TW445537B - Method and apparatus for polishing substrate - Google Patents

Method and apparatus for polishing substrate Download PDF

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Publication number
TW445537B
TW445537B TW088119185A TW88119185A TW445537B TW 445537 B TW445537 B TW 445537B TW 088119185 A TW088119185 A TW 088119185A TW 88119185 A TW88119185 A TW 88119185A TW 445537 B TW445537 B TW 445537B
Authority
TW
Taiwan
Prior art keywords
grinding
cleaning
substrate
polishing
unit
Prior art date
Application number
TW088119185A
Other languages
English (en)
Chinese (zh)
Inventor
Hiroshi Sotozaki
Koji Ato
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Application granted granted Critical
Publication of TW445537B publication Critical patent/TW445537B/zh

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B24B37/345—Feeding, loading or unloading work specially adapted to lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B51/00—Arrangements for automatic control of a series of individual steps in grinding a workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0412—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0472—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW088119185A 1998-11-06 1999-11-04 Method and apparatus for polishing substrate TW445537B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP31652298 1998-11-06
JP13870599 1999-05-19
JP23677699A JP3979750B2 (ja) 1998-11-06 1999-08-24 基板の研磨装置

Publications (1)

Publication Number Publication Date
TW445537B true TW445537B (en) 2001-07-11

Family

ID=27317724

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088119185A TW445537B (en) 1998-11-06 1999-11-04 Method and apparatus for polishing substrate

Country Status (6)

Country Link
US (3) US6494985B1 (https=)
EP (2) EP0999012B1 (https=)
JP (1) JP3979750B2 (https=)
KR (1) KR100632412B1 (https=)
DE (1) DE69927111T2 (https=)
TW (1) TW445537B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI465316B (zh) * 2011-05-12 2014-12-21 南亞科技股份有限公司 化學機械研磨系統
CN107717713A (zh) * 2016-08-12 2018-02-23 三星显示有限公司 基底抛光系统及基底抛光方法
TWI868356B (zh) * 2020-04-29 2025-01-01 美商應用材料股份有限公司 表面加工方法

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3979750B2 (ja) * 1998-11-06 2007-09-19 株式会社荏原製作所 基板の研磨装置
US6526995B1 (en) 1999-06-29 2003-03-04 Intersil Americas Inc. Brushless multipass silicon wafer cleaning process for post chemical mechanical polishing using immersion
JP4484339B2 (ja) 1999-08-14 2010-06-16 アプライド マテリアルズ インコーポレイテッド スクラバにおける背面エッチング
JP2001326201A (ja) * 2000-05-16 2001-11-22 Ebara Corp ポリッシング装置
US20020023715A1 (en) * 2000-05-26 2002-02-28 Norio Kimura Substrate polishing apparatus and substrate polishing mehod
US6953392B2 (en) * 2001-01-05 2005-10-11 Asm Nutool, Inc. Integrated system for processing semiconductor wafers
US7172497B2 (en) 2001-01-05 2007-02-06 Asm Nutool, Inc. Fabrication of semiconductor interconnect structures
US20040259348A1 (en) * 2001-02-27 2004-12-23 Basol Bulent M. Method of reducing post-CMP defectivity
TWI222154B (en) * 2001-02-27 2004-10-11 Asm Nutool Inc Integrated system for processing semiconductor wafers
US7204743B2 (en) * 2001-02-27 2007-04-17 Novellus Systems, Inc. Integrated circuit interconnect fabrication systems
JP2003021818A (ja) * 2001-07-05 2003-01-24 Toshiba Corp 平面表示素子の製造方法
US20030022498A1 (en) * 2001-07-27 2003-01-30 Jeong In Kwon CMP system and method for efficiently processing semiconductor wafers
CN1329972C (zh) * 2001-08-13 2007-08-01 株式会社荏原制作所 半导体器件及其制造方法
US6638145B2 (en) * 2001-08-31 2003-10-28 Koninklijke Philips Electronics N.V. Constant pH polish and scrub
JP2003077871A (ja) * 2001-09-04 2003-03-14 Komatsu Machinery Corp 半導体ウエハの平面研削システム及びその加工方法
JP4101609B2 (ja) * 2001-12-07 2008-06-18 大日本スクリーン製造株式会社 基板処理方法
US6863595B1 (en) * 2001-12-19 2005-03-08 Cypress Semiconductor Corp. Methods for polishing a semiconductor topography
US7077916B2 (en) * 2002-03-11 2006-07-18 Matsushita Electric Industrial Co., Ltd. Substrate cleaning method and cleaning apparatus
JP2003318151A (ja) * 2002-04-19 2003-11-07 Nec Electronics Corp 半導体装置の製造方法
DE10229000A1 (de) * 2002-06-28 2004-01-29 Advanced Micro Devices, Inc., Sunnyvale Vorrichtung und Verfahren zum Reduzieren der Oxidation von polierten Metalloberflächen in einem chemisch-mechanischen Poliervorgang
KR100487562B1 (ko) * 2003-03-24 2005-05-03 삼성전자주식회사 웨이퍼 휘어짐을 억제할 수 있는 반도체 제조방법
JP4698144B2 (ja) 2003-07-31 2011-06-08 富士通セミコンダクター株式会社 半導体装置の製造方法
US20050106359A1 (en) * 2003-11-13 2005-05-19 Honeywell International Inc. Method of processing substrate
US20060077817A1 (en) * 2004-09-13 2006-04-13 Seo Kang S Method and apparatus for reproducing data from recording medium using local storage
US7993485B2 (en) * 2005-12-09 2011-08-09 Applied Materials, Inc. Methods and apparatus for processing a substrate
US20070131653A1 (en) * 2005-12-09 2007-06-14 Ettinger Gary C Methods and apparatus for processing a substrate
KR100744222B1 (ko) * 2005-12-27 2007-07-30 동부일렉트로닉스 주식회사 화학적 기계적 연마 시스템
JP5204960B2 (ja) * 2006-08-24 2013-06-05 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
US8205625B2 (en) * 2006-11-28 2012-06-26 Ebara Corporation Apparatus and method for surface treatment of substrate, and substrate processing apparatus and method
JP5258082B2 (ja) * 2007-07-12 2013-08-07 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US7670438B2 (en) * 2007-10-03 2010-03-02 United Microelectronics Corp. Method of removing particles from wafer
CN101419903B (zh) * 2007-10-24 2010-06-23 联华电子股份有限公司 移除晶片上的颗粒的方法
JP5306644B2 (ja) * 2007-12-29 2013-10-02 Ｈｏｙａ株式会社 マスクブランク用基板の製造方法、多層反射膜付き基板の製造方法、及び反射型マスクブランクの製造方法、並びに反射型マスクの製造方法
KR101958874B1 (ko) 2008-06-04 2019-03-15 가부시키가이샤 에바라 세이사꾸쇼 기판처리장치, 기판처리방법, 기판 파지기구, 및 기판 파지방법
WO2010044325A1 (ja) * 2008-10-17 2010-04-22 コニカミノルタオプト株式会社 ガラス基板の製造方法、および磁気記録媒体の製造方法
US8739806B2 (en) 2011-05-11 2014-06-03 Nanya Technology Corp. Chemical mechanical polishing system
US20120289131A1 (en) * 2011-05-13 2012-11-15 Li-Chung Liu Cmp apparatus and method
US20130061876A1 (en) * 2011-09-14 2013-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor Device Surface Clean
JP7368137B2 (ja) * 2019-08-06 2023-10-24 株式会社ディスコ ウェーハの加工方法
JP7813143B2 (ja) * 2022-01-21 2026-02-12 株式会社荏原製作所 基板洗浄方法および基板洗浄装置
JP2025162266A (ja) * 2024-04-15 2025-10-27 株式会社荏原製作所 研磨方法および研磨システム

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3923567A (en) * 1974-08-09 1975-12-02 Silicon Materials Inc Method of reclaiming a semiconductor wafer
US4141180A (en) * 1977-09-21 1979-02-27 Kayex Corporation Polishing apparatus
US6989228B2 (en) * 1989-02-27 2006-01-24 Hitachi, Ltd Method and apparatus for processing samples
US5429070A (en) * 1989-06-13 1995-07-04 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5827110A (en) * 1994-12-28 1998-10-27 Kabushiki Kaisha Toshiba Polishing facility
KR100390293B1 (ko) * 1993-09-21 2003-09-02 가부시끼가이샤 도시바 폴리싱장치
JP3326642B2 (ja) * 1993-11-09 2002-09-24 ソニー株式会社 基板の研磨後処理方法およびこれに用いる研磨装置
JP3644706B2 (ja) * 1994-11-29 2005-05-11 東芝機械株式会社 ポリッシング装置
US5655954A (en) * 1994-11-29 1997-08-12 Toshiba Kikai Kabushiki Kaisha Polishing apparatus
US5996594A (en) * 1994-11-30 1999-12-07 Texas Instruments Incorporated Post-chemical mechanical planarization clean-up process using post-polish scrubbing
US6132564A (en) * 1997-11-17 2000-10-17 Tokyo Electron Limited In-situ pre-metallization clean and metallization of semiconductor wafers
JP2850803B2 (ja) * 1995-08-01 1999-01-27 信越半導体株式会社 ウエーハ研磨方法
US5830045A (en) * 1995-08-21 1998-11-03 Ebara Corporation Polishing apparatus
US5738574A (en) * 1995-10-27 1998-04-14 Applied Materials, Inc. Continuous processing system for chemical mechanical polishing
US6050884A (en) * 1996-02-28 2000-04-18 Ebara Corporation Polishing apparatus
EP0807492B1 (en) * 1996-05-16 2003-03-19 Ebara Corporation Method for polishing workpieces and apparatus therefor
KR100496916B1 (ko) * 1996-05-16 2005-09-30 가부시키가이샤 에바라 세이사꾸쇼 피가공물의 폴리싱 방법 및 장치
JP3679871B2 (ja) * 1996-09-04 2005-08-03 株式会社荏原製作所 ポリッシング装置及び搬送ロボット
US5928389A (en) * 1996-10-21 1999-07-27 Applied Materials, Inc. Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool
JPH10125641A (ja) 1996-10-23 1998-05-15 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
EP1325793B1 (en) * 1996-11-14 2010-01-13 Ebara Corporation Drainage structure in polishing plant
US5725414A (en) * 1996-12-30 1998-03-10 Intel Corporation Apparatus for cleaning the side-edge and top-edge of a semiconductor wafer
JP3641349B2 (ja) * 1997-05-19 2005-04-20 株式会社荏原製作所 洗浄装置
US6036582A (en) * 1997-06-06 2000-03-14 Ebara Corporation Polishing apparatus
DE69825143T2 (de) * 1997-11-21 2005-08-11 Ebara Corp. Vorrichtung zum polieren
US6270582B1 (en) * 1997-12-15 2001-08-07 Applied Materials, Inc Single wafer load lock chamber for pre-processing and post-processing wafers in a vacuum processing system
US5954888A (en) * 1998-02-09 1999-09-21 Speedfam Corporation Post-CMP wet-HF cleaning station
JP3979750B2 (ja) * 1998-11-06 2007-09-19 株式会社荏原製作所 基板の研磨装置
US6227950B1 (en) * 1999-03-08 2001-05-08 Speedfam-Ipec Corporation Dual purpose handoff station for workpiece polishing machine
JP4288767B2 (ja) * 1999-07-07 2009-07-01 東京エレクトロン株式会社 半導体装置の製造方法
US6332926B1 (en) * 1999-08-11 2001-12-25 General Electric Company Apparatus and method for selectively coating internal and external surfaces of an airfoil

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI465316B (zh) * 2011-05-12 2014-12-21 南亞科技股份有限公司 化學機械研磨系統
CN107717713A (zh) * 2016-08-12 2018-02-23 三星显示有限公司 基底抛光系统及基底抛光方法
CN107717713B (zh) * 2016-08-12 2021-11-30 三星显示有限公司 基底抛光系统及基底抛光方法
TWI868356B (zh) * 2020-04-29 2025-01-01 美商應用材料股份有限公司 表面加工方法

Also Published As

Publication number Publication date
KR100632412B1 (ko) 2006-10-09
US20030051812A1 (en) 2003-03-20
KR20000035257A (ko) 2000-06-26
EP0999012A2 (en) 2000-05-10
JP3979750B2 (ja) 2007-09-19
DE69927111D1 (de) 2005-10-13
DE69927111T2 (de) 2006-06-29
EP1600258A1 (en) 2005-11-30
US6494985B1 (en) 2002-12-17
JP2001035821A (ja) 2001-02-09
US20040155013A1 (en) 2004-08-12
EP0999012A3 (en) 2003-01-29
EP0999012B1 (en) 2005-09-07

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