TW419398B - On line cleaning method after polishing - Google Patents

Abstract

This invention is about a kind of online cleaning method for the work piece after polishing. In this method, the pressure of chemical mechanical polishing (CMP) reaction mechanism is adjusted to match with different contact material of work piece. And the removal of surface particles is performed by the operation of CMP mechanism slightly to reach the process removing target as obtained by the clean mechanism of rolling-brush removing, such as the surface layer of work piece, the trivial crumbs and abrasive particles, that the clean surface of worked subject with even better quality is obtained. The clean process is performed directly by the polishing mechanism, in which the chemical mechanical polishing method and the brushing clean method are combined and performed on the same machine, so as to save space, time and prevent the contamination of worked subject.

Description

V. Description of the invention (1) 1 ~ [Background of the invention] [Field of the invention] The present invention relates to the cleaning process of the workpiece after polishing. In detail, it is to perform chemical chemical polishing of the workpiece and surface particles on the same machine at the same time. Cleaning method after cleaning and polishing online. [Related technical description] At present, there are two major types of patents for workpiece polishing in the United States. One is to adjust the pressure of the chemical polishing reaction mechanism of the machine to change the processing rate. The other is to adjust the chemical composition to maintain the state of the polishing pad. Special emphasis is placed on the technologies related to chemical polishing and post-polishing cleaning (workpiece surface). The cleaning process after calendering the workpiece, cleaning the surface particles by brushing is a widely accepted process. The conventional chemical polishing (CMP) planarization process has a device as shown in the top view of FIG. 4A and the side view of FIG. 4B. 'A polishing table 4 is used for wafer polishing, and It consists of the handle 2 of the wafer 1 to be polished, which makes the handle 2 grasp the back of the wafer 1, and then press the front side of the wafer 1 on the polishing table 4 covered with a polishing pad 5, and then perform the machine Chemical polishing; during grinding, chemical additives (also known as Siurry) 3 used to assist the mechanical chemical polishing are continuously supplied to the grinding table 4 by an extended pipe. FIG. 5 is a schematic diagram showing the surface grinding effect of the conventional chemical chemical polishing and planarization process of FIG. 4. Grinding 塾 5 on the grinding table 4 (which is opposite to the direction shown in FIG. 4) is opposite to the workpiece. (Wafer) 1 is filled with chemical additives (pulp) 3, and the frontal pressure 8 presses the abrasive particles (such as SiO2, Si02) to rotate at a speed of 9 to grind off the paper size on wafer 1. Applicable to China National Standard (CNS) A4 specification (2 丨 OX297 mm) 13908 Γ! ΊίίΛ) I (Please read the note on the back before filling out this page) Printed by the Ministry of Economic Affairs and Economic Cooperation Bureau of Jihui, China 419398 A7 ---- B7 Economics. Printed by the Ministry of Economic Affairs Intellectual Property X Consumer Cooperatives V. Description of Invention (2) Uneven silicon (Si) part. As for the mechanism for cleaning the surface particles of the workpiece, as shown in Fig. 6, they are usually made of special expensive materials such as poly vinyl alcohol (pva) and nylon (Nyi〇n). Brush roller 6, equipped with special cleaning liquid 7, suitable chemical reaction * Brushing polished workpiece (wafer Η surface particles β Figure 7 shows the surface brushing effect of the conventional roller brush cleaning process Schematic diagram. The wafer 1 is filled with the cleaning liquid 7, the front pressure 8 presses the bristles 6 on the roller 6, and moves in the speed direction 9, and the particles (abrasive particles) 10 on the surface of the polished wafer 1 are brushed. The conventional cleaning process flow chart is shown in Figure 9. In step S1, mechanical chemical polishing is performed. A polishing cloth (for fine polishing) that does not easily cause damage to the surface of the workpiece is selected to remove particles on the surface of the workpiece and complete the mechanical chemical polishing. After the fine throwing operation, the standard cleaning process (SC1) (NH4OH. H202. H20 = 1: 4: 1〇〇) wet cleaning is performed in step S2 ′, and then the process proceeds to step S3 ′ to move the workpiece to In another cleaning machine, add a suitable one in step S4f. The cleaning liquid 'cleans the roller brush-type cleaning mechanism in step S5' and finally finishes cleaning the workpiece in step S6. However, the conventional process of cleaning the surface particles by brushing is not only expensive because of the roller brush material, The cleaning process of another machine is a waste of space and time, and pollution is easy to occur during the conveying process of polished workpieces, which are all disadvantages. We are familiar with the mechanical chemical polishing machining mechanism and roller brush cleaning. The technical characteristics of the organization are compared in Table (1). 2 15908 τ: ΛΤ (Please read the precautions on the back before filling this page) Order line 41939S λ? ____B7 V. Description of the invention (3) Table (1) Roller brushing Cleaning mechanism machine chemical polishing machine processing mechanism removal mechanism chemical reaction and mechanical removal (Figure 6) chemical reaction and mechanical removal (Figure 4) processing force 0.14 ~ 0,28 kg / cm2 (2 ~ 4psi) 0.075-0.lkg / cm2 The machine is in contact with the workpiece material: PVA or nylon roller brush polishing cloth, adding chemical liquid or liquid surface active agent grinding paddle (Slurry, abrasive particles, etching solution, dispersion liquid, etc.) Surface layer, debris, and abrasive particle workpiece surface layer that can be ignored for processing removal I — -Ί --.---- ΛΤ (Please read the precautions on the back before filling this page) Fine review form (1) The comparison between the roller brush cleaning mechanism and the mechanical chemical polishing machine processing mechanism shows that except for the machine contact with the workpiece material, the added chemical liquid and the processing force, the mechanical removal mechanism is almost the same in other aspects. Therefore, the pressure of the chemical polishing reaction mechanism of the machine can be adjusted to cooperate with different contact workpiece materials to achieve processing and removal goals such as roller brush cleaning cleaning mechanism-negligible workpiece surface layer, debris, abrasive particles, and cleaning with the polishing mechanism ; That is, the combined chemical polishing and brush cleaning are performed on the same machine to save space, time and avoid workpiece contamination. [Summary of the Invention] The object of the present invention is to provide a combination of machine chemical polishing and brush cleaning on the same machine and can achieve the removal target such as the roller brush cleaning mechanism, and even better workpieces with good surface quality. Method for on-line cleaning after polishing 13 Another object of the present invention is to provide a mechanical and chemical polishing mechanism instead of a roller brush-type cleaning mechanism for workpiece cleaning after polishing. The paper size is applicable to Chinese National Standard (CNS) M specifications (210X297). (Mm) 15908 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 3 419398 A7 B7 V. Invention Description (4) Law. Yet another object of the present invention is to provide a method for cleaning a workpiece after polishing, which saves space, time, and avoids sweating of the workpiece. The method for on-line cleaning of a workpiece after polishing according to the present invention includes the following steps: removing the particles on the surface of the workpiece by mechanical chemical polishing, and completing the fine polishing movement of the chemical polishing of the machine; Smooth, reduce its friction coefficient, and clean the surface of the diluted workpiece; change the load pressure to an appropriate level to avoid mechanical force to damage the surface of the workpiece; use a slight mechanical chemical polishing mechanism to remove surface particles, and remove the effect by removing the light cloth , So that the original processing mechanism for removing the surface layer of the workpiece is converted to remove the debris or abrasive particles on the surface of the workpiece; wet cleaning by standard cleaning treatment (SCI); and complete cleaning of the workpiece β The first concept of the present invention is Machine chemical polishing removes particles on the surface of the workpiece 'After the chemical polishing of Yuancheng machine's fine polishing action', the workpiece is cleaned directly on the same machine. The mechanical chemical polishing mechanism is used instead of the roller brush cleaning mechanism. Transfer the workpiece to another cleaning machine to achieve the processing and removal target such as roller brush cleaning type Negligible workpiece surface layer, debris, and abrasive particles, which can save the cost of a machine, save space, save time, and avoid possible pollution caused by moving the workpiece. The second concept of the present invention is Mechanical chemical polishing to remove particles on the surface of the workpiece 'After finishing the chemical polishing of the machine, the workpiece is cleaned directly on the same polishing machine, and the mechanical chemical polishing mechanism is used to replace the rollers ^ 屌 _J < > green washing It is expected that the abrasive particles and chopped (Si) particles will be taken out of the crystal II .—— Γ ---- ο, (Please read the note on the back before filling in this page) Order the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed. Line ΛJ ------------------

4 15908 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5 419398 A7 ____ B7__ V. Description of the invention (5) '~ Round surfaces, which results in better quality workpiece cleaning surfaces. [Brief description of the drawings] The purpose and advantages of the present invention will become more apparent from the following detailed description of the accompanying drawings. The same reference numbers in the drawings indicate corresponding parts, of which: 1 FIG. 2 is a process flow chart of the on-line cleaning method after polishing according to the present invention. FIG. 2 is a schematic diagram showing the surface cleaning effect of on-line cleaning after polishing by chemical chemical polishing and brush cleaning on the same machine according to the present invention. Figure 3 shows the distribution of particles on the wafer surface and its data after the cleaning is completed by the cleaning mechanism of the invention where the chemical chemical polishing and brush cleaning are performed on the same machine according to Figure 2; Figure 4A is A schematic top view showing a conventional mechanical chemical polishing flattening process mechanism is shown. FIG. 4B is a schematic side view showing a conventional mechanical chemical polishing and flattening process mechanism. FIG. 5 is a surface showing a conventional mechanical chemical polishing and flattening process. Schematic diagram of grinding and polishing action; Figure 6 is a schematic diagram showing the conventional roller brush cleaning type cleaning mechanism; Figure 7 is a table showing the conventional roller brush cleaning type cleaning process Schematic diagram of the erasing effect; 'Figure 8 shows the distribution of particles on the wafer surface and its data after the cleaning by the conventional roller brush cleaning mechanism shown in Figure 7; the scale is applicable to the Chinese National Standard (CNS) A4 specifications (210X297 mm) ^ -----

I590S (Please read the notes on the back before filling this page)

Handle Grinding Table Roller 7 'Cleaning Solution Speed Direction Silicon (Si) Particles Printed by Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 6 413398 A7 " " *--B7 V. Description of Invention (6) Figure 9 is the first The process flow chart of the roller brush type cleaning mechanism shown in FIG. 6. [Explanation of drawing number] 1 wafer 3 slurry 5 polishing pad 6 'bristles 8 front pressure 10 abrasive particles [detailed description of preferred embodiment] The present invention uses a mechanical and chemical polishing machine processing mechanism after processing while the workpiece is still processing On the machine, add a large amount of cleaning liquid, such as lye or surfactant, to increase the slip between the workpiece and the polishing cloth, reduce the coefficient of friction, and clean the surface of the diluted workpiece, while reducing the processing pressure to avoid mechanical forces damaging the surface of the workpiece With the polishing cloth brushing effect, the original addition to remove the surface layer of the workpiece: the mechanism is turned to remove the debris or abrasive particles on the surface of the workpiece, and the machine chemical removal and brush cleaning are on the same machine It is carried out to save the processing time and cost of the general light. The flowchart of the embodiment of the present invention is shown in FIG. Its step is S1. In the machine chemical polishing, select a polishing cloth (for fine polishing) that is not easy to cause damage to the surface of the workpiece to remove particles on the surface of the workpiece, complete the mechanical chemical polishing and fine polishing action, and then add the appropriate polishing machine to the same polishing machine in step S2. The cleaning fluid increases the slip between the workpiece and the polishing cloth, reduces its friction coefficient, and cleans the surface of the diluted workpiece; in step S3, the load pressure is changed to an appropriate level to avoid the mechanical paper size applicable to the Chinese National Standard (CNS) A4 specification ( 2I0X297 mm) 15908 (Please read the precautions on the back before filling in this page>

4193 9 8 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (7) The surface of the workpiece is destroyed by force; in step S4, the surface particles are removed by using a slight mechanical chemical polishing mechanism, that is, by brushing with a polishing cloth. Function, so that the processing mechanism that originally removed the surface layer of the workpiece is converted to remove debris or abrasive particles on the surface of the workpiece; performing standard cleaning treatment (SCI) wet cleaning 'in step S5 and finally cleaning the workpiece in step S6. The selection of cleaning fluid and how to adjust the operating pressure of the chemical polishing mechanism to avoid removal of the workpiece surface. The solution is based on the requirements of the workpiece after processing. As long as the cleaning solution is selected, the mechanical chemical polishing mechanism is operated. It can meet the requirements of the shape, cleanliness and other physical or chemical characteristics of the polished workpiece. Example description: First, the surface brushing effect of the conventional roller brush cleaning process, and the case of on-line cleaning of the surface after the chemical chemical polishing and the brush cleaning are polished on the same machine according to the present invention , For comparison and illustration. As shown in FIG. 7 above, it is a schematic diagram showing the surface brushing effect of the conventional roller brush cleaning process. The wafer 丨 is filled with the cleaning liquid 7, and the front dust force 8 presses the bristles 6 on the roller 6 to move in the speed direction $, and brushes the particles on the surface of the polished wafer 1 (abrasive particles Η〇 etc.). Shows the distribution of particles on the wafer surface and its data after the cleaning of the conventional roller brush-type cleaning mechanism shown in FIG. 7 is performed. The implementation conditions are set as follows: Workpiece: 200mm bare stone wafer cleaning solution: standard Cleaning treatment (SC1) — Ii ---- OI (Please read the precautions on the back before filling this page) Order

Line S

\ Ding I see M 7 15908 4t9398 A7 B7 Wisdom of the Ministry of Economic Affairs. Printed by the Consumer Cooperative of the Property Bureau. 5. Description of the invention (8) Cleaning force: 2 ~ 4psi. The second picture shows the chemical polishing and brushing of the machine according to the present invention. Schematic diagram of the effect of on-line cleaning of the surface cleaning after polishing on the same machine. The polishing pad 5 on the polishing table 4 is filled with the cleaning solution 7 between the wafer 1 and the front surface pressure 8 to drive the polishing particles 10 and the silicon (Si) micro-rough 11 to move in the speed direction 9 to move the polishing particles 1. And silicon (Si) particles 11 are brought out of the surface of the wafer 1. Fig. 3 is a graph showing the distribution of particles on the wafer surface and the data thereof after the cleaning is performed by a cleaning mechanism in which the chemical polishing and brush cleaning are performed on the same machine according to the example of the present invention shown in Fig. 2; The implementation conditions of this example are set as follows: Workpiece: 200mm bare silicon wafer polishing solution (pulp): Rodel Advansil 2000 Add cleaning solution: 100mL NH4OH / 15L H20 Polishing force: ΠΟΝ Cleaning force: 50N Polishing machine: Peter Wo Iters AC1400 (planetary) double-side polishing machine (also used in single-side polishing machine) From the comparison of the results in Figure 8 and Figure 3, it can be seen in Figure 8 that the conventional roller brush-type cleaning mechanism is used for cleaning. After that, the number of particles remaining on the surface of the wafer was greater than 0.112jum, and there were 1559 particles; and FIG. 3 t was cleaned by the cleaning mechanism on the same machine using the chemical polishing and brush cleaning of the present invention. After cleaning, the number of particles remaining on the surface of the wafer was more than 0.12 μm, and there were only 482 particles, which were far less than 1559 particles. Therefore, you can < Please read the notes on the back before filling this page) Finishing and Binding • — ^ 1- 1— This paper size applies to Chinese national standards (CNS > Α4 size (210X297 mm)

S 15908 4t9396 Α7 ------ Β7 V. Description of the invention (9) f. Please read the precautionary notes on the kidney surface before writing this page) Prove that the machine's chemical polishing and brush cleaning are in the same machine. The β-cleaning method performed on the stage, the quality of the wafer surface after cleaning is better than that of a conventional person who uses another machine to clean with a roller brush, and the quality is better; the method of the present invention is more advantageous for the removal of small particles. In addition, as mentioned earlier, using the method of the present month can save a washing machine and thus save money and space; it is not necessary to move the workpiece to another machine, so it saves time; and it avoids contamination of the workpiece. In addition to using ordinary polishing cloths, the present invention can also change the shape of the polishing cloths or use other materials, such as PVA, as polishing and cleaning cloths. Different cleaning liquids can achieve different cleaning effects. Therefore, the present invention is not limited to using only lye or surfactant. Other acids, oxidants, and organic solutions may be used as the cleaning liquid, as long as it can be used with the selected polishing cloth. It is used to achieve both organic chemical polishing and surface particle cleaning on a single machine. The most popular application for chemical polishing of a machine is silicon wafer polishing. However, the present invention can be applied to silicon wafers in addition to , Other substrates such as glass, ceramics, etc. can be applied to the same machine for chemical polishing and brush cleaning. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Although the present invention has been described by way of examples, it should be understood that various changes or modifications can be made without departing from the broad spirit and viewpoints defined in the scope of the patents attached to the present invention. , Should all belong to the scope of the present invention. This paper size is applicable to Ningguo National Standard (CNS) A4 specification (210 × 297 public epidemic disease 15908

Claims (1)

A8B8C8D8 419398 6. Scope of Patent Application 1. A method for on-line cleaning of workpieces after polishing, including the following steps: (Please read the precautions on the back before filling this page) Chemical polishing on the machine has removed particles from the surface of the workpiece, and finished the chemical polishing of the machine. Throwing action; add cleaning liquid on the same polishing machine; change the load pressure to appropriate to avoid mechanical force to damage the surface of the workpiece; use a slight mechanical chemical polishing mechanism to remove the surface particles, and use the polishing cloth to brush to make the original The processing mechanism that removes the surface layer of the workpiece is converted to remove debris or abrasive particles from the surface of the workpiece; wet cleaning is performed, and the workpiece is cleaned. 2'The method for on-line cleaning of workpieces after polishing according to item 丨 of the patent application, wherein the step of adding a cleaning solution to the same polishing machine includes adding an appropriate cleaning solution to increase bone moistening, cleaning and dilution between the workpiece and the polishing cloth. Steps on the surface of the machined part. •; Printed clothing by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 3. If the workpiece is cleaned online after polishing the item under the scope of the patent application, the step of adding a cleaning solution on the same polishing machine is adding an alkaline solution or a surfactant. 4. The method for on-line cleaning of workpieces after polishing, as described in the first patent application, wherein the step of adding a cleaning solution to the same polishing machine is to add an acid solution, an oxidant or an organic solution. 5. The method for on-line cleaning of a workpiece after polishing according to item 1 of the patent application scope, wherein the polishing cloth is a polishing and cleaning dual-purpose cloth made of polyvinyl alcohol (Polyvinyl alcohol, PVA). This paper size is applicable to the national standard (CNS) A4 specification (210 X 297 mm) 10 15908 419398 I. Scope of patent application 6. For the method of on-line cleaning of the workpiece after polishing in the first scope of the patent application, where the workpiece is Wafer, glass or ceramic. 7. For the method of on-line cleaning of workpieces after polishing, such as in the scope of the patent application, the wet cleaning step is a standard cleaning process (SCI). ○ (Please read the back of the page; i-notes before filling out this page) Economy Printed by the Consumers' Cooperative of the Ministry of Intellectual Property Bureau, the paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 11 15908