1基本上与t2相同。
6．如权利要求1的介质，其特征在于隔离膜由选自钌(Ru)、铬(Cr)、铑(Rh)、铱(lr)、铜(Cu)及其合金的材料构成。
7．如权利要求1的介质，其特征在于第一和第二铁磁膜由选自Co，Fe，Ni及其合金的材料制成。
8．如权利要求1的介质，其特征在于第一铁磁膜包括一个界面膜，该界面膜由位于第一铁磁膜和隔离膜的界面处的钴组成。
9．如权利要求1的介质，其特征在于第二铁磁膜包括一个界面膜，该界面膜由位于第二铁磁膜和隔离膜的界面处的钴组成。
10．如权利要求1的介质，还包括一个位于基底和磁性记录层之间的基底上的垫层。
11．如权利要求1的介质，还包括一个形成于磁性记录层上的保护涂层。
12．一种磁性记录盘，包括：
一个基底；
一个基底上的垫层；
一个位于垫层上的磁性记录层，包括一个第一钴合金铁磁膜；形成在第一铁磁膜上并与其接触的、选自钌(Ru)、铬(Cr)、铑(Rh)、铱(lr)、铜(Cu)及其合金的材料的非铁磁隔离膜；和形成在隔离膜上并与其接触的第二钴合金铁磁膜；隔离膜的厚度足以诱使第二铁磁膜经隔离膜反铁磁交换耦合到第一铁磁膜；
以及一个保护涂层形成在磁性记录层上。
13．如权利要求12的盘，其特征在于第一铁磁膜是一个具有多个磁畴的粒状膜，每个磁畴包含多个磁粒，其中第二铁磁膜是一个具有多个磁畴的粒状膜，每个磁畴保护多个磁粒，其中第二铁磁膜中磁畴的磁矩通过隔离膜直接反平行反铁磁耦合到第一铁磁膜中相关的磁畴的磁矩。
14．如权利要求12的盘，还包括形成在第二铁磁膜上并与其接触的第二非铁磁隔离膜和形成在第二隔离膜上并与其接触的第三铁磁膜，第二隔离膜的厚度足以诱使第三铁磁膜经第二隔离膜反铁磁交换耦合到第一铁磁膜。
15．如权利要求12的盘，其特征在于第一铁磁膜的厚度为t1，磁化强度为M1，第二铁磁膜的厚度为t2，磁化强度为M2，其中第一和第二铁磁膜单位面积的磁矩(M1×t1)和(M2×t2)彼此不同。
16．如权利要求15的介质，其特征在于第一和第二铁磁膜由同样的材料构成，其中t1不同于t2。
17．如权利要求15的介质，其特征在于第一和第二铁磁膜由不同的材料构成，其中t1基本上与t2相同。
18．如权利要求15的介质，其特征在于第一铁磁膜包括一个界面膜，该界面膜由位于第一铁磁膜和隔离膜的界面处的钴组成。
19．如权利要求15的介质，其特征在于第二铁磁膜包括一个界面膜，该界面膜由位于第二铁磁膜和隔离膜的界面处的钴组成。
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